Claims
- 1. A transistor comprising:a gate dielectric arranged on a base of a trench, the trench having substantially vertical sidewalls and arranged within a semiconductor substrate, wherein the gate dielectric extends laterally to the vertical trench sidewalls; a gate conductor arranged on an upper surface of the gate dielectric, wherein the gate conductor does not extend laterally to the vertical trench sidewalls, wherein an uppermost surface of the gate dielectric and a lower surface of the gate conductor are substantially below an upper surface of the semiconductor substrate, and wherein an upper surface of the gate conductor is substantially above the upper surface of the semiconductor substrate; and junction regions formed adjacent to the gate conductor.
- 2. The transistor of claim 1, wherein the gate dielectric comprises thermally grown silicon dioxide.
- 3. The transistor of claim 1, wherein the semiconductor substrate comprises single crystalline silicon.
- 4. The transistor of claim 1, wherein the gate conductor comprises doped polysilicon.
- 5. The transistor of claim 1, further comprising silicide layers arranged upon an upper surface of the gate conductor and a portion of the junction regions.
- 6. The transistor of claim 1, wherein the gate conductor has a substantially rectangular cross-section.
- 7. The transistor of claim 1, further comprising spacer structures extending laterally from sidewall surfaces of the gate conductor.
- 8. The transistor of claim 7, wherein the junction regions comprise:a pair of lightly doped drain areas residing within the semiconductor substrate exclusively, in a region directly below the spacer structures; and source/drain regions residing within the semiconductor substrate laterally adjacent to the lightly doped drain areas, wherein the source/drain regions extend from the upper surface of the semiconductor substrate to a position substantially below a lower depth of the lightly doped drain areas.
Parent Case Info
This is a Division of application Ser. No. 09/078,828, filed May 14, 1998 now abandoned.
US Referenced Citations (9)
Foreign Referenced Citations (1)
Number |
Date |
Country |
4-215479 |
Aug 1992 |
JP |