Patent Grant
12296408
The present disclosure relates to forming micro-holes, and in particular relates to systems for and methods of forming micro-holes in glass-based objects using an annular vortex laser beam.
Glass-based materials (e.g., glass, glass ceramics and crystals) are finding increasing use in commercial devices such as displays, televisions, laptop computers, GPS devices and smart phones. Glass-based materials have many physical properties relating to thermal expansion, electrical insulation, optical transmission, strength, chemical stability, and bonding ability (e.g., to silicon) that make them an excellent choice for combining with electrical and mechanical components of the particular commercial device. The glass-based materials can be used to define different types of device components, such as a cover screen or flat panel for a display, optical waveguides, optical interconnects, hybrid optical-electrical interconnects, etc.
The use of glass-based components in commercial devices often requires forming high-quality micro-holes in or through the component as part of the device manufacturing process. The micro-hole diameters can range from several microns to hundreds of microns while the micro-hole depth can range from tens of nanometers to several millimeters. The density of such micro-holes can range from a few to thousands per square centimeter. In the case where a relatively high density of micro-holes is required, the ability to form the micro-holes rapidly and with high accuracy and precision becomes important to ensure a satisfactory product throughput.
Aspects of the disclosure are directed to a micro-hole-forming system that includes a beam-forming system. The beam-forming system is configured to convert a conventional Gaussian laser beam (“Gaussian beam”) into a vortex laser beam having an annular cross-sectional shape (“profile”) and that has a larger depth of focus than the corresponding conventional Gaussian diffracted beam (e.g., from least 1.1× larger up to at least 2× larger or up to 3× larger or up to 5× larger or up to 10× larger by way of non-limiting examples). The vortex laser beam with the annular cross-section (“annular vortex beam”) is a non-diffracting light beam that has a topological charge m (integer) that defines an amount of rotation of the beam around its central axis as it propagates. The annular vortex beam is formed in a manner that gives it a relative large depth of focus as compared to a traditional Gaussian beam while also providing a larger diameter than the Bessel beam. The annular vortex beam is used to form micro-holes in a glass-based object using either a one-step or a two-step method. The micro-holes formed by either process can be closed ended (e.g., recesses) or open ended (through holes) depending on the given application.
In the one-step method, the annular vortex beam has sufficient energy (e.g., a peak intensity in the range from 110 TW/cm2 to 480 TW/cm2) to form a hollow cylindrical region in the body of the glass-based object via ablation of the glass-based material. The ablation process creates an annular gap or hole in the body of the glass-based object. In the case where the annular gap does not extend all the way through the body of the glass object (i.e., from a top surface to a bottom surface, or an outer surface to an inner surface, etc.), there is a central portion surrounded by the gap. In the case where the annular gap extends sufficiently far through the body of the glass-based object, the central portion is easily removed without any further substantial processing to form a through hole. In the case where the annular gap reaches the bottom surface, the central portion becomes disconnected from the rest of the body of the glass-based object and simply falls away or is readily removed.
Rather than forming an annular gap directly with the annular vortex beam in a single step, the two-step process relies on irradiating the glass-based object with the annular vortex beam to form a modified annular region within the body of the glass-based object. In an example, the glass material in the modified annular region is altered (e.g., damaged by densification) so that it etches preferentially relative to the untransformed (non-irradiated) portion of the body, such as the central portion or the portion of the body outside of the modified annular region. An etching process (e.g., acid etching) is then used to remove the modified region to form the micro-hole.
Compared to the one-step process, the two-step process generally uses a lower laser power and a shorter laser processing time, but uses an additional step. When the additional step comprises etching, it can have the added benefit of removing surface flaws and micro-cracks that may be induced by irradiation with the annular vortex beam. Both the one-step method and the two-step method can be used on a glass-based object (e.g., a panel) to form large numbers of micro-holes with a high throughput (e.g. 3000 micro-holes/second laser processing time for the two-step process followed by a 60 minute etch (etching done on all holes simultaneously), or 1 micro-hole/second laser processing time for the one-step process) without compromising the panel strength. The micro-holes can have diameters from tens of microns to hundreds of microns and through thicknesses up to several millimeters.
