The invention relates generally to a system, device, materials, and methods for metasurface-based optics and, in particular, to metasurface-based optical devices and systems configured to be fabricated with absence of the Damascene-type of processing but, instead, relying on conventional lithography/etching processes, and to operate with extremely low levels of optical loss the mid- and near-ultraviolet (UV) portion of the electromagnetic spectrum.
Recent years have witnessed rapid development of all-dielectric metasurfaces, characterized by low optical loss and ease of transmission-mode operation, for spatial shaping of optical wavefronts in a compact and integration-friendly manner. Researchers have demonstrated an array of high-performance, all-dielectric metasurfaces operating in the infrared and visible regimes, using materials such as Silicon (Si), Titanium Oxide (TiO2), and Gallium Nitride (GaN).
One natural trend for the future development of all-dielectric metasurfaces is to attempt extend the operation frequencies at which such metasurfaces can successfully operate into the ultraviolet (UV) regime (which is a technologically important spectral regime, employed by diverse applications including photolithography, spectroscopy, high-resolution imaging, atomic trapping and quantum optics).
Towards this goal, for example, metasurfaces employing crystalline-Si have been attempted, which operate down to the mid-UV (free-space wavelength range of approximately 280 nm≤λ0≤315 nm). But these devices are fabricated through a dedicated crystalline-Si membrane transfer process, and at the same time, their operational efficiencies remain limited by the severe absorption loss at frequencies corresponding to energies above the bandgap of Si.
In contrast, higher device efficiencies could be achieved by employing UV-transparent dielectric materials. Examples of such materials include Niobium Pentoxide (Nb2O5) (at wavelengths of approximately 315 nm≤λ0≤380 nm). Additional examples include Hafnium Oxide (HfO2), already shown to be used for formation of metasurfaces operating successfully at the record-short, deep-UV wavelengths. In a latter demonstration, however, the fabrication of the metasurfaces required the development of a judicious resist-based Damascene process incorporating low-temperature atomic layer deposition (ALD) of the target dielectric material (which is, as would be appreciated by a skilled artisan, substantially more complex than a conventional CMOS-like process).
Embodiments of the invention provide a method for fabricating an all-dielectric metasurface-based optical device including at least one of a metalens, a metahologram, and an Airy beam generator. The method includes a step of utilizing tantalum pentoxide material target to deposit and etch, on a chosen substrate, a tantalum pentoxide layer under such conditions that the tantalum pentoxide layer has a submicron thickness and an extinction coefficient smaller than 0.1 at each target wavelength within a range from at least 277 nm to about 1700 nm and that the device has optical transmittance of at least 40% at every operational wavelength within a range from about 280 nm to about 380 nm.
Embodiments additionally provide a method that includes a step of forming a preform layer by reactive sputtering, in a sputtering chamber, of tantalum pentoxide on a chosen substrate while simultaneously reducing an extinction coefficient of such preform layer below 0.1 at each target wavelength within a range from at least 277 nm to about 800 nm; and a step of etching such preform layer to create the sub-wavelength-scaled pattern structure that is dimensioned to operate as at least one of a refractive optical element, a diffractive optical element, a birefringent optical element, and a resonant optical element at an operational wavelength in a mid-UV range and/or a near-UV range of an electromagnetic spectrum. In at least one case, the step of forming may involve simultaneously reducing the extinction coefficient to a value below 0.01 at each wavelength within a range from at least 292 nm to about 800 nm, while the operational wavelength is defined within a spectral range from about 280 nm to about 380 nm; and/or the step of forming may involve simultaneously reducing the extinction coefficient to a value below 0.001 at each wavelength within a range from at least 297 nm to about 800 nm, while the operational wavelength is within a spectral range from about 280 nm to about 380 nm. In the latter case, the step of forming may additionally include the process of simultaneously reducing the extinction coefficient to a value below 0.001 at each wavelength within a range from about 800 nm to about 1700 nm. Additionally or in the alternative, and in at least one implementation, the step of forming may include simultaneously reducing the extinction coefficient to a value below 0.00001 at each wavelength within a range from at least 299 nm to about 800 nm (while the operational wavelength is within a spectral range from about 280 nm to about 380 nm) and/or simultaneously reducing the extinction