System and methods for extraction of threshold and mobility parameters in AMOLED displays

Information

  • Patent Grant
  • 10127846
  • Patent Number
    10,127,846
  • Date Filed
    Tuesday, September 19, 2017
    6 years ago
  • Date Issued
    Tuesday, November 13, 2018
    5 years ago
Abstract
A system to improve the extraction of transistor and OLED parameters in an AMOLED display includes a pixel circuit having an organic light emitting device, a drive device to provide a programmable drive current to the light emitting device, a programming input to provide the programming signal, and a storage device to store the programming signal. A charge-pump amplifier has a current input and a voltage output. The charge-pump amplifier includes an operational amplifier in negative feedback configuration. The feedback is provided by a capacitor connected between the output and the inverting input of the operational amplifier. A common-mode voltage source drives the non-inverting input of the operational amplifier. An electronic switch is coupled across the capacitor to reset the capacitor. A switch module including the input is coupled to the output of the pixel circuit and an output is coupled to the input of the charge-pump amplifier.
Description
COPYRIGHT

A portion of the disclosure of this patent document contains material which is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of the patent disclosure, as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all copyright rights whatsoever.


FIELD OF THE INVENTION

The present invention generally relates to active matrix organic light emitting device (AMOLED) displays, and particularly extracting threshold and mobility factors from the pixel drivers for such displays.


BACKGROUND

Currently, active matrix organic light emitting device (“AMOLED”) displays are being introduced. The advantages of such displays include lower power consumption, manufacturing flexibility and faster refresh rate over conventional liquid crystal displays. In contrast to conventional liquid crystal displays, there is no backlighting in an AMOLED display, and thus each pixel consists of different colored OLEDs emitting light independently. The OLEDs emit light based on current supplied through a drive transistor controlled by a programming voltage. The power consumed in each pixel has a relation with the magnitude of the generated light in that pixel.


The quality of output in an OLED based pixel is affected by the properties of the drive transistor, which is typically fabricated from materials including but not limited to amorphous silicon, polysilicon, or metal oxide, as well as the OLED itself. In particular, threshold voltage and mobility of the drive transistor tend to change as the pixel ages. In order to maintain image quality, changes in these parameters must be compensated for by adjusting the programming voltage. In order to do so, such parameters must be extracted from the driver circuit. The addition of components to extract such parameters in a simple driver circuit requires more space on a display substrate for the drive circuitry and thereby reduces the amount of aperture or area of light emission from the OLED.


When biased in saturation, the I-V characteristic of a thin film drive transistor depends on mobility and threshold voltage which are a function of the materials used to fabricate the transistor. Thus different thin film transistor devices implemented across the display panel may demonstrate non-uniform behavior due to aging and process variations in mobility and threshold voltage. Accordingly, for a constant voltage, each device may have a different drain current. An extreme example may be where one device could have low threshold-voltage and low mobility compared to a second device with high threshold-voltage and high mobility.


Thus with very few electronic components available to maintain a desired aperture, extraction of non-uniformity parameters (i.e. threshold voltage, Vth, and mobility, μ) of the drive TFT and the OLED becomes challenging. It would be desirable to extract such parameters in a driver circuit for an OLED pixel with as few components as possible to maximize pixel aperture.


SUMMARY

One example disclosed is an organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including an organic light emitting device (OLED), a drive device to provide a programmable drive current to the light emitting device, a programming input to provide a programming signal, a storage device to store the programming signal; and a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective drive device. A controller is coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage from each pixel.


Another example disclosed is an organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including an organic light emitting device (OLED), a drive device to provide a programmable drive current to the light emitting device, a programming input to provide a programming signal, and a storage device to store the programming signal. A plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective OLED.


A controller is coupled to the pixel circuits, and the readout circuits, and the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage from each pixel.


The foregoing and additional aspects and embodiments of the present invention will be apparent to those of ordinary skill in the art in view of the detailed description of various embodiments and/or aspects, which is made with reference to the drawings, a brief description of which is provided next.





BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages of the invention will become apparent upon reading the following detailed description and upon reference to the drawings.



FIG. 1 is a block diagram of an AMOLED display with compensation control;



FIG. 2 is a circuit diagram of a data extraction circuit for a two-transistor pixel in the AMOLED display in FIG. 1;



FIG. 3A is a signal timing diagram of the signals to the data extraction circuit to extract the threshold voltage and mobility of an n-type drive transistor in FIG. 2;



FIG. 3B is a signal timing diagram of the signals to the data extraction circuit to extract the characteristic voltage of the OLED in FIG. 2 with an n-type drive transistor;



FIG. 3C is a signal timing diagram of the signals to the data extraction circuit for a direct read to extract the threshold voltage of an n-type drive transistor in FIG. 2;



FIG. 4A is a signal timing diagram of the signals to the data extraction circuit to extract the threshold voltage and mobility of a p-type drive transistor in FIG. 2;



FIG. 4B is a signal timing diagram of the signals to the data extraction circuit to extract the characteristic voltage of the OLED in FIG. 2 with a p-type drive transistor;



FIG. 4C is a signal timing diagram of the signals to the data extraction circuit for a direct read to extract the threshold voltage of a p-type drive transistor in FIG. 2;



FIG. 4D is a signal timing diagram of the signals to the data extraction circuit for a direct read of the OLED turn-on voltage using either an n-type or p-type drive transistor in FIG. 2.



FIG. 5 is a circuit diagram of a data extraction circuit for a three-transistor drive circuit for a pixel in the AMOLED display in FIG. 1 for extraction of parameters;



FIG. 6A is a signal timing diagram of the signals to the data extraction circuit to extract the threshold voltage and mobility of the drive transistor in FIG. 5;



FIG. 6B is a signal timing diagram of the signals to the data extraction circuit to extract the characteristic voltage of the OLED in FIG. 5;



FIG. 6C is a signal timing diagram the signals to the data extraction circuit for a direct read to extract the threshold voltage of the drive transistor in FIG. 5;



FIG. 6D is a signal timing diagram of the signals to the data extraction circuit for a direct read to extract the characteristic voltage of the OLED in FIG. 5;



FIG. 7 is a flow diagram of the extraction cycle to readout the characteristics of the drive transistor and the OLED of a pixel circuit in an AMOLED display;



FIG. 8 is a flow diagram of different parameter extraction cycles and final applications; and



FIG. 9 is a block diagram and chart of the components of a data extraction system.





While the invention is susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed. Rather, the invention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.


DETAILED DESCRIPTION


FIG. 1 is an electronic display system 100 having an active matrix area or pixel array 102 in which an n×m array of pixels 104 are arranged in a row and column configuration. For ease of illustration, only two rows and two columns are shown. External to the active matrix area of the pixel array 102 is a peripheral area 106 where peripheral circuitry for driving and controlling the pixel array 102 are disposed. The peripheral circuitry includes an address or gate driver circuit 108, a data or source driver circuit 110, a controller 112, and an optional supply voltage (e.g., Vdd) driver 114. The controller 112 controls the gate, source, and supply voltage drivers 108, 110, 114. The gate driver 108, under control of the controller 112, operates on address or select lines SEL[i], SEL[i+1], and so forth, one for each row of pixels 104 in the pixel array 102. In pixel sharing configurations described below, the gate or address driver circuit 108 can also optionally operate on global select lines GSEL[j] and optionally /GSEL[j], which operate on multiple rows of pixels 104 in the pixel array 102, such as every two rows of pixels 104. The source driver circuit 110, under control of the controller 112, operates on voltage data lines Vdata[k], Vdata[k+1], and so forth, one for each column of pixels 104 in the pixel array 102. The voltage data lines carry voltage programming information to each pixel 104 indicative of the brightness of each light emitting device in the pixel 104. A storage element, such as a capacitor, in each pixel 104 stores the voltage programming information until an emission or driving cycle turns on the light emitting device. The optional supply voltage driver 114, under control of the controller 112, controls a supply voltage (EL_Vdd) line, one for each row or column of pixels 104 in the pixel array 102.


The display system 100 further includes a current supply and readout circuit 120, which reads output data from data output lines, VD [k], VD [k+1], and so forth, one for each column of pixels 104 in the pixel array 102.


As is known, each pixel 104 in the display system 100 needs to be programmed with information indicating the brightness of the light emitting device in the pixel 104. A frame defines the time period that includes: (i) a programming cycle or phase during which each and every pixel in the display system 100 is programmed with a programming voltage indicative of a brightness; and (ii) a driving or emission cycle or phase during which each light emitting device in each pixel is turned on to emit light at a brightness commensurate with the programming voltage stored in a storage element. A frame is thus one of many still images that compose a complete moving picture displayed on the display system 100. There are at least schemes for programming and driving the pixels: row-by-row, or frame-by-frame. In row-by-row programming, a row of pixels is programmed and then driven before the next row of pixels is programmed and driven. In frame-by-frame programming, all rows of pixels in the display system 100 are programmed first, and all rows of pixels are driven at once. Either scheme can employ a brief vertical blanking time at the beginning or end of each frame during which the pixels are neither programmed nor driven.


The components located outside of the pixel array 102 may be disposed in a peripheral area 106 around the pixel array 102 on the same physical substrate on which the pixel array 102 is disposed. These components include the gate driver 108, the source driver 110, the optional supply voltage driver 114, and a current supply and readout circuit 120. Alternately, some of the components in the peripheral area 106 may be disposed on the same substrate as the pixel array 102 while other components are disposed on a different substrate, or all of the components in the peripheral area can be disposed on a substrate different from the substrate on which the pixel array 102 is disposed. Together, the gate driver 108, the source driver 110, and the supply voltage driver 114 make up a display driver circuit. The display driver circuit in some configurations can include the gate driver 108 and the source driver 110 but not the supply voltage control 114.


When biased in saturation, the first order I-V characteristic of a metal oxide semiconductor (MOS) transistor (a thin film transistor in this case of interest) is modeled as:







I
D

=


1
2


μ






C
ox



W
L




(


V
GS

-

V
th


)

2







where ID is the drain current and VGS is the voltage difference applied between gate and source terminals of the transistor. The thin film transistor devices implemented across the display system 100 demonstrate non-uniform behavior due to aging and process variations in mobility (μ) and threshold voltage (Vth). Accordingly, for a constant voltage difference applied between gate and source, VGS, each transistor on the pixel matrix 102 may have a different drain current based on a non-deterministic mobility and threshold voltage:

ID(i,j)=fi,j,Vthi,j)

where i and j are the coordinates (row and column) of a pixel in an n×m array of pixels such as the array of pixels 102 in FIG. 1.



FIG. 2 shows a data extraction system 200 including a two-transistor (2 T) driver circuit 202 and a readout circuit 204. The supply voltage control 114 is optional in a display system with 2 T pixel circuit 104. The readout circuit 204 is part of the current supply and readout circuit 120 and gathers data from a column of pixels 104 as shown in FIG. 1. The readout circuit 204 includes a charge pump circuit 206 and a switch-box circuit 208. A voltage source 210 provides the supply voltage to the driver circuit 202 through the switch-box circuit 208. The charge-pump and switch-box circuits 206 and 208 are implemented on the top or bottom side of the array 102 such as in the voltage drive 114 and the current supply and readout circuit 120 in FIG. 1. This is achieved by either direct fabrication on the same substrate as the pixel array 102 or by bonding a microchip on the substrate or a flex as a hybrid solution.


The driver circuit 202 includes a drive transistor 220, an organic light emitting device 222, a drain storage capacitor 224, a source storage capacitor 226, and a select transistor 228. A supply line 212 provides the supply voltage and also a monitor path (for the readout circuit 204) to a column of driver circuits such as the driver circuit 202. A select line input 230 is coupled to the gate of the select transistor 228. A programming data input 232 is coupled to the gate of the drive transistor 220 through the select transistor 228. The drain of the drive transistor 220 is coupled to the supply voltage line 212 and the source of the drive transistor 220 is coupled to the OLED 222. The select transistor 228 controls the coupling of the programming input 230 to the gate of the drive transistor 220. The source storage capacitor 226 is coupled between the gate and the source of the drive transistor 220. The drain storage capacitor 224 is coupled between the gate and the drain of the drive transistor 220. The OLED 222 has a parasitic capacitance that is modeled as a capacitor 240. The supply voltage line 212 also has a parasitic capacitance that is modeled as a capacitor 242. The drive transistor 220 in this example is a thin film transistor that is fabricated from amorphous silicon. Of course other materials such as polysilicon or metal oxide may be used. A node 244 is the circuit node where the source of the drive transistor 220 and the anode of the OLED 222 are coupled together. In this example, the drive transistor 220 is an n-type transistor. The system 200 may be used with a p-type drive transistor in place of the n-type drive transistor 220 as will be explained below.


The readout circuit 204 includes the charge-pump circuit 206 and the switch-box circuit 208. The charge-pump circuit 206 includes an amplifier 250 having a positive and negative input. The negative input of the amplifier 250 is coupled to a capacitor 252 (Cint) in parallel with a switch 254 in a negative feedback loop to an output 256 of the amplifier 250. The switch 254 (S4) is utilized to discharge the capacitor 252 Cint during the pre-charge phase. The positive input of the amplifier 250 is coupled to a common mode voltage input 258 (VCM). The output 256 of the amplifier 250 is indicative of various extracted parameters of the drive transistor 220 and OLED 222 as will be explained below.


The switch-box circuit 208 includes several switches 260, 262 and 264 (S1, S2 and S3) to steer current to and from the pixel driver circuit 202. The switch 260 (S1) is used during the reset phase to provide a discharge path to ground. The switch 262 (S2) provides the supply connection during normal operation of the pixel 104 and also during the integration phase of readout. The switch 264 (S3) is used to isolate the charge-pump circuit 206 from the supply line voltage 212 (VD).