An embodiment of the disclosure is directed to a method of forming a micro-hole in a glass-based object having a body that defines opposite first and second surfaces. The method comprising: a) forming a phase device with a phase distribution defined by ϕPD(r,θ)=ϕ1(r,θ)+ϕ2(r,θ), wherein ϕ1(r,θ) is a first phase term equal to −k·r·sin (γ) and ϕ2(r,θ) is a second phase term equal to m·θ, where (r, θ) are polar radial and angular coordinates, γ is an axicon angle in the range 0.10°≤γ≤20°, and m is a topological charge in the range 3≤m≤20, where m is an integer; b) directing a Gaussian laser beam to the phase device to convert the Gaussian beam to an annular vortex beam having the phase distribution ϕPD(r,θ), a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF and having an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; c) directing the annular vortex beam to the first surface and through the body of the glass-based object, thereby irradiating an annular region of the body within the depth of focus to form an irradiated annular region, wherein said irradiating either: i) transforms the irradiated annular region to a modified annular region that etches preferentially as compared to a portion of the body that has not been irradiated by the annular vortex beam; ii) transforms a portion of the irradiated annular region into a closed-end annular micro-hole by ablating the portion of the irradiated annular region; or iii) transforms the irradiated annular region into a through micro-hole by ablating the irradiated annular region.
Another embodiment of the disclosure is directed to a method of forming a micro-hole in a glass-based object having a body that defines opposite first and second surfaces. The methods comprises: a) forming an annular vortex beam having a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF, wherein the focus ring has an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; b) directing the annular vortex beam to the first surface and through the body of the glass-based object, thereby irradiating an annular region of the body to transform the annular region to modified annular region that etches preferentially as compared to a portion of the body that has not been irradiated by the annular vortex beam; and c) etching the glass-based object to remove the modified annular region to form the micro-hole.
Another embodiment of the disclosure is directed to a method of forming a micro-hole in a glass-based object having a body that defines opposite first and second surfaces. The method comprises: a) forming an annular vortex beam having a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF, wherein the focus ring has an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; and b) directing the annular vortex beam to the first surface and into the body of the glass-based object and either: i) ablating an annular portion of the body from the first surface but not reaching the second surface to form the micro-hole in the form of a closed annular micro-hole having a central portion; or ii) ablating an annular portion of the body from the first surface to the second surface to form the micro-hole as a substantially cylindrical through micro-hole.
Another embodiment of the disclosure is directed to a system for forming a micro-hole in a glass-based object having a body that defines opposite first and second surfaces. The system comprises: a) a laser source configured to generate a Gaussian laser beam; b) an optical system operably disposed to receive and process the Gaussian laser beam, the optical system including a phase device configured with a phase distribution ϕPD(r,θ)=ϕ1(r,θ)+ϕ2(r,θ), wherein ϕ1(r,θ) is a first phase term equal to −k·r·sin (γ) and ϕ2(r,θ) is a second phase term equal to m·θ, where (r, θ) are polar radial and angular coordinates, γ is an axicon angle in the range 0.01°≤γ≤20°, and m is a topological charge in the range 3≤m≤20, where m is an integer; c) wherein the Gaussian laser beam is processed by the optical system and the phase device therein to convert the Gaussian laser beam to an annular vortex beam that exits the optical system along a system axis, the annular vortex beam having the phase distribution ϕPD(r,θ), a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF and having an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; and d) a support stage configured to operably support the glass-based object relative to the annular vortex beam so that the annular vortex beam travels through the first surface and through the body of the glass-based object, thereby irradiating an annular region of the body within the depth of focus to form an irradiated annular region, wherein said irradiating either: i) transforms the irradiated annular region to a modified annular region that etches preferentially as compared to a portion of the body that has not been irradiated by the annular vortex beam; ii) transforms a portion of the irradiated annular region into a closed-end annular micro-hole by ablating the portion of the irradiated annular region; or iii) transforms the irradiated annular region into a through micro-hole by ablating the irradiated annular region.