coefficient to a value below 0.00001 at each wavelength within a range from about 800 nm to about 1700 nm. In practically every embodiment, the step of forming includes varying a flow of oxygen into the sputtering chamber and/or the step of forming is performed by sputtering tantalum pentoxide while simultaneously maintaining a refractive index of the preform layer above 2.21 at each first wavelength within a range from at least 277 nm to about 800 nm. (At least in the latter case, the step of forming may additionally or in the alternative include sputtering of tantalum pentoxide while simultaneously maintaining the refractive index of said preform layer above 2.0 at each second wavelength within a range from about 800 nm to about 1700 nm; and/or delivering a flow of oxygen into said sputtering chamber at a rate of at least 2 standard cubic centimeters per minute). In substantially every embodiment, the process of etching may be configured to form the target pattern structure that includes only tantalum pentoxide and/or include a process of generating an array of cylindrical columns of tantalum pentoxide of sub-micron height and aspect ratios of at least 5 (here, an aspect ratio of a respective columns defined as a ratio of a height to a transverse dimension of such column). Alternatively or in addition, and in substantially every embodiment, the process of etching may include generating an array of cylindrical columns of tantalum pentoxide of sub-micron height while the array has a spatial period not exceeding the operational wavelength; and/or while such array is a spatially-periodic array with a spatial period having a value within a range from about 50 nm to about 600 nm; and/or such array includes cylindrical pillars having different diameters to form areas of the array characterized by different filling factors. IN at least one implementation. The etching of the preform layer is carried out under conditions described as Ta2O5+C4F8+O2→TaFx+COFx+COx.
Embodiments additionally provide a method for operating an optical component that contains the pattern structure fabricated as defined above. Such method for operating includes at least one of the following steps:—changing at least one of a direction of propagation and a degree of divergence of light at the operational wavelength by transmitting said light through the pattern structure with efficiency of at least 40%; —forming an image of an object in said light at the operational wavelength emanating from the object with the use of said pattern structure; and—transmitting said light at the operational wavelength through said pattern structure without forming non-zero diffractive orders of said light.
Embodiments additionally provide a metasurface that includes an optical substrate, and a spatially-periodic two-dimensional array of cylindrical pillars oriented on the optical substrate substantially normally to the optical substrate (such cylindrical pillars include tantalum pentoxide that has extinction coefficient of less than 0.1 at each target wavelength within a range from at least 277 nm to about 1700 nm). Here, a spatial period of the array is substantially constant across an area of the optical substrate occupied by the array while different cylindrical pillars have different diameters to form areas of the array having different filling factors and heights of the cylindrical pillars in the array approximately equal or exceed a free-space operational wavelength chosen within a mid-UV region and a near-UV region of the electromagnetic spectrum such that the metasurface is configured to operate, in transmission of light at said operational wavelength, as at least one of a refractive optical element, a diffractive optical element, a birefringent optical element, and a resonant optical element. In at least one specific case, a cylindrical pillar in the array is dimensioned as an elliptic cylinder and the spatial period does not exceed the operational wavelength such that light, incident onto the metasurface, does not diffract upon transmission through the metasurface. Alternatively or in addition, the operational wavelength may be within a range from about 280 nm to about 380 nm, and a refractive index value of the tantalum pentoxide is greater than 2.0 at each target wavelength. Alternatively or in addition, the tantalum pentoxide material is configured to have a refractive index that is higher than 2.2 at each wavelength between 280 nm and 380 nm and/or an extinction coefficient that is below 0.001 at each wavelength from at least 297 nm to about 1700 nm or even below 0.00001 at each wavelength from at least 299 nm to about 1700 nm.
The invention will be more fully understood by referring to the following Detailed Description of Specific Embodiments in conjunction with the Drawings, of which:
Generally, the sizes and relative scales of elements in Drawings may be set to be different from actual ones to appropriately facilitate simplicity, clarity, and understanding of the Drawings. For the same reason, not all elements present in one Drawing may necessarily be shown in another.
