Claims
- 1. A transparent electrode in a liquid crystal display device formed on an organic insulating film, wherein said transparent electrode is made of indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched in a short period of time with a low concentration of etchant, and the etchant is a mixture of C2H2O4 and de-ionized water having a ratio between 1:128 and 1:350.
- 2. The transparent electrode according to claim 1, wherein the etchant is the mixture of C2H2O4 and de-ionized water in a ratio of 1:180.
- 3. The transparent electrode according to claim 1, wherein the liquid crystal display device includes a thin film transistor under the organic insulating film.
- 4. The transparent electrode according to claim 3, wherein the transparent electrode is a pixel electrode, and the pixel electrode is connected to a drain electrode of the thin film transistor through a contact hole.
- 5. The transparent electrode according to claim 4, wherein the liquid crystal display device further includes a substrate, a gate electrode of the thin film transistor formed over the substrate, a gate insulating film formed over the gate electrode and the substrate, a semiconductor layer formed over the gate insulating film, an ohmic contact layer over the semiconductor layer, and a source electrode and the drain electrode over the ohmic contact layer, the source electrode, the drain electrode and the ohmic contact layer being patterned to be spaced by a channel over the gate electrode.
- 6. The transparent electrode according to claim 1, wherein the organic insulating film has been cured under a nitrogen atmosphere.
- 7. The transparent electrode according to claim 1, wherein the IZO has been deposited by sputtering.
- 8. An etchant for etching a transparent electrode made of indium-zinc-oxide (IZO) which is formed on an organic insulating film, wherein the etchant is a mixture containing oxalic acid.
- 9. The etchant according to claim 8, wherein the etchant is a mixture of C2H2O4 and de-ionized water in a ratio of between 1:128 and 1:350.
- 10. The etchant according to claim 9, wherein the ratio is 1:180.
- 11. The etchant according to claim 8, wherein the indium-zinc-oxide (IZO) is etched at a temperature of about 25° C.
- 12. The etchant according to claim 8, wherein the indium-zinc-oxide (IZO) is etched within about 300 seconds with the etchant.
- 13. The etchant according to claim 8, wherein an etching rate of said indium-zinc-oxide (IZO) is 550 Å per minute.
- 14. A method of etching a transparent electrode of indium-zinc-oxide formed on an organic insulating film which comprises etching said transparent electrode with a mixture of oxalic acid (C2H2O4) and de-ionized water as an etchant in a ratio of between 1:128 and 1:350.
- 15. The method of claim 14, wherein the etching is conducted at a temperature of about 25° C.
- 16. The method of claim 14, wherein the ratio is 1:180.
- 17. The method of claim 14, further comprising etching the indium-zinc-oxide (IZO) within about 300 seconds.
- 18. The method of claim 14, wherein an etching rate of said indium-zinc-oxide (IZO) is 550 Å per minute.
- 19. A method of forming a transparent electrode on an organic insulating film in a liquid crystal display device, said transparent electrode being made of indium-zinc-oxide (IZO) having an amorphous structure, comprising:
providing a low concentration of etchant being a mixture of C2H2O4 and de-ionized water having a ratio between 1:128 and 1:350; and etching the transparent electrode in a short period of time with the etchant.
- 20. The method of forming a transparent electrode according to claim 19, wherein the ratio is 1:180.
- 21. The method of forming a transparent electrode according to claim 19, further comprising providing the liquid crystal display device with a thin film transistor under the organic insulating film.
- 22. The method of forming a transparent electrode according to claim 21, further comprising forming the transparent electrode as a pixel electrode, and connecting the pixel electrode to a drain electrode of the thin film transistor through a contact hole.
- 23. The method of forming a transparent electrode according to claim 22, further comprising providing the liquid crystal display device with a substrate, forming a gate electrode of the thin film transistor over the substrate, forming a gate insulating film over the gate electrode and the substrate, forming a semiconductor layer over the gate insulating film, forming an ohmic contact layer over the semiconductor layer, forming a source electrode and the drain electrode over the ohmic contact layer, and patterning the source electrode, the drain electrode and the ohmic contact layer to be spaced by a channel over the gate electrode.
- 24. The method of forming a transparent electrode according to claim 19, further comprising curing the organic insulating film under a nitrogen atmosphere.
- 25. The method of forming a transparent electrode according to claim 19, further comprising depositing the IZO by sputtering.
Priority Claims (1)
Number |
Date |
Country |
Kind |
P99-63228 |
Dec 1999 |
KR |
|
Parent Case Info
[0001] This application is a continuation of co-pending Application No. 09/749,038, filed on Dec. 28, 2000, the entire contents of which are hereby incorporated by reference and for which priority is claimed under 35 U.S.C. § 120; and this application claims priority of Application No. P99-63228 filed in Korea on December 28, 1999 under 35 U.S.C. § 119.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09749038 |
Dec 2000 |
US |
Child |
10642174 |
Aug 2003 |
US |