Patent Application
20160104580
This invention relates to a Ta powder used in an anodic electrode (anode) of a small-size, large-capacity tantalum solid electrolytic capacitor, which is mainly used in electronic devices such as personal computers, mobile phones and so on, a method of producing the same as well as a Ta granulated powder obtained by granulating the Ta powder.
The capacitor is a type of electronic parts used in the electronic devices such as personal computers, mobile phones and so on, and has a structure that a dielectric body is basically sandwiched between two opposed electrode plates. When a direct current voltage is applied to the capacitor, electric charges are stored in the respective electrodes by a polarizing action of the dielectric body. As the capacitor, there are a number of different ones. Among them, an aluminum electrolytic capacitor, a laminated ceramic capacitor, a tantalum electrolytic capacitor and a film capacitor are mainly used at the present day.
As the capacitor, small-size and high-capacity ones are recently used in association with reduction in size and weight and high functionalization of the electronic devices. Therefore, tantalum solid electrolytic capacitors (hereinafter referred to as “Ta capacitor” simply) are used because they are somewhat expensive but are small in the size and large in the capacity and have excellent properties such as good high-frequency property, stability to voltage and temperature, long service life and so on.
The Ta capacitor utilizes a fact that tantalum pentoxide (Ta2O5) as an anodic oxide film of Ta is excellent as a dielectric body, and is common to be produced by a process of compression-shaping a Ta powder as an anode material and sintering under a high vacuum to form a porous element, subjecting to a chemical conversion treatment (anodizing treatment) to form an oxide film (amorphous Ta2O5 film) having excellent corrosion resistance and insulation properties or a dielectric film on the surface of the Ta powder as an anode, impregnating a solution of manganese nitrate into the porous element, performing heat decomposition to form MnO2 layer (electrolyte) on the anodic oxide film as a cathode, forming lead wires connecting the electrodes with graphite, silver paste or the like and packaging them with a resin or the like. Recently, ones having improved high-frequency properties or high-current characteristics are developed and put into practical use by using a high-conductive polymer material such as polypyrrole, polyaniline or the like instead of MnO2.
As an indicator evaluating electric characteristics of tantalum powder for a capacitor is generally used a CV value (μF·V/g). At the moment, the CV value of the commercially available Ta powder is generally about 50˜100 kCV, and about 100˜200 kCV even in a high-capacity product. To this end, it is strongly desired to develop tantalum powder for a capacitor having a higher CV value, preferably not less than 220 kCV.
An accumulable charge capacity C of the capacity per unit voltage is expressed by the following equation:
C=(∈·S)/t
wherein S is an electrode area (m2), t is a distance between electrodes (m), ∈ is a dielectric constant (F/m), ∈=∈S·∈0, and ∈S is a relative permittivity of a dielectric body (oxide film of Ta: about 27) and ∈0 is a vacuum dielectric constant (8.855×10−12 F/m). It becomes larger as the electrode area S becomes large or the distance t between electrodes becomes small or the dielectric constant s becomes high. In order to increase the CV value, therefore, it is effective to increase the anode area S or a surface area of Ta powder constituting the anode or to decrease the distance t between electrodes or a thickness of anodic oxide film Ta2O5.
In order to increase the surface area of Ta powder, it is effective to make a primary particle size of Ta powder small. Therefore, miniaturization in the primary particle size of Ta powder is progressed in association with the increase of capacity in recent years. However, as the primary particle size is made small, a bonded portion of metal particles (necked portion) becomes small, so that there is a problem that the bonding of mutual metal particles is broken by an oxide film through chemical conversion treatment to cause reduction of electrostatic capacity. Also, the miniaturization of primary particles brings about the increase of an amount of a gaseous ingredient such as oxygen, nitrogen, hydrogen or the like adsorbed on the surface or the other impurity ingredient, which adversely affects characteristics as a capacitor. Therefore, the Ta powder is desirable to have a size of a certain scale, concretely not less than 30 nm.
