1. Technical Field
The present invention relates to a thin film device having a thin film body such as a thin film element (for example, a thin film transistor), a method of manufacturing the same, and an electronic apparatus including the thin film device.
2. Related Art
A thin film device that is provided with a thin film element and the like on a substrate is known and is used for various applications. Examples of the substrate that constitutes such a thin film device include a silicon wafer, a glass substrate, a resin film, a metal substrate, and the like. When a resin film is used as a substrate or when one of a metal substrate, a glass substrate, a silicon wafer and the like that are formed by thinning the thickness thereof is used as a substrate, the substrate has flexibility. For this reason, a thin film device which has flexibility and light weight can be provided. The use of the thin film device with such characteristics can realize a display device, which is so called, for example, a flexible display (for example, an electronic paper and the like).
There are several examples in methods of manufacturing the thin film device. Specifically, there have been suggested the following methods: (1) a method of directly forming a thin film element on a substrate; (2) a method which uses a transferring technique of forming a thin film element on a glass substrate of high heat-resistance at first, and adhering (bonding) the thin film element to a substrate such as a resin film by separating (peeling) the thin film element from the glass substrate (see JP-A-10-125929 and JP-A-10-125930, for example); and (3) a method of forming a thin film element on one side of a glass substrate of high heat-resistance, thinning the other side of the glass substrate by grinding or etching, and then adhering (bonding) the thinned glass substrate and the thin film element onto another substrate such as a resin film.
When deformation such as bending of a thin film device occurs, a bending stress is generated in a thin film element. Generally, since a great stress may be generated even with a small deformation in a thin film layer having an elastic constant of several tens GPa, the thin film element may be fractured by the stress resulting from deformation such as bending. This vulnerability is all the more noticeable in a flexible thin film element. Particularly, there is a case where a fine crack or notch exists at the edge of the thin film element due to cutting performed in a manufacturing process. In a spot with the crack or notch, the fracture can occure because an enormous stress is locally generated with ease when the elastic limit of a material itself is noticeably lowered and the stress is concentrated.
With regard to such a point, JP-A-2006-303166 suggests a technique of resolving the vulnerability without forming an inorganic insulating film in a cut region where a number of thin film devices that have been formed in advance are cut into individual pieces when the thin film devices are manufactured by using the transferring technique. However, in that case where the thin film device is manufactured by using the related art, when a thin film element that has been formed on a first substrate in advance is transferred onto a second substrate, the edges of the thin film element (particularly, the four corners thereof) may often be fractured without being normally peeled from the first substrate. In addition, the edges of the thin film element (particularly, the four corners thereof) are susceptible to fracture during use of the thin film device, whether or not the above-described transferring technique has been employed. For this reason, there is a demand for a new technique of suppressing damage on the thin film element during the manufacture or use of the thin film device.
An advantage of some aspects of the invention is that it provides a technique of suppressing damage on a thin film element during the manufacture or use of a thin film device.
According to a first aspect of the invention, there is provided a method of manufacturing a thin film device which includes a thin film body and a substrate supporting the thin film body. The method includes forming a thin film body on a first substrate, bonding the thin film body to a second substrate, and transferring the thin film body onto the second substrate by detaching the first substrate from the thin film body. In the method, the thin film body has a plurality of corners in a top view and at least one corner of the plurality of corners is chamfered and the first substrate is peeled off from a portion where the one corner contacts therewith, during the transferring of the thin film body.
In the present specification, the “thin film body” refers to, for example, a thin film diode, a photoelectric conversion element (a photo-sensor, or a solar cell) formed of a PIN junction of silicon, a silicon resistive element, other thin film semiconductor devices, an electrode (for example, a transparent electrode such as an ITO, a mesa layer, and the like), a switching element, a memory, an actuator such as piezoelectric element, a micromirror (piezo thin-film ceramics), a thin-film magnetic recording head, a coil, an inductor, a thin-film high-permeability magnetic material and a micro magnetic device combining therewith, a filter, a reflective film, a dichroic mirror and the like, in addition to a thin film transistor. Such a thin film element (thin film device) is generally formed at a relatively high processing temperature in the forming method.
According to the above-described aspect of the manufacturing method, at least one corner of the plurality of corners is chamfered, and the first substrate is peeled from the corner. Therefore, a physical impact on the corner applied during the manufacture is alleviated and damage on the thin film element included in the thin film body can be suppressed.
According to the aspect of the manufacturing method, it is preferable that the one corner of the thin film body has a projection protruding outward from the thin film body in a top view.
By providing the projection, it is possible to enhance the effect of alleviating the impact on the corner when the first substrate is peeled off from the thin film body.
According to the aspect of the manufacturing method, the plurality of corners of the thin film body all may be chamfered.
Accordingly, it is possible to alleviate the impact on the corner of the thin film body and to enhance the effect of suppressing damage.
According to a second aspect of the invention, there is provided a thin film device including a substrate, and a thin film body provided on one side of the substrate. In the thin film device, the thin film body has a plurality of corners in a top view and at least one corner of the plurality of corners is chamfered.
