Patent Application
20120118346
This application claims the benefit of Taiwan application Serial No. 099139248, filed Nov. 15, 2010, the subject matter of which is incorporated herein by reference.
1. Technical Field
The disclosure relates in general to a thermoelectric apparatus and a method of fabricating the same, and more particularly to a thermoelectric apparatus capable of increasing power output of thermoelectric modulec and a method of fabricating the same.
2. Description of the Related Art
The problem of energy shortage has made the development of renewable energy technologies become an important issue. Take the vehicles for example. The waste heat of the engine of some vehicles amounts to about 33% of the power, and fuel consumption can be reduced if the exhaust heat can be used for power generation by way of thermoelectric temperature difference. Additionally, factories and households both discharge a large amount of waste heat. Therefore, how to recycle the discharged waste heat has also become an important issue. Currently, there still lacks suitable technologies for recycling the waste heat, particularly the waste heat generated by low temperature thermal source, and the energy loss is considerable.
Thermoelectric device is a device for converting thermal energy to electrical energy and vice versa. Based on the properties of thermoelectric conversion, two fields of application, namely heating/cooling capacity and power generation, are created. According to the Seebeck effect, when an n-type semiconductor material and a p-type semiconductor material that are electrically coupled contact different temperatures at the p material connection end and the n material connection end respectively, energy is transferred, and electrical current is generated in the thermocouple. The thermoelectric conversion can be used in waste heat power generation for generating power according to the temperature difference at the two ends of a thermoelectric device which is a heat generator. On the other hand, according to the Peltier effect, when a direct current is applied to a thermoelectric device, heat absorption and heat dissipation will occur to the two ends of the thermoelectric device respectively, and such principle can be used in the cooling or heating technologies.
Referring to
Despite many studies have been proposed for enhancing the properties of thermoelectric materials and improving the efficiency of thermoelectric devices, the achievements are still limited. When the ZT value of a thermoelectric material is smaller than 1, the performance of the thermoelectric device will be restricted. In 1993, Professors Hicks and Dresselhaus et al of the Massachusetts Institute of Technology of USA suggested that the ZT value could be effectively increased if the scale of thermoelectric materials is downsized to nano level. In 2001, Venkatasubramanian et al of the RTI (Research Triangle Institute) of USA disclosed that the ZT value of the p-type Bi2Te3/Sb2Te3 super-lattice thin film can reach 2.4 at room temperature, marking a breakthrough for the bottleneck that the ZT is about 1.
In the field of material technology, the thermoelectric materials with high thermoelectric performance (the ZT value) continue to be developed. It is also an important direction in the development of technology to design a thermoelectric devices or structures capable of generating larger volume of power.
According to an embodiment of the disclosure, a thermoelectric apparatus including a first assembly, a second assembly, at least a first heat conductor, and at least a second heat conductor is provided. The first assembly includes a first substrate and a second substrate opposite to each other, and several first thermoelectric material sets disposed between the first and second substrates, wherein the first substrate has at least a first through hole. The second assembly, stacked above the first assembly, includes a third substrate and a fourth substrate opposite to each other, and several second thermoelectric material sets disposed between the third and fourth substrates, wherein the fourth substrate has at least a second through hole. Each of the first and second thermoelectric material sets has a p-type thermoelectric element and an n-type thermoelectric element electrically connected to each other. The first heat conductor penetrates the first through hole of the first high temperature substrate, and two ends of the first heat conductor connect the fourth and second low temperature substrates, respectively. The second heat conductor penetrates the second through hole of the fourth substrate, and two ends of the second heat conductor connect the first and third substrates, respectively.
According to another embodiment of the disclosure, a method for fabricating thermoelectric apparatus is provided. Firstly, a first substrate is provided, wherein at least a first heat conductor and several first thermoelectric material sets are disposed vertically on the first substrate, and each first thermoelectric material set has a p-type thermoelectric element and an n-type thermoelectric element electrically connected to each other. A first substrate is disposed on the first thermoelectric material sets, wherein the first substrate has at least a first through hole for the first heat conductor to penetrate through. A second heat conductor is disposed on the first substrate. A second substrate is disposed on the first heat conductor, wherein the second substrate has at least a second through hole, several second thermoelectric material sets are disposed vertically on the second substrate, each second thermoelectric material set has a p-type thermoelectric element and an n-type thermoelectric element electrically connected to each other, and the second heat conductor penetrates the second through hole. Afterwards, a third substrate is disposed on the second thermoelectric material sets, wherein one end of the second heat conductor is connected to the third substrate.