As a method of industrially producing a Ta powder used for a Ta capacitor are currently known a Na reduction method wherein K2TaF7 is reduced with Na (Patent Document 1), a Mg reduction method wherein Ta2O5 is reduced with Mg (Patent Document 2), a grinding method wherein a Ta ingot is ground by hydrogenation (Patent Document 3), a thermal CVD method (vapor-phase reduction method) wherein TaCl5 is vaporized and reduced with H2 (Patent Documents 4, 5) and so on. The thermal CVD method disclosed in Patent Documents 4 and 5 has a merit of easily providing fine Ta powder, but has a problem that it is difficult to control the particle size or crystallinity or impurity level and hence a large amount of impurities is obtained. In the thermal CVD method, only powder having a finer particle size (primary particles) is obtained, so that there is a problem that the fluidity is bad (for example, Patent Document 6). In view of the above situation, most of Ta powder for a capacitor currently used is produced by the Na reduction method. In this Na reduction method, however, there is a problem that it is difficult to efficiently produce high-capacity fine Ta powder.
The thickness of the anodic oxide film is adjusted by a voltage in chemical conversion treatment. However, the thinning of the thickness causes various problems. For instance, native crystalline oxide film of several nm formed in the production of the powder is existent on the surface of the Ta powder. This oxide film deteriorates the electrical characteristics because it frequently contains a large amount of impurities and is poor in the quality as a dielectric layer or the adhesion property, but when the chemical conversion treatment is performed with a high voltage, the oxide film does not becomes particularly problematic because it is embedded in the thick anodic oxide film. However, as the thickness of the anodic oxide film is thinned due to the lowering of the voltage in the chemical conversion treatment, the crystalline oxide film is exposed to the surface. Furthermore, the decrease of the thickness of the oxide film exposes impurities adsorbed on the surface of the powder and defects of the film resulted therefrom. As a result, leakage current (LC) is increased and harmful influence is exerted on the service life of the capacitor. To this end, there is a limit in the increase of capacity by thinning the thickness of the anodic oxide film Ta2O5, so that it is important to improve the properties of the oxide film.
As a crystal phase of metallic Ta, there are α-phase and β-phase. The α-phase is called as α-Ta and is a cubic system and has a low specific resistance of about 20 μΩcm. On the other hand, the β-phase is called as β-Ta and is a tetragonal system and has a slightly higher specific resistance of about 170 μΩcm. A bulk metal of Ta inclusive of Ta powder is commonly α-Ta, while β-Ta is known to be existent as only a metal thin film formed by sputtering, and there is no report on powder thereof. However, it is known that when anodizing treatment is performed on the thin film to form a capacitor, β-Ta exhibits better oxide film properties or good capacitor properties (see, for example, Patent Document 7).
Patent Document 1: JP-A-2002-206105
Patent Document 2: JP-A-2002-544375
Patent Document 3: JP-A-H02-310301
Patent Document 4: JP-A-S64-073009
Patent Document 5: JP-A-H06-025701
Patent Document 6: JP-A-2007-335883
Patent Document 7: JP-A-2002-134358
Therefore, it is considered that β-Ta of tetragonal system is preferable as tantalum powder used in the anode for attaining the increase of CV in tantalum solid electrolytic capacitors and the decrease of leakage current. However, only a Ta powder comprised of α-Ta is obtained by the thermal CVD method or Na reduction method of the conventional technique, whereas there is no report on the production method of a Ta powder comprised of β-Ta crystal phase or including β-Ta crystal phase at the present time.
It is, therefore, an object of the invention to provide a Ta powder comprised of β-Ta crystal phase or including β-Ta phase, which is preferably used in a tantalum solid electrolytic capacitor, and a method of producing the Ta powder. It is another object of the invention to provide a Ta granulated powder obtained by improving fluidity of the Ta powder.
The inventors have focused attention on an influence of production conditions upon particle size and crystal structure of a Ta powder under basic ideas that it is important to control particle size of Ta powder (primary particles) to an adequate range and improve properties of an oxide film for increasing a CV value of a Ta capacitor and that a Ta powder including β-Ta phase is obtained by thermal CVD method (vapor-phase reduction method) close to the film formation technique by sputtering, and have made various studies. As a result, it has been found that a Ta powder comprised of a single phase of β-Ta or a mixed phase of β-Ta and α-Ta can be obtained and also a particle size thereof can be controlled to an adequate range by controlling a feeding rate of a raw material gas (TaCl5 vapor) to a reduction reaction field in thermal CVD method (vapor-phase reduction method), a residence time of the raw material gas in the reduction reaction field and a temperature of the reduction reaction field to an adequate range, respectively. Furthermore, it has been found that it is important to granulate the Ta powder to control particle size and bulk density to adequate ranges for improving fluidity of fine Ta powder, and as a result, the invention has been accomplished.
