Claims
- 1. A method for replicating a monolayer comprising the steps of: providing a first set of monomers;
forming the first set of monomers into a monolayer having a desired pattern; optionally polymerizing the first set of monomers, forming a first optionally polymerized monolayer having a desired pattern; attaching a second set of monomers to the first patterned, optionally polymerized monolayer, forming a second monolayer attached to the first patterned, optionally polymerized monolayer; polymerizing the second monolayer, forming a second polymeric monolayer attached to the first patterned, optionally polymerized monolayer; and dissociating the second polymeric monolayer from the first patterned, optionally polymerized monolayer.
- 2. A method for replicating a monolayer comprising the steps of:
providing a plurality of monomers; providing a template for a monolayer to be replicated; binding the plurality of monomers to the template, forming a monolayer replicant; polymerizing the monolayer replicant; and disassociating the polymerized monolayer replicant from the template.
- 3. The method of claim 2, wherein the template is a patterned substrate.
- 4. The method of claim 2, wherein the template is a patterned monolayer in solution.
- 5. The method of claim 2, further including the step of using the polymerized monolayer replicant as a template for creation of at least one additional polymerized monolayer replicant.
- 6. The method of claim 2, wherein said monomers are nanoparticle ensembles.
- 7. The method of claim 6, wherein said monomers are selected from the group consisting of Hentriaconta-11,13,20,22-tetraynoic acid, Hentriaconta-11,13,20,22-tetraynoic acid amide, Triaconta-10,12,19,21-tetraynoic acid amide, Triaconta-10,12,19,21-tetraynoic acid, and other molecules of that family.
- 8. The method of claim 2, further including the step of selective mineralization of the replicant.
- 9. The method of claim 2, further including the step of electroless plating of the replicant.
- 10. The method of claim 2, further including the steps of nanoparticle adhesion and sintering of the replicant.
- 11. The method of claim 2, further including the step of growing a semiconductor upon the replicant.
- 12. A method for assembling a multilayer film comprising the steps of:
providing a layer template; providing a plurality of monomers; binding the plurality of monomers to the template to form a layer; polymerizing the formed layer; using the polymerized layer as a template for a subsequent layer; and repeating the steps of binding, polymerizing, and using until a multilayer film of desired thickness is obtained.
- 13. A method for replicating a monolayer comprising the steps of:
providing a first set of monomers having a first recognition chemistry; providing a second set of monomers having a second recognition chemistry, the second recognition chemistry being complementary to the first recognition chemistry; forming a first type of template from a subset of the first set of monomers; binding a subset of the second set of monomers to the first type of template to form a replicant of a first replicant type; polymerizing the replicant of a first replicant type; disassociating the polymerized replicant of a first replicant type from the first type of template; and utilizing the polymerized replicant of a first replicant type as a second template type for replicants of a second replicant type.
- 14. A method for replicating a two-dimensional patterned structure comprising the steps of:
providing a plurality of monomer units having crosslinker arms; providing a template of the two-dimensional patterned structure; binding the monomer units to the template; reacting the crosslinker arms to bind the monomer units to each other to form a two-dimensional replicant; and disassociating the two-dimensional replicant from the template.
- 15. A method for forming a patterned layer of metal on a surface comprising the steps of:
providing a surface having thereon a patterned layer of a photoresist material, portions of the surface not being covered by the photoresist material; attaching metallic nanoparticles to the portions of the surface not covered by the patterned layer of the photoresist material; and melting the metallic nanoparticles, thereby forming a layer of the metal having a pattern complementary to the patterned layer.
- 16. A method for replicating a multi-component pattern comprising the steps of:
providing a plurality of sets of monomers having recognition chemistries; providing a template having a plurality of regions, each region being complementary to a different set of monomers; binding a set of monomers to each region to form a multi-component replicant; polymerizing the multi-component replicant; and disassociating the multi-component replicant from the template.
- 17. The method of claim 16, further including the step of binding a plurality of inorganic materials to the multi-component replicant.
- 18. The method of claim 17, wherein at least one of the inorganic materials is metallic.
- 19. The method of claim 16, further including the step of selective mineralization of the multi-component replicant.
- 20. The method of claim 16, further including the step of electroless plating of the multi-component replicant.
- 21. The method of claim 16, further including the step of growing a semiconductor upon the multi-component replicant.
- 22. A family of molecules exemplified by Hentriaconta-11,13,20,22-tetraynoic acid, Hentriaconta-11,13,20,22-tetraynoic acid amide, Triaconta-10,12,19,21-tetraynoic acid amide, and Triaconta-10,12,19,21-tetraynoic acid, the molecules having two diacetylene units linked by a methylene chain of from 1 to 20 carbons to form a bis(diacetylene) unit, an alkyl chain of from 1 to 20 carbons terminating in an inert functionality such as a methyl on one end of the bis(diacetylene) unit, and an alkyl chain of from 1 to 20 carbons terminating in an amide or carboxylic acid at the other end of the bis(diacetylene) unit.
RELATED APPLICATIONS
[0001] This application claims priority to United States Provisional Application Ser. No. 60/396,486, filed Jul. 17, 2002.
Provisional Applications (1)
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Number |
Date |
Country |
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60396486 |
Jul 2002 |
US |