The general readout concept for the two transistor pixel driver circuit 202 for each of the pixels 104, as shown in FIG. 2, comes from the fact that the charge stored on the parasitic capacitance represented by the capacitor 240 across the OLED 222 has useful information of the threshold voltage and mobility of the drive transistor 220 and the turn-on voltage of the OLED 222. The extraction of such parameters may be used for various applications. For example, such parameters may be used to modify the programming data for the pixels 104 to compensate for pixel variations and maintain image quality. Such parameters may also be used to pre-age the pixel array 102. The parameters may also be used to evaluate the process yield for the fabrication of the pixel array 102.


Assuming that the capacitor 240 (COLED) is initially discharged, it takes some time for the capacitor 240 (COLED) to charge up to a voltage level that turns the drive transistor 220 off. This voltage level is a function of the threshold voltage of the drive transistor 220. The voltage applied to the programming data input 232 (VData) must be low enough such that the settled voltage of the OLED 222 (VOLED) is less than the turn-on threshold voltage of the OLED 222 itself. In this condition, VData−VOLED is a linear function of the threshold voltage (Vth) of the drive transistor 220. In order to extract the mobility of a thin film transistor device such as the drive transistor 220, the transient settling of such devices, which is a function of both the threshold voltage and mobility, is considered. Assuming that the threshold voltage deviation among the TFT devices such as the drive transistor 220 is compensated, the voltage of the node 244 sampled at a constant interval after the beginning of integration is a function of mobility only of the TFT device such as the drive transistor 220 of interest.



FIG. 3A-3C are signal timing diagrams of the control signals applied to the components in FIG. 2 to extract parameters such as voltage threshold and mobility from the drive transistor 220 and the turn on voltage of the OLED 222 in the drive circuit 200 assuming the drive transistor 220 is an n-type transistor. Such control signals could be applied by the controller 112 to the source driver 110, the gate driver 108 and the current supply and readout circuit 120 in FIG. 1. FIG. 3A is a timing diagram showing the signals applied to the extraction circuit 200 to extract the threshold voltage and mobility from the drive transistor 220. FIG. 3A includes a signal 302 for the select input 230 in FIG. 2, a signal 3041) to the switch 260, a signal 3062) for the switch 262, a signal 3083) for the switch 264, a signal 3104) for the switch 254, a programming voltage signal 312 for the programming data input 232 in FIG. 2, a voltage 314 of the node 244 in FIG. 2 and an output voltage signal 316 for the output 256 of the amplifier 250 in FIG. 2.



FIG. 3A shows the four phases of the readout process, a reset phase 320, an integration phase 322, a pre-charge phase 324 and a read phase 326. The process starts by activating a high select signal 302 to the select input 230. The select signal 302 will be kept high throughout the readout process as shown in FIG. 3A.


During the reset phase 320, the input signal 3041) to the switch 260 is set high in order to provide a discharge path to ground. The signals 306, 308 and 3102, ϕ3, ϕ4) to the switches 262, 264 and 250 are kept low in this phase. A high enough voltage level (VRST_TFT) is applied to the programming data input 232 (VData) to maximize the current flow through the drive transistor 220. Consequently, the voltage at the node 244 in FIG. 2 is discharged to ground to get ready for the next cycle.


During the integration phase 322, the signal 3042) to the switch 262 stays high which provides a charging path from the voltage source 210 through the switch 262. The signals 304, 308 and 3101, ϕ3, ϕ4) to the switches 260, 264 and 250 are kept low in this phase. The programming voltage input 232 (VData) is set to a voltage level (VINT_TFT) such that once the capacitor 240 (Coled) is fully charged, the voltage at the node 244 is less than the turn-on voltage of the OLED 222. This condition will minimize any interference from the OLED 222 during the reading of the drive transistor 220. Right before the end of integration time, the signal 312 to the programming voltage input 232 (VData) is lowered to VOFF in order to isolate the charge on the capacitor 240 (Coled) from the rest of the circuit.


When the integration time is long enough, the charge stored on capacitor 240 (Coled) will be a function of the threshold voltage of the drive transistor 220. For a shortened integration time, the voltage at the node 244 will experience an incomplete settling and the stored charge on the capacitor 240 (Coled) will be a function of both the threshold voltage and mobility of the drive transistor 220. Accordingly, it is feasible to extract both parameters by taking two separate readings with short and long integration phases.


During the pre-charge phase 324, the signals 304 and 3061, ϕ2) to switches 260 and 262 are set low. Once the input signal 3104) to the switch 254 is set high, the amplifier 250 is set in a unity feedback configuration. In order to protect the output stage of the amplifier 250 against short-circuit current from the supply voltage 210, the signal 3083) to the switch 264 goes high when the signal 3062) to the switch 262 is set low. When the switch 264 is closed, the parasitic capacitance 242 of the supply line is precharged to the common mode voltage, VCM. The common mode voltage, VCM, is a voltage level which must be lower than the ON voltage of the OLED 222. Right before the end of pre-charge phase, the signal 3104) to the switch 254 is set low to prepare the charge pump amplifier 250 for the read cycle.


During the read phase 336, the signals 304, 306 and 3101, ϕ2, ϕ4) to the switches 260, 262 and 254 are set low. The signal 3083) to the switch 264 is kept high to provide a charge transfer path from the drive circuit 202 to the charge-pump amplifier 250. A high enough voltage 312 (VRD_TFT) is applied to the programming voltage input 232 (VData) to minimize the channel resistance of the drive transistor 220. If the integration cycle is long enough, the accumulated charge on the capacitor 252 (Cint) is not a function of integration time. Accordingly, the output voltage of the charge-pump amplifier 250 in this case is equal to:







V
out

=


-


C
oled


C
int





(


V
Data

-

V
th


)







For a shortened integration time, the accumulated charge on the capacitor 252 (Cint) is given by:







Q
int

=







T
int






i
D



(


V
GS

,

V
th

,
μ

)


·
dt







Consequently, the output voltage 256 of the charge-pump amplifier 250 at the end of read cycle equals:







V
out

=


-

1

C
int



·







T
int






i
D



(


V
GS

,

V
th

,
μ

)


·
dt








Hence, the threshold voltage and the mobility of the drive transistor 220 may be extracted by reading the output voltage 256 of the amplifier 250 in the middle and at the end of the read phase 326.



FIG. 3B is a timing diagram for the reading process of the threshold turn-on voltage parameter of the OLED 222 in FIG. 2. The reading process of the OLED 222 also includes four phases, a reset phase 340, an integration phase 342, a pre-charge phase 344 and a read phase 346. Just like the reading process for the drive transistor 220 in FIG. 3A, the reading process for OLED starts by activating the select input 230 with a high select signal 302. The timing of the signals 304, 306, 308, and 3101, ϕ2, ϕ3, ϕ4) to the switches 260, 262, 264 and 254 is the same as the read process for the drive transistor 220 in FIG. 3A. A programming signal 332 for the programming input 232, a signal 334 for the node 244 and an output signal 336 for the output of the amplifier 250 are different from the signals in FIG. 3A.


During the reset phase 340, a high enough voltage level 332 (VRST_OLED) is applied to the programming data input 232 (VData) to maximize the current flow through the drive transistor 220. Consequently, the voltage at the node 244 in FIG. 2 is discharged to ground through the switch 260 to get ready for the next cycle.


During the integration phase 342, the signal 3062) to the switch 262 stays high which provides a charging path from the voltage source 210 through the switch 262. The programming voltage input 232 (VData) is set to a voltage level 332 (VINT_OLED) such that once the capacitor 240 (Coled) is fully charged, the voltage at the node 244 is greater than the turn-on voltage of the OLED 222. In this case, by the end of the integration phase 342, the drive transistor 220 is driving a constant current through the OLED 222.


During the pre-charge phase 344, the drive transistor 220 is turned off by the signal 332 to the programming input 232. The capacitor 240 (Coled) is allowed to discharge until it reaches the turn-on voltage of OLED 222 by the end of the pre-charge phase 344.


During the read phase 346, a high enough voltage 332 (VRD_OLED) is applied to the programming voltage input 232 (VData) to minimize the channel resistance of the drive transistor 220. If the pre-charge phase is long enough, the settled voltage across the capacitor 252 (Cint) will not be a function of pre-charge time. Consequently, the output voltage 256 of the charge-pump amplifier 250 at the end of the read phase is given by:







V
out

=


-


C
oled


C
int



·

V

ON
,
oled








The signal 3083) to the switch 264 is kept high to provide a charge transfer path from the drive circuit 202 to the charge-pump amplifier 250. Thus the output voltage signal 336 may be used to determine the turn-on voltage of the OLED 220.



FIG. 3C is a timing diagram for the direct reading of the drive transistor 220 using the extraction circuit 200 in FIG. 2. The direct reading process has a reset phase 350, a pre-charge phase 352 and an integrate/read phase 354. The readout process is initiated by activating the select input 230 in FIG. 2. The select signal 302 to the select input 230 is kept high throughout the readout process as shown in FIG. 3C. The signals 364 and 3661, ϕ2) for the switches 260 and 262 are inactive in this readout process.


During the reset phase 350, the signals 368 and 3703, ϕ4) for the switches 264 and 254 are set high in order to provide a discharge path to virtual ground. A high enough voltage 372 (VRST_TFT) is applied to the programming input 232 (VData) to maximize the current flow through the drive transistor 220. Consequently, the node 244 is discharged to the common-mode voltage 374 (VCMRST) to get ready for the next cycle.


During the pre-charge phase 354, the drive transistor 220 is turned off by applying an off voltage 372 (VOFF) to the programming input 232 in FIG. 2. The common-mode voltage input 258 to the positive input of the amplifier 250 is raised to VCMRD in order to precharge the line capacitance. At the end of the pre-charge phase 354, the signal 3704) to the switch 254 is turned off to prepare the charge-pump amplifier 250 for the next cycle.


At the beginning of the read/integrate phase 356, the programming voltage input 232 (VData) is raised to VINT_TFT 372 to turn the drive transistor 220 on. The capacitor 240 (COLED) starts to accumulate the charge until VData minus the voltage at the node 244 is equal to the threshold voltage of the drive transistor 220. In the meantime, a proportional charge is accumulated in the capacitor 252 (CINT). Accordingly, at the end of the read cycle 356, the output voltage 376 at the output 256 of the amplifier 250 is a function of the threshold voltage which is given by:







V
out

=



C
oled


C
int


·

(


V
Data

-

V
th


)







As indicated by the above equation, in the case of the direct reading, the output voltage has a positive polarity. Thus, the threshold voltage of the drive transistor 220 may be determined by the output voltage of the amplifier 250.


As explained above, the drive transistor 220 in FIG. 2 may be a p-type transistor. FIG. 4A-4C are signal timing diagrams of the signals applied to the components in FIG. 2 to extract voltage threshold and mobility from the drive transistor 220 and the OLED 222 when the drive transistor 220 is a p-type transistor. In the example where the drive transistor 220 is a p-type transistor, the source of the drive transistor 220 is coupled to the supply line 212 (VD) and the drain of the drive transistor 220 is coupled to the OLED 222. FIG. 4A is a timing diagram showing the signals applied to the extraction circuit 200 to extract the threshold voltage and mobility from the drive transistor 220 when the drive transistor 220 is a p-type transistor. FIG. 4A shows voltage signals 402-416 for the select input 232, the switches 260, 262, 264 and 254, the programming data input 230, the voltage at the node 244 and the output voltage 256 in FIG. 2. The data extraction is performed in three phases, a reset phase 420, an integrate/pre-charge phase 422, and a read phase 424.


As shown in FIG. 4A, the select signal 402 is active low and kept low throughout the readout phases 420, 422 and 424. Throughout the readout process, the signals 404 and 4061, ϕ2) to the switches 260 and 262 are kept low (inactive). During the reset phase, the signals 408 and 4103, ϕ4) at the switches 264 and 254 are set to high in order to charge the node 244 to a reset common mode voltage level VCMrst. The common-mode voltage input 258 on the charge-pump input 258 (VCMrst) should be low enough to keep the OLED 222 off. The programming data input 232 VData is set to a low enough value 412 (VRST_TFT) to provide maximum charging current through the driver transistor 220.


During the integrate/pre-charge phase 422, the common-mode voltage on the common voltage input 258 is reduced to VCMint and the programming input 232 (VData) is increased to a level 412 (VINT_TFT) such that the drive transistor 220 will conduct in the reverse direction. If the allocated time for this phase is long enough, the voltage at the node 244 will decline until the gate to source voltage of the drive transistor 220 reaches the threshold voltage of the drive transistor 220. Before the end of this cycle, the signal 4104) to the switch 254 goes low in order to prepare the charge-pump amplifier 250 for the read phase 424.


The read phase 424 is initiated by decreasing the signal 412 at the programming input 232 (VData) to VRD_TFT so as to turn the drive transistor 220 on. The charge stored on the capacitor 240 (COLED) is now transferred to the capacitor 254 (CINT). At the end of the read phase 424, the signal 4083) to the switch 264 is set to low in order to isolate the charge-pump amplifier 250 from the drive circuit 202. The output voltage signal 416 Vout from the amplifier output 256 is now a function of the threshold voltage of the drive transistor 220 given by:







V
out

=


-


C
oled


C
int





(


V

INT





_





TFT


-

V
th


)







FIG. 4B is a timing diagram for the in-pixel extraction of the threshold voltage of the OLED 222 in FIG. 2 assuming that the drive transistor 220 is a p-type transistor. The extraction process is very similar to the timing of signals to the extraction circuit 200 for an n-type drive transistor in FIG. 3A. FIG. 4B shows voltage signals 432-446 for the select input 230, the switches 260, 262, 264 and 254, the programming data input 232, the voltage at the node 244 and the amplifier output 256 in FIG. 2. The extraction process includes a reset phase 450, an integration phase 452, a pre-charge phase 454 and a read phase 456. The major difference in this readout cycle in comparison to the readout cycle in FIG. 4A is the voltage levels of the signal 442 to the programming data input 232 (VData) that are applied to the driver circuit 210 in each readout phase. For a p-type thin film transistor that may be used for the drive transistor 220, the select signal 430 to the select input 232 is active low. The select input 232 is kept low throughout the readout process as shown in FIG. 4B.


