Claims
- 1. A method of manufacturing a thin film transistor comprising:a substrate, a gate electrode formed on said substrate; an insulating film formed on said gate electrode and said substrate except for whole of outer surface of said gate electrode, a semiconductor film formed on said insulating film, a source electrode connected to said semiconductor film, and a drain electrode connected to said semiconductor film, wherein at least one of said gate electrode, said source electrode, and said drain electrode, is composed of one material, and the method of manufacturing comprises the steps of: (a) changing an etching rate of said at least one electrode in a direction perpendicular to a top surface thereof by changing deposition conditions during a deposition step, and (b) etching said at least one electrode such that it is trapezoidal in its section; wherein said changing step includes either (i) changing a deposition pressure, (ii) changing a deposition power, (iii) changing a deposition temperature, (iv) changing a partial pressure of nitrogen gas relative to argon gas of a deposition gas stream, or (v) doping a deposition gas stream with phosphorous ions.
- 2. The method of manufacturing the TFT of claim 1 further comprising the step of forming said at least one electrode using a sputtering method, wherein said prescribed physical property is changed by changing the deposition pressure in a range of 0.14 Pa to 1.4 Pa.
- 3. The method of manufacturing the TFT of claim 1 further comprising the step of forming said at least one electrode using a sputtering method, wherein said prescribed physical property is changed by changing the deposition power density in a range of 0.25 W/cm2 to 2.5 W/cm2.
- 4. The method of manufacturing the TFT of claim 1 further comprising the step of forming said at least one electrode using a sputtering method, wherein said prescribed physical property is changed by changing the deposition temperature in a range of 25° C. to 250° C.
- 5. The method of manufacturing the TFT of claim 1 further comprising the step of forming said at least one electrode using a sputtering method, wherein said prescribed physical property is changed by changing the partial pressure of nitrogen gas in a range of 0.01 Pa to 0.14 Pa.
- 6. The method of manufacturing the TFT of claim 1 wherein said deposition gas stream further comprises oxygen gas and further comprising the step of forming said at least one electrode using a sputtering method, said prescribed physical property is changed by changing the partial pressure of oxygen gas in a range of 0.01 Pa to 0.14 Pa.
- 7. The method of manufacturing the TFT of claim 1 further comprising the step of forming said at least one electrode using a sputtering method, wherein after depositing said at least one electrode, the phosphorous ion is doped so that said prescribed physical property of a surface of said at least one electrode is changed and an etching rate of said at least one electrode is changed.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9/142247 |
May 1997 |
JP |
|
Parent Case Info
This application is a continuation of Ser. No. 08/922,099 filed Sep. 2, 1997 now U.S. Pat. No. 5,826,969.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4842372 |
Toyama |
Jun 1989 |
A |
5905274 |
Ahn et al. |
May 1999 |
A |
Foreign Referenced Citations (2)
Number |
Date |
Country |
61-168960 |
Jul 1986 |
JP |
7-86230 |
Mar 1995 |
JP |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/922099 |
Sep 1997 |
US |
Child |
09/645981 |
|
US |