The above and other aspects of the disclosure will become better understood with regard to the following detailed description of the non-limiting embodiment(s). The following description is made with reference to the accompanying drawings.
A thermoelectric apparatus and a method of fabricating the same are disclosed in a number of embodiments below. The structure of one embodiment of the thermoelectric apparatus includes several layers of thermoelectric modules stacked vertically. The thermoelectric apparatus is coupled to a thermal source for performing the thermoelectric conversion. Each layer of thermoelectric module includes a substrate with relative high temperature, a substrate with relative low temperature, the p-type thermoelectric elements and the n-type thermoelectric elements. An upper conductive layer and a lower conductive layer are respectively disposed on the top and the bottom of each layer of elements for serially connecting the p-type thermoelectric elements and the n-type thermoelectric elements, respectively. The thermal conductive material vertically penetrates the through hole of the substrate with relative low temperature of the thermoelectric module disposed at the upper layer, and connects the substrates with relative high temperature of the thermoelectric modules respectively disposed at the upper layer and at the lower layer. Also, another thermal conductive material vertically penetrates the through hole of the substrate with relative high temperature of the thermoelectric module disposed at the lower layer, and connects the substrates with relative low temperature of the thermoelectric modules respectively disposed at the upper layer and at the lower layer.
A first embodiment and a second embodiment are disclosed below for elaborating the structure of the thermoelectric apparatus. However, the detailed structure and manufacturing processes disclosed in the embodiments of the disclosure are for detailed descriptions only, not for limiting the scope of protection of the disclosure.
Referring to
Likewise, the second assembly 32 includes a third substrate 322 and a fourth substrate 321 disposed oppositely to each other, wherein the fourth substrate 321 has at least a second through hole 321h. In
The thermoelectric apparatus 3 further includes at least a first heat conductor 34 and a second heat conductor 36. In
The heat conductor and the through hole can be isolated by air or an insulating material. As indicated in
In addition to the way of isolating thermal transfer as indicated in
Furthermore, the heat conductor and the substrate can be bonded by way of soldering or by a mechanism such as a recess disposed on the substrate, and the disclosure does not have specific restrictions. In addition to the way of disposing the first and second heat conductors 34 and 36 on their corresponding substrates as indicated in
In an embodiment, the modules of the thermoelectric apparatus can be sealed or surrounded by a frame made of a material with low thermal conductivity. The assembly 3 illustrated in
Moreover, the thermoelectric apparatus may further include a number of conductive wires (not shown in the drawings) connected to the p-type and n-type thermoelectric elements 314 and 315 of the first assembly 31 and the p-type and n-type thermoelectric elements 324 and 325 of the second assembly 32 respectively. In the application of power generation, when suitable temperatures are applied to the substrates, for example, the temperatures applied to the first and third substrates 312 and 322 are relative high and the temperatures applied to the second and fourth substrates 311 and 321 are relative low, the power generated by the thermoelectric apparatus due to the temperature difference can be transferred via the conductive wires (used as electrodes). The conductive wires can be processed in many different ways. If the assembly adopts a vacuum structure and a lower temperature, then the conductive wires can be encapsulated by a molding compound. If the assembly adopts a higher temperature, then the through hole is sealed after the conductive wires pass the through hole. However, the disclosure does not have specific restriction regarding the conductive wires.
In the present embodiment, there is a space (gap), such as an air layer or a vacuum layer, between the first substrate 312 of the first assembly 31 and the fourth substrate 321 of the second assembly 32. The space (gap) can be interposed with a thermal insulating material with low thermal conductivity realized by such as polymer or plastics. Thus, the gap functions as a thermal insulating layer 38, which separates the heating end and the cooling end of two layers (that is, the first assembly 31 and the second assembly 32) of the thermoelectric module and isolates thermal transfer between the two ends. Thus, the thermal transfer between the upper thermal layer and the lower thermal layer is isolated, the temperature difference between the thermal layers is widened during power generation, thereby enhancing the effect of power generation.