The readout process starts by first resetting the capacitor 240 (COLED) in the reset phase 450. The signal 4341) to the switch 260 is set high to provide a discharge path to ground. The signal 442 to the programming input 232 (VData) is lowered to VRST_OLED in order to turn the drive transistor 220 on.


In the integrate phase 452, the signals 434 and 4361, ϕ2) to the switches 260 and 262 are set to off and on states respectively, to provide a charging path to the OLED 222. The capacitor 240 (COLED) is allowed to charge until the voltage 444 at node 244 goes beyond the threshold voltage of the OLED 222 to turn it on. Before the end of the integration phase 452, the voltage signal 442 to the programming input 232 (VData) is raised to VOFF to turn the drive transistor 220 off.


During the pre-charge phase 454, the accumulated charge on the capacitor 240 (COLED) is discharged into the OLED 222 until the voltage 444 at the node 244 reaches the threshold voltage of the OLED 222. Also, in the pre-charge phase 454, the signals 434 and 4361, ϕ2) to the switches 260 and 262 are turned off while the signals 438 and 4403, ϕ4) to the switches 264 and 254 are set on. This provides the condition for the amplifier 250 to precharge the supply line 212 (VD) to the common mode voltage input 258 (VCM) provided at the positive input of the amplifier 250. At the end of the pre-charge phase, the signal 4304) to the switch 254 is turned off to prepare the charge-pump amplifier 250 for the read phase 456.


The read phase 456 is initiated by turning the drive transistor 220 on when the voltage 442 to the programming input 232 (VData) is lowered to VRD_OLED. The charge stored on the capacitor 240 (COLED) is now transferred to the capacitor 254 (CINT) which builds up the output voltage 446 at the output 256 of the amplifier 250 as a function of the threshold voltage of the OLED 220.



FIG. 4C is a signal timing diagram for the direct extraction of the threshold voltage of the drive transistor 220 in the extraction system 200 in FIG. 2 when the drive transistor 220 is a p-type transistor. FIG. 4C shows voltage signals 462-476 for the select input 230, the switches 260, 262, 264 and 254, the programming data input 232, the voltage at the node 244 and the output voltage 256 in FIG. 2. The extraction process includes a pre-charge phase 480 and an integration phase 482. However, in the timing diagram in FIG. 4C, a dedicated final read phase 484 is illustrated which may be eliminated if the output of charge-pump amplifier 250 is sampled at the end of the integrate phase 482.


The extraction process is initiated by simultaneous pre-charging of the drain storage capacitor 224, the source storage capacitor 226, the capacitor 240 (COLED) and the capacitor 242 in FIG. 2. For this purpose, the signals 462, 468 and 470 to the select line input 230 and the switches 264 and 254 are activated as shown in FIG. 4C. Throughout the readout process, the signals 404 and 4061, ϕ2) to the switches 260 and 262 are kept low. The voltage level of common mode voltage input 258 (VCM) determines the voltage on the supply line 212 and hence the voltage at the node 244. The common mode voltage (VCM) should be low enough such that the OLED 222 does not turn on. The voltage 472 to the programming input 232 (VData) is set to a level (VRST_TFT) low enough to turn the transistor 220 on.


At the beginning of the integrate phase 482, the signal 4704) to the switch 254 is turned off in order to allow the charge-pump amplifier 250 to integrate the current through the drive transistor 220. The output voltage 256 of the charge-pump amplifier 250 will incline at a constant rate which is a function of the threshold voltage of the drive transistor 220 and its gate-to-source voltage. Before the end of the integrate phase 482, the signal 4683) to the switch 264 is turned off to isolate the charge-pump amplifier 250 from the driver circuit 220. Accordingly, the output voltage 256 of the amplifier 250 is given by:







V
out

=


I
TFT

·


T
int


C
int








where ITFT is the drain current of the drive transistor 220 which is a function of the mobility and (VCM−VData−|Vth|). Tint is the length of the integration time. In the optional read phase 484, the signal 4683) to the switch 264 is kept low to isolate the charge-pump amplifier 250 from the driver circuit 202. The output voltage 256, which is a function of the mobility and threshold voltage of the drive transistor 220, may be sampled any time during the read phase 484.



FIG. 4D is a timing diagram for the direct reading of the OLED 222 in FIG. 2. When the drive transistor 220 is turned on with a high enough gate-to-source voltage it may be utilized as an analog switch to access the anode terminal of the OLED 222. In this case, the voltage at the node 244 is essentially equal to the voltage on the supply line 212 (VD). Accordingly, the drive current through the drive transistor 220 will only be a function of the turn-on voltage of the OLED 222 and the voltage that is set on the supply line 212. The drive current may be provided by the charge-pump amplifier 250. When integrated over a certain time period, the output voltage 256 of the integrator circuit 206 is a measure of how much the OLED 222 has aged.



FIG. 4D is a timing diagram showing the signals applied to the extraction circuit 200 to extract the turn-on voltage from the OLED 222 via a direct read. FIG. 4D shows the three phases of the readout process, a pre-charge phase 486, an integrate phase 487 and a read phase 488. FIG. 4D includes a signal 489n or 489p for the select input 230 in FIG. 2, a signal 4901) to the switch 260, a signal 4912) for the switch 262, a signal 4923) for the switch 264, a signal 4934) for the switch 254, a programming voltage signal 494n or 494p for the programming data input 232 in FIG. 2, a voltage 495 of the node 244 in FIG. 2 and an output voltage signal 496 for the output 256 of the amplifier 250 in FIG. 2.


The process starts by activating the select signal corresponding to the desired row of pixels in array 102. As illustrated in FIG. 4D, the select signal 489n is active high for an n-type select transistor and active low for a p-type select transistor. A high select signal 489n is applied to the select input 230 in the case of an n-type drive transistor. A low signal 489p is applied to the select input 230 in the case of a p-type drive transistor for the drive transistor 220.


The select signal 489n or 489p will be kept active during the pre-charge and integrate cycles 486 and 487. The ϕ1 and ϕ2 inputs 490 and 491 are inactive in this readout method. During the pre-charge cycle, the switch signals 492 ϕ3 and 493 ϕ4 are set high in order to provide a signal path such that the parasitic capacitance 242 of the supply line (Cp) and the voltage at the node 244 are pre-charged to the common-mode voltage (VCMOLED) provided to the non-inverting terminal of the amplifier 250. A high enough drive voltage signal 494n or 494p (VON_nTFT or VON_pTFT) is applied to the data input 232 (VData) to operate the drive transistor 220 as an analog switch. Consequently, the supply voltage 212 VD and the node 244 are pre-charged to the common-mode voltage (VCMOLED) to get ready for the next cycle. At the beginning of the integrate phase 487, the switch input 493 ϕ4 is turned off in order to allow the charge-pump module 206 to integrate the current of the OLED 222. The output voltage 496 of the charge-pump module 206 will incline at a constant rate which is a function of the turn-on voltage of the OLED 222 and the voltage 495 set on the node 244, i.e. VCMOLED. Before the end of the integrate phase 487, the switch signal 492 ϕ3 is turned off to isolate the charge-pump module 206 from the pixel circuit 202. From this instant beyond, the output voltage is constant until the charge-pump module 206 is reset for another reading. When integrated over a certain time period, the output voltage of the integrator is given by:







V
out

=


I
OLED




T
int


C
int








which is a measure of how much the OLED has aged. Tint in this equation is the time interval between the falling edge of the switch signal 4934) to the falling edge of the switch signal 4923).


Similar extraction processes of a two transistor type driver circuit such as that in FIG. 2 may be utilized to extract non-uniformity and aging parameters such as threshold voltages and mobility of a three transistor type driver circuit as part of the data extraction system 500 as shown in FIG. 5. The data extraction system 500 includes a drive circuit 502 and a readout circuit 504. The readout circuit 504 is part of the current supply and readout circuit 120 and gathers data from a column of pixels 104 as shown in FIG. 1 and includes a charge pump circuit 506 and a switch-box circuit 508. A voltage source 510 provides the supply voltage (VDD) to the drive circuit 502. The charge-pump and switch-box circuits 506 and 508 are implemented on the top or bottom side of the array 102 such as in the voltage drive 114 and the current supply and readout circuit 120 in FIG. 1. This is achieved by either direct fabrication on the same substrate as for the array 102 or by bonding a microchip on the substrate or a flex as a hybrid solution.


The drive circuit 502 includes a drive transistor 520, an organic light emitting device 522, a drain storage capacitor 524, a source storage capacitor 526 and a select transistor 528. A select line input 530 is coupled to the gate of the select transistor 528. A programming input 532 is coupled through the select transistor 528 to the gate of the drive transistor 220. The select line input 530 is also coupled to the gate of an output transistor 534. The output transistor 534 is coupled to the source of the drive transistor 520 and a voltage monitoring output line 536. The drain of the drive transistor 520 is coupled to the supply voltage source 510 and the source of the drive transistor 520 is coupled to the OLED 522. The source storage capacitor 526 is coupled between the gate and the source of the drive transistor 520. The drain storage capacitor 524 is coupled between the gate and the drain of the drive transistor 520. The OLED 522 has a parasitic capacitance that is modeled as a capacitor 540. The monitor output voltage line 536 also has a parasitic capacitance that is modeled as a capacitor 542. The drive transistor 520 in this example is a thin film transistor that is fabricated from amorphous silicon. A voltage node 544 is the point between the source terminal of the drive transistor 520 and the OLED 522. In this example, the drive transistor 520 is an n-type transistor. The system 500 may be implemented with a p-type drive transistor in place of the drive transistor 520.


The readout circuit 504 includes the charge-pump circuit 506 and the switch-box circuit 508. The charge-pump circuit 506 includes an amplifier 550 which has a capacitor 552 (Cint) in a negative feedback loop. A switch 554 (S4) is utilized to discharge the capacitor 552 Cint during the pre-charge phase. The amplifier 550 has a negative input coupled to the capacitor 552 and the switch 554 and a positive input coupled to a common mode voltage input 558 (VCM). The amplifier 550 has an output 556 that is indicative of various extracted factors of the drive transistor 520 and OLED 522 as will be explained below.


The switch-box circuit 508 includes several switches 560, 562 and 564 to direct the current to and from the drive circuit 502. The switch 560 is used during the reset phase to provide the discharge path to ground. The switch 562 provides the supply connection during normal operation of the pixel 104 and also during the integration phase of the readout process. The switch 564 is used to isolate the charge-pump circuit 506 from the supply line voltage source 510.


In the three transistor drive circuit 502, the readout is normally performed through the monitor line 536. The readout can also be taken through the voltage supply line from the supply voltage source 510 similar to the process of timing signals in FIG. 3A-3C. Accurate timing of the input signals (ϕ14) to the switches 560, 562, 564 and 554, the select input 530 and the programming voltage input 532 (VData) is used to control the performance of the readout circuit 500. Certain voltage levels are applied to the programming data input 532 (VData) and the common mode voltage input 558 (VCM) during each phase of readout process.


The three transistor drive circuit 502 may be programmed differentially through the programming voltage input 532 and the monitoring output 536. Accordingly, the reset and pre-charge phases may be merged together to form a reset/pre-charge phase and which is followed by an integrate phase and a read phase.



FIG. 6A is a timing diagram of the signals involving the extraction of the threshold voltage and mobility of the drive transistor 520 in FIG. 5. The timing diagram includes voltage signals 602-618 for the select input 530, the switches 560, 562, 564 and 554, the programming voltage input 532, the voltage at the gate of the drive transistor 520, the voltage at the node 544 and the output voltage 556 in FIG. 5. The readout process in FIG. 6A has a pre-charge phase 620, an integrate phase 622 and a read phase 624. The readout process initiates by simultaneous precharging of the drain capacitor 524, the source capacitor 526, and the parasitic capacitors 540 and 542. For this purpose, the select line voltage 602 and the signals 608 and 6103, ϕ4) to the switches 564 and 554 are activated as shown in FIG. 6A. The signals 604 and 6061, ϕ2) to the switches 560 and 562 remain low throughout the readout cycle.


The voltage level of the common mode input 558 (VCM) determines the voltage on the output monitor line 536 and hence the voltage at the node 544. The voltage to the common mode input 558 (VCMTFT) should be low enough such that the OLED 522 does not turn on. In the pre-charge phase 620, the voltage signal 612 to the programming voltage input 532 (VData) is high enough (VRST_TFT) to turn the drive transistor 520 on, and also low enough such that the OLED 522 always stays off.


At the beginning of the integrate phase 622, the voltage 602 to the select input 530 is deactivated to allow a charge to be stored on the capacitor 540 (COLED). The voltage at the node 544 will start to rise and the gate voltage of the drive transistor 520 will follow that with a ratio of the capacitance value of the source capacitor 526 over the capacitance of the source capacitor 526 and the drain capacitor 524 [CS1/(CS1+CS2)]. The charging will complete once the difference between the gate voltage of the drive transistor 520 and the voltage at node 544 is equal to the threshold voltage of the drive transistor 520. Before the end of the integration phase 622, the signal 6104) to the switch 554 is turned off to prepare the charge-pump amplifier 550 for the read phase 624.


For the read phase 624, the signal 602 to the select input 530 is activated once more. The voltage signal 612 on the programming input 532 (VRD_TFT) is low enough to keep the drive transistor 520 off. The charge stored on the capacitor 240 (COLED) is now transferred to the capacitor 254 (CINT) and creates an output voltage 618 proportional to the threshold voltage of the drive transistor 520:







V
out

=


-


C
oled


C
int





(


V
G

-

V
th


)







Before the end of the read phase 624, the signal 6083) to the switch 564 turns off to isolate the charge-pump circuit 506 from the drive circuit 502.



