The ‘Internet of Things’ (IoT) envisages the use of many standalone sensors to detect the environment, track objects etc. that will communicate wirelessly with a host computing device (e.g. a smartphone) which is connected to the internet. A suitable short range wireless technology for making this connection is Bluetooth® Smart (or Bluetooth Low Energy, BLE). As the stand alone sensors are battery powered, there is a need to reduce the power consumption of Bluetooth® Smart chips in order to extend the battery life of the devices in which they are incorporated. Active power consumption may be improved by moving to smaller dimension technology nodes when fabricating the chips, for example 40 nm, 28 nm, etc. The term ‘technology node’ refers to the process used to fabricate chips, with the dimension typically specifying the minimum gate length (although it may refer to other features).
The embodiments described below are not limited to implementations which solve any or all of the disadvantages of known transistors.
This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
Methods of fabricating ultra-low power transistors are described using advanced technology nodes (e.g. 40 nm or less). In an embodiment, by optimizing a MOSFET to a different point, i.e. for low junction off (or leakage) current rather than speed/on current, a MOSFET can be produced which still meets the HCl reliability specification but has significantly reduced power consumption when off, e.g. half to one third of the standard off current. At this new optimisation point, the LDD dose is reduced to a level (e.g. 10-20% of the standard LDD dose) such that if it is reduced further, the device will no longer pass the HCl reliability specification. This is in contrast to standard MOSFETs which are optimized for speed/on current and have an LDD dose which, if increased further, would cause the device to no longer pass the HCl reliability specification.
A first aspect provides a method of fabricating a MOSFET using a CMOS technology node of 40 nm or less, the technology node comprising a first optimization point for LDD implant dose and a second optimization point for LDD implant dose, the first optimization point comprising a maximum LDD implant dose that satisfies an HCl reliability requirement and the second optimization point comprising a minimum LDD implant dose that satisfies the same HCl reliability requirement and the method comprising: forming pocket implants in a MOSFET structure; and forming LDD implants in the MOSFET structure using an LDD implant dose at the second optimization point.
The preferred features may be combined as appropriate, as would be apparent to a skilled person, and may be combined with any of the aspects of the invention.
Embodiments of the invention will be described, by way of example, with reference to the following drawings, in which:
Common reference numerals are used throughout the figures to indicate similar features.
Embodiments of the present invention are described below by way of example only. These examples represent the best ways of putting the invention into practice that are currently known to the Applicant although they are not the only ways in which this could be achieved. The description sets forth the functions of the example and the sequence of steps for constructing and operating the example. However, the same or equivalent functions and sequences may be accomplished by different examples.
As described above, there is a need to reduce the power consumption of short range wireless chips, such as Bluetooth® Smart (or BLE), in order to extend the battery life of devices in which they are incorporated. Use of smaller dimension technology nodes (e.g. 40 nm, 28 nm, etc, which collectively may be referred to as ‘advanced technology nodes’) for the CMOS processes used to fabricate the chips reduces the active power consumption (i.e. the power consumption when the device is active); however, chips used in these applications are unusual because they spend a large percentage of their time (e.g. 98%) in standby modes. In an example, a device may wake for only 1 ms in every second to poll a central device and/or receive a packet from that device in order to maintain the presence of the device within network.
As these devices typically spend the majority of their time in standby mode, the active power consumption is no longer the dominant consumer of power and instead the power consumption when in the standby state becomes the dominant factor. The smaller dimension technology nodes (e.g. the advanced technology nodes) typically have higher leakage currents in the off state and hence higher power consumption in standby modes of operation, as shown in
As can be seen from the graph in
Methods of fabricating a transistor are described below which can be used to produce an ultra-low power (ULP) transistor in advanced technology nodes (i.e. 40 nm and below) with a reduced off current (e.g. as indicated by the circle 110 in the graph of
It will be appreciated that the process of fabricating a transistor comprises many hundreds of steps and the method described herein relates to changing only a small number of those steps and only these steps are described below. As is described in more detail below, the methods relate to changing the LDD (lightly doped drain, also written Ldd) implant dose and energy. In various examples, the methods may further relate to changing one or more of: the pocket implant dose, energy and the angle used for the pocket implant. Furthermore, a dual (rather than quad) implant scheme may be used for both the LDD and pocket implants.
Typically a MOSFET is optimized to maximize the value of Ion whilst still meeting the HCl reliability specification and as a result, MOSFETs are fabricated with an LDD dose indicated by the point A in
It has, however, been appreciated by the inventors that a MOSFET may alternatively be fabricated with an LDD dose at an alternative optimization point indicated by the point B in
This leap to optimize a transistor at point B rather than point A which has been made by the inventors is counter-intuitive and goes against the general teaching within the industry which has always worked towards increased values of Ion and increased speed (as indicated by the graph in
Although a transistor which is fabricated at (or close to) optimization point B in
In an example, the LDD implant dose at optimization point B may be 10-20% of the LDD implant dose at optimization point A and therefore a transistor may be fabricated with a LDD implant dose which is 10-20% of the conventional implant dose (which may, for example, be 1E15 ion/cm2).
In addition to reducing the LDD implant dose, as described above, the MOSFET fabrication process may be further modified to further reduce the junction leakage current. In particular, in various examples, the energy used when implanting the LDD may be increased to up to four times the conventional value (e.g. between two and four times the conventional value). For example, for a PMOSFET, an energy of around 5 keV may typically be used when implanting BF2 and for an NMOSFET, an energy of around 2 keV may typically be used when implanting As, and therefore these values may be increased to up to around 20 keV and 8 keV respectively.
Furthermore, in various examples, the pocket implant dose may be reduced in a similar manner to the LDD implant dose, for example to around 90% of the conventional pocket implant dose. Similarly, the energy used when implanting the pocket may be increased by up to 30% from conventional values. Examples of conventional values are, for a PMOSFET pocket, a dