Ultra fine fiber polishing pad

Information

  • Patent Grant
  • 7762873
  • Patent Number
    7,762,873
  • Date Filed
    Tuesday, May 13, 2008
    16 years ago
  • Date Issued
    Tuesday, July 27, 2010
    14 years ago
Abstract
A polishing pad includes a body having a polymer layer and a polishing layer. The polymer layer has opposite first and second faces. The polymer layer includes a plurality of first ultrafine fibers and a polymer bonding the first ultrafine fibers together. The polishing layer is formed on the first face of the polymer layer. The polishing layer includes a plurality of second ultrafine fibers and is free of the polymer. The first and second ultrafine fibers are identical to each other. The second ultrafine fibers have a first concentration of ultrafine fibers by volume higher than 80% a total volume of the polishing layer. The first ultrafine fibers of the polymer layer have a second concentration of ultrafine fibers by volume to a total volume of the polymer layer. The first concentration is higher than the second concentration.
Description
BACKGROUND OF INVENTION

1. Field of the Invention


The present invention relates to a polishing pad for polishing the surfaces of objects such as semiconductors, storage medium substrates, integrated circuits and electro-optical panels, and relates to a method for making the polishing pad.


2. Related Prior Art


In the semiconductor industry, there is a trend toward the reduction of the semiconductor characteristics and the increasing of the superficial planarity. In detail, it is preferred to provide a surface with an even form by reducing the quantity and size of superficial flaws.


Polishing is often used to turn a rough surface into a smooth surface. Amid other polishing methods, there are fixed-type polishing methods and suspension-type polishing methods.


In a fixed-type polishing method, used is a fixed-type polishing pad with a polishing layer on a substrate. The substrate is a PET foil for example. The polishing layer includes polishing particles and an adhesive for fixing the polishing particles to the substrate. Although providing a high polishing rate, the fixed-type polishing pad causes grave impacts on the polished surface, and it is difficult to clean the polished surface of debris. Hence, many large and deep scratches are made in the polished surface, and this is not desirable.


In a suspension-type polishing method, used is a suspension-type polishing pad with a polishing solution on a substrate. The polishing solution is a suspension with polishing particles suspended in a solvent. For the use of the solvent, it is easy to clean the polished surface of debris. As suspended in the solvent, the polishing particles freely move. Hence, the impacts on the polished surface by the suspended polishing particles can readily be adjusted. Moreover, it is easy to control the result by changing the suspension-type polishing pad. Various velvets and fabrics are used in the suspension-type polishing pad to achieve adequate effects according to different purposes.


In the suspension-type polishing method, the polishing solution is provided between the substrate and the polished surface, and the substrate is regularly rotated related to the polished surface. The substrate of the suspension-type polishing pad may include urethane or polyurethane plastics filled in a blanket made of polyester. Alternatively, the blanket may be made of natural fibers such as wool.


Chemical mechanical polishing (“CMP”) is often used in a typical machine for polishing semiconductor devices. In a CMP method, a polishing pad includes a polishing solution on a substrate. The polishing pad is used to polish the surfaces of semiconductor devices. The polishing solution is provided between a wafer and the substrate, and the wafer is pressed on and rotated relative to the polishing pad while chemical substances in the polishing solution and the pressure and rate between the wafer and the polishing pad and temperature are under control. The polishing solution includes polishing particles capable of mechanically polishing the surface of the wafer when mixed with the chemical substances. Between the chemical substances and the surface of the wafer, chemical reactions such as removal and oxidation happen. The polishing pad often includes a continuous substrate. When the wafer is rotated relative to the polishing pad, some redundant material is mechanically removed from the surface of the wafer by the polishing particles of the polishing liquid while some other redundant material is chemically removed from the surface of the wafer by the solvent of the polishing liquid.


Disclosed in US Patent Application Publication 2002/0013984A1 is a sheet for texturing and a method of producing the same. The method includes four steps among which the second and third steps can be interchanged.


Firstly, a non-woven fabric is composed of ultrafine fiber-generating fibers (a) and (b).


Secondly, an elastomer is filled in the non-woven fabric so as to form a sheet.