FIG. 6B is a timing diagram for the input signals for extraction of the turn-on voltage of the OLED 522 in FIG. 5. FIG. 6B includes voltage signals 632-650 for the select input 530, the switches 560, 562, 564 and 554, the programming voltage input 532, the voltage at the gate of the drive transistor 520, the voltage at the node 544, the common mode voltage input 558, and the output voltage 556 in FIG. 5. The readout process in FIG. 6B has a pre-charge phase 652, an integrate phase 654 and a read phase 656. Similar to the readout for the drive transistor 220 in FIG. 6A, the readout process starts with simultaneous precharging of the drain capacitor 524, the source capacitor 526, and the parasitic capacitors 540 and 542 in the pre-charge phase 652. For this purpose, the signal 632 to the select input 530 and the signals 638 and 6403, ϕ4) to the switches 564 and 554 are activated as shown in FIG. 6B. The signals 634 and 6361, ϕ2) remain low throughout the readout cycle. The input voltage 648 (VCMPre) to the common mode voltage input 258 should be high enough such that the OLED 522 is turned on. The voltage 642 (VPre_OLED) to the programming input 532 (VData) is low enough to keep the drive transistor 520 off.


At the beginning of the integrate phase 654, the signal 632 to the select input 530 is deactivated to allow a charge to be stored on the capacitor 540 (COLED). The voltage at the node 544 will start to fall and the gate voltage of the drive transistor 520 will follow with a ratio of the capacitance value of the source capacitor 526 over the capacitance of the source capacitor 526 and the drain capacitor 524 [CS1/(CS1+CS2)]. The discharging will complete once the voltage at node 544 reaches the ON voltage (VOLED) of the OLED 522. Before the end of the integration phase 654, the signal 6404) to the switch 554 is turned off to prepare the charge-pump circuit 506 for the read phase 656.


For the read phase 656, the signal 632 to the select input 530 is activated once more. The voltage 642 on the (VRD_OLED) programming input 532 should be low enough to keep the drive transistor 520 off. The charge stored on the capacitor 540 (COLED) is then transferred to the capacitor 552 (CINT) creating an output voltage 650 at the amplifier output 556 proportional to the ON voltage of the OLED 522.







V
out

=


-


C
oled


C
int



·

V

ON
,
oled








The signal 6383) turns off before the end of the read phase 656 to isolate the charge-pump circuit 508 from the drive circuit 502.


As shown, the monitor output transistor 534 provides a direct path for linear integration of the current for the drive transistor 520 or the OLED 522. The readout may be carried out in a pre-charge and integrate cycle. However, FIG. 6C shows timing diagrams for the input signals for an additional final read phase which may be eliminated if the output of charge-pump circuit 508 is sampled at the of the integrate phase. FIG. 6C includes voltage signals 660-674 for the select input 530, the switches 560, 562, 564 and 554, the programming voltage input 532, the voltage at the node 544, and the output voltage 556 in FIG. 5. The readout process in FIG. 6C therefore has a pre-charge phase 676, an integrate phase 678 and an optional read phase 680.


The direct integration readout process of the n-type drive transistor 520 in FIG. 5 as shown in FIG. 6C is initiated by simultaneous precharging of the drain capacitor 524, the source capacitor 526, and the parasitic capacitors 540 and 542. For this purpose, the signal 660 to the select input 530 and the signals 666 and 6683, ϕ4) to the switches 564 and 554 are activated as shown in FIG. 6C. The signals 662 and 6641, ϕ2) to the switches 560 and 562 remain low throughout the readout cycle. The voltage level of the common mode voltage input 558 (VCM) determines the voltage on the monitor output line 536 and hence the voltage at the node 544. The voltage signal (VCMTFT) of the common mode voltage input 558 is low enough such that the OLED 522 does not turn on. The signal 670 (VON_TFT) to the programming input 532 (VData) is high enough to turn the drive transistor 520 on.


At the beginning of the integrate phase 678, the signal 6684) to the switch 554 is turned off in order to allow the charge-pump amplifier 550 to integrate the current from the drive transistor 520. The output voltage 674 of the charge-pump amplifier 550 declines at a constant rate which is a function of the threshold voltage, mobility and the gate-to-source voltage of the drive transistor 520. Before the end of the integrate phase, the signal 6663) to the switch 564 is turned off to isolate the charge-pump circuit 508 from the drive circuit 502. Accordingly, the output voltage is given by:







V
out

=


-

I
TFT


·


T
int


C
int








where ITFT is the drain current of drive transistor 520 which is a function of the mobility and (VData−VCM−Vth). Tint is the length of the integration time. The output voltage 674, which is a function of the mobility and threshold voltage of the drive transistor 520, may be sampled any time during the read phase 680.



FIG. 6D shows a timing diagram of input signals for the direct reading of the on (threshold) voltage of the OLED 522 in FIG. 5. FIG. 6D includes voltage signals 682-696 for the select input 530, the switches 560, 562, 564 and 554, the programming voltage input 532, the voltage at the node 544, and the output voltage 556 in FIG. 5. The readout process in FIG. 6C has a pre-charge phase 697, an integrate phase 698 and an optional read phase 699.


The readout process in FIG. 6D is initiated by simultaneous precharging of the drain capacitor 524, the source capacitor 526, and the parasitic capacitors 540 and 542. For this purpose, the signal 682 to the select input 530 and the signals 688 and 6903, ϕ4) to the switches 564 and 554 are activated as shown in FIG. 6D. The signals 684 and 6861, ϕ2) remain low throughout the readout cycle. The voltage level of the common mode voltage input 558 (VCM) determines the voltage on the monitor output line 536 and hence the voltage at the node 544. The voltage signal (VCMOLED) of the common mode voltage input 558 is high enough such to turn the OLED 522 on. The signal 692 (VOFF_TFT) of the programming input 532 (VData) is low enough to keep the drive transistor 520 off.


At the beginning of the integrate phase 698, the signal 6904) to the switch 552 is turned off in order to allow the charge-pump amplifier 550 to integrate the current from the OLED 522. The output voltage 696 of the charge-pump amplifier 550 will incline at a constant rate which is a function of the threshold voltage and the voltage across the OLED 522.


Before the end of the integrate phase 698, the signal 6683) to the switch 564 is turned off to isolate the charge-pump circuit 508 from the drive circuit 502. Accordingly, the output voltage is given by:







V
out

=


I
OLED

·


T
int


C
int








where IOLED is the OLED current which is a function of (VCM−Vth), and Tint is the length of the integration time. The output voltage, which is a function of the threshold voltage of the OLED 522, may be sampled any time during the read phase 699.


The controller 112 in FIG. 1 may be conveniently implemented using one or more general purpose computer systems, microprocessors, digital signal processors, micro-controllers, application specific integrated circuits (ASIC), programmable logic devices (PLD), field programmable logic devices (FPLD), field programmable gate arrays (FPGA) and the like, programmed according to the teachings as described and illustrated herein, as will be appreciated by those skilled in the computer, software and networking arts.


In addition, two or more computing systems or devices may be substituted for any one of the controllers described herein. Accordingly, principles and advantages of distributed processing, such as redundancy, replication, and the like, also can be implemented, as desired, to increase the robustness and performance of controllers described herein. The controllers may also be implemented on a computer system or systems that extend across any network environment using any suitable interface mechanisms and communications technologies including, for example telecommunications in any suitable form (e.g., voice, modem, and the like), Public Switched Telephone Network (PSTNs), Packet Data Networks (PDNs), the Internet, intranets, a combination thereof, and the like.


The operation of the example data extraction process, will now be described with reference to the flow diagram shown in FIG. 7. The flow diagram in FIG. 7 is representative of example machine readable instructions for determining the threshold voltages and mobility of a simple driver circuit that allows maximum aperture for a pixel 104 in FIG. 1. In this example, the machine readable instructions comprise an algorithm for execution by: (a) a processor, (b) a controller, and/or (c) one or more other suitable processing device(s). The algorithm may be embodied in software stored on tangible media such as, for example, a flash memory, a CD-ROM, a floppy disk, a hard drive, a digital video (versatile) disk (DVD), or other memory devices, but persons of ordinary skill in the art will readily appreciate that the entire algorithm and/or parts thereof could alternatively be executed by a device other than a processor and/or embodied in firmware or dedicated hardware in a well known manner (e.g., it may be implemented by an application specific integrated circuit (ASIC), a programmable logic device (PLD), a field programmable logic device (FPLD), a field programmable gate array (FPGA), discrete logic, etc.). For example, any or all of the components of the extraction sequence could be implemented by software, hardware, and/or firmware. Also, some or all of the machine readable instructions represented by the flowchart of FIG. 7 may be implemented manually. Further, although the example algorithm is described with reference to the flowchart illustrated in FIG. 7, persons of ordinary skill in the art will readily appreciate that many other methods of implementing the example machine readable instructions may alternatively be used. For example, the order of execution of the blocks may be changed, and/or some of the blocks described may be changed, eliminated, or combined.


A pixel 104 under study is selected by turning the corresponding select and programming lines on (700). Once the pixel 104 is selected, the readout is performed in four phases. The readout process begins by first discharging the parasitic capacitance across the OLED (Coled) in the reset phase (702). Next, the drive transistor is turned on for a certain amount of time which allows some charge to be accumulated on the capacitance across the OLED Coled (704). In the integrate phase, the select transistor is turned off to isolate the charge on the capacitance across the OLED Coled and then the line parasitic capacitance (CP) is precharged to a known voltage level (706). Finally, the drive transistor is turned on again to allow the charge on the capacitance across the OLED Coled to be transferred to the charge-pump amplifier output in a read phase (708). The amplifier's output represent a quantity which is a function of mobility and threshold voltage. The readout process is completed by deselecting the pixel to prevent interference while other pixels are being calibrated (710).



FIG. 8 is a flow diagram of different extraction cycles and parameter applications for pixel circuits such as the two transistor circuit in FIG. 2 and the three transistor circuit in FIG. 5. One process is an in-pixel integration that involves charge transfer (800). A charge relevant to the parameter of interest is accumulated in the internal capacitance of the pixel (802). The charge is then transferred to the external read-out circuit such as the charge-pump or integrator to establish a proportional voltage (804). Another process is an off-pixel integration or direct integration (810). The device current is directly integrated by the external read-out circuit such as the charge-pump or integrator circuit (812).


In both processes, the generated voltage is post-processed to resolve the parameter of interest such as threshold voltage or mobility of the drive transistor or the turn-on voltage of the OLED (820). The extracted parameters may be then used for various applications (822). Examples of using the parameters include modifying the programming data according to the extracted parameters to compensate for pixel variations (824). Another example is to pre-age the panel of pixels (826). Another example is to evaluate the process yield of the panel of pixels after fabrication (828).



FIG. 9 is a block diagram and chart of the components of a data extraction system that includes a pixel circuit 900, a switch box 902 and a readout circuit 904 that may be a charge pump/integrator. The building components (910) of the pixel circuit 900 include an emission device such as an OLED, a drive device such as a drive transistor, a storage device such as a capacitor and access switches such as a select switch. The building components 912 of the switch box 902 include a set of electronic switches that may be controlled by external control signals. The building components 914 of the readout circuit 904 include an amplifier, a capacitor and a reset switch.


The parameters of interest may be stored as represented by the box 920. The parameters of interest in this example may include the threshold voltage of the drive transistor, the mobility of the drive transistor and the turn-on voltage of the OLED. The functions of the switch box 902 are represented by the box 922. The functions include steering current in and out of the pixel circuit 900, providing a discharge path between the pixel circuit 900 and the charge-pump of the readout circuit 904 and isolating the charge-pump of the readout circuit 904 from the pixel circuit 900. The functions of the readout circuit 904 are represented by the box 924. One function includes transferring a charge from the internal capacitance of the pixel circuit 900 to the capacitor of the readout circuit 904 to generate a voltage proportional to that charge in the case of in-pixel integration as in steps 800-804 in FIG. 8. Another function includes integrating the current of the drive transistor or the OLED of the pixel circuit 900 over a certain time in order to generate a voltage proportional to the current as in steps 810-814 of FIG. 8.


While particular embodiments and applications of the present invention have been illustrated and described, it is to be understood that the invention is not limited to the precise construction and compositions disclosed herein and that various modifications, changes, and variations can be apparent from the foregoing descriptions without departing from the spirit and scope of the invention as defined in the appended claims.