Another embodiment of the disclosure is directed to a glass-based product formed by a process on a glass-based object having a body that defines opposite first and second surfaces. The process used to form the glass-based product comprises: a) forming a phase device with a phase distribution ϕPD(r,θ)=ϕ1(r,θ)+ϕ2(r,θ), wherein ϕ1(r,θ) is a first phase term equal to −k·r·sin (γ) and ϕ2(r,θ) is a second phase term equal to m·θ, where (r, θ) are polar radial and angular coordinates, γ is an axicon angle in the range 0.10°≤γ≤20°, and m is a topological charge in the range 3≤m≤20, where m is an integer; b) directing a Gaussian laser beam to the phase device to convert the Gaussian beam to an annular vortex beam having the phase distribution ϕPD(r,θ), a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF and having an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; c) directing the annular vortex beam to the first surface and through the body of the glass-based object, thereby irradiating a first annular region of the body within the depth of focus to form a first irradiated annular region, wherein said irradiating transforms the first irradiated annular region to a first modified annular region that etches preferentially as compared to a portion of the body that has not been irradiated by the annular vortex beam; and d) etching the first modified annular region to form an annular micro-hole in the body of the glass-based object.
Another embodiment of the disclosure is directed to the product-by-process described immediately above, wherein said irradiating includes forming a second irradiated annular region outside of and concentric with the first irradiated annular region so that said etching forms an annular recess surrounding the annular micro-hole.
Another embodiment of the disclosure is directed to a glass-based product formed by a process on a glass-based object having a body that defines opposite first and second surfaces. The process used to form the glass-based product comprises: a) forming a phase device with a phase distribution ϕPD(r,θ)=ϕ1(r,θ)+ϕ2(r,θ), wherein ϕ1(r,θ) is a first phase term equal to −k·r·sin (γ) and ϕ2(r,θ) is a second phase term equal to m·θ, where (r, θ) are polar radial and angular coordinates, γ is an axicon angle in the range 0.10°≤γ≤20°, and m is a topological charge in the range 3≤m≤20, where m is an integer; b) directing a Gaussian laser beam to the phase device to convert the Gaussian beam to an annular vortex beam having the phase distribution ϕPD(r,θ), a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF and having an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; and c) directing the annular vortex beam to the first surface and through the body of the glass-based object, thereby irradiating a first annular region of the body within the depth of focus to form a first irradiated annular region, wherein said irradiating transforms a portion of the irradiated annular region into a closed-end annular micro-hole by ablating the portion of the first irradiated annular region.
Another embodiment of the disclosure is directed to the product-by-process described immediately above, wherein said irradiating includes irradiating a second irradiated annular region outside of and concentric with the first irradiated annular region, wherein said irradiating of the second irradiated annular region ablates a portion of the first irradiated annular region to form an annular recess surrounding the annular micro-hole.
Another embodiment of the disclosure is directed to a glass-based product formed by a process on a glass-based object having a body that defines opposite first and second surfaces. The process used to form the glass-based product comprises: a) forming a phase device with a phase distribution ϕPD(r,θ)=ϕ1(r,θ)+ϕ2(r,θ), wherein ϕ1(r,θ) is a first phase term equal to −k·r·sin (γ) and ϕ2(r,θ) is a second phase term equal to m·θ, where (r, θ) are polar radial and angular coordinates, γ is an axicon angle in the range 0.10°≤γ≤20°, and m is a topological charge in the range 3≤m≤20, where m is an integer; b) directing a Gaussian laser beam to the phase device to convert the Gaussian beam to an annular vortex beam having the phase distribution ϕPD(r,θ), a depth of focus DOF, a wavelength λ and a focus ring within the depth of focus DOF and having an inner diameter D1, an outer diameter D2, and a width WA=(D2−D1)/2; and c) directing the annular vortex beam to the first surface and through the body of the glass-based object, thereby irradiating a first and second concentric annular regions of the body within the depth of focus to form first and second irradiated annular regions, wherein said irradiating transforms the first irradiated annular region into a through micro-hole by ablating the first irradiated annular region and transforms the second irradiated annular region into an annular recess that surrounds the through micro-hole.
