This invention relates to thermal detectors, and more particularly to an uncooled thermal detector based on liquid crystals and silicon process technologies.
Imaging at wavelengths greater than 1.1 μm (infrared imaging) is important for military and commercial applications. Thermal imagers may be cooled or uncooled. Cooled thermal imagers, such as those based on an exotic material such as mercury cadmium telluride (HgCdTe), must be cooled to cryogenic temperatures, and the imaging device itself is made of expensive and toxic materials. Cooled detectors have the highest sensitivity but suffer from size, weight and power constraints and technology saturation as pixel counts are not increasing.
Uncooled thermal detectors are increasingly important for such military applications as tactical day and night imaging; commercial applications include firefighting, search and rescue missions, medical diagnoses and night-time driving.
Present uncooled thermal imagers are limited in format (less than one Mpixel) and sensitivity. State-of-the-art uncooled microbolometers are based on thermistors whose performance (resolution and sensitivity) has progressed slowly over the past few years, translating directly into high cost. Bolometers require complex fabrication methods and to date cannot deliver the resolution that CCDs or CMOS imagers routinely supplied over a decade ago.
Liquid crystals were investigated for thermal imaging in the 1970s [1], but the technologies did not exist or were not available to make an optical integrated thermal imager. In particular, microelectromechanical machines (MEMs) processes had not been invented, solid-state-imagers had just been invented and were not of the size or format needed, and light emitting diodes were relatively inefficient. Other optical techniques have been explored by others [2, 3]. The numbers in brackets refer to the references included herewith. The contents of all of these references are incorporated herein by reference in their entirety. These techniques have suffered from a combination of low sensitivity, high noise, non-uniform pixel response, and difficult fabrication processes.
It is therefore an object of the present invention to provide an improved uncooled thermal imager.
The thermal detector according to the invention includes a lens for focusing infrared light forming a thermal image onto a liquid crystal array, thereby changing the temperature of the liquid crystals to alter a physical property of the liquid crystals. A source of visible light is arranged to illuminate the liquid crystal array which changes the light intensity reflected or transmitted from the liquid crystal array with changes in temperature of the liquid crystals. For an example case using polarized light, a cross polarizer is provided to receive and transmit therethrough the light from the liquid crystal array, the cross polarizer adapted to change the intensity of the light. The signal can be viewed directly with an eye or sent to an imager that receives and detects the change in intensity of the tight from the cross polarizer whereby the thermal image is recreated as an electronic signal. In an example embodiment, the physical property is index of refraction but other liquid crystal properties can be used such as light scattering or molecular twist pitch change as in cholesterics. Also in this example embodiment the liquid crystal array includes birefringent nematic liquid crystals. However, a variety of other liquid crystal metaphases are envisioned to be possible such as cholesterics, blue phase and various smectic phases. The imager may be a charge coupled device or a CMOS active pixel sensor.
In another preferred embodiment, the liquid crystals include a substrate, a low thermal conductance leg extending from the substrate, an absorber layer and a liquid crystal layer. A suitable absorber layer is nickel or to simplify the pixel the liquid crystal can be fabricated to also be the absorber. The thermal imager of the invention is particularly adapted for light in the mid- to long-wavelength spectrum. In particular, suitable ranges are 3-5 μm and 8-12 μm. A display may be provided for displaying still pictures or videos from the electronic signal.
a-3f are schematic illustrations of the process flow for microbolometer fabrication
With reference to
The optical response near the phase change of liquid crystals is highly temperature dependent. Incident infrared radiation will cause a temperature change in the liquid crystal material 18 thus inducing a change in polarization in the visible light transmitted or reflected from the liquid crystal. By employing a visible light source 26 the reduction or enhancement of the light transmission will be detected by a visible light imager 24 thus generating a profile of the incident infrared light. While a single light source is shown in the figure, multiple light sources operating at different wavelengths can be used to increase the dynamic range. The advance of LED technology has made compact and efficient multiple wavelength light sources possible.
The present invention will enable silicon-based CCDs or CMOS imagers to produce images of an infrared scene using the unique thermal-to-optical liquid crystal transducer disclosed herewithin. The invention uses the rich technological advantages of silicon-based microelectronics along with the advantages of decades-long research into perfecting silicon based imaging in the visible part of the electromagnetic spectrum.
The present invention thus leverages the ever-expanding visible imager technology that is inexpensive and high resolution. Further, by separating the thermal infrared-to-optical transducer from the solid-state imager readout, the transducer pixel arrays can be better optimized for detecting the infrared signal. This invention will enable mid- to long-wavelength light to be converted to an electronic image based on the manipulation of the incoming radiation and subsequent conversion or altering of a secondary light source incident on the solid-state imager.
Another embodiment of the invention is shown in
With reference now to
It is recognized that modifications and variations of the present invention will be apparent to those of ordinary skill in the art and it is intended that all such modifications and variations be included within the scope of the appended claims.
This application claims priority to provisional application Ser. No. 61/378,998 filed on Sep. 1, 2010, the contents of which are incorporated herein by reference in their entirety.
This invention was made with government support under contract number FA8721-05-C-0002, awarded by the US Air Force. The government has certain rights in the invention.
Number | Date | Country | |
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61378998 | Sep 2010 | US |