Claims
  • 1. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective drive device, and including: a charge-pump amplifier having a current input and a voltage output, the charge-pump amplifier including an operational amplifier in negative feedback configuration, wherein the feedback is provided by a capacitor connected between the output and the inverting input of the operational amplifier, a common-mode voltage source to drive the non-inverting input of the operational amplifier, and an electronic switch coupled across the capacitor to reset the capacitor, anda switch module including the input coupled to the output of the respective pixel circuit and an output coupled to the input of respective charge-pump amplifier, the switch module including a plurality of electronic switches to steer current in and out of the pixel circuit, provide a discharge path between the pixel circuit and the charge-pump amplifier, and isolate the charge-pump amplifier from the pixel circuit; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage.
  • 2. The device according to claim 1, wherein the sequence includes providing a program voltage to the programming input to pre-charge an internal capacitance of each pixel circuit to a charge level and transfer the charge to the respective charge-pump amplifier via the respective switch module to generate the output voltage value.
  • 3. The device according to claim 1, wherein the sequence includes providing a program voltage to the programming input to provide a current from each pixel circuit to the respective charge-pump amplifier via the respective switch module to produce the output voltage value by integration.
  • 4. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device comprising a drive transistor to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal,a select transistor coupled between the programming input and a gate of the drive transistor, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective drive device; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of providing a select signal to the gate of the select transistor for operating the select transistor as an electronic switch and capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage,wherein each pixel circuit further comprises a monitor transistor coupled between the input of the readout circuit and the source or drain terminal of the drive transistor, andwherein the controller is capable of providing the select signal to the gate of the monitor transistor for operating the monitor transistor as an electronic switch.
  • 5. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device comprising a drive transistor to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective drive device; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage,wherein the parameter comprises a threshold voltage of the drive transistor,wherein the controller is capable of pre-charging an internal capacitance of each pixel to a level that does not turn the respective OLED on, whereby the stored charge discharges through the respective readout circuit until the gate-to-source drive-voltage of the respective drive transistor is equal to its threshold voltage, andwherein each readout circuit output voltage is a function of the respective threshold voltage, respective feedback capacitor, the respective OLED capacitance, and the respective programming input voltage.
  • 6. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device comprising a drive transistor to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective drive device; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage,wherein the parameter is the mobility of the drive transistor,wherein the controller is capable of pre-charging an internal capacitance of each pixel to a level that does not turn the respective OLED on, whereby a stored charge of the respective internal capacitance partially discharges through the respective readout circuit over a shorter integration time, andwherein each readout circuit output voltage is a function of the respective drive transistor's mobility, respective integration time, respective feedback capacitor, and the respective programming signal input voltage.
  • 7. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device comprising a drive transistor to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of parameters of the respective drive device; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage,wherein the parameters are threshold voltage and mobility of the drive transistor,wherein the controller is capable of setting the programming signal voltage to a level to turn each drive transistor on, whereby current of the drive transistor is steered into the respective readout circuit to be directly integrated for a certain amount of time, andwherein each readout circuit output voltage is a value of the respective threshold voltage and mobility as a function of a feedback capacitor of the readout circuit, length of integration time, and the programming signal voltage.
  • 8. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective OLED, and including: a charge-pump amplifier having a current input and a voltage output, each charge-pump amplifier including an operational amplifier in negative feedback configuration, wherein the feedback is provided by a capacitor connected between the output and the inverting input of the operational amplifier, a common-mode voltage source to drive the non-inverting input of the operational amplifier, and an electronic switch coupled across the capacitor to reset the capacitor, anda switch module including the input coupled to the output of the respective pixel circuit and an output coupled to the input of the respective charge-pump amplifier, each switch module including a plurality of electronic switches to steer current in and out of the respective pixel circuit, provide a discharge path between the respective pixel circuit and the respective charge-pump amplifier, and isolate the respective charge-pump amplifier from the respective pixel circuit; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage.
  • 9. The device according to claim 8, wherein the sequence includes providing a programming signal voltage to the programming input to pre-charge an internal capacitance of each pixel circuit to a charge level and transfer the charge to the respective charge-pump amplifier via the respective switch module to generate the respective output voltage value.
  • 10. The device according to claim 8, wherein the sequence includes providing a programming signal voltage to the programming input to provide a current from each pixel circuit to the respective charge-pump amplifier via the respective switch module to produce the respective output voltage value by integration.
  • 11. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device comprising a drive transistor to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective OLED; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage,wherein each drive transistor is connected to an input of the respective readout circuit through the source or drain terminal of the drive transistor,wherein the parameter is the turn-on voltage of the OLED,wherein the controller is capable of pre-charging the OLED capacitance to a level higher than the turn-on voltage of the OLED, whereby the charge on the OLED capacitance is then discharged through the OLED until it reaches the turn-on voltage of the OLED, and whereby the remaining charge on the OLED capacitance is transferred to the readout circuit, andwherein the readout circuit output is a value of the turn-on voltage of the OLED as a function of a feedback capacitance of the readout circuit, and the OLED capacitance.
  • 12. An organic light emitting device (OLED) based display device, comprising: a plurality of pixel circuits, each pixel circuit including: an organic light emitting device (OLED),a drive device comprising a drive transistor to provide a programmable drive current to the light emitting device,a programming input to provide a programming signal, anda storage device to store the programming signal;a plurality of readout circuits, each readout circuit coupled to one of the pixel circuits and capable of generating an output voltage which is a function of a parameter of the respective OLED; anda controller coupled to the pixel circuits, and the readout circuits, the controller capable of controlling input signals to the pixel circuits, and the readout circuit in a predetermined sequence to produce the output voltage value, and capable of adjusting the programming signal for each pixel based on the output voltage,wherein each drive transistor is connected to an input of the respective readout circuit through the source or drain terminal of the drive transistor,wherein the parameter is the turn-on voltage of the OLED,wherein the controller is capable of setting the programming signal voltage to a level to operate each drive transistor as a switch, whereby the current of the respective OLED is steered into the respective readout circuit to be directly integrated for a certain amount of time, andwherein each readout circuit output voltage is a value of the OLED's turn-on voltage as a function of a feedback capacitor of the readout circuit, length of integration time, and a common-mode voltage set at a non-inverting input of the readout circuit.
CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of, and claims priority to, U.S. patent application Ser. No. 15/420,503, filed Jan. 31, 2017, now allowed, which is a continuation of U.S. patent application Ser. No. 15/154,445, filed May 13, 2016, now U.S. Pat. No. 9,589,490, which is a continuation of U.S. patent application Ser. No. 14/680,554, filed Apr. 7, 2015, now U.S. Pat. No. 9,355,584, which is a continuation of U.S. patent application Ser. No. 13/950,795, filed Jul. 25, 2013, now U.S. Pat. No. 9,093,029, which is a continuation of U.S. patent application Ser. No. 13/112,468, filed May 20, 2011, now U.S. Pat. No. 8,476,217, each of which is hereby incorporated by reference herein in its entirety.