Additional features and advantages are set forth in the Detailed Description that follows, and in part will be apparent to those skilled in the art from the description or recognized by practicing the embodiments as described in the written description and claims hereof, as well as the appended drawings. It is to be understood that both the foregoing general description and the following Detailed Description are merely exemplary, and are intended to provide an overview or framework to understand the nature and character of the claims.
The accompanying drawings are included to provide a further understanding, and are incorporated in and constitute a part of this specification. The drawings illustrate one or more embodiment(s), and together with the Detailed Description serve to explain principles and operation of the various embodiments. As such, the disclosure will become more fully understood from the following Detailed Description, taken in conjunction with the accompanying Figures, in which:
Reference is now made in detail to various embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same or like reference numbers and symbols are used throughout the drawings to refer to the same or like parts. The drawings are not necessarily to scale, and one skilled in the art will recognize where the drawings have been simplified to illustrate the key aspects of the disclosure.
The claims as set forth below are incorporated into and constitute part of this Detailed Description.
Coordinates (e.g., polar coordinates (r,θ) and Cartesian coordinates) are shown in some of the Figures for the sake of reference and are not intended to be limiting as to direction or orientation. The polar coordinates (r,θ) reside in the (x,y) plane as is conventional in the art.
The terms “downstream” and “upstream” are used to describe the relative locations of components or objects A and B relative to the direction of travel of light, wherein B being downstream of A means that the light moves in the direction from A to B and is incident upon A before being incident upon B.
The term “glass-based” is used herein to include any object made wholly or partly of glass, glass ceramic (including an amorphous phase and a crystalline phase) and crystalline materials.
The final glass-based objects as formed using the systems and methods described herein constitute a glass-based products or glass-based articles.
The phrase “P comprises Q” and like phrases use used herein is meant to include as a special case “P consists of Q.”
The abbreviation “μm” means “micron” or micrometer, which is 10−6 meter.
The abbreviation “nm” means “nanometer,” which is 10−9 meter.
The acronym “TW” stands for “terrawatts” or 1012 Watts.
Beam-Forming System
The example beam-forming system 10B of
The beam-forming system 10B also includes first and second spaced apart positive lenses L1 and L2 having respective focal lengths f1 and f2. In an example, f1=f2=f, and lens L2 is spaced apart a distance 2f from the focal point F1 of lens L1. A phase element 50 is disposed along the optical axis AX between the first and second lenses L1 and L2, e.g., at a distance f from lens L2 so that the second lens L2 constitutes a Fourier lens with respect to the phase element 50. Additionally, the lenses L1 and L2 may be placed at a distance f1+f2 from each other in a Fourier arrangement with respect to the axicon lens 30. The axicon lens 30, the lens elements L1 and L2 and the phase element 50 constitute an example optical system 80. The axicon lens 30 and the phase element 50 constitute an example of a phase device 60. Other configurations for the phase device 60 are discussed below.
The phase device 60 has an overall phase distribution ϕPD(r,θ) while the phase element 50 has a phase distribution ϕPE(r,θ). In an example, the phase element 50 comprises a phase plate. The phase element 50 can also comprise an active phase element (such as a spatial light modulator (SLM), or a deformable mirror), which in an example is reflective and folds the optical axis AX. In an example, the phase element 50 can comprise both a phase plate and an active phase element, or SLM, as illustrated in the example of
The beam-forming system 10B has a focal plane FP located a distance df from lens L2.