According to the above-described aspect of the thin film device, the thin film body has at least one corner which is chamfered. Therefore, it is possible to alleviate a physical impact on the corner during the use of the thin film device and to suppress damage on the thin film element included in the thin film body.
According to the above-described aspect, an adhesive layer may be provided between the substrate and the thin film body. In other words, the substrate and the thin film body may be bonded via the adhesive layer interposed therebetween.
According to the above-described aspect, the one corner of the thin film body may include a projection protruding outward from the thin film body in a top view.
By providing the projection, it is possible to further enhance the effect of alleviating the impact on the corner when the first substrate is peeled off from the thin film body.
According to the above-described aspect, the plurality of corners of the thin film body all may be chamfered.
Accordingly, it is possible to alleviate the impact on the corner of the thin film body and to enhance the effect of suppressing damage.
According to a third aspect of the invention, an electronic apparatus is configured to include the thin film device according to the invention. Specifically, the electronic apparatus according to the invention is provided with, for example, a display device such as a liquid crystal device using the above-described thin film device as a display section. Here, the “electronic apparatus” includes a display device, a television set, an electronic paper, a watch, a calculator, a mobile phone, a portable information terminal, and the like.
The invention will be described with reference to the accompanying drawings, wherein like numbers reference like elements.
Hereinafter, an exemplary embodiment of the invention will be explained in detail with reference to the accompanying drawings.
As shown in
At first, a thin film element layer 13 having a number of the thin film bodies 15 is formed on the first substrate 11 as an original transfer substrate via a peeling layer 12 interposed therebetween (see
Here, the first substrate 11 is preferably formed of a material with high reliability. Particularly, it is preferable that the material have excellent heat resistance. The reason is as follows; a processing temperature gets higher sometimes (for example, from about 350° C. to about 1000° C.) depending on the kind of the material or the forming method when the peeling layer 12 and the thin film element layer 13 are formed. Specifically, it is preferable that a deformation point of the constituting material of the first substrate 11 is higher than 350° C., and it is more preferable that the deformation point is higher than 500° C.
The peeling layer 12 absorbs light irradiated thereon, and has a property that peeling occurs in at least one of the inside of the layer or the interface thereof. As an example of the peeling layer 12, an amorphous silicon film may be preferably used. The thin film element layer 13 is configured to include the above-described thin film body 15 having a thin film element such as a thin film transistor.
Next, as shown in
Next, as shown in
It is presumed that the peeling occurs in the peeling layer 12 because ablation occurs in the constituting material of the peeling layer 12, gas contained in the peeling layer 12 is discharged, or a phase-change such as melting, transpiration or the like occurs right after the irradiation of the light. Here, the ablation means that an anchoring material (constituting material of the peeling layer 12) that absorbed the irradiated light is photochemically or thermally excited, and thereby the bond between atoms or molecules on the surface of or inside the material is severed in order to discharge the atoms or molecules. Generally, the ablation occurs as a phenomenon where all or part of the constituting material of the peeling layer 12 shows a phase-change such as melting, transpiration (vaporization), or the like. Furthermore, the material is in a state of microscopic foam due to the phase-change, thereby the bonding force deteriorates. Examples of the irradiated light may be any thing that causes peeling in the peeling layer 12, such as X-rays, ultraviolet rays, visible light, infrared rays (heat rays), laser light, millimeter waves, micro waves, electron beams, radioactive rays (α-rays, β-rays, and γ-rays), and the like. Among these, the laser light is preferable in that it easily causes ablation of the peeling layer 12.
When all or part of the peeling layer 12 remains on the thin film element layer 13, the peeling layer 12 may be removed by methods of, for example, cleaning, etching, ashing, grinding, and the like, or a combined method thereof.
Next, as shown in
Next, as shown in
Thereafter, each thin film body 15 can be obtained by cutting out the thin film body 15 in the boundary region 14 with a method such as dicing. Because the inorganic material layer is removed in the boundary region 14 as described above, it is possible to avoid any crack on a cut face. Consequently, the fracture of the thin film body 15 can be prevented.
Next, specific examples of an electronic apparatus that includes the above-described thin film device will be described.
According to the above-described embodiment, since at lease one of the corners of the thin film body is chamfered, it is possible to alleviate a physical impact on the corner during the manufacture or use of the thin film device, thereby damage on the thin film element included in the thin film body can be suppressed.
The invention is not limited to the above-described embodiment, but may be modified in various ways within the scope or intention of the invention. For example, in the above-described embodiment, the use of the transferring technique is explained as a preferable example of the method of manufacturing a thin film body, but the manufacturing method of the thin film body is not limited thereto. In addition, in the above-described embodiment, a case where a thin film device is used as a constituting element of a display device was exemplified, but the application of the thin film device is not limited thereto.
The entire disclosure of Japanese Patent Application No. 2008-316850, filed Dec. 12, 2008 is expressly incorporated by reference herein.
Number | Date | Country | Kind |
---|---|---|---|
2008-316850 | Dec 2008 | JP | national |