Japanese patent 59-181678 abstract, Oct. 1984.* |
McMahon R. “Voltage controlled, reactive planar magnetron sputtering of AIN thin films”, J. Vac. Sci. Technol., 20(3), pp. 376-378, Mar.1982.* |
U.S. Ser. No. 09/440679, Sundarrajon et al. |
Ishihara et al., Control of Preferential Orientation of AIN Films Prepared by the Reactive Sputtering Method, Thin Solid Films, vol. 316, pp. 152-157 (1998). |
Yong et al., Characteristics of Hydrogenated aluminum Nitride Films Prepared by Radio Frequency Reactive Sputtering and their Application to Surface Acoustic Wave Devices, Journal of Vacuum Science and Technology, vol. 15, No. 2, pp. 390-393 (Mar./Apr. 1997). |
Giannelli et al., Surface Acoustic Wave Channel Waveguides by AIN Films, IEEE Ultrasonics Symposium, vol. 1, pp. 289-292 (1996). |
Ivanov et al., Growth of Epitaxial AIN (0001) on Si(111) by Reactive Magnetron Sputter Deposition, Journal of Applied Physics, vol. 78, No. 9, pp. 5721-5726 (Nov.1995). |
Liaw et al., The Characterization of Sputtered Polycrystalline Aluminum Nitride on Silicon by Surface Acoustic Wave Measurements, IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 42, No. 3, pp. 404-409 (May 1995). |
Odintzov et al., AIN Films for SAW Sensors, Sensors and Actuators A, vol. 28, No. 3, pp. 203-206 (1991). |
Shiosaki, Piezoelectric Thin Films, Journal of The Ceramic Society of Japan, vol. 99, No. 1154, pp. 836-841 (Oct. 1991). |
O'Connell et al., New Materials for Surface Acoustic Wave (SAW) Devices, Optical Engineering, vol. 16, No. 5, pp. 440-445 (Sep.-Oct. 1977). |
National Technical Information Service, Aluminum Nitride for Surface Acoustic Waves, Technical Report AFML-TR-74-186 (Aug. 1974). |