The annular vortex beam 22A is a substantially non-diffractive beam whose behavior at the focal plane FP differs from a conventional diffracted beam. The depiction of the annular vortex beam 22A in
With reference again to
The annular focus ring FR has an outer diameter D2 and an inner diameter D1, and an annular width WA. In an example, the outer diameter D2 can range from 5 μm to 60 μm while the annular width WA can range from 2 μm to 9 μm.
The annular focus ring FR can vary slightly in size within the depth of focus DOF. Generally, the depth of focus DOF of a non-diffracting beam such as a vortex beam is defined by the region through which the beam's maximum intensity stays above a certain intensity threshold value or intensity threshold percentage of the maximum intensity value. For example, the depth of focus DOF of the annular vortex beam 22A can be defined as an axial region where the maximum beam intensity does not fall below 25% of the maximum intensity of the annular vortex beam. Alternatively, the depth of focus can be defined as an axial region where the maximum intensity does not fall below a threshold intensity required for material ablation or material modification of the object 100, as discussed below.
In the embodiment of
The method of operation of the beam-forming system 10B of
Example Glass-Based Object and Support Stage
The micro-hole-forming system 10M includes a main controller 90 operably connected to the optical system 80 and to the stage controller 210. The main controller 90 is configured to control the overall operation of the micro-hole-forming system 10M. In an example where the phase device 60 comprises an active phase element APE, the main controller 90 can be connected to the APE controller (
Beam Formation Simulations and Experimental Results
The phase distribution ϕPD(r,θ) of the phase device 60 can be expressed as
ϕPD(r,θ)=ϕ1(r,θ)+ϕ2(r,θ)=−k·r·sin(γ)+m·θ [Equation 1]
where ϕ1(r,θ) is a first phase term and is equal to =−k·r·sin (γ) and ϕ2(r,θ) is a second phase term equal to m·θ, where k is the wave vector in a vacuum, r is the radial polar coordinate, θ is the angular polar coordinate, γ is the aforementioned axicon angle and m is the Bessel order or the topological charge, which is an integer and in an example can be in the range 3≤m≤20. The first phase term ϕ1(r,θ) in the Equation 1 is the phase distribution associated with the axicon lens 30 that creates a hollow beam 22H, while the second phase term ϕ2(r,θ) is the azimuthal phase distribution that gives the annular vortex beam its vortex property.
In one example such as shown in
Because an axicon lens 30 has a simple conic configuration, it may be preferred in some embodiments to use the embodiment of the beam-shaping system 10B of
Simulations of the operation of the beam-forming system 10B and the formation of the annular vortex beam 22A were carried out using computer modeling using to guide micro-hole fabrication experiments. Fourier-transform-based beam propagation simulations were carried out using math-based software (Python™ software from the Python Software Foundation, and MATLAB® software from Mathworks, Inc., Natick, Massachussetts), along with using raytracing software (OpticsStudio® lens design software from Zemax LLC, Kirkland, Washington) as a guide to determine approximate beam diameters.
In some cases, it may be desirable to adjust the diameter D2 of the focus ring FR formed by the annular vortex beam 22A. In examples, this can be done by swapping the focusing lens L2 with another focusing lens L2 having a different focal length, or by changing the phase distribution ϕPE(r,θ) of the phase element 50. When replacing the focusing lens L2, it may be necessary to change the first lens L1 and reposition the new second lens L2 or both of lenses L1 and L2. When changing the phase element 50, there is generally no need to reconfigure (e.g., reposition) the other components in the beam-forming system 10B.
In an example, the diameter D2 of the focus ring FR can be increased by increasing the value of the topological charge m used to define the phase distribution ϕPE(r,θ) of the phase element 50.