The invention based on the above knowledge is a Ta powder characterized by comprising a single phase of β-Ta of tetragonal system or a mixed phase of β-Ta of tetragonal system and α-Ta of cubic system and having an average particle size of 30˜150 nm
The Ta powder according to the invention is characterized by having a CV value (μF·V/g) of not less than 220 kCV.
Also, the invention proposes a method of producing a Ta powder by vaporizing TaCl5 as a raw material through heating, feeding to a reduction reaction field together with a carrier gas and reducing the TaCl5 vapor with H2 gas in the reduction reaction field to form Ta powder according to claim 1 or 2, characterized in that a feeding rate of the TaCl5 vapor to the reduction reaction field is 0.05˜5.0 g/cm2·min and a residence time of the TaCl5 vapor in the reduction reaction field is 0.1˜5 seconds, and the TaCl5 vapor is reduced at a temperature of 1100˜1600° C.
Furthermore, the invention is a Ta granulated powder formed by granulating the aforementioned Ta powder and characterized by having a median diameter on a volume basis of 10˜500 μm, a bulk density of 2.0˜5.0 g/cm3 and a fluidity of 1˜5 g/sec as measured with a funnel having an orifice diameter of 2.63 mm.
The Ta granulated powder according to the invention is characterized in that it is used in an electrode of a tantalum solid electrolytic capacitor.
According to the invention, a Ta powder comprised of a single phase of β-Ta or a mixed phase of β-Ta and α-Ta and having an average particle size of 30˜150 nm can be produced stably, so that it is possible to stably provide a tantalum solid electrolytic capacitor improving electrical characteristics of anodic oxide film formed by chemical conversion treatment and having a high electrostatic capacity of not less than 220 k as a CV value.
A Ta powder used in a tantalum solid electrolytic capacitor according to the invention is a Ta powder produced by a thermal CVD method (vapor-phase reduction method) of reducing vapor of Ta chloride (TaCl5) with H2 gas, which is necessary to be comprised of a single phase of β-Ta of tetragonal system or a mixed phase of β-Ta of tetragonal system and α-Ta of cubic system and have an average particle size of 30˜150 nm. The reason for the limitations will be described below.
At first, the Ta powder according to the invention is necessary to be produced by the thermal CVD method. The reason is considered due to the fact that the thermal CVD method is suitable for the production of fine metal powder and is the only way capable of producing a β-Ta powder at the moment.
The Ta powder (primary particles) produced by the above thermal CVD method is spherical particles of uniform size as shown in
The Ta powder according to the invention is necessary to be comprised of a single phase of β-Ta of tetragonal system or a mixed phase of β-Ta of tetragonal system and α-Ta of cubic system. Because, an anodic oxide film obtained by chemical conversion of β-Ta of tetragonal system is a dielectric film being small in the leakage current, excellent in the heat resistance and high in the reliability as compared with those of an anodic oxide film obtained by chemical conversion of α-Ta as previously mentioned. The above effects are obtained when the Ta powder is comprised of not only the single phase of β-Ta but also the mixed phase of β-Ta and α-Ta.
There will be described the production method of the Ta powder satisfying the above conditions.
Firstly, an apparatus for producing the Ta powder according to the invention is not particularly limited as long as it is based on a thermal CVD method (vapor-phase reduction method).
In the thermal CVD method, an inert gas such as Ar gas, He gas, N2 gas or the like is generally used as a carrier gas, and a reducing gas such as H2 gas, H2-containing gas, CO gas or the like is generally used as a reduction gas. In the invention, a rare gas such as Ar gas or He gas is used as the carrier gas, and H2 gas is used as the reduction gas for preventing contamination of the resulting Ta powder. Since Ta is a metal easily reacting at a high temperature, it is prevented that a part of the powder is rendered into TaN or TaC by reacting with N2 gas or CO gas or C generated by reduction of CO gas is included in the Ta powder.
The production method of the Ta powder with the above thermal CVD apparatus will be described below.
