using self aligned silicidation

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H01L29/665

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/665using self aligned silicidation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,230,548
- Issue date Feb 18, 2025
- Mitsubishi Electric Corporation
- Yuri Kunishige
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with recessed top semiconductor layer in su...
- Patent number 12,230,720
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional device formation using early removal of sacrifici...
- Patent number 12,230,691
- Issue date Feb 18, 2025
- Applied Materials, Inc.
- Yan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 12,230,509
- Issue date Feb 18, 2025
- United Microelectronics Corp.
- Ming Thai Chai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including dummy gate dielectric layer and met...
- Patent number 12,230,545
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned inner spacer on gate-all-around structure and methods...
- Patent number 12,230,692
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tsungyu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric fin structure
- Patent number 12,230,712
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure including multi-width semiconductor fins
- Patent number 12,230,633
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet device with tri-layer bottom dielectric isolation
- Patent number 12,230,676
- Issue date Feb 18, 2025
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and manufacturing method of the same
- Patent number 12,230,709
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tung-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer formation for nano-scale semiconductor devices
- Patent number 12,224,203
- Issue date Feb 11, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device
- Patent number 12,224,213
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,315
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device including multiple channel layers w...
- Patent number 12,224,357
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Jinyeong Joe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,224,348
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing methods of the same
- Patent number 12,225,725
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- So Hyeon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for low inductance phase switch for inverter fo...
- Patent number 12,225,696
- Issue date Feb 11, 2025
- BorgWarner US Technologies LLC
- Mark Wendell Gose
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,224,325
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,224,335
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Ching-Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for adaptive gate driver for inverter for elect...
- Patent number 12,220,992
- Issue date Feb 11, 2025
- BorgWarner US Technologies LLC
- Seyed R. Zarabadi
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with gate dielectric formed using selective de...
- Patent number 12,224,334
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tung-Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and poly gate
- Patent number 12,217,975
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D-channel transistor structure with source-drain engineering
- Patent number 12,218,205
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for providing line end extensions for fin-type...
- Patent number 12,218,239
- Issue date Feb 4, 2025
- Mosaid Technologies Incorporated
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of FinFET devices and methods of forming same
- Patent number 12,218,240
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation between gate spacer and epitaxy structure
- Patent number 12,218,138
- Issue date Feb 4, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FURNACE INNER TUBE FOR PROCESS UNIFORMITY
- Publication number 20250062139
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063727
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Minhee CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- Publication number 20250063736
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sai-Hooi Yeong
- G11 - INFORMATION STORAGE
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063808
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KUAN-TING PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063777
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20250063773
- Publication date Feb 20, 2025
- LX Semicon Co., Ltd.
- Jin Ok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME
- Publication number 20250063778
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS
- Publication number 20250063779
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063789
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiang SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063810
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lung TUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BIT LINE
- Publication number 20250063725
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Jongmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE
- Publication number 20250056849
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250056868
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056894
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- YUNG-CHIH TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250056782
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tao CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MEMORY DEVICES
- Publication number 20250056801
- Publication date Feb 13, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhong ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20250056835
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAYS AND METHODS USED IN FORMING A MEMORY ARRAY COMPRISING...
- Publication number 20250056800
- Publication date Feb 13, 2025
- Lodestar Licensing Group LLC
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING FIN-THINNING THROUGH FEEDBACK
- Publication number 20250056823
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsu-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS

using self aligned silicidation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Semiconductor structure with recessed top semiconductor layer in su...

Three dimensional device formation using early removal of sacrifici...

Method for fabricating semiconductor device

Semiconductor devices including dummy gate dielectric layer and met...

Self-aligned inner spacer on gate-all-around structure and methods...

Dielectric fin structure

Integrated circuit structure including multi-width semiconductor fins

Nanosheet device with tri-layer bottom dielectric isolation

Transistor structure and manufacturing method of the same

Stacked transistors with different channel widths

Air gap spacer formation for nano-scale semiconductor devices

Manufacturing method of semiconductor device using gate-through imp...

High voltage device

Semiconductor device

Semiconductor transistor device including multiple channel layers w...

Semiconductor device structure and method for forming the same

Semiconductor devices and manufacturing methods of the same

Systems and methods for low inductance phase switch for inverter fo...

Semiconductor device and manufacturing method thereof

Semiconductor device and fabrication method thereof

Systems and methods for adaptive gate driver for inverter for elect...

Contact architecture for capacitance reduction and satisfactory con...

Semiconductor device with gate dielectric formed using selective de...

Semiconductor device having metal gate and poly gate

2D-channel transistor structure with source-drain engineering

Contacts for semiconductor devices and methods of forming the same

Structure and method for providing line end extensions for fin-type...

Source/drain regions of FinFET devices and methods of forming same

Air gap formation between gate spacer and epitaxy structure

Patents Applicationslast 30 patents

FURNACE INNER TUBE FOR PROCESS UNIFORMITY

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR DEVICE

THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE AND POWER CONVERTER

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME

DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE INCLUDING BIT LINE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

WORK FUNCTION METAL PATTERNING AND GATE CUT FOR NANOSHEET DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

VERTICAL MEMORY DEVICES

INTEGRATED CIRCUIT STRUCTURE

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

MEMORY ARRAYS AND METHODS USED IN FORMING A MEMORY ARRAY COMPRISING...

CONTROLLING FIN-THINNING THROUGH FEEDBACK