Claims
- 1. In a multilayer, copper-based integrated circuit structure comprising a suitable circuit board having thereon at least two patterned layers of a copper conductor, said layers being separated by a dielectric layer having vias therein, said vias being filled with copper to contact said conductor layers, the improvement wherein the copper conductors comprise on a weight basis:
- (a) from about 75 to about 95 percent of copper powder;
- (b) from about 2 to about 12 percent of a devitrifying glass frit selected from the group consisting of a zinc-calcium-aluminum-silicate glass frit, a zinc-magnesium-barium-aluminum-silicate glass frit and mixtures thereof; and
- (c) from about 1 to about 10 percent of an adhesion promoting oxide selected from the group consisting of bismuth oxide, cadmium oxide, cuprous oxide, thallium oxide, lead oxide and mixtures thereof.
- 2. A circuit structure in accordance with claim 1, wherein the copper conductors comprise, on a weight basis:
- (a) from about 75 to about 95 percent of copper powder;
- (b) from about 2 to about 12 percent of said devitrifying glass fit;
- (c) from about 0.5 to about 6 percent of bismuth oxide; and
- (d) from about 0.5 to about 3.5 percent of cuprous oxide.
- 3. A circuit structure in accordance with claim 2, wherein the devitrifying glass frit is a zinc-calcium-aluminum-silicate glass frit comprising, on a weight basis:
- (a) from about 7 to about 12 percent of zinc oxide;
- (b) from about 25 to about 45 percent of calcium oxide;
- (c) from about 10 to about 20 percent of aluminum oxide;
- (d) from about 35 to about 50 percent of silicon dioxide;
- (e) from 0 to about 2 percent of phosphorus pentoxide; and
- (f) from 0 to about 5 percent of zirconium silicate.
- 4. A circuit structure in accordance with claim 2, wherein the devitrifying glass frit is a zinc-magnesium-barium-aluminum-silicate glass comprising, on a weight basis:
- (a) from about 15 to about 25 percent of zinc oxide;
- (b) from about 10 to about 25 percent of magnesium oxide;
- (c) from about 3 to about 12 percent of barium oxide;
- (d) from about 5 to about 20 percent of aluminum oxide;
- (e) from about 35 to about 50 percent of silicon dioxide;
- (f) from 0 to about 3 percent of phosphorus pentoxide; and
- (g) from 0 to about 5 percent of zirconium silicate.
- 5. A circuit structure in accordance with claim 4, wherein the devitrifying glass frit is a zinc-magnesium-barium-aluminum-silicate glass comprising, on a weight basis:
- (a) from about 16 to about 22 percent of zinc oxide;
- (b) from about 16 to about 22 percent of magnesium oxide;
- (c) from about 5 to about 10 percent of barium oxide;
- (d) from about 8 to about 11 percent of aluminum oxide;
- (e) from about 39 to about 43 percent of silicon dioxide;
- (f) from about 1 to about 2 percent of phosphorus pentoxide; and
- (g) from about 2 to about 3 percent of zirconium silicate.
Government Interests
The U.S. Government has rights in this invention pursuant to Contract No. N00024-82-C-5110 awarded by the Department of the Navy.
US Referenced Citations (23)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0084936 |
Aug 1983 |
EPX |
174544 |
Oct 1984 |
JPX |