In the vaporizing part 2 of the reaction pipe is disposed a container (tray) 9 stored with a powdery Ta chloride (TaCl5) as a raw material for Ta powder. In the vaporization furnace 4 disposed so as to encompass the periphery of the vaporizing part is heated TaCl5 located inside the tray 9 to a temperature of about 200˜800° C. to generate vapor of TaCl5, while the TaCl5 vapor is fed to the reduction reaction field 3 with Ar gas fed from the carrier gas feeding pipe 6. The reduction reaction field 3 is a space heated to a temperature of not lower than 1100° C. by a reduction furnace 5 arranged so as to surround the periphery thereof, where TaCl5 vapor fed to the reduction reaction field 3 together with Ar gas is reduced by H2 gas fed from a reduction gas feeding pipe 7 to produce Ta powder according to the following chemical reaction:
TaCl5+5/2H2→Ta+5HCl
The Ta powder produced in the reduction reaction field 3 is discharged from an exhaust pipe 8 together with the carrier gas and collected by a collection vessel 8 not shown.
In order to produce Ta powder comprised of a single phase of β-Ta or a mixed phase of β-Ta and α-Ta and having an average particle size of 30˜150 nm with the above thermal CVD apparatus, it is necessary that the feeding rate of the raw material gas (TaCl5 vapor) to the reduction reaction field in the reaction pipe is a range of 0.05˜5.0 g/cm2·min per unit section area of the reduction reaction field and unit time and the residence time of the TaCl5 vapor in the reduction reaction field is a range of 0.1˜5 seconds, while the temperature of the reduction reaction field (reduction temperature) is controlled to a range of 1100˜1600° C.
The reason why the feeding rate of the TaCl5 vapor is limited to a range of 0.05˜5.0 g/cm2·min per unit section area of the reduction reaction field and unit time is due to the fact that when the feeding rate of the TaCl5 vapor is less than 0.05 g/cm2·min, fine particles of Ta powder produced by reduction reaction are miniaturized because of no growth and it is difficult to obtain a particle size of not less than 30 nm aiming at the invention, while when it exceeds 5.0 g/cm2·min, fine particles of Ta powder produced in the reaction field are considerably grown and it is conversely difficult to control the particle size of the resulting Ta powder to not more than 150 nm. Preferably, it is a range of 0.1˜3.0 g/cm2·min
Here, the reason why the feeding rate of the TaCl5 vapor is per unit section area of the reduction reaction field (per unit section area in a direction perpendicular to the flowing direction of the raw material gas) is considered due to the fact that since the reduction reaction of the TaCl5 vapor itself is terminated with almost no elapsed time, the influence upon the reduction reaction rate is predominantly larger in the section area of the reduction reaction field than the length of the reduction reaction field. Namely, the reaction pipe 1 is usually cylindrical and is constant in the section area, but the reduction reaction of the TaCl5 vapor in the reduction reaction field 3 itself occurs instantly as long as H2 gas is existent, so that the influence of the feeding amount of the raw material upon the particle size of Ta powder produced by the reduction reaction is predominantly larger in the direction of the section area than in the longitudinal direction of the reaction field.
The reason why the residence time of the TaCl5 vapor in the reduction reaction field is 0.1˜5 seconds is considered due to the fact that the particle size of the Ta powder produced by the reduction reaction is increased as the residence time in the reduction reaction field becomes longer or is inversely proportional to the flow rate of the gas fed to the reduction reaction field. Therefore, when the residence time of the TaCl5 vapor in the reduction reaction field is more than 5 seconds, Ta particles are considerably grown and it is difficult to control the particle size to not more than 150 nm, while when it is less than 0.1 second, the residence time in the reaction field becomes extremely short and the particles cannot be grown to a particle size of not less than 30 nm.
The reason why the particle size of Ta powder is proportional to the residence time of TaCl5 vapor in the reduction reaction field as mentioned above is considered as follows. The reduction reaction of the TaCl5 vapor is terminated with almost no elapsed time as previously mentioned. However, the TaCl5 vapor fed to the reduction reaction field with the carrier gas is not immediately mixed with H2 gas fed from the reduction gas feeding pipe. Also, it is necessary that H2 gas is diffused to mix with the TaCl5 vapor for reducing the TaCl5 vapor with H2 gas. Therefore, the reduction reaction of the TaCl5 vapor is considered to be caused in the full region of the reduction reaction field progressing the mixing of H2 gas and TaCl5 vapor, so that the residence time of the TaCl5 vapor in the reduction reaction field affects the particle size of Ta powder.
Moreover, the residence time in the reduction reaction field is determined by dividing the volume of the reduction reaction field by a volume of a feeding gas per unit time. However, since the feeding gas is thermally expanded by heating in the reduction reaction field, it is necessary to convert the total feeding amount of H2 gas and Ar gas to a gaseous volume at an average temperature in the reduction reaction field by Charles' law.