A person of ordinary skill in the art can readily appreciate that the major predicament standing in the way of the successful expansion of metasurface-related technologies into the mid- and near-UV spectral range (to say nothing about the deep-UV spectral range) is two-fold: on the one hand, the conventionally-used dielectric materials do not necessarily (and do not typically) possess the levels of optical transmission in that spectral region that is required for efficient use of the metasurface devices (here, Si is the primary example, demonstrating practically-acceptable levels of transmission only in the spectral region that does not extend below about 500 nm). On the other hand, materials that do potentially possess the required low levels of transmission in the UV-range (be it a near-UV spectral range, or a mid-UV spectral range, or a deep-UV spectral range) do not lend themselves to being processed in a well-defined, well-established, and/or well-controllable manner (for example, such materials are not necessarily CMOS compatible). As discussed in U.S. Ser. No. 17/136,277, hafnium oxide is one of such materials. For the purposes of this disclosure and the appended claims, and unless specifically defined otherwise, the terms “near-UV”, “mid-UV”, and “deep-UV” as applied to portions or ranges of the electromagnetic spectrum are defined as and referred to as follows: near-UV range (free-space wavelength range: 315 nm≤λ0≤380 nm; energy range: 3.26 eV≤E0≤3.94 eV); mid-UV range (free-space wavelength range: 280 nm≤λ0≤315 nm; energy range: 3.94 eV≤E0≤4.43 eV), deep-UV range (190 nm≤λ0≤280 nm; 4.43 eV≤E0≤6.53 eV).
This currently-existing hindrance begs the question of whether it is possible to adopt a dielectric material—the one that is successfully and controllably deposited and patterned with the use of a standard, conventional, CMOS-like approach but that is not necessarily transparent enough in the target UV-spectral region—for creation of the metasurfaces in the UV-range by modifying the properties of such material to reduce the level of optical losses at the UV-wavelengths while, at the same time, preserving the compatibility of this material with the conventional lithography-like processing methodologies.
In particular, it is well recognized in related art that films of Ta2O5 (that has an intrinsic wide bandgap) deposited using conventional radiofrequency (RF) sputtering inevitably have defects causing sub-bandgap absorption preventing the use of such films for fabrication of practically-useful metasurface-based devices. This disclosure addresses such a problem and presents a technological modification, as a result of which Tantalum Pentoxide Ta2O5 (that has been previously known to possess high level of optical losses in the mid- and near-UV spectral region that prevented this material up to-date from being used for construction of metasurfaces) can now be successfully deposited in a conventional sputtering chamber with reduction of the optical losses to the lowest levels unachievable thus far.
Accordingly, embodiments of the discussed invention demonstrate a new all-dielectric, UV-metasurface optical system platform based on Tantalum Pentoxide and methodology of fabricating such a platform. The choice of this material for the stated goals is justified at least by (i) its wide bandgap value Ea˜4.0 eV (corresponding to 309 nm), which at least in theory can enable the low-loss metasurface operation across the whole near-UV and part of the mid-UV ranges (in contrast to the Si- or Nb2O5-based devices); (ii) possible use of high-aspect-ratio, reactive ion etching (RIE) chemistries using fluorine-based gases, enabling a straightforward and fast-turnaround fabrication process (in contrast to the Nb2O5- or HfO2-based devices); (iii) large nonlinear coefficients of such material, potentially enabling the implementation of nonlinear metasurfaces for harmonic generation, optical switching and modulation, as well as quantum information processing.
In fact, as the skilled artisan will readily recognize, some of the properties of Ta2O5 (especially in the UV portion of the spectrum) are superior to those of Si3N4 (used as the state-of-the art material in the field of nanophotonics, for example):
Plots a, a1 of
In one specific example, other conditions of the process of deposition of the reform layer included: RF power of about 400 W, Ar-gas flow rate (in addition to the use of O2) of about 50 sccm, base pressure of about 5e−6 Torr, with the film deposition rate of about 0.336 nm/s.
The device fabrication generally included key steps such as Ta2O5 film deposition using the developed reactive sputtering recipe, electron beam lithography, Aluminum (Al) etching mask lift-off, and RIE of Ta2O5 with a gas mixer of C4F8, O2 and He. In one specific example, the used etching chemistry (of the RIE process) for Ta2O5 was Ta2O5+C4F8+O2→TaFx+CoFx+COx.
