Claims
- 1. A transparent conductive film having a transparent oxide layer and a metal layer laminated in this order from a substrate side in a total of (2n+1) layers, wherein n is an integer of at least 1, wherein the transparent oxide layer comprises ZnO and further contains In within a range of from about 9 to 98 atomic % based on the sum of Zn and In, and wherein the metal layer is a metal layer containing Ag.
- 2. The transparent conductive film according to claim 1, wherein at least one of the transparent oxide layers is a layer made of a multi-layer film comprising film(s) containing In2O3 as the main component and film(s) containing ZnO as the main component.
- 3. The transparent conductive film according to claim 1, wherein the transparent oxide layer farthest from the substrate is a layer made of a multi-layer film comprising film(s) containing In2O3 as the main component and film(s) containing ZnO as the main component, said multi-layer film having layers laminated so that their In contents increase as they are located farther from the substrate.
- 4. The transparent conductive film according to claim 1, wherein the transparent oxide layer nearest to the substrate is a layer made of a multi-layer film comprising film(s) containing In2O3 as the main component and film(s) containing ZnO as the main component, said multi-layer film having films laminated so that their In contents increase as they are located nearer to the substrate.
- 5. The transparent conductive film according to claim 1, wherein at least one of the transparent oxide layers is a layer comprising a mixed oxide of In2O3 and ZnO.
- 6. The transparent conductive film according to claim 1, wherein the transparent oxide layer farthest from the substrate is a layer comprising a mixed oxide of In2O3 and ZnO, which has a compositional gradient so that the In content increases in the layer thickness direction in the direction away from the substrate.
- 7. The transparent conductive film according to claim 1, wherein the transparent oxide layer nearest to the substrate is a layer comprising a mixed oxide of In2O3 and ZnO, which has a compositional gradient so that the In content increases in the layer thickness direction in the direction towards the substrate.
- 8. The transparent conductive film according to claim 1, wherein at least one of the transparent oxide layers is a layer comprising a mixed oxide of In2O3 and ZnO, or a layer made of a multi-layer film comprising film(s) containing In2O3 as the main component and film(s) containing ZnO as the main component, and it is an oxide layer which contains Zn in an amount of at least 50 atomic % based on the sum of Zn and In at a portion where said transparent oxide layer is in contact with a metal layer containing Ag.
- 9. The transparent conductive film according to claim 1, wherein at least one of the transparent oxide layers is a layer made of a multi-layer film comprising film(s) containing In2O3 as the main component and film(s) containing ZnO as the main component, wherein the film(s) containing ZnO as the main component contain(s) Ga.
- 10. The transparent conductive film according to claim 1, wherein at least one of the metal layers is a layer made of an alloy film comprising Ag and other metal(s).
- 11. The transparent conductive film according to claim 1, wherein at least one of the metal layers is a layer made of a multi-layer film comprising metal layer(s) containing Ag and metal layer(s) containing other metal(s).
- 12. The transparent conductive film according to claim 1, wherein at least one of the metal layers is a layer which comprises Ag and other metal(s) and which has a compositional gradient so that the Ag concentration changes in the thickness direction of the layer.
- 13. The transparent conductive film according to claim 10, wherein said other metal(s) is Au or Pd or both.
- 14. The transparent conductive film according to claim 11, wherein said other metal(s) is Au, or Pd or both.
- 15. The transparent conductive film according to claim 12, wherein said other metal(s) is Au, or Pd or both.
- 16. A process for forming a transparent electrode, which comprises forming a transparent conductive film as defined in claim 1 on a substrate, followed by patterning by etching by means of an acidic aqueous solution having a hydrogen ion concentration of from 0.01 to 9M.
- 17. The process for forming a transparent electrode according to claim 16, wherein as the acidic aqueous solution, an acidic aqueous solution containing an oxidizing agent having an oxidizing action against Ag, is employed.
- 18. A substrate provided with an electrode arrangement for a liquid crystal display, wherein a source electrode, a drain electrode and a pixel electrode for a thin film transistor type liquid crystal display are formed by a transparent conductive film as defined in claim 1.
- 19. A process for forming a substrate provided with an electrode arrangement for a liquid crystal display, which comprises forming a gate electrode, a gate-insulating film and a semiconductor layer on a substrate, followed by forming a transparent conductive film as defined in claim 1, and then subjecting the transparent conductive film to etching processing to form a drain electrode having a pixel electrode integrated, and a source electrode.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-198041 |
Jul 1996 |
JP |
|
Parent Case Info
[0001] This application is a continuation-in-part (CIP) application of PCT/JP97/02545, filed Jul. 23, 1997.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09237368 |
Jan 1999 |
US |
Child |
09783547 |
Feb 2001 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
PCT/JP97/02545 |
Jul 1997 |
US |
Child |
09237368 |
Jan 1999 |
US |