Thirdly, the ultrafine fiber-generating fibers (a) are converted to bundles of ultrafine fibers while the ultrafine fiber-generating fibers (b) are converted to bundles of ultrafine fibers not more than 0.03 dtex in fineness.


Fourthly, at least one side of the sheet is ground so that the ultrafine fibers under 0.03 dtex in fineness form nap.


A polishing layer is formed on the side of the sheet on which the nap is formed. However, in the step of converting the fibers (a) and (b) to the ultrafine fibers, since the polishing layer includes the polymer and the fibers, the polishing layer cannot adequately be opened so that the nap is not fine enough and that the nap may get entangled. If the polishing layer contains too much polymer, when it is used to polish an object, particles (polishing synthetic materials, sheet materials, polishing particles, particles of sheet materials and debris of the object) will stick to the polymer of the polishing layer and cannot smoothly be removed by a polishing solution. These redundant particles will wear away the object and jeopardize the polishing of the object.


The present invention is therefore intended to obviate or at least alleviate the problems encountered in the prior art.


SUMMARY OF INVENTION

It is the primary objective of the present invention to provide a polishing pad with ultrafine fibers that are highly opened and therefore do not cause damages to an object.


A polishing pad according to the preferred teachings of the present invention includes a body having a polymer layer with opposite first and second faces and a polishing layer on the first face of the polymer layer. The polymer layer includes a plurality of first ultrafine fibers and a polymer bonding the first ultrafine fibers together. The polishing layer includes a plurality of second ultrafine fibers and is free of the polymer. The first and second ultrafine fibers are identical to each other. The second ultrafine fibers have a concentration of ultrafine fibers by volume higher than 80% of a total volume of the polishing layer. The first ultrafine fibers of the polymer layer have a second concentration of ultrafine fibers by volume to a total volume of the polymer layer. The first concentration is higher than the second concentration.


Preferably, the second ultrafine fibers in the polishing layer have a fineness lower than 0.05 dtex.


The polishing pad can be used to polish any substrate made of glass, metal, metal oxide, metal alloy or semi-conductor or any combination thereof.


The substrate may include any proper metal such as copper, aluminum, tantalum, titanium, tungsten, gold, platinum, iridium, ruthenium and any combination thereof such as alloy and mixture.


The substrate may include any proper metal oxide such as aluminum oxide, silicon oxide, titanium oxide, cerium oxide, zirconium oxide, germanium oxide, magnesium oxide and any combination thereof.


The substrate may include any proper metal alloy such as metal nitride (such as tantalum nitride, titanium nitride and tungsten nitride), metal carbide (such as silicone carbide and tungsten carbide), nickel-phosphorous, aluminum-silicone-boron, silicone-boron glass, silicone-phosphorous glass, silicone-phosphorous-boron glass, silicone-germanium alloy, silicone-germanium-carbon alloy.


The substrate may include any proper semi-conductor such as mono-crystalline silicone, multi-crystalline silicone, amorphous silicone, silicon-on-insulator and gallium arsenide.


Other objectives, advantages and features of the present invention will become apparent from the following description referring to the drawings.





BRIEF DESCRIPTION OF DRAWINGS

A polishing pad according to the preferred embodiment of the present invention will be described referring to the drawings.



FIG. 1 is a SEM view of a conventional polishing pad.



FIG. 2 is a SEM view of the polishing pad according to the preferred embodiment of the present invention.



FIG. 3 shows a flowchart of a method of a first embodiment according to the preferred teachings of the present invention.



FIG. 3A shows a non-woven fabric formed after a first step of the method of FIG. 3.



FIG. 3B shows the non-woven fabric of FIG. 3A after a second step of the method of FIG. 3.



FIG. 3C shows the non-woven fabric of FIG. 3B after a third step of the method of FIG. 3.



FIG. 3D shows the non-woven fabric of FIG. 3C after a fourth step of the method of FIG. 3.



FIG. 3E shows a polishing pad after grinding the non-woven fabric of FIG. 3D.



FIG. 4 shows a flowchart of a method of a second embodiment according to the preferred teachings of the present invention.



FIG. 4A shows a non-woven fabric formed after a first step of the method of FIG. 4.



FIG. 4B shows the non-woven fabric of FIG. 4A after a second step of the method of FIG. 3.



