Claims
- 1. An aluminum nitride substrate having bonded to at least a portion of one surface thereof a thick film composition, said thick film comprising a glass composition and an electrical property modifier, the addition of said electrical property modifier rendering said thick film composition a resistor, a conductor or a dielectric, said glass composition comprising:
- in weight percent, from about 27.0 to about 56.5 percent silicon dioxide, from about 20 to about 47.0 percent barium oxide, from about 4.5 to about 25.0 percent boron oxide, from about 0 to about 18.0 percent lead oxide, from about 0 to about 15.0 percent zinc oxide, from about 3.0 to about 14.0 percent aluminum oxide, at least a trace amount of zirconium oxide, said zirconium oxide being present up to about 3.0 percent, from about 0 to about 8.0 percent magnesium oxide, from about 0 to about 12.0 percent calcium oxide, from about 0 to about 3.0 percent fluorine, from about 0 to about 3.0 percent potassium oxide, from about 0 to about 3.0 percent sodium oxide, from about 0 to about 4.0 percent tungsten oxide, and from about 0 to about 4.0 percent lithium oxide, wherein barium oxide plus lead oxide is present in an amount at least equal to about 15.0 percent, zinc oxide plus calcium oxide plus aluminum oxide is present in an amount at least equal to about 5.0 percent, calcium oxide plus magnesium oxide plus barium oxide is present in an amount at least equal to about 7.0 percent, calcium oxide plus magnesium oxide plus zirconium oxide is present in an amount at least equal to about 1.0 percent, zirconium oxide plus calcium oxide plus barium oxide is present in an amount at least equal to about 7.0 percent, potassium oxide plus sodium oxide plus lead oxide or barium oxide is present in an amount at least equal to 10.0 percent.
- 2. The aluminum nitride substrate of claim 1 wherein said glass composition includes:
- ______________________________________ Compositional RangeComponent (in weight percent)______________________________________SiO.sub.2 37-56.5B.sub.2 O.sub.3 4-14PbO 0-18ZnO 0-12.2Al.sub.2 O.sub.3 3-10MgO 0-6CaO 0-8F.sub.2 0-3K.sub.2 O 0-3Na.sub.2 O 0-3Li.sub.2 O 0-3.______________________________________
- 3. The aluminum nitride substrate of claim 1 wherein said glass composition includes:
- ______________________________________ Compositional RangeComponent (in weight percent)______________________________________SiO.sub.2 38-45B.sub.2 O.sub.3 7-14PbO 0-17ZnO 5-12.2Al.sub.2 O.sub.3 3-8MgO 0-6CaO 0-7F.sub.2 0-3Li.sub.2 O 0-3.______________________________________
- 4. The aluminum nitride substrate of claim 1 wherein said glass composition includes:
- ______________________________________ Compositional RangeComponent (in weight percent)______________________________________SiO.sub.2 28-45B.sub.2 O.sub.3 7-20Al.sub.2 O.sub.3 2-14MgO 0-8WO.sub.3 0-4.______________________________________
- 5. The aluminum nitride substrate of claim 1 wherein said electrical property modifier is a material which renders said thick film composition electrically conductive.
- 6. The aluminum nitride substrate of claim 1 wherein said glass composition includes:
- ______________________________________ Compositional RangeComponent (in weight percent)______________________________________SiO.sub.2 28.4B.sub.2 O.sub.3 19.2BaO 39.2Al.sub.2 O.sub.3 8.6ZrO.sub.2 1.6WO.sub.3 3.0.______________________________________
- 7. The aluminum nitride substrate of claim 1 wherein said electrical property modifier component is a material which renders said composition a dielectric.
- 8. The aluminum nitride substrate of claim 8 wherein said glass composition includes:
- ______________________________________ Compositional RangeComponent (in weight percent)______________________________________SiO.sub.2 38.9BaO 23.9B.sub.2 O.sub.3 13.4ZnO 12.0Al.sub.2 O.sub.3 5.0ZrO.sub.2 1.5MgO 5.3.______________________________________
- 9. The aluminum nitride substrate of claim 1 wherein said electrical property modifier is a material which renders said thick film composition a resistor.
- 10. The aluminum nitride substrate of claim 9 wherein said glass composition includes:
- ______________________________________ Compositional RangeComponent (in weight percent)______________________________________SiO.sub.2 28.4B.sub.2 O.sub.3 19.2BaO 39.2Al.sub.2 O.sub.3 8.6ZrO.sub.2 1.6WO.sub.3 3.0.______________________________________
Parent Case Info
This is a continuation of U.S. Ser. No. 07/620,437, filed Nov. 30, 1990, now abandoned, which is a divisional of U.S. Ser. No. 07/091,080, filed Aug. 31, 1987, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0132810 |
Feb 1985 |
EPX |
0153737 |
Sep 1985 |
EPX |
1251766 |
Oct 1971 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Taylor et al., "Ceramics Glaze Technology," Pergamon Press, pp. 127, 140-141 and 196. |
Divisions (1)
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Number |
Date |
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Parent |
91080 |
Aug 1987 |
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Continuations (1)
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Number |
Date |
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Parent |
620437 |
Nov 1990 |
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