1. Field of the Invention
The present invention generally relates to a laser-assisted transfer system and, more particularly, to a laser-assisted transfer system capable of transferring a large-area pattern on an organic substrate to enhance the pattern transfer performance.
2. Description of the Prior Art
Laser assisted pattern transfer technology has been widely used in many industries. However, there are some issues such as:
1. The repetition rate of the excimer laser is too low (lower than 300 Hz);
2. The Nd-Yag laser beam is Gaussian distributed, which results in a small transfer area;
3. The UV laser destroys organic thin films;
4. The moving speed is lower than 0.2 m/s when a platform is shifted to change the transfer position;
5. The scanned area for the single-point transfer technique is 0.25×0.25 cm2, which results in low speed and is not suitable for large-area pattern transfer.
In U.S. Pat. No. 4,970,196 “Method and apparatus for the thin film deposition of materials with a high power pulsed laser”, a laser assisted pattern transfer technique for metal materials (such as copper, silver, aluminum, platinum and chromium) or non-metal materials (such as ceramic) is disclosed. In U.S. Pat. No. 5,173,441 “Laser ablation deposition process for semiconductor manufacture”, a laser assisted pattern transfer technique for metal materials is disclosed for semiconductor processing. In both of these two patents, the excimer laser is used to perform pattern transfer in a vacuum chamber or a chamber with specific gas. These two patents have problems as stated above.
Concerning organic light emitting diode (OLED) processing, patterned metal layers are required to be formed on organic thin films. Since organic thin films are not resistant to chemical solutions, dry processing is used such as thermal evaporation, inkjet printing, and laser assisted transfer. However, there are still problems such as unavailability in large-area transfer, poor precision, and difficulty in preparation of transfer thin films. Even though laser assisted transfer results in high precision, the organic thin film is easily destroyed by laser beams.
It is an object of the present invention to provide to a laser-assisted transfer system capable of transferring a large-area pattern on an organic substrate to enhance the pattern transfer performance.
In order to achieve the foregoing object, the present invention provides a laser-assisted transfer system, comprising: a laser source, capable of generating a multimode laser beam; a beam transformer, capable of transforming the multimode laser beam into a rectangular beam; a scanner module, capable of scanning the rectangular beam to form a scanning laser beam; and a transfer component, capable of receiving the scanning laser beam to generate a transfer pattern.
In order to achieve the foregoing object, the present invention further provides a transfer component, comprising: a metal thin film, capable of receiving a laser beam to partially ablate the metal thin film; and an organic thin film, being disposed under the metal thin film to receive the partially ablated metal thin film and form a transfer pattern.
The objects, spirits and advantages of the preferred embodiments of the present invention will be readily understood by the accompanying drawings and detailed descriptions, wherein:
The present invention can be exemplified but not limited by the preferred embodiments as described hereinafter.
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The laser source 10 is capable of generating a multimode laser beam L1. The wavelength of the multimode laser beam L1 is at least 400 nm. The beam transformer 20 comprises a beam homogenizer 21 and a beam shaper 22. Preferably, the beam homogenizer 21 and the beam shaper 22 can be integrated as a module. The beam homogenizer 21 is capable of flat-topping the multimode laser beam L1. The beam shaper 22 is capable of shaping the flat-topped multimode laser beam L2 into a rectangular beam L3. The beam shaper 22 is capable of adjusting the size of the rectangular beam.
Moreover, the scanner module 30 scans the rectangular beam L3 to form a scanning laser beam L4 with a large cross-sectional area. The scanner module 30 comprises an X-axis oscillating mirror 31 and a Y-axis oscillating mirror 32, which are perpendicular. The X-axis oscillating mirror 31 and the Y-axis oscillating mirror 32 are driven by motors 311 and 321, respectively, to oscillate and scan horizontally and vertically. After the Y-axis oscillating mirror 32 receives the rectangular beam L3, the rectangular beam L3 is reflected to the X-axis oscillating mirror 31, which generates the scanning laser beam L4 with a large cross-sectional area to be incident on the transfer component 40. The scanner module 30 is programmable so as to programmably control the multimode laser beam. Moreover, the scanner module 30 can be installed on a positioning platform (not shown) to perform focus compensation during scanning.
The transfer component 40 comprises a conductive thin film 41 and an insulating thin film 42. The conductive thin film 41 is supported and positioned by a platform 43. The insulating thin film 42 is disposed on a carrier 421. In the present embodiment, a stainless steel washer 44 is disposed between the conductive thin film 41 and the insulating thin film 42 to form a gap D to separate the conductive thin film 41 and the insulating thin film 42. The gap D is between 5 μm to 100 μm. Experimentally, the wider the gap, the larger the transfer area. Alternatively, it is feasible that the conductive thin film 41 and the insulating thin film 42 contact each other without disposing a washer to form a gap therebetween. In other words, the conductive thin film 41 and insulating thin film 42 can be implemented according to practical use.
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Accordingly, the transfer component and the laser-assisted transfer system using the same disclosed in the present invention can be used to achieve large-area pattern transfer and enhance the performance. The disclosure of the present invention is suitable for use in pattern transfer onto an organic thin film when a multimode laser beam is used.
Therefore, the present invention has advantages over the prior art references such as:
1. From a view of speed, the repetition rate of the conventional excimer laser is lower than 300 Hz. It requires a platform to change the transfer position with a slow moving speed lower than 0.2 m/s. In the present invention, a multimode laser is used with a repetition rate of 3˜50 KHz and the scanning speed of the scanner is 1.0 m/s. In other words, the repetition rate of the present invention is at least 10 times the repetition rate of the prior art and the scanning speed is at least 5 times the scanning speed of the prior art.
2. From a view of area, the scanned area for the single-point transfer technique is smaller than 0.25×0.25 cm2, while the scanned area of the present invention is 5×5 cm2, which is 400 times the scanned area of the prior art.
3. From a view of precision, the pattern transfer is not available onto an organic thin film while the scanner module of the present invention exhibits a precision of 10 μm when a mask is used.
Moreover,
Although this invention has been disclosed and illustrated with reference to particular embodiments, the principles involved are susceptible for use in numerous other embodiments that will be apparent to persons skilled in the art. This invention is, therefore, to be limited only as indicated by the scope of the appended claims.
Number | Date | Country | Kind |
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096144023 | Nov 2007 | TW | national |