Thin-film device and method of manufacturing same

Abstract

A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer incorporates: an electrode film; a first layer formed on the electrode film by electroplating; and a second layer formed on the first layer by PVD or CVD. The grain diameter of a metallic crystal of the second layer is smaller than that of the first layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a thin-film device of an embodiment of the invention.

FIG. 2 is a cross-sectional view illustrating a step of a method of manufacturing the thin-film device of the embodiment of the invention.

FIG. 3 is a cross-sectional view illustrating a step that follows the step of FIG. 2.

FIG. 4 is a cross-sectional view illustrating a step that follows the step of FIG. 3.

FIG. 5 is a cross-sectional view illustrating a step that follows the step of FIG. 4.

FIG. 6 is a cross-sectional view illustrating a step that follows the step of FIG. 5.

FIG. 7 is a cross-sectional view illustrating a step that follows the step of FIG. 6.

FIG. 8 is a cross-sectional view illustrating a step that follows the step of FIG. 7.

FIG. 9 is a cross-sectional view illustrating a step that follows the step of FIG. 8.

FIG. 10 is a cross-sectional view illustrating a step that follows the step of FIG. 9.

FIG. 11 is a cross-sectional view illustrating a step that follows the step of FIG. 10.

FIG. 12 is a cross-sectional view illustrating an example of configuration of a thin-film device comprising a capacitor.

Claims

1. A thin-film device comprising: a lower conductor layer;a dielectric film disposed on the lower conductor layer; andan upper conductor layer disposed on the dielectric film, wherein:the lower conductor layer incorporates: a first layer made of a metal; and a second layer made of a metal and disposed between the first layer and the dielectric film; anda grain diameter of a metallic crystal of the second layer is smaller than that of the first layer.

2. The thin-film device according to claim 1, wherein a surface roughness in maximum height of a top surface of the second layer is smaller than that of a top surface of the first layer.

3. The thin-film device according to claim 1, wherein the dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive.

4. The thin-film device according to claim 1, wherein the metal forming the first layer contains any of Cu, Ag and Al, and the metal forming the second layer contains any of Cu, Ag, Al, Cr, Ti, Ni, Ni—Cr and Au.

5. The thin-film device according to claim 1, wherein the lower conductor layer, the dielectric film and the upper conductor layer constitute a capacitor.

6. A method of manufacturing a thin-film device comprising a lower conductor layer, a dielectric film disposed on the lower conductor layer, and an upper conductor layer disposed on the dielectric film, wherein: the lower conductor layer incorporates a first layer made of a metal and a second layer made of a metal and disposed between the first layer and the dielectric film, the method comprising the steps of forming the first layer by electroplating;forming the second layer on the first layer by physical vapor deposition or chemical vapor deposition;forming the dielectric film on the second layer; andforming the upper conductor layer on the dielectric film.

7. The method according to claim 6, wherein a grain diameter of a metallic crystal of the second layer is smaller than that of the first layer.

8. The method according to claim 6, wherein a surface roughness in maximum height of a top surface of the second layer is smaller than that of a top surface of the first layer.

9. The method according to claim 6, wherein the dielectric film has a thickness that falls within a range of 0.02 to 1 μm inclusive.

10. The method according to claim 6, wherein the metal forming the first layer contains any of Cu, Ag and Al, and the metal forming the second layer contains any of Cu, Ag, Al, Cr, Ti, Ni, Ni—Cr and Au.

11. The method according to claim 6, wherein the lower conductor layer, the dielectric film and the upper conductor layer constitute a capacitor.