FIG. 4C shows the non-woven fabric of FIG. 4B after a third step of the method of FIG. 4.



FIG. 4D shows the non-woven fabric of FIG. 4C after a fourth step of the method of FIG. 4.



FIG. 4E shows the non-woven fabric of FIG. 4D after a fifth step of the method of FIG. 4.



FIG. 4F shows a polishing pad after grinding the non-woven fabric of FIG. 4E.





DETAILED DESCRIPTION OF EMBODIMENTS

In a method to manufacture a polishing pad according to the preferred teachings of the present invention, ultrafine fiber-generating fibers are made into a non-woven fabric with two sides. At least one of the sides of the non-woven fabric is made a dense layer. The non-woven fabric is coated with a polymer such as a polyurethane resin, a polyvinylchloride resin, a polystyrene resin, a polyvinyl resin, a polyamide resin, a propylene resin and a vinyl-vinylacetate resin. Because of the dense layer, the polymer cannot penetrate the non-woven fabric.


The dense layer can be made by heating the side of the non-woven fabric at a temperature higher than 100 degrees Celsius so that the surfaces of the ultrafine fiber-generating fibers are transformed and made dense. While being heated, the side of the non-woven fabric can be pressed.


Alternatively, the dense layer can be made by coating the non-woven fabric with a dissolvable substance such as polyvinyl alcohol, methyl cellulose, sodium bicarbonate and amylase. The concentration of the dissolvable substance is 5% to 15% and provided with a roller at 100 to 200 g/m2. Thus, when the polymer is coated on the non-woven fabric, the polymer cannot penetrate the non-woven fabric since the dissolvable substance has occupied the superficial space. The dissolvable substance can be washed away with water.


The ultrafine fiber-generating fibers are converted to ultrafine fibers. Since the dense layer prevents the polymer from penetrating the ultrafine fiber-generating fibers, the ultrafine fibers includes a high concentration of fiber. The ultrafine fibers are transformed into nap. A polishing pad is completed. In use, the nap of a polishing layer of the polishing pad will not get entangled and cause damages to an object polished by the polishing pad.


According to a method of an example for making the polishing pad according to the preferred teachings of the present invention shown in FIG. 3, at A1, ultrafine fiber-generating fibers 11 are made into a non-woven fabric 1 (FIG. 3A). At A2, a side of the non-woven fabric 1 is heated at 120 degrees Celsius to form an outer, dense layer 12 (FIG. 3B). At A3, the non-woven fabric 1 is impregnated with a polymer 13 such as polyurethane resin to form a thin sheet (FIG. 3C). At A4, the ultrafine fiber-generating fibers 11 in the non-woven fabric 1 (the thin sheet) are converted into ultrafine fiber bundles 111 (FIG. 3D). At A5, the dense layer 12 of the non-woven fabric 1 is ground so that a polishing pad is formed with a polishing layer that includes nap 112 less than 0.05 dtex (FIG. 3E). The dense layer 12 remains a high concentration of fiber. According to a method of a second example for making the polishing pad according to the preferred teachings of the present invention shown in FIG. 4, at B1 ultrafine fiber-generating fibers 11 are made into a non-woven fabric 1 (FIG. 4A). At B2, a gravure roll is used to coat a side of the non-woven fabric 1 with a water solution containing 5% to 15% by weight of a water soluble substance 14 such as methyl cellulose at 100 to 200 g/m2. The side of the non-woven fabric 1 is, thus, made dense to form a dense layer 12′ (FIG. 4B) in order to prevent polymers from penetrating the non-woven fabric 1. At B3, the non-woven fabric 1 is impregnated with a polymer 13 such as polyurethane resin to form a thin sheet (FIG. 4C). At B4, the non-woven fabric 1 is washed in order to remove the water soluble substance 14 (FIG. 4D). At B5, the ultrafine fiber-generating fibers 11 in the non-woven fabric 1 (the thin sheet) are converted into ultrafine fiber bundles 111 (FIG. 4E). At B6, the dense layer 12′ of the non-woven fabric 1 is ground so that a polishing pad is formed with a polishing layer that includes nap 112 less than 0.05 dtex (FIG. 4F). The dense layer 12′ still includes a high concentration of fiber.