The mixing ratio of H2 gas and Ar gas fed to the reduction reaction field is not particularly limited, but the reaction efficiency can be increased as partial pressure of H2 gas is made higher. Also, the feeding amount of H2 gas and TaCl5 vapor per unit time is necessary to be at least not less than 1 by a molar ratio of H2 to TaCl5 from a viewpoint that the TaCl5 vapor is reduced completely. However, H2 gas fed is not always reacted with all of the TaCl5 vapor, so that when the ratio is less than 2, the reaction efficiency of H2 gas is low. Therefore, the molar ratio of H2 to TaCl5 is preferable to be not less than 2. On the other hand, when the molar ratio exceeds 50, the reaction efficiency becomes higher, but the cost of H2 gas is increased, so that the upper limit is preferable to be about 50.
The reason why the temperature of the reduction reaction field (reduction temperature) is controlled to a range of 1100˜1600° C. is due to the fact that when the reduction temperature is lower than 1100° C., not only the progression of the reduction reaction is slow as disclosed in Patent Document 4, but also the resulting Ta powder is amorphous and the phase of β-Ta is not generated, while when the temperature exceeds 1600° C., Ta powder itself is produced, but the reaction pipe capable of being industrially used at such a higher temperature and in a chloride-containing atmosphere is not existent at the present time, and hence the production of Ta powder becomes impossible practically.
The Ta powder of the invention produced so as to satisfy the above conditions has an average particle size of 30˜150 nm. Further, the inventors have newly found that the Ta powder produced so as to satisfy the above conditions is comprised of a single phase of β-Ta of tetragonal system or a mixed phase of the β-Ta and α-Ta of cubic system, i.e. it is a phase at least mixed with β-Ta phase. Moreover, the existing ratio of α-Ta and β-Ta can be determined semi-quantitatively by I(βTa411)/I(αTa110) as a ratio of a 411 diffraction line of X-ray highest peak of β-Ta to a 110 diffraction line of X-ray highest peak of α-Ta by X-ray diffractometry.
Although the reason why β-Ta of tetragonal system is formed when Ta powder is produced under the above conditions is not clear sufficiently at this moment, it is considered that though only the sputtering is conventionally known as a method of producing β-Ta, the thermal CVD method is similar to the sputtering in a point that solid phase is produced from gaseous phase and hence β-Ta is liable to be easily formed. However, β-Ta of tetragonal system is crystallographically unstable as compared with α-Ta of cubic system, so that the conversion of β-Ta to α-Ta is progressed when the high temperature is kept for not less than a given time. Therefore, the residence time in the reduction reaction field of not lower than 1100° C. is necessary to be within 5 seconds. Moreover, in order to shorten the high-temperature keeping time, it is preferable that the Ta powder produced in the reduction reaction field is cooled to not higher than 300° C. for providing stable β-Ta within 3 seconds.
Since β-Ta of tetragonal system is high in the specific resistance as compared to α-Ta of cubic system, when it is subjected to chemical conversion treatment, an anodic oxide film (chemical converted film) having an excellent dielectric property is obtained. Therefore, when the Ta powder is comprised of a single phase of β-Ta of tetragonal system or a mixed phase of α-Ta of cubic system and β-Ta of tetragonal system and possesses the aforementioned average particle size, it is possible to stably manufacture a Ta capacitor having an electrostatic capacitance of not less than 220 k as a CV value.
Moreover, heavy metal or oxygen as an impurity included in the Ta powder is badly affected to the anodic oxide film to cause the increase of leakage current, so that it is desirable to be decreased as much as possible. Concretely, it is preferable that Fe and Ni are decreased to not more than 0.01 mass % in total and oxygen is decreased to not more than 5 mass %.
When the Ta powder is used as an anode material for a capacitor, it is common to compression-mold the Ta powder into a form of an anode element by means of a dry automatic molding machine. However, the Ta powder produced by the thermal CVD method (primary particles) is fine and low in the bulk density as it is, so that a pushing margin becomes larger and a density of a molded body as an anode element becomes easily non-uniform. Also, it is poor in the fluidity, so that it is difficult to automatically charge into a female mold in the automatic molding machine. In order to use the Ta powder as an anode material, therefore, it is necessary to previously preform granulation to improve the fluidity.