US Referenced Citations (590)
Number Name Date Kind
3506851 Polkinghorn Apr 1970 A
3774055 Bapat Nov 1973 A
4090096 Nagami May 1978 A
4160934 Kirsch Jul 1979 A
4295091 Ponkala Oct 1981 A
4354162 Wright Oct 1982 A
4943956 Noro Jul 1990 A
4996523 Bell Feb 1991 A
5153420 Hack Oct 1992 A
5198803 Shie Mar 1993 A
5204661 Hack Apr 1993 A
5266515 Robb Nov 1993 A
5489918 Mosier Feb 1996 A
5498880 Lee Mar 1996 A
5557342 Eto Sep 1996 A
5561381 Jenkins Oct 1996 A
5572444 Lentz Nov 1996 A
5589847 Lewis Dec 1996 A
5619033 Weisfield Apr 1997 A
5648276 Hara Jul 1997 A
5670973 Bassetti Sep 1997 A
5684365 Tang Nov 1997 A
5691783 Numao Nov 1997 A
5714968 Ikeda Feb 1998 A
5723950 Wei Mar 1998 A
5744824 Kousai Apr 1998 A
5745660 Kolpatzik Apr 1998 A
5748160 Shieh May 1998 A
5815303 Berlin Sep 1998 A
5870071 Kawahata Feb 1999 A
5874803 Garbuzov Feb 1999 A
5880582 Sawada Mar 1999 A
5903248 Irwin May 1999 A
5917280 Burrows Jun 1999 A
5923794 McGrath Jul 1999 A
5945972 Okumura Aug 1999 A
5949398 Kim Sep 1999 A
5952789 Stewart Sep 1999 A
5952991 Akiyama Sep 1999 A
5982104 Sasaki Nov 1999 A
5990629 Yamada Nov 1999 A
6023259 Howard Feb 2000 A
6069365 Chow May 2000 A
6091203 Kawashima Jul 2000 A
6097360 Holloman Aug 2000 A
6144222 Ho Nov 2000 A
6177915 Beeteson Jan 2001 B1
6229506 Dawson May 2001 B1
6229508 Kane May 2001 B1
6246180 Nishigaki Jun 2001 B1
6252248 Sano Jun 2001 B1
6259424 Kurogane Jul 2001 B1
6262589 Tamukai Jul 2001 B1
6271825 Greene Aug 2001 B1
6288696 Holloman Sep 2001 B1
6304039 Appelberg Oct 2001 B1
6307322 Dawson Oct 2001 B1
6310962 Chung Oct 2001 B1
6320325 Cok Nov 2001 B1
6323631 Juang Nov 2001 B1
6329971 McKnight Dec 2001 B2
6356029 Hunter Mar 2002 B1
6373454 Knapp Apr 2002 B1
6377237 Sojourner Apr 2002 B1
6392617 Gleason May 2002 B1
6404139 Sasaki et al. Jun 2002 B1
6414661 Shen Jul 2002 B1
6417825 Stewart Jul 2002 B1
6433488 Bu Aug 2002 B1
6437106 Stoner Aug 2002 B1
6445369 Yang Sep 2002 B1
6475845 Kimura Nov 2002 B2
6501098 Yamazaki Dec 2002 B2
6501466 Yamagishi Dec 2002 B1
6518962 Kimura Feb 2003 B2
6522315 Ozawa Feb 2003 B2
6525683 Gu Feb 2003 B1
6531827 Kawashima Mar 2003 B2
6541921 Luciano, Jr. Apr 2003 B1
6542138 Shannon Apr 2003 B1
6555420 Yamazaki Apr 2003 B1
6577302 Hunter Jun 2003 B2
6580408 Bae Jun 2003 B1
6580657 Sanford Jun 2003 B2
6583398 Harkin Jun 2003 B2
6583775 Sekiya Jun 2003 B1
6594606 Everitt Jul 2003 B2
6618030 Kane Sep 2003 B2
6639244 Yamazaki Oct 2003 B1
6668645 Gilmour Dec 2003 B1
6677713 Sung Jan 2004 B1
6680580 Sung Jan 2004 B1
6687266 Ma Feb 2004 B1
6690000 Muramatsu Feb 2004 B1
6690344 Takeuchi Feb 2004 B1
6693388 Oomura Feb 2004 B2
6693610 Shannon Feb 2004 B2
6697057 Koyama Feb 2004 B2
6720942 Lee Apr 2004 B2
6724151 Yoo Apr 2004 B2
6734636 Sanford May 2004 B2
6738034 Kaneko May 2004 B2
6738035 Fan May 2004 B1
6753655 Shih Jun 2004 B2
6753834 Mikami Jun 2004 B2
6756741 Li Jun 2004 B2
6756952 Decaux Jun 2004 B1
6756958 Furuhashi Jun 2004 B2
6765549 Yamakazi Jul 2004 B1
6771028 Winters Aug 2004 B1
6777712 Sanford Aug 2004 B2
6777888 Kondo Aug 2004 B2
6781306 Park Aug 2004 B2
6781567 Kimura Aug 2004 B2
6806497 Jo Oct 2004 B2
6806638 Lih et al. Oct 2004 B2
6806857 Sempel Oct 2004 B2
6809706 Shimoda Oct 2004 B2
6815975 Nara Nov 2004 B2
6828950 Koyama Dec 2004 B2
6853371 Miyajima Feb 2005 B2
6859193 Yumoto Feb 2005 B1
6873117 Ishizuka Mar 2005 B2
6876346 Anzai Apr 2005 B2
6885356 Hashimoto Apr 2005 B2
6900485 Lee May 2005 B2
6903734 Eu Jun 2005 B2
6909243 Inukai Jun 2005 B2
6909419 Zavracky Jun 2005 B2
6911960 Yokoyama Jun 2005 B1
6911964 Lee Jun 2005 B2
6914448 Jinno Jul 2005 B2
6919871 Kwon Jul 2005 B2
6924602 Komiya Aug 2005 B2
6937215 Lo Aug 2005 B2
6937220 Kitaura Aug 2005 B2
6940214 Komiya Sep 2005 B1
6943500 LeChevalier Sep 2005 B2
6947022 McCartney Sep 2005 B2
6954194 Matsumoto Oct 2005 B2
6956547 Bae Oct 2005 B2
6975142 Azami Dec 2005 B2
6975332 Arnold Dec 2005 B2
6995510 Murakami Feb 2006 B2
6995519 Arnold Feb 2006 B2
7023408 Chen Apr 2006 B2
7027015 Booth, Jr. Apr 2006 B2
7027078 Reihl Apr 2006 B2
7034793 Sekiya Apr 2006 B2
7038392 Libsch May 2006 B2
7053875 Chou May 2006 B2
7057359 Hung Jun 2006 B2
7061451 Kimura Jun 2006 B2
7064733 Cok Jun 2006 B2
7071932 Libsch Jul 2006 B2
7088051 Cok Aug 2006 B1
7088052 Kimura Aug 2006 B2
7102378 Kuo Sep 2006 B2
7106285 Naugler Sep 2006 B2
7112820 Chang et al. Sep 2006 B2
7116058 Lo Oct 2006 B2
7119493 Fryer Oct 2006 B2
7122835 Ikeda Oct 2006 B1
7127380 Iverson Oct 2006 B1
7129914 Knapp Oct 2006 B2
7161566 Cok Jan 2007 B2
7164417 Cok Jan 2007 B2
7193589 Yoshida Mar 2007 B2
7224332 Cok May 2007 B2
7227519 Kawase Jun 2007 B1
7245277 Ishizuka Jul 2007 B2
7246912 Burger Jul 2007 B2
7248236 Nathan Jul 2007 B2
7262753 Tanghe Aug 2007 B2
7274363 Ishizuka Sep 2007 B2
7310092 Imamura Dec 2007 B2
7315295 Kimura Jan 2008 B2
7321348 Cok Jan 2008 B2
7339560 Sun Mar 2008 B2
7355574 Leon Apr 2008 B1
7358941 Ono Apr 2008 B2
7368868 Sakamoto May 2008 B2
7397485 Miller Jul 2008 B2
7411571 Huh Aug 2008 B2
7414600 Nathan Aug 2008 B2
7423617 Giraldo Sep 2008 B2
7453054 Lee Nov 2008 B2
7474285 Kimura Jan 2009 B2
7502000 Yuki Mar 2009 B2
7528812 Tsuge May 2009 B2
7535449 Miyazawa May 2009 B2
7554512 Steer Jun 2009 B2
7569849 Nathan Aug 2009 B2
7576718 Miyazawa Aug 2009 B2
7580012 Kim Aug 2009 B2
7589707 Chou Sep 2009 B2
7605792 Son Oct 2009 B2
7609239 Chang Oct 2009 B2
7619594 Hu Nov 2009 B2
7619597 Nathan Nov 2009 B2
7633470 Kane Dec 2009 B2
7656370 Schneider Feb 2010 B2
7675485 Steer Mar 2010 B2
7800558 Routley Sep 2010 B2
7847764 Cok Dec 2010 B2
7859492 Kohno Dec 2010 B2
7868859 Tomida Jan 2011 B2
7876294 Sasaki Jan 2011 B2
7924249 Nathan Apr 2011 B2
7932883 Klompenhouwer Apr 2011 B2
7969390 Yoshida Jun 2011 B2
7978187 Nathan Jul 2011 B2
7994712 Sung Aug 2011 B2
8026876 Nathan Sep 2011 B2
8031180 Miyamoto Oct 2011 B2
8049420 Tamura Nov 2011 B2
8077123 Naugler, Jr. Dec 2011 B2
8115707 Nathan Feb 2012 B2
8208084 Lin Jun 2012 B2
8223177 Nathan Jul 2012 B2
8232939 Nathan Jul 2012 B2
8259044 Nathan Sep 2012 B2
8264431 Bulovic Sep 2012 B2
8279143 Nathan Oct 2012 B2
8294696 Min Oct 2012 B2
8314783 Sambandan Nov 2012 B2
8339386 Leon Dec 2012 B2
8441206 Myers May 2013 B2
8493296 Ogawa Jul 2013 B2
8581809 Nathan Nov 2013 B2
8654114 Shimizu Feb 2014 B2
9125278 Nathan Sep 2015 B2
9368063 Chaji Jun 2016 B2
9418587 Chaji Aug 2016 B2
9430958 Chaji Aug 2016 B2
9472139 Nathan Oct 2016 B2
9489891 Nathan Nov 2016 B2
9489897 Jaffari Nov 2016 B2
9502653 Chaji Nov 2016 B2
9530349 Chaji Dec 2016 B2
9530352 Nathan Dec 2016 B2
9536460 Chaji Jan 2017 B2
9536465 Chaji Jan 2017 B2
9589490 Chaji Mar 2017 B2
9633597 Nathan Apr 2017 B2
9640112 Jaffari May 2017 B2
9721512 Soni Aug 2017 B2
9741279 Chaji Aug 2017 B2
9741282 Giannikouris Aug 2017 B2
9761170 Chaji Sep 2017 B2
9773439 Chaji Sep 2017 B2
9773441 Chaji Sep 2017 B2
9786209 Chaji Oct 2017 B2
20010002703 Koyama Jun 2001 A1
20010009283 Arao Jul 2001 A1
20010024181 Kubota Sep 2001 A1
20010024186 Kane Sep 2001 A1
20010026257 Kimura Oct 2001 A1
20010030323 Ikeda Oct 2001 A1
20010035863 Kimura Nov 2001 A1
20010038367 Inukai Nov 2001 A1
20010040541 Yoneda Nov 2001 A1
20010043173 Troutman Nov 2001 A1
20010045929 Prache Nov 2001 A1
20010052606 Sempel Dec 2001 A1
20010052940 Hagihara Dec 2001 A1
20020000576 Inukai Jan 2002 A1
20020011796 Koyama Jan 2002 A1
20020011799 Kimura Jan 2002 A1
20020012057 Kimura Jan 2002 A1
20020014851 Tai Feb 2002 A1
20020018034 Ohki Feb 2002 A1
20020030190 Ohtani Mar 2002 A1
20020047565 Nara Apr 2002 A1
20020052086 Maeda May 2002 A1
20020067134 Kawashima Jun 2002 A1
20020084463 Sanford Jul 2002 A1
20020101152 Kimura Aug 2002 A1
20020101172 Bu Aug 2002 A1
20020105279 Kimura Aug 2002 A1
20020117722 Osada Aug 2002 A1
20020122308 Ikeda Sep 2002 A1
20020158587 Komiya Oct 2002 A1
20020158666 Azami Oct 2002 A1
20020158823 Zavracky Oct 2002 A1
20020167471 Everitt Nov 2002 A1
20020167474 Everitt Nov 2002 A1
20020169575 Everitt Nov 2002 A1
20020180369 Koyama Dec 2002 A1
20020180721 Kimura Dec 2002 A1
20020181276 Yamazaki Dec 2002 A1
20020183945 Everitt Dec 2002 A1
20020186214 Siwinski Dec 2002 A1
20020190924 Asano Dec 2002 A1
20020190971 Nakamura Dec 2002 A1
20020195967 Kim Dec 2002 A1
20020195968 Sanford Dec 2002 A1
20030020413 Oomura Jan 2003 A1
20030030603 Shimoda Feb 2003 A1
20030043088 Booth Mar 2003 A1
20030057895 Kimura Mar 2003 A1
20030058226 Bertram Mar 2003 A1
20030062524 Kimura Apr 2003 A1
20030063081 Kimura Apr 2003 A1
20030071821 Sundahl Apr 2003 A1
20030076048 Rutherford Apr 2003 A1
20030090447 Kimura May 2003 A1
20030090481 Kimura May 2003 A1
20030107560 Yumoto Jun 2003 A1
20030111966 Mikami Jun 2003 A1
20030122745 Miyazawa Jul 2003 A1
20030122749 Booth, Jr. Jul 2003 A1
20030122813 Ishizuki Jul 2003 A1
20030142088 LeChevalier Jul 2003 A1
20030146897 Hunter Aug 2003 A1
20030151569 Lee Aug 2003 A1
20030156101 Le Chevalier Aug 2003 A1
20030169241 LeChevalier Sep 2003 A1
20030174152 Noguchi Sep 2003 A1
20030179626 Sanford Sep 2003 A1
20030185438 Osawa Oct 2003 A1
20030197663 Lee Oct 2003 A1
20030210256 Mori Nov 2003 A1
20030230141 Gilmour Dec 2003 A1
20030230980 Forrest Dec 2003 A1
20030231148 Lin Dec 2003 A1
20040032382 Cok Feb 2004 A1
20040041750 Abe Mar 2004 A1
20040066357 Kawasaki Apr 2004 A1
20040070557 Asano Apr 2004 A1
20040070565 Nayar Apr 2004 A1
20040090186 Kanauchi May 2004 A1
20040090400 Yoo May 2004 A1
20040095297 Libsch May 2004 A1
20040100427 Miyazawa May 2004 A1
20040108518 Jo Jun 2004 A1
20040135749 Kondakov Jul 2004 A1
20040140982 Pate Jul 2004 A1
20040145547 Oh Jul 2004 A1
20040150592 Mizukoshi Aug 2004 A1
20040150594 Koyama Aug 2004 A1
20040150595 Kasai Aug 2004 A1
20040155841 Kasai Aug 2004 A1
20040174347 Sun Sep 2004 A1
20040174349 Libsch Sep 2004 A1
20040174354 Ono Sep 2004 A1
20040178743 Miller Sep 2004 A1
20040183759 Stevenson Sep 2004 A1
20040196275 Hattori Oct 2004 A1
20040207615 Yumoto Oct 2004 A1
20040227697 Mori Nov 2004 A1
20040233125 Tanghe Nov 2004 A1
20040239596 Ono Dec 2004 A1
20040246246 Tobita Dec 2004 A1
20040252089 Ono Dec 2004 A1
20040257313 Kawashima Dec 2004 A1
20040257353 Imamura Dec 2004 A1
20040257355 Naugler Dec 2004 A1
20040263437 Hattori Dec 2004 A1
20040263444 Kimura Dec 2004 A1
20040263445 Inukai Dec 2004 A1
20040263541 Takeuchi Dec 2004 A1
20050007355 Miura Jan 2005 A1
20050007357 Yamashita Jan 2005 A1
20050007392 Kasai Jan 2005 A1
20050017650 Fryer Jan 2005 A1
20050024081 Kuo Feb 2005 A1
20050024393 Kondo Feb 2005 A1
20050030267 Tanghe Feb 2005 A1
20050057484 Diefenbaugh Mar 2005 A1
20050057580 Yamano Mar 2005 A1
20050067970 Libsch Mar 2005 A1
20050067971 Kane Mar 2005 A1
20050068270 Awakura Mar 2005 A1
20050068275 Kane Mar 2005 A1
20050073264 Matsumoto Apr 2005 A1
20050083323 Suzuki Apr 2005 A1
20050088103 Kageyama Apr 2005 A1
20050105031 Shih May 2005 A1
20050110420 Arnold May 2005 A1
20050110807 Chang May 2005 A1
20050122294 Ben-David Jun 2005 A1
20050140598 Kim Jun 2005 A1
20050140610 Smith Jun 2005 A1
20050145891 Abe Jul 2005 A1
20050156831 Yamazaki Jul 2005 A1
20050162079 Sakamoto Jul 2005 A1
20050168416 Hashimoto Aug 2005 A1
20050179626 Yuki Aug 2005 A1
20050179628 Kimura Aug 2005 A1
20050185200 Tobol Aug 2005 A1
20050200575 Kim Sep 2005 A1
20050206590 Sasaki Sep 2005 A1
20050212787 Noguchi Sep 2005 A1
20050219184 Zehner Oct 2005 A1
20050225683 Nozawa Oct 2005 A1
20050248515 Naugler Nov 2005 A1
20050269959 Uchino Dec 2005 A1
20050269960 Ono Dec 2005 A1
20050280615 Cok Dec 2005 A1
20050280766 Johnson Dec 2005 A1
20050285822 Reddy Dec 2005 A1
20050285825 Eom Dec 2005 A1
20060001613 Routley Jan 2006 A1
20060007072 Choi Jan 2006 A1
20060007206 Reddy et al. Jan 2006 A1
20060007249 Reddy Jan 2006 A1
20060012310 Chen Jan 2006 A1
20060012311 Ogawa Jan 2006 A1
20060015272 Giraldo et al. Jan 2006 A1
20060022305 Yamashita Feb 2006 A1
20060022907 Uchino Feb 2006 A1
20060027807 Nathan Feb 2006 A1
20060030084 Young Feb 2006 A1
20060038758 Routley Feb 2006 A1
20060038762 Chou Feb 2006 A1
20060044227 Hadcock Mar 2006 A1
20060061248 Cok Mar 2006 A1
20060066533 Sato Mar 2006 A1
20060077134 Hector et al. Apr 2006 A1