Conclusively, the polishing pad according to the preferred teachings of the present invention includes a body having a polymer layer having opposite first and second faces and a polishing layer on the first face of the polymer layer. The polymer layer includes a plurality of first ultrafine fibers and a polymer bonding the first ultrafine fibers together. The polishing layer includes a plurality of second ultrafine fibers. The first and second ultrafine fibers are identical to each other. The second ultrafine fibers have a first concentration of ultrafine fibers by volume to a total volume of the polishing layer. The first ultrafine fibers of the polymer layer have a second concentration of ultrafine fibers by volume to a total volume of the polymer layer. The first concentration is higher than the second concentration.


Referring to FIG. 2, there is shown a polishing pad according to the preferred teachings of the present invention. The nap on the polishing layer is even and dense. The concentration of fiber of the dense layer is higher than 80%. On the contrary, referring to FIG. 1, the concentration of polyurethane of a polishing pad made in a conventional method is 45% to 50%. The concentration of polyurethane of the polishing pad of the present invention is 30% which is less than that of the conventional polishing pad. The polishing pad according to the preferred teachings of the present invention is more flexible and hangs better than the conventional polishing pad. The polishing pad according to the preferred teachings of the present invention makes fewer scratches than the conventional polishing pad. The scratches made by the polishing pad according to the preferred teachings of the present invention are lower than 1000/μm2. The scratches made by the conventional polishing pad are 2000/μm2 to 25000/μm2.


It is noted that the ultrafine fiber-generating fibers may be conjugate fibers or composite fibers.


The present invention has been described by the detailed description of the embodiments. Those skilled in the art can derive variations from the embodiments without departing from the scope of the present invention. Therefore, the embodiments shall not limit the scope of the present invention defined in the claims.

Claims
  • 1. A polishing pad comprising a body including a polymer layer and a polishing layer, with the polymer layer having opposite first and second faces, with the polymer layer including a plurality of first ultrafine fibers and a polymer bonding the plurality of first ultrafine fibers together, with the polishing layer being formed on the first face of the polymer layer and free of the polymer, with the polishing layer including a plurality of second ultrafine fibers, with the plurality of first and second ultrafine fibers being identical to each other, with the plurality of second ultrafine fibers having a first concentration of ultrafine fibers by volume higher than 80% of a total volume of the polishing layer, with the plurality of first ultrafine fibers of the polymer layer having a second concentration of ultrafine fibers by volume to a total volume of the polymer layer, wherein the first concentration is higher than the second concentration.
  • 2. The polishing pad according to claim 1, with the plurality of second ultrafine fibers in the polishing layer having a fineness lower than 0.05 dtex.
Priority Claims (1)
Number Date Country Kind
94117355 A May 2005 TW national
CROSS REFERENCE TO RELATED APPLICATION

This is a divisional application of U.S. patent application Ser. No. 11/369,139 filed Mar. 6, 2006, now abandoned.