The fluidity is desirable to be within a range of 1˜5 g/second as measured with a funnel having an orifice diameter of 2.63 mm. Also, the Ta powder after the granulation is preferable to have a median diameter d50 on a volume basis of 10˜500 μm and a bulk density of 2.0˜5.0 g/cm3. Moreover, the fluidity according to the invention is represented as a value obtained by dividing a mass (g) of a powder to be measured by a dropping time (seconds) measured with a funnel having an orifice diameter of 2.63 mm according to JIS Z2502.
The reason why the fluidity is limited to a range of 1˜5 g/second is due to the fact that when the fluidity is less than 1 g/second, since the fluidity is poor, the scattering in the amount of the powder automatically charged to a mold in the automatic molding machine becomes large and hence the scattering in the weight of the anode element after the compression molding becomes larger, while when the fluidity exceeds 5 g/second, the particle size of the granulated powder becomes too large and it is difficult to obtain an anode having a uniform density by compression molding. Preferably, it is a range of 1.5˜4 g/second.
The reason why the median diameter d50 on a volume basis is limited to a range of 10˜500 μm is due to the fact that when d50 is less than 10 μm, the fluidity and formability are deteriorated and the molding is difficult, while when d50 exceeds 500 μm, it is difficult to uniformly fill the powder into the mold and hence the density of the molded body as an anode element becomes non-uniform. The preferable median diameter d50 is a range of 15˜300 μm. Moreover, the median diameter d50 on a volume basis is a value obtained by measuring an image of particles photographed with a scanning type electron microscope at a magnification of 100 times by means of an image analysis type particle size distribution software as the case of primary particles.
The reason why the bulk density is limited to a range of 2.0˜5.0 g/cm3 is due to the fact that when the bulk density is less than 2.0 g/cm3, the electrostatic capacity per unit volume becomes small and the size of the capacitor is made large, while when the bulk density exceeds 5.0 g/cm3, it is difficult to impregnate manganese dioxide MnO2 as a cathode after the sintering. The preferable bulk density is a range of 2.5˜4.5 g/cm3. Here, the bulk density in the invention means a bulk density in loosely packed state measured according to JIS Z2504.
Moreover, the method of providing Ta granulated powder from the Ta powder obtained by the thermal CVD method (primary particles) is not particularly limited as long as granulated powder satisfying the above conditions is obtained. For example, there can be preferably used a method wherein the Ta particles obtained by the thermal CVD method are added with acryl, polyvinyl alcohol (PVA), polyvinyl butyral (PVB), methyl cellulose, carboxyl cellulose or the like as a granulating agent (binder) and granulated by tumbling in a rotary drum or the like, a high-speed rotary granulating method, a fluidized-bed granulating method, a spray drying method and so on.
In a thermal CVD apparatus shown in
0.04
0.09
6.30
With respect to the thus obtained Ta powder (primary particles) are measured primary particle size, BET specific surface area and crystalline phase by the following methods.
Then, the Ta powder (primary particles) is washed with water, dried, added with a cellulose-based binder and granulated by a rotary drum to form granulated powder, which is subjected to the following evaluation tests.
Further, a tantalum sintered element is manufactured by using the Ta granulated powder as an anode material and then electrostatic capacity (CV value) and leakage current are measured according to test conditions of 100 kCV powder defined in Table 1 of Exhibit in Standard by Electronic Industries Association of Japan EIAJ RC-2361A, “Test method of tantalum sintered element for tantalum electrolytic capacitor”.
The measured results are shown in Table 2. As seen from Table 2, the CV value is only about 150 k in case of using Ta powder produced by the conventional Na reduction method.
On the contrary, the Ta powder produced under conditions adapted to the invention has a primary particle size of 30˜150 nm and its crystalline phase is comprised of a single phase of β-Ta of tetragonal system or a mixed phase of β-Ta and α-Ta of cubic system. Further, Ta capacitor manufactured by using Ta granulated powder, which is formed by granulating the Ta powder within a range adapted to the invention, has an excellent property that the CV value is not less than 220 k.
278
441
22
1.89
192
0.00
27
1.92
0.73
824
6.1
0.76
221
0.00
1.89
The Ta powder according to the invention can be applied to not only a tantalum solid electrolytic capacitor but also a powder metallurgy using tantalum powder.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2013/066319 | 6/13/2013 | WO | 00 |