Referring now to
An SEM image and a schematic illustration of such metahologram are presented in
The distribution of this FoM is displayed in
Referring again to
With the knowledge of the details of the implementation of some embodiments of the invention, a skilled artisan will now readily appreciate that the discussed methodology enables and facilitates the design and fabrication of various optical devices based on the tantalum-pentoxide metasurfaces. Such devices include and are not limited to a metalens, a beam generator, a metahologram, and additional optical components the examples of which (fabricated with a related optical material HfO2) were discussed in detail in the U.S. patent application Ser. No. 17/136,277 that provided examples of designs of specific optical elements. In general, embodiments of the invention provide a sub-wavelength-scaled pattern structure made of tantalum pentoxide that is dimensioned to operate as at least one refractive, diffractive, birefringent, and resonant optical elements at an operational wavelength defined in a mid-UV or a near-UV range of the electromagnetic spectrum.
The proposed embodiments understandably complement and/or provide the alternative to the HfO2-based devices discussed in U.S. patent application Ser. No. 17/136,277 that were shown to operate across the whole near-UV and mid-UV ranges, and most of the deep-UV range but that require a sophisticated Damascene-type process to be fabricated. Implementations of the invention illustrate the novel practical use of a dielectric material that enables high-performance metasurfaces operating in the near-UV regime, and part of the mid-UV regime. In advantageous contradistinction with the use of HfO2, embodiments of current invention only require conventional sputtering and RIE to be fabricated. Additionally, since Ta2O5 possesses a large nonlinear coefficient, the implementation of nonlinear tantalum-pentoxide-based metasurfaces is also enabled.
Features of the specific implementation(s) of the idea of the invention is described with reference to corresponding drawings, in which like numbers represent the same or similar elements wherever possible. In the drawings, the depicted structural elements are generally not to scale, and certain components are enlarged relative to the other components for purposes of emphasis and understanding. It is to be understood that no single drawing is intended to support a complete description of all features of the invention. In other words, a given drawing is generally descriptive of only some, and generally not all, features of the invention. A given drawing and an associated portion of the disclosure containing a description referencing such drawing do not, generally, contain all elements of a particular view or all features that can be presented is this view, for purposes of simplifying the given drawing and discussion, and to direct the discussion to particular elements that are featured in this drawing. A skilled artisan will recognize that the invention may possibly be practiced without one or more of the specific features, elements, components, structures, details, or characteristics, or with the use of other methods, components, materials, and so forth. Therefore, although a particular detail of an embodiment of the invention may not be necessarily shown in each and every drawing describing such embodiment, the presence of this detail in the drawing may be implied unless the context of the description requires otherwise. In other instances, well known structures, details, materials, or operations may be not shown in a given drawing or described in detail to avoid obscuring aspects of an embodiment of the invention that are being discussed.
A person of ordinary skill in the art will readily appreciate that references throughout this specification to “one embodiment,” “an embodiment,” “a related embodiment,” or similar language mean that a particular feature, structure, or characteristic described in connection with the referred to “embodiment” is included in at least one embodiment of the present invention. Thus, appearances of the phrases “in one embodiment”, “in an embodiment”, and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment. Accordingly—as the skilled artisan will readily appreciate—while in this specification the embodiments have been described in a way that enables a clear and concise specification to be written, it is intended that substantially none of the described embodiments can be employed only by itself to the exclusion of other embodiments (to the effect of practically restriction of some embodiments at the expense of other embodiments), and that substantially any of the described embodiments may be variously combined or separated to form different embodiments without parting from the scope of the invention.
The invention as recited in claims appended to this disclosure is intended to be assessed in light of the disclosure as a whole.
This US Patent Application claims the benefit of and priority from the U.S. Provisional Patent Application No. 63/022,118 filed on May 8, 2020. This patent application is also a continuation-in-part for the U.S. patent application Ser. No. 17/136,277 filed on Dec. 29, 2020, which in turn claims priority from the U.S. Provisional patent Application No. 62/956,875 filed on Jan. 3, 2020. The disclosure of each of the above-identified applications is incorporated herein by reference.
This invention was made with government support under contract 70NANB14H209 awarded by the National Institute of Standards and Technology. The government has certain rights in the invention.
Number | Date | Country | |
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63022118 | May 2020 | US | |
62956875 | Jan 2020 | US |
Number | Date | Country | |
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Parent | 17136277 | Dec 2020 | US |
Child | 17315108 | US |