US Referenced Citations (93)
Number Name Date Kind
2116289 Shepherd May 1938 A
3383273 Roland et al. May 1968 A
3531368 Okamoto et al. Sep 1970 A
3590112 Civardi Jun 1971 A
3716614 Okamoto et al. Feb 1973 A
3835212 Piacente Sep 1974 A
3841897 Okazaki et al. Oct 1974 A
3865678 Okamoto et al. Feb 1975 A
3900549 Yamane et al. Aug 1975 A
3989869 Neumaier et al. Nov 1976 A
4018954 Fukushima et al. Apr 1977 A
4045598 Henson Aug 1977 A
4067833 Austin et al. Jan 1978 A
4096104 Spain et al. Jun 1978 A
4145468 Mizoguchi et al. Mar 1979 A
4216251 Nishimura et al. Aug 1980 A
4250308 Goedecke et al. Feb 1981 A
4259384 Veiga et al. Mar 1981 A
4342805 McCartney Aug 1982 A
4363845 Hartmann Dec 1982 A
4433095 Hombach et al. Feb 1984 A
4476186 Kato et al. Oct 1984 A
4587142 Higuchi et al. May 1986 A
4708839 Bellet et al. Nov 1987 A
4728552 Jensen, Jr. Mar 1988 A
4841680 Hoffstein et al. Jun 1989 A
4927432 Budinger et al. May 1990 A
4954141 Takiyama et al. Sep 1990 A
4966808 Kawano Oct 1990 A
4997876 Scarso Mar 1991 A
5020283 Tuttle Jun 1991 A
5094670 Imada Mar 1992 A
5124194 Kawano Jun 1992 A
5197999 Thomas Mar 1993 A
5212910 Breivogel et al. May 1993 A
5216843 Breivogel et al. Jun 1993 A
5225267 Ochi et al. Jul 1993 A
5242750 Wagner et al. Sep 1993 A
5290626 Nishioi et al. Mar 1994 A
5297364 Tuttle Mar 1994 A
5394655 Allen et al. Mar 1995 A
5482756 Berger et al. Jan 1996 A
5484646 Mann Jan 1996 A
5489233 Cook et al. Feb 1996 A
5503899 Ashida et al. Apr 1996 A
5510175 Shiozawa Apr 1996 A
5518800 Okawa et al. May 1996 A
5533923 Shamouilian et al. Jul 1996 A
5554064 Breivogel et al. Sep 1996 A
5562530 Runnels et al. Oct 1996 A
5611943 Cadien et al. Mar 1997 A
5662966 Kobayashi Sep 1997 A
5733635 Terakawa et al. Mar 1998 A
5993943 Bodaghi et al. Nov 1999 A
6089965 Otawa et al. Jul 2000 A
6159581 Yoneda et al. Dec 2000 A
6322851 Adachi et al. Nov 2001 B1
6383066 Chen et al. May 2002 B1
6451404 Nobuto et al. Sep 2002 B1
6451716 Sasaki et al. Sep 2002 B1
6468651 Aikawa et al. Oct 2002 B2
6479153 Kato et al. Nov 2002 B1
6515223 Tashjian Feb 2003 B2
6517938 Andoh et al. Feb 2003 B1
6528139 Hoyt et al. Mar 2003 B2
6533645 Tolles Mar 2003 B2
6613867 Sonnenschein et al. Sep 2003 B2
6767853 Nakayama et al. Jul 2004 B1
6852392 Kikuchi et al. Feb 2005 B2
6852418 Zurbig et al. Feb 2005 B1
6860802 Vishwanathan et al. Mar 2005 B1
6964604 Chen et al. Nov 2005 B2
7025915 Wang et al. Apr 2006 B2
20020013984 Makiyama et al. Feb 2002 A1
20020098756 Sasaki et al. Jul 2002 A1
20040045145 Wang et al. Mar 2004 A1
20040063370 Makiyama et al. Apr 2004 A1
20040142148 Feng et al. Jul 2004 A1
20040162013 Chen et al. Aug 2004 A1
20040191412 Wang et al. Sep 2004 A1
20040253404 Wang et al. Dec 2004 A1
20050100710 Feng et al. May 2005 A1
20050244654 Wang et al. Nov 2005 A1
20050260416 Wang et al. Nov 2005 A1
20060046597 Wang et al. Mar 2006 A1
20060057432 Feng et al. Mar 2006 A1
20060147642 Wang et al. Jul 2006 A1
20060160449 Wang et al. Jul 2006 A1
20060218729 Feng Oct 2006 A1
20060249244 Wang et al. Nov 2006 A1
20060263601 Wang et al. Nov 2006 A1
20060272770 Lee et al. Dec 2006 A1
20070155268 Feng et al. Jul 2007 A1
Foreign Referenced Citations (15)
Number Date Country
1346912 May 2002 CN
3536371 May 1987 DE
10100814 Jul 2001 DE
1054096 Nov 2000 EP
52047896 Apr 1977 JP
05117584 May 1993 JP
06192969 Jul 1994 JP
08291454 Nov 1996 JP
09059881 Mar 1997 JP
11093082 Apr 1999 JP
2000248431 Sep 2000 JP
2002004295 Jan 2002 KR
WO9615887 May 1996 WO
WO0002707 Jan 2000 WO
WO2004044028 May 2004 WO
Related Publications (1)
Number Date Country
20080227375 A1 Sep 2008 US
Divisions (1)
Number Date Country
Parent 11369139 Mar 2006 US
Child 12119580 US