Also, the second and fourth substrates 311 and 321 as well as the first and third substrates 312 and 322 possess electrical insulation and high thermal conductivity, and can be made of a ceramic material with high thermal conductivity realized by such as aluminum oxide, aluminum nitride and silicon carbide, or a silicon or metal substrate whose surface is covered with an insulating dielectric layer. However, the disclosure does not have specific restrictions regarding the choice of materials in practical application.
In the embodiment, the p-type thermoelectric elements 314 and 324 and the n-type thermoelectric elements 315 and 325 are made of a semiconductor or a semi-metal element or compound possessing high ZT value, such as bismuth telluride ((BiSb) 2 (TeSe) 3) series, bismuth telluride (Bi2Te3), lead telluride (PbTe) and tin telluride (PbSnTe) series that are doped with antimony and selenium, or compound series such as silicon (Si) and silicon germanium (SiGe) series, half-Heusler dielectric alloy series (a strong magnetic non-iron alloy), silicide, or tungsten diselenide (WSe2) series. Moreover, the thermoelectric elements can be formed by way of sputtering, thermal evaporation, arc ion plating, chemical vapor evaporation, electroplating and chemical plating. However, in practical application, the choice of materials and the ways of formation are determined according to the actual needs and practical conditions, and the disclosure does not have specific restrictions.
The conductors, which electrically connect the p-type thermoelectric elements and the n-type thermoelectric elements, can be realized by the metal conductors 317, 318, 327, and 328 and made of conductive metal such as alloy, or metal with low resistance such as copper (Cu), iron (Fe), chrome (Cr), nickel (Ni), molybdenum (Mo), tin (Sn), silver (Ag), gold (Au) and so on. The first the conductor 35 and the second the conductor 36 can be realized by heat conductive pillars made from metal, alloy or ceramic material with high thermal conductivity. However, in practical application, the choice of material and the shape of the conductors are determined according to actual needs and conditions, and the disclosure does not have specific restrictions.
Referring to
The thermoelectric apparatus 6 of the second embodiment is very similar to the assembly 3 of the first embodiment, except that several thermoelectric material sets are further disposed between the first assembly 31 and the second assembly 32.
As indicated in
In the second embodiment, the thermoelectric apparatus 6 further includes several third thermoelectric material sets 61, disposed vertically between the first substrate 312 of the first assembly 31 and the fourth substrate 321 of the second assembly 32. Similarly, each third thermoelectric material set has a p-type thermoelectric element 614 and an n-type thermoelectric element 615 electrically connected to each other (for example, electrically connected by a conductor 617 via a conductive bonding material 6171). The n-type thermoelectric element of each third thermoelectric material sets 61 can also be electrically connected to the p-type thermoelectric element of the adjacent third thermoelectric material set. In the second embodiment, more layers of thermoelectric devices are stacked. The first heat conductor 34 and the second heat conductor 36 (made of material with high thermal conductivity) directly transfer the heat to the substrate of the thermoelectric module of another layer, thereby maintaining the high and low temperature sides of the thermoelectric module maintain in a sufficient high temperature and low temperature. Accordingly, each layer of thermoelectric module can generate sufficient power, and the power generation capacity is increased through the stacked multi-layer structure of thermoelectric device.
Other elements similar to the first embodiment are not redundantly described here.
An experiment of thermal transfer simulation is conducted for observing the correlations of power generation capacity between the structure of the embodiment and the whole module. In the experiment of thermal transfer simulation, the first implementation of simulation (i.e. the first comparison example) employs a single-layer structure, which is a layer of thermoelectric material set interposed between an upper substrate and a lower substrate. When the high/low temperatures of about 300 and 50 are respectively applied to two substrates, the simulated result of power generation is about 30W.
The second implementation of simulation (i.e. the second comparison example) employs a multi-layer structure, which is the same with the structure of the second embodiment (including four substrates and three layers of thermoelectric material sets) but is lack of the heat conductors 34 and 36. When the temperatures of about 50, 133, 216 and 300 are respectively applied to the second substrate 311, the first substrate 312, the fourth substrate 321 and the third substrate 322 in a bottom-up manner, the simulated result of power generation is merely about 10W.
The third implementation of simulation also employs a multi-layer structure, which is the same with the structure of the second embodiment and also includes the heat conductors 34 and 36. Again, temperatures of about 50, 198, 152 and 300 are applied to the second substrate 311, the first substrate 312, the fourth substrate 321 and the third substrate 322 in order, and the simulated result of power generation is up to about 60W.
According to the simulation results of thermal transfer, the structure of the embodiment really results in the well maintenance of temperature differences between the substrates, thereby increasing the power generation capacity of the whole module. The experiment of assembly of actual module also shows that the module design of the embodiment really widens the temperature differences between the substrates, and boosts the power generation capacity.
A method for fabricating thermoelectric apparatus according to an embodiment of the disclosure is disclosed below. However, the processes of the method are for detailed description only, not for limiting the scope of the disclosure, and anyone who is skilled in the technology of the disclosure can make modification or adjustment to the processes according to actual needs in implementation.
Firstly, a second substrate 711 is provided, wherein at least a first heat conductor 74 and several first thermoelectric material sets 710 are disposed vertically on the second substrate 711, and each first thermoelectric material set 710 has a p-type thermoelectric element 714 and an n-type thermoelectric element 715 as shown in
Thus, a first assembly 71 has been formed by the second substrate 711, the first substrate 712 and several first thermoelectric material sets 710 disposed between the second substrate 711 and the first substrate 712. The p-type thermoelectric element 714 and the n-type thermoelectric element 715 of each first thermoelectric material set 710 are electrically connected by a conductor 717 (via a conductive bonding material 7171). The p-type thermoelectric element 714 and is electrically connected to the n-type thermoelectric element 715 of the adjacent first thermoelectric material set by a conductor 718 (via a conductive bonding material 7181).
Afterwards, a fourth substrate 721 is provided, wherein the fourth substrate 721 at least has a second through hole 721h, the first heat conductor 74 is disposed on the fourth substrate 721, and the second heat conductor 76 passes through the second through hole 721h as shown in
Then, several second thermoelectric material sets 720 are disposed vertically on the fourth substrate 721, wherein each second thermoelectric material set 720 has a p-type thermoelectric element 724 and an n-type thermoelectric element 725 as shown in
Afterwards, a third substrate 722 is disposed on the second thermoelectric material sets 720, wherein one end of the second heat conductor 76 is connected to the third substrate 722 as shown in
After the stacked construction of the first assembly 71 and the second assembly 72 is finished, the method may further include a step of evacuating and vacuum-sealing (not illustrated) to reduce the effect of heat reflow, thereby increasing the reliability of the thermoelectric module.
In the above embodiments, multi-layer thermoelectric module is used for increasing the power generation density of thermoelectric device during power generation, and a heat conductive structure is used for serially connecting the heating ends and the cooling ends of the modules at different layers. Construction of the heat conductor(s) (made of material with high thermal conductivity) and the through hole(s) on the substrate facilitates direct heat transfer between the substrates of the thermoelectric modules of different layers without affecting the temperature at other layers. Therefore, both the high temperature side and the low temperature side of the thermoelectric module respectively maintain the sufficient high and low temperatures, and each layer of thermoelectric module can generate sufficient high electric power. An insulating layer can be formed between the thermoelectric device of an upper layer and the thermoelectric device of a lower layer to avoid the thermal transfer between the two layers. Also, a thermoelectric device can be further disposed to increase power generation density in a practical application. When the stacked thermoelectric structure is combined with a vacuum package, the effect of heat return is reduced and element reliability is increased. The stacked thermoelectric apparatus of the above embodiments is capable of boosting the power generation capacity or the cooling/heating capacity of the thermoelectric device and increasing the efficiency of the thermoelectric apparatus in the application of power generation as well as cooling/heating.
While the disclosure has been described by way of example and in terms of the exemplary embodiment(s), it is to be understood that the disclosure is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
| Number | Date | Country | Kind |
|---|---|---|---|
| 99139248 | Nov 2010 | TW | national |