20060077135 Cok Apr 2006 A1
20060077142 Kwon Apr 2006 A1
20060082523 Guo Apr 2006 A1
20060092185 Jo May 2006 A1
20060097628 Suh May 2006 A1
20060097631 Lee May 2006 A1
20060103324 Kim May 2006 A1
20060103611 Choi May 2006 A1
20060125740 Shirasaki et al. Jun 2006 A1
20060149493 Sambandan Jul 2006 A1
20060170623 Naugler, Jr. Aug 2006 A1
20060176250 Nathan Aug 2006 A1
20060208961 Nathan Sep 2006 A1
20060208971 Deane Sep 2006 A1
20060214888 Schneider Sep 2006 A1
20060231740 Kasai Oct 2006 A1
20060232522 Roy Oct 2006 A1
20060244697 Lee Nov 2006 A1
20060256048 Fish et al. Nov 2006 A1
20060261841 Fish Nov 2006 A1
20060273997 Nathan Dec 2006 A1
20060279481 Haruna Dec 2006 A1
20060284801 Yoon Dec 2006 A1
20060284802 Kohno Dec 2006 A1
20060284895 Marcu Dec 2006 A1
20060290614 Nathan Dec 2006 A1
20060290618 Goto Dec 2006 A1
20070001937 Park Jan 2007 A1
20070001939 Hashimoto Jan 2007 A1
20070008251 Kohno Jan 2007 A1
20070008268 Park Jan 2007 A1
20070008297 Bassetti Jan 2007 A1
20070057873 Uchino Mar 2007 A1
20070057874 Le Roy Mar 2007 A1
20070069998 Naugler Mar 2007 A1
20070075727 Nakano Apr 2007 A1
20070076226 Klompenhouwer Apr 2007 A1
20070080905 Takahara Apr 2007 A1
20070080906 Tanabe Apr 2007 A1
20070080908 Nathan Apr 2007 A1
20070097038 Yamazaki May 2007 A1
20070097041 Park May 2007 A1
20070103411 Cok et al. May 2007 A1
20070103419 Uchino May 2007 A1
20070115221 Buchhauser May 2007 A1
20070126672 Tada et al. Jun 2007 A1
20070164664 Ludwicki Jul 2007 A1
20070164937 Jung Jul 2007 A1
20070164938 Shin Jul 2007 A1
20070182671 Nathan Aug 2007 A1
20070236134 Ho Oct 2007 A1
20070236440 Wacyk Oct 2007 A1
20070236517 Kimpe Oct 2007 A1
20070241999 Lin Oct 2007 A1
20070273294 Nagayama Nov 2007 A1
20070285359 Ono Dec 2007 A1
20070290957 Cok Dec 2007 A1
20070290958 Cok Dec 2007 A1
20070296672 Kim Dec 2007 A1
20080001525 Chao Jan 2008 A1
20080001544 Murakami Jan 2008 A1
20080030518 Higgins Feb 2008 A1
20080036706 Kitazawa Feb 2008 A1
20080036708 Shirasaki Feb 2008 A1
20080042942 Takahashi Feb 2008 A1
20080042948 Yamashita Feb 2008 A1
20080048951 Naugler, Jr. Feb 2008 A1
20080055209 Cok Mar 2008 A1
20080055211 Ogawa Mar 2008 A1
20080074413 Ogura Mar 2008 A1
20080088549 Nathan Apr 2008 A1
20080088648 Nathan Apr 2008 A1
20080111766 Uchino May 2008 A1
20080116787 Hsu May 2008 A1
20080117144 Nakano et al. May 2008 A1
20080136770 Peker et al. Jun 2008 A1
20080150845 Ishii Jun 2008 A1
20080150847 Kim Jun 2008 A1
20080158115 Cordes Jul 2008 A1
20080158648 Cummings Jul 2008 A1
20080191976 Nathan Aug 2008 A1
20080198103 Toyomura Aug 2008 A1
20080211749 Weitbruch Sep 2008 A1
20080218451 Miyamoto Sep 2008 A1
20080231558 Naugler Sep 2008 A1
20080231562 Kwon Sep 2008 A1
20080231625 Minami Sep 2008 A1
20080246713 Lee Oct 2008 A1
20080252223 Toyoda Oct 2008 A1
20080252571 Hente Oct 2008 A1
20080259020 Fisekovic Oct 2008 A1
20080290805 Yamada Nov 2008 A1
20080297055 Miyake Dec 2008 A1
20090033598 Suh Feb 2009 A1
20090058772 Lee Mar 2009 A1
20090109142 Takahara Apr 2009 A1
20090121994 Miyata May 2009 A1
20090146926 Sung Jun 2009 A1
20090160743 Tomida Jun 2009 A1
20090174628 Wang Jul 2009 A1
20090184901 Kwon Jul 2009 A1
20090195483 Naugler, Jr. Aug 2009 A1
20090201281 Routley Aug 2009 A1
20090206764 Schemmann Aug 2009 A1
20090207160 Shirasaki et al. Aug 2009 A1
20090213046 Nam Aug 2009 A1
20090244046 Seto Oct 2009 A1
20090262047 Yamashita Oct 2009 A1
20100004891 Ahlers Jan 2010 A1
20100026725 Smith Feb 2010 A1
20100039422 Seto Feb 2010 A1
20100039458 Nathan Feb 2010 A1
20100045646 Kishi Feb 2010 A1
20100045650 Fish et al. Feb 2010 A1
20100060911 Marcu Mar 2010 A1
20100073335 Min Mar 2010 A1
20100073357 Min Mar 2010 A1
20100079419 Shibusawa Apr 2010 A1
20100085282 Yu Apr 2010 A1
20100103160 Jeon Apr 2010 A1
20100134469 Ogura et al. Jun 2010 A1
20100134475 Ogura et al. Jun 2010 A1
20100165002 Ahn Jul 2010 A1
20100194670 Cok Aug 2010 A1
20100207960 Kimpe Aug 2010 A1
20100225630 Levey Sep 2010 A1
20100251295 Amento Sep 2010 A1
20100277400 Jeong Nov 2010 A1
20100315319 Cok Dec 2010 A1
20110050870 Hanari Mar 2011 A1
20110063197 Chung Mar 2011 A1
20110069051 Nakamura Mar 2011 A1
20110069089 Kopf Mar 2011 A1
20110069096 Li Mar 2011 A1
20110074750 Leon Mar 2011 A1
20110074762 Shirasaki et al. Mar 2011 A1
20110109610 Yamamoto May 2011 A1
20110149166 Botzas Jun 2011 A1
20110169798 Lee Jul 2011 A1
20110175895 Hayakawa Jul 2011 A1
20110181630 Smith Jul 2011 A1
20110199395 Nathan Aug 2011 A1
20110227964 Chaji Sep 2011 A1
20110242074 Bert et al. Oct 2011 A1
20110273399 Lee Nov 2011 A1
20110279488 Nathan Nov 2011 A1
20110292006 Kim Dec 2011 A1
20110293480 Mueller Dec 2011 A1
20120056558 Toshiya Mar 2012 A1
20120062565 Fuchs Mar 2012 A1
20120262184 Shen Oct 2012 A1
20120299970 Bae Nov 2012 A1
20120299973 Jaffari Nov 2012 A1
20120299978 Chaji Nov 2012 A1
20130002527 Kim Jan 2013 A1
20130027381 Nathan Jan 2013 A1
20130057595 Nathan Mar 2013 A1
20130112960 Chaji May 2013 A1
20130135272 Park May 2013 A1
20130162617 Yoon Jun 2013 A1
20130201223 Li et al. Aug 2013 A1
20130241813 Tanaka Sep 2013 A1
20130309821 Yoo Nov 2013 A1
20130321671 Cote Dec 2013 A1
20140015824 Chaji et al. Jan 2014 A1
20140022289 Lee Jan 2014 A1
20140043316 Chaji et al. Feb 2014 A1
20140055500 Lai Feb 2014 A1
20140111567 Nathan et al. Apr 2014 A1
20160275860 Wu Sep 2016 A1
Foreign Referenced Citations (141)
Number Date Country
1 294 034 Jan 1992 CA
2 109 951 Nov 1992 CA
2 249 592 Jul 1998 CA
2 368 386 Sep 1999 CA
2 242 720 Jan 2000 CA
2 354 018 Jun 2000 CA
2 432 530 Jul 2002 CA
2 436 451 Aug 2002 CA
2 438 577 Aug 2002 CA
2 463 653 Jan 2004 CA
2 498 136 Mar 2004 CA
2 522 396 Nov 2004 CA
2 443 206 Mar 2005 CA
2 472 671 Dec 2005 CA
2 567 076 Jan 2006 CA
2526436 Feb 2006 CA
2 526 782 Apr 2006 CA
2 541 531 Jul 2006 CA
2 550 102 Apr 2008 CA
2 773 699 Oct 2013 CA
1381032 Nov 2002 CN
1448908 Oct 2003 CN
1623180 Jun 2005 CN
1682267 Oct 2005 CN
1758309 Apr 2006 CN
1760945 Apr 2006 CN
1886774 Dec 2006 CN
1897093 Jul 2007 CN
101194300 Jun 2008 CN
101449311 Jun 2009 CN
101615376 Dec 2009 CN
102656621 Sep 2012 CN
102725786 Oct 2012 CN
0 158 366 Oct 1985 EP
1 028 471 Aug 2000 EP
1 111 577 Jun 2001 EP
1 130 565 Sep 2001 EP
1 194 013 Apr 2002 EP
1 335 430 Aug 2003 EP
1 372 136 Dec 2003 EP
1 381 019 Jan 2004 EP
1 418 566 May 2004 EP
1 429 312 Jun 2004 EP
145 0341 Aug 2004 EP
1 465 143 Oct 2004 EP
1 469 448 Oct 2004 EP
1 521 203 Apr 2005 EP
1 594 347 Nov 2005 EP
1 784 055 May 2007 EP
1854338 Nov 2007 EP
1 879 169 Jan 2008 EP
1 879 172 Jan 2008 EP
2395499 Dec 2011 EP
2 389 951 Dec 2003 GB
1272298 Oct 1989 JP
4-042619 Feb 1992 JP
6-314977 Nov 1994 JP
8-340243 Dec 1996 JP
09-090405 Apr 1997 JP
10-254410 Sep 1998 JP
11-202295 Jul 1999 JP
11-219146 Aug 1999 JP
11 231805 Aug 1999 JP
11-282419 Oct 1999 JP
2000-056847 Feb 2000 JP
2000-81607 Mar 2000 JP
2001-134217 May 2001 JP
2001-195014 Jul 2001 JP
2002-055654 Feb 2002 JP
2002-91376 Mar 2002 JP
2002-514320 May 2002 JP
2002-229513 Aug 2002 JP
2002-278513 Sep 2002 JP
2002-333862 Nov 2002 JP
2003-076331 Mar 2003 JP
2003-124519 Apr 2003 JP
2003-177709 Jun 2003 JP
2003-271095 Sep 2003 JP
2003-308046 Oct 2003 JP
2003-317944 Nov 2003 JP
2004-004675 Jan 2004 JP
2004-045648 Feb 2004 JP
2004-145197 May 2004 JP
2004-287345 Oct 2004 JP
2005-057217 Mar 2005 JP
2007-065015 Mar 2007 JP
2007-155754 Jun 2007 JP
2008-102335 May 2008 JP
4-158570 Oct 2008 JP
2003-195813 Jul 2013 JP
2004-0100887 Dec 2004 KR
342486 Oct 1998 TW
473622 Jan 2002 TW
485337 May 2002 TW
502233 Sep 2002 TW
538650 Jun 2003 TW
1221268 Sep 2004 TW
1223092 Nov 2004 TW
200727247 Jul 2007 TW
WO 199848403 Oct 1998 WO
WO 199948079 Sep 1999 WO
WO 200106484 Jan 2001 WO
WO 200127910 Apr 2001 WO
WO 200163587 Aug 2001 WO
WO 2002067327 Aug 2002 WO
WO 2003001496 Jan 2003 WO
WO 2003034389 Apr 2003 WO
WO 2003058594 Jul 2003 WO
WO 2003063124 Jul 2003 WO
WO 2003077231 Sep 2003 WO
WO 2004003877 Jan 2004 WO
WO 2004025615 Mar 2004 WO
WO 2004034364 Apr 2004 WO
WO 2004047058 Jun 2004 WO
WO 2004066249 Aug 2004 WO
WO 2004104975 Dec 2004 WO
WO 2005022498 Mar 2005 WO
WO 2005022500 Mar 2005 WO
WO 2005029455 Mar 2005 WO
WO 2005029456 Mar 2005 WO
WO2005034072 Apr 2005 WO
WO 2005055185 Jun 2005 WO
WO 2006000101 Jan 2006 WO
WO 2006053424 May 2006 WO
WO 2006063448 Jun 2006 WO
WO 2006084360 Aug 2006 WO
WO 2007003877 Jan 2007 WO
WO 2007079572 Jul 2007 WO
WO 2007090287 Aug 2007 WO
WO 2007120849 Oct 2007 WO
WO 2009048618 Apr 2009 WO
WO 2009055920 May 2009 WO
WO 2010023270 Mar 2010 WO
WO 2010146707 Dec 2010 WO
WO 2011041224 Apr 2011 WO
WO 2011064761 Jun 2011 WO
WO 2011067729 Jun 2011 WO
WO 2012160424 Nov 2012 WO
WO 2012160471 Nov 2012 WO
WO 2012164474 Dec 2012 WO
WO 2012164475 Dec 2012 WO
Non-Patent Literature Citations (131)
Entry
Ahnood : “Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements”; dated Aug. 2009.
Alexander : “Pixel circuits and drive schemes for glass and elastic AMOLED displays”; dated Jul. 2005 (9 pages).
Alexander : “Unique Electrical Measurement Technology for Compensation, Inspection, and Process Diagnostics of AMOLED HDTV”; dated May 2010 (4 pages).
Ashtiani : “AMOLED Pixel Circuit With Electronic Compensation of Luminance Degradation”; dated Mar. 2007 (4 pages).
Chaji : “A Current-Mode Comparator for Digital Calibration of Amorphous Silicon AMOLED Displays”; dated Jul. 2008 (5 pages).
Chaji : “A fast settling current driver based on the CCII for AMOLED displays”; dated Dec. 2009 (6 pages).
Chaji : “A Low-Cost Stable Amorphous Silicon AMOLED Display with Full V˜I- and V˜O˜L˜E˜D Shift Compensation”; dated May 2007 (4 pages).
Chaji : “A low-power driving scheme for a-Si:H active-matrix organic light-emitting diode displays”; dated Jun. 2005 (4 pages).
Chaji : “A low-power high-performance digital circuit for deep submicron technologies”; dated Jun. 2005 (4 pages).
Chaji : “A novel a-Si:H AMOLED pixel circuit based on short-term stress stability of a-Si:H TFTs”; dated Oct. 2005 (3 pages).
Chaji : “A Novel Driving Scheme and Pixel Circuit for AMOLED Displays”; dated Jun. 2006 (4 pages).
Chaji : “A Novel Driving Scheme for High Resolution Large-area a-Si:H AMOLED displays”; dated Aug. 2005 (3 pages).
Chaji : “A Stable Voltage-Programmed Pixel Circuit for a-Si:H AMOLED Displays”; dated Dec. 2006 (12 pages).
Chaji : “A Sub-μA fast-settling current-programmed pixel circuit for AMOLED displays”; dated Sep. 2007.
Chaji : “An Enhanced and Simplified Optical Feedback Pixel Circuit for AMOLED Displays”; dated Oct. 2006.
Chaji : “Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices”; dated Aug. 2008.
Chaji : “Driving scheme for stable operation of 2-TFT a-Si AMOLED pixel”; dated Apr. 2005 (2 pages).
Chaji : “Dynamic-effect compensating technique for stable a-Si:H AMOLED displays”; dated Aug. 2005 (4 pages).
Chaji : “Electrical Compensation of OLED Luminance Degradation”; dated Dec. 2007 (3 pages).
Chaji : “eUTDSP: a design study of a new VLIW-based DSP architecture”; dated My 2003 (4 pages).
Chaji : “Fast and Offset-Leakage Insensitive Current-Mode Line Driver for Active Matrix Displays and Sensors”; dated Feb. 2009 (8 pages).
Chaji : “High Speed Low Power Adder Design With a New Logic Style: Pseudo Dynamic Logic (SDL)”; dated Oct. 2001 (4 pages).
Chaji : “High-precision, fast current source for large-area current-programmed a-Si flat panels”; dated Sep. 2006 (4 pages).
Chaji : “Low-Cost AMOLED Television with IGNIS Compensating Technology”; dated May 2008 (4 pages).
Chaji : “Low-Cost Stable a-Si:H AMOLED Display for Portable Applications”; dated Jun. 2006 (4 pages).
Chaji : “Low-Power Low-Cost Voltage-Programmed a-Si:H AMOLED Display”; dated Jun. 2008 (5 pages).
Chaji : “Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging”; dated Nov. 2008 (3 pages).
Chaji : “Parallel Addressing Scheme for Voltage-Programmed Active-Matrix OLED Displays”; dated May 2007 (6 pages).
Chaji : “Pseudo dynamic logic (SDL): a high-speed and low-power dynamic logic family”; dated 2002 (4 pages).
Chaji : “Stable a-Si:H circuits based on short-term stress stability of amorphous silicon thin film transistors”; dated May 2006 (4 pages).