The ability to change the diameter of the focus ring FR by changing the phase distribution ϕPE(r,θ) of the phase element 50 without adjusting the other beam-forming system parameters or components is advantageous for a flexible manufacturing system in which there is some amount of flexibility that allows the system to react in case of changes, whether predicted or unpredicted. As a result, a variety of objects 10 can be processed with a single micro-hole-forming system 10M.
Note that the simulated images A through D of
Forming Micro-Holes
An aspect of the disclosure is directed to using the micro-hole-forming system 10M of
One-Step Method
The ablation process initially forms a closed-end annular micro-hole 220A, as shown in the close-up x-z cross-sectional view of
This one-step micro-hole-forming process can be repeated at other locations of the object 100 (e.g., by the controlled movement of the movable stage 200) to form an array of annular micro-holes (see
In another example, the annular vortex beam 22A continues to irradiate the sample 10 so that the irradiated portion of the body 101 continues to be ablated, thereby causing the annular hole 220 to deepen (i.e., the micro-hole depth DH increases) towards the back surface 104 of the object 100, as illustrated by the growth arrows AG. This process continues until the annular micro-hole 220A reaches the back surface 104, as shown in
The stacking embodiment of the method can be used to increase throughput of processed objects 100. The stacking embodiment is made possible due to the extremely large (long) depth of focus DOF, e.g., between 2 mm and 40 mm. This allows for the annular vortex beam 22A to form relatively uniform micro-holes 220 over multiple stacked objects 100. For example, for a depth of focus DOF of 2.5 mm, the stacking embodiment can accommodate four layers of objects 100 in the form of planar sheets each having a thickness of 0.6 mm. This results in a 4× increase in throughput as compared to processing a single planar sheet of thickness TH of 0.6 mm.
Two-Step Method
With reference to
As with the single-step method, the stacking embodiment can be used in the two-step method. In one example, the annular modified regions 111 are formed in the stacked configuration and the etching process 250 is also carried out in the stacked configuration. In another example, the stack can be separated into single objects 100 and then the etching process 250 carried out separately on each object.
Micro-Hole Array
Examples of Micro-Hole Formation
Experiments for micro-hole formation were carried out on select types of glass objects 100 using the beam-forming system 10B of
The benefit of using an active phase element such as an SLM to form the phase device 60 is the ability to perform different experiments by testing several combinations of axicon angle γ and topological charge without the need to swap out the other optics components within the beam-forming system.
In one experiment, the object 100 was an alkaline earth boro-aluminosilicate fusion-drawn glass sheet of the type used for active-matrix flat panel displays. The glass sheet has a thickness TH of 0.7 mm. The glass sheet was irradiated with annular vortex beams 22A having different amounts of power. The irradiated glass sheet was analyzed and it was found that laser powers in the range from 1500 milliwatts to 6000 milliwatts and the SLM-based phase device 60 programmed with an axicon angle γ of 0.01° and a topological charge of m=5 formed annular modified regions 111 suitable for etching to form micro-holes 220 in accordance with the two-step process described above.
Once the basic laser and phase device parameters for achieving material modification of the glass sheet were determined, an example beam-forming system 10B of
In an example, the depth of focus DOF can be determined by collecting a series of images of the actual annular vortex beam 22A at incremental steps in the direction of the propagation of the annular vortex beam to obtain beam intensity profiles at different axial positions and then stitching the images together to obtain a beam intensity profile in the propagation direction. The portion of the beam intensity profile with the highest intensity (e.g., above a select intensity threshold) defines the depth of focus DOF.
The depth of focus DOF can also be assessed by irradiating an object 100 with the annular vortex beam 22A and axially moving the object (or the beam-forming system 10B) to change the position of the object relative to the focal plane FP of the beam-forming system while monitoring the formation of a plasma on the object. The formation of a plasma is an indicator of micro-hole formation, so that the depth of focus DOF can be defined as the distance over which micro-hole formation occurs or equivalently the distance over which plasma formation occurs. As noted above, the depth of focus DOF can be adjusted by changing at least one of the input beam diameter, the axicon angle γ and the focal lengths of the lenses L1 and/or L2.
