Claims
- 1. A titanium disulfide film fabricated by chemical vapor deposition on a substrate, which comprises crystallites of titanium disulfide each being oriented at an angle of its c-axis to the substrate surface of not more than 45.degree. on average.
- 2. A titanium disulfide film according to claim 1, wherein the titanium disulfide film has a film density of 70% or higher.
- 3. A process for fabricating a titanium disulfide film on a substrate, which comprises forming a titanium disulfide film in which crystallites of titanium disulfide are oriented at an angle of their c-axis to the substrate surface of not more than 45.degree. on average on a substrate from titanium tetrachloride and hydrogen sulfide as source gases by chemical vapor deposition under an inner pressure of a reaction system, for forming the titanium disulfide, of 30 kPa or less and at a substrate temperature of 350.degree.-650.degree. C.
- 4. A process according to claim 3, wherein a concentration ratio of the hydrogen sulfide to the titanium tetrachloride is in a range of 3-20.
- 5. A process according to claim 3, wherein He or Ar is used as a carrier gas for the titanium tetrachloride and the hydrogen sulfide.
- 6. A process according to claim 3, wherein the substrate temperature is in a range of 420.degree.-600.degree. C.
- 7. A titanium disulfide film according to claim 1, wherein the titanium disulfide film has a thickness of from 1 .mu.m to at least 10 .mu.m and flatness such that a difference in the level on a surface of the film must be less than 0.5 .mu.m from the level of an average film thickness.
- 8. A titanium disulfide film according to claim 1, wherein the substrate is made of a material selected from the group consisting of quartz, silicon and alumina.
- 9. A process according to claim 3, wherein said reaction system comprises a reaction tube in which the substrate is located and a mixture of the source gases is introduced into the reaction tube to effect chemical vapor deposition of the titanium disulfide film onto the substrate heated to said substrate temperature.
- 10. A process according to claim 9, wherein the mixture of titanium tetrachloride and hydrogen sulfide source gases has a concentration ratio of H.sub.2 S/TiCl.sub.4 of from 3 to 20.
- 11. A titanium disulfide film according to claim 1, wherein the crystallites in the titanium disulfide film are oriented to an angle of their c-axis to the substrate surface of not more than 30.degree..
- 12. A process according to claim 4, wherein He or Ar is used as a carrier gas for the titanium tetrachloride and the hydrogen sulfide.
- 13. A titanium disulfide film according to claim 1, wherein each of said crystallites are of a size such that it extends from the substrate surface to the film surface.
- 14. A process according to claim 3, wherein the inner pressure of the reaction system is 1.5 kPa or less.
- 15. A titanium disulfide film fabricated on a substrate according to claim 8, wherein said substrate is made of silicon.
Priority Claims (1)
Number |
Date |
Country |
Kind |
57-158123 |
Sep 1982 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 531,706 filed Sept. 13, 1983, now abandoned.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
Pessa et al., "Characterization of Surface Exchange Readings Used to Grow Compound Films", Appl. Phys. Lett., vol. 38, pp. 131-132, Feb. 1981. |
Continuations (1)
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Number |
Date |
Country |
Parent |
531706 |
Sep 1983 |
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