Chaji : “Stable Pixel Circuit for Small-Area High-Resolution a-Si:H AMOLED Displays”; dated Oct. 2008 (6 pages).
Chaji : “Stable RGBW AMOLED display with OLED degradation compensation using electrical feedback”; dated Feb. 2010 (2 pages).
Chaji : “Thin-Film Transistor Integration for Biomedical Imaging and AMOLED Displays”; dated 2008 (177 pages).
European Search Report for Application No. EP 04 78 6661 dated Mar. 9, 2009.
European Search Report for Application No. EP 05 75 9141 dated Oct. 30, 2009 (2 pages).
European Search Report for Application No. EP 05 81 9617 dated Jan. 30, 2009.
European Search Report for Application No. EP 06 70 5133 dated Jul. 18, 2008.
European Search Report for Application No. EP 06 72 1798 dated Nov. 12, 2009 (2 pages).
European Search Report for Application No. EP 07 71 0608.6 dated Mar. 19, 2010 (7 pages).
European Search Report for Application No. EP 07 71 9579 dated May 20, 2009.
European Search Report for Application No. EP 07 81 5784 dated Jul. 20, 2010 (2 pages).
European Search Report for Application No. EP 10 16 6143, dated Sep. 3, 2010 (2 pages).
European Search Report for Application No. EP 10 83 4294.0/1903, dated Apr. 8, 2013, (9 pages).
European Supplementary Search Report for Application No. EP 04 78 6662 dated Jan. 19, 2007 (2 pages).
Extended European Search Report for Application No. 11 73 9485.8 dated Aug. 6, 2013 (14 pages).
Extended European Search Report for Application No. EP 09 73 3076.5, dated Apr. 27, (13 pages).
Extended European Search Report for Application No. EP 11 16 8677.0, dated Nov. 29, 2012, (13 page).
Extended European Search Report for Application No. EP 11 19 1641.7 dated Jul. 11, 2012 (14 pages).
Extended European Search Report for Application No. EP 10834297 dated Oct. 27, 2014 (6 pages).
Fossum, Eric R.. “Active Pixel Sensors: Are CCD's Dinosaurs?” SPIE: Symposium on Electronic Imaging. Feb. 1, 1993 (13 pages).
Goh , “A New a-Si:H Thin-Film Transistor Pixel Circuit for Active-Matrix Organic Light-Emitting Diodes”, IEEE Electron Device Letters, Vol, 24, No. 9, Sep. 2003, pp. 583-585.
International Preliminary Report on Patentability for Application No. PCT/CA2005/001007 dated Oct. 16, 2006, 4 pages.
International Search Report for Application No. PCT/CA2004/001741 dated Feb. 21, 2005.
International Search Report for Application No. PCT/CA2004/001742, Canadian Patent Office, dated Feb. 21, 2005 (2 pages).
International Search Report for Application No. PCT/CA2005/001007 dated Oct. 18, 2005.
International Search Report for Application No. PCT/CA2005/001897, dated Mar. 21, 2006 (2 pages).
International Search Report for Application No. PCT/CA2007/000652 dated Jul. 25, 2007.
International Search Report for Application No. PCT/CA2009/000501, dated Jul. 30, 2009 (4 pages).
International Search Report for Application No. PCT/CA2009/001769, dated Apr. 8, 2010 (3 pages).
International Search Report for Application No. PCT/IB2010/055481, dated Apr. 7, 2011, 3 pages.
International Search Report for Application No. PCT/IB2010/055486, dated Apr. 19, 2011, 5 pages.
International Search Report for Application No. PCT/IB2014/060959, dated Aug. 28, 2014, 5 pages.
International Search Report for Application No. PCT/IB2010/055541 filed Dec. 1, 2010, dated May 26, 2011; 5 pages.
International Search Report for Application No. PCT/IB2011/050502, dated Jun. 27, 2011 (6 pages).
International Search Report for Application No. PCT/IB2011/051103, dated Jul. 8, 2011, 3 pages.
International Search Report for Application No. PCT/IB2011/055135, Canadian Patent Office, dated Apr. 16, 2012 (5 pages).
International Search Report for Application No. PCT/IB2012/052372, dated Sep. 12, 2012 (3 pages).
International Search Report for Application No. PCT/IB2013/054251, Canadian Intellectual Property Office, dated Sep. 11, 2013; (4 pages).
International Search Report for Application No. PCT/JP02/09668, dated Dec. 3, 2002, (4 pages).
International Written Opinion for Application No. PCT/CA2004/001742, Canadian Patent Office, dated Feb. 21, 2005 (5 pages).
International Written Opinion for Application No. PCT/CA2005/001897, dated Mar. 21, 2006 (4 pages).
International Written Opinion for Application No. PCT/CA2009/000501 dated Jul. 30, 2009 (6 pages).
International Written Opinion for Application No. PCT/IB2010/055481, dated Apr. 7, 2011, 6 pages.
International Written Opinion for Application No. PCT/IB2010/055486, dated Apr. 19, 2011, 8 pages.
International Written Opinion for Application No. PCT/IB2010/055541, dated May 26, 2011; 6 pages.
International Written Opinion for Application No. PCT/IB2011/050502, dated Jun. 27, 2011 (7 pages).
International Written Opinion for Application No. PCT/IB2011/051103, dated Jul. 8, 2011, 6 pages.
International Written Opinion for Application No. PCT/IB2011/055135, Canadian Patent Office, dated Apr. 16, 2012 (5 pages).
International Written Opinion for Application No. PCT/IB2012/052372, dated Sep. 12, 2012 (6 pages).
International Written Opinion for Application No. PCT/IB2013/054251, Canadian Intellectual Property Office, dated Sep. 11, 2013; (5 pages).
Jafarabadiashtiani : “A New Driving Method for a-Si AMOLED Displays Based on Voltage Feedback”; dated 2005 (4 pages).
Kanicki, J., “Amorphous Silicon Thin-Film Transistors Based Active-Matrix Organic Light-Emitting Displays.” Asia Display: International Display Workshops, Sep. 2001 (pp. 315-318).
Karim, K. S., “Amorphous Silicon Active Pixel Sensor Readout Circuit for Digital Imaging.” IEEE: Transactions on Electron Devices. vol. 50, No. 1, Jan. 2003 (pp. 200-208).
Lee : “Ambipolar Thin-Film Transistors Fabricated by PECVD Nanocrystalline Silicon”; dated 2006.
Lee, Wonbok: “Thermal Management in Microprocessor Chips and Dynamic Backlight Control in Liquid Crystal Displays”, Ph.D. Dissertation, University of Southern California (124 pages).
Liu, P. et al., Innovative Voltage Driving Pixel Circuit Using Organic Thin-Film Transistor for AMOLEDs, Journal of Display Technology, vol. 5, Issue 6, Jun. 2009 (pp. 224-227).
Ma E Y: “organic light emitting diode/thin film transistor integration for foldable displays” dated Sep. 15, 1997(4 pages).
Matsueda y : “35.1: 2.5-in. AMOLED with Integrated 6-bit Gamma Compensated Digital Data Driver”; dated May 2004.
Mendes E., “A High Resolution Switch-Current Memory Base Cell.” IEEE: Circuits and Systems. vol. 2, Aug. 1999 (pp. 718-721).
Nathan A. , “Thin Film imaging technology on glass and plastic” ICM 2000, proceedings of the 12 international conference on microelectronics, dated Oct. 31, 2001 (4 pages).
Nathan , “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic”, IEEE Journal of Solid-State Circuits, vol. 39, No. 9, Sep. 2004, pp. 1477-1486.
Nathan : “Backplane Requirements for active Matrix Organic Light Emitting Diode Displays,”; dated 2006 (16 pages).
Nathan : “Call for papers second international workshop on compact thin-film transistor (TFT) modeling for circuit simulation”; dated Sep. 2009 (1 page).
Nathan : “Driving schemes for a-Si and LTPS AMOLED displays”; dated Dec. 2005 (11 pages).
Nathan : “Invited Paper: a-Si for AMOLED—Meeting the Performance and Cost Demands of Display Applications (Cell Phone to HDTV)”; dated 2006 (4 pages).
Office Action in Japanese patent application No. JP2012-541612 dated Jul. 15, 2014. (3 pages).
Partial European Search Report for Application No. EP 11 168 677.0, dated Sep. 22, 2011 (5 pages).
Partial European Search Report for Application No. EP 11 19 1641.7, dated Mar. 20, 2012 (8 pages).
Philipp: “Charge transfer sensing” Sensor Review, vol. 19, No. 2, Dec. 31, 1999 (Dec. 31, 1999), 10 pages.
Rafati : “Comparison of a 17 b multiplier in Dual-rail domino and in Dual-rail D L (D L) logic styles”; dated 2002 (4 pages).
Safavian : “3-TFT active pixel sensor with correlated double sampling readout circuit for real-time medical x-ray imaging”; dated Jun. 2006 (4 pages).
Safavian : “A novel current scaling active pixel sensor with correlated double sampling readout circuit for real time medical x-ray imaging”; dated May 2007 (7 pages).
Safavian : “A novel hybrid active-passive pixel with correlated double sampling CMOS readout circuit for medical x-ray imaging”; dated May 2008 (4 pages).
Safavian : “Self-compensated a-Si:H detector with current-mode readout circuit for digital X-ray fluoroscopy”; dated Aug. 2005 (4 pages).
Safavian : “TFT active image sensor with current-mode readout circuit for digital x-ray fluoroscopy [5969D-82]”; dated Sep. 2005 (9 pages).
Safavian : “Three-TFT image sensor for real-time digital X-ray imaging”; dated Feb. 2, 2006 (2 pages).
Singh, “Current Conveyor: Novel Universal Active Block”, Samriddhi, S-JPSET vol. I, Issue 1, 2010, pp. 41-48 (12EPPT).
Smith, Lindsay I., “A tutorial on Principal Components Analysis,” dated Feb. 26, 2001 (27 pages).
Spindler , System Considerations for RGBW OLED Displays, Journal of the SID 14/1, 2006, pp. 37-48.
Snorre Aunet: “switched capacitors circuits”, University of Oslo, Mar. 7, 2011 (Mar. 7, 2011), XP002729694, Retrieved from the Internet: URL:http://www.uio.no/studier/emner/matnat/ifi/INF4420/v1 1/undervisningsmateriale/INF4420_V11_0308_1.pdf [retrieved on Sep. 9, 2014].
Stewart M. , “polysilicon TFT technology for active matrix oled displays” IEEE transactions on electron devices, vol. 48, No. 5, dated May 2001 (7 pages).
Vygranenko : “Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition”; dated 2009.
Wang : “Indium oxides by reactive ion beam assisted evaporation: From material study to device application”; dated Mar. 2009 (6 pages).
Yi He , “Current-Source a-Si:H Thin Film Transistor Circuit for Active-Matrix Organic Light-Emitting Displays”, IEEE Electron Device Letters, vol. 21, No. 12, Dec. 2000, pp. 590-592.
Yu, Jennifer: “Improve OLED Technology for Display”, Ph.D. Dissertation, Massachusetts Institute of Technology, Sep. 2008 (151 pages).
International Search Report for Application No. PCT/IB2014/058244, Canadian Intellectual Property Office, dated Apr. 11, 2014; (6 pages).
International Search Report for Application No. PCT/IB2014/059753, Canadian Intellectual Property Office, dated Jun. 23, 2014; (6 pages).
Written Opinion for Application No. PCT/IB2014/059753, Canadian Intellectual Property Office, dated Jun. 12, 2014 (6 pages).
International Search Report for Application No. PCT/IB2014/060879, Canadian Intellectual Property Office, dated Jul. 17, 2014 (3 pages).
Extended European Search Report for Application No. EP 14158051.4, dated Jul. 29, 2014, (4 pages).
Office Action in Chinese Patent Invention No. 201180008188.9, dated Jun. 4, 2014 (17 pages).
International Search Report for Application No. PCT/IB/2014/066932 dated Mar. 24, 2015.
Written Opinion for Application No. PCT/IB/2014/066932 dated Mar. 24, 2015.
Extended European Search Report for Application No. EP 11866291.5, dated Mar. 9, 2015, (9 pages).
Extended European Search Report for Application No. EP 14181848.4, dated Mar. 5, 2015, (8 pages).
Office Action in Chinese Patent Invention No. 201280022957.5, dated Jun. 26, 2015 (7 pages).
Extended European Search Report for Application No. EP 13794695.0, dated Dec. 18, 2015, (9 pages).
Extended European Search Report for Application No. EP 16157746.5, dated Apr. 8, 2016, (11 pages).
Extended European Search Report for Application No. EP 16192749.6, dated Dec. 15, 2016, (17 pages).
International Search Report for Application No. PCT/IB/2016/054763 dated Nov. 25, 2016 (4 pages).
Written Opinion for Application No. PCT/IB/2016/054763 dated Nov. 25, 2016 (9 pages).
Related Publications (1)
Number Date Country
20180005559 A1 Jan 2018 US
Continuations (5)
Number Date Country
Parent 15420503 Jan 2017 US
Child 15708361 US
Parent 15154445 May 2016 US
Child 15420503 US
Parent 14680554 Apr 2015 US
Child 15154445 US
Parent 13950795 Jul 2013 US
Child 14680554 US
Parent 13112468 May 2011 US
Child 13950795 US