Additional simulations were performed for the example beam-forming system 10B where the topological charge was increased from m=3 to m=6, while the lenses L1 and L2 of the optical system 80 had respective focal lengths of f1=52 mm and f2=26 mm to provide a 50% demagnification to maintain the diameter D2 of the focus ring FR at 25 μm. The result was that the depth of focus DOF was 10 mm (a 4× reduction from the m=3 case), while the intensity of the focus ring FR increased by 4×.
To determine how much laser exposure is required to form micro-holes, an experiment was performed in which a sample of Gorilla® Glass (available from Corning, Inc., Corning, New York) having a thickness TH of 0.7 mm thick was tested using a 6000 mW, 1 ps, 3 kHz Gaussian laser beam. Laser damage was shown to occur when exposed to a range of 1000 shots (333 ms) to 50,000 shots (16.67 s).
In another experiment, a 25 mm long by 25 mm wide sample of an alkaline earth boro-aluminosilicate fusion-drawn glass sheet of thickness TH=0.7 mm was exposed to laser beams having various laser parameters, such as frequencies of 3 kHz and 200 kHz, laser power in the range from 1500 mW to 5500 mW, exposure times of 30 s to 120 s, and pulse widths of 256 fs to 10 ps. The irradiated glass sheet was then etched with an acid solution of 10% HF, 15% Nitric Acid, 75% water (by volume). After 90 minutes of static etching, through micro-holes were formed. After another 30 minutes of etching with ultrasonic assist, through micro-holes 50 μm in diameter were formed using 60 s and 120 s laser exposure times.
The nominal etch rate for the above-described etchant solution was measured at 1.6 μm/min, resulting in an expected etch of 192 μm in 120 minutes. This etch rate was observed in the thickness direction with a final thickness of about 0.5 mm. The surface hole diameter was approximately 170 μm, with the through hole diameter approximately 75 μm, which are lower than the nominal etch rate due to the impedance of waste material in the hole region during etching.
Advantages
The systems and methods disclosed herein have a number of advantages. These include a relatively large depth of focus DOF, e.g., from 2 mm to 40 mm, so that there is no need for beam refocusing for forming micro-holes with depths of up to about 2 mm in glass-based objects. In addition, relatively thick objects can be processed, and in some examples, the multiple of objects can be stacked and then processed in the stacked configuration.
Another advantage is the ability to use either a one-step process or a two-step process, depending on the amount of laser power available and the power density of the focus ring. Forming a modified region in the body of the object and then etching the object to form the micro-hole(s) allows for only having to remove an annular-shaped section of the object body that has been irradiated. The preferential etching properties of the modified region makes the etching step relatively fast (e.g., 10×-1000× faster) as compared to conventional methods of forming micro-holes using an etch process.
Another advantage is that changing the size of the focus ring can be accomplished by replacing the phase element, which in one example can involve swapping one phase plate for another and in another example can involve reprogramming an active phase element. This flexibility is particularly advantageous in manufacturing since changes to the beam-forming system can be made quickly.
It will be apparent to those skilled in the art that various modifications to the preferred embodiments of the disclosure as described herein can be made without departing from the spirit or scope of the disclosure as defined in the appended claims. Thus, the disclosure covers the modifications and variations provided they come within the scope of the appended claims and the equivalents thereto.
This application claims the benefit of priority under 35 U.S.C. § 371 of International Application No. PCT/US2020/020629, filed on Mar. 2, 2020, which claims the benefit of priority under 35 U.S.C. § 119 if U.S. Provisional Application No. 62/821,667, filed Mar. 21, 2019, the content of which is incorporated herein by reference in its entirety.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/US2020/020629 | 3/2/2020 | WO |
| Publishing Document | Publishing Date | Country | Kind |
|---|---|---|---|
| WO2020/190489 | 9/24/2020 | WO | A |
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