Claims
- 1. A fabrication process of a thermoelectric semi-conductor, which comprises the following steps:quenching a molten semiconductor material to obtain plate-shaped semiconductor particles with a-axes thereof oriented in directions of thicknesses thereof; filling said semiconductor particles between metal sheets such that said axes of said semiconductor particles extend perpendicularly to planes in which said metal sheets lie, respectively; compressing said semiconductor particles in a direction perpendicular to said planes such that a semiconductor powder layer is formed between said metal sheets; sintering said semiconductor powder layer and said metal sheets integrally, whereby metal layers obtained from said metal sheets are joined on opposite end faces of a sintered, semiconductor layer obtained from said semiconductor powder layer, respectively; and joining, with an electrode-joining material, said sintered semiconductor layer to electrodes via said metal layers, respectively wherein said metal layers comprise an inhibiting material for inhibiting a reaction between said sintered semiconductor layer and said electrode-joining material.
- 2. A fabrication process according to claim 1, wherein said metal sheets are composed of a metal selected from the group consisting of aluminum and aluminum alloys.
- 3. A fabrication process of a plurality of pairs of thermal electric semiconductors, wherein the fabrication process of each of said plurality of pairs comprises the following steps:guenching a molten semiconductor material to obtain plate-shaped semiconductor particles with a-axes thereof oriented in directions of thicknesses thereof; filling said semiconductor particles between metal sheets such that said axes of said semiconductor particles extend perpendicularly to planes in which said metal sheets lie, respectively; compressing said semiconductor particles in a direction perpendicular to said planes such that a semiconductor powder layer is formed between said metal sheets; sintering said semiconductor powder layer and said metal sheets integrally, whereby metal layers obtained from said metal sheets are joined on opposite end faces of a sintered, semiconductor layer obtained from said semiconductor powder layer, respectively, joining, with an electrode-joining material, said sintered semiconductor layer to electrodes via said metal layers, respectively, wherein said plurality of pairs are stacked one over the other with a spacer interposed therebetween, and are then pressed and sintered concurrently.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-197790 |
Jul 1996 |
JP |
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Parent Case Info
This application is a division of application Ser. No. 08/901,791, filed Jul. 28, 1997 (now U.S. Pat. No. 5,959,341) issued Sep. 28, 1998.
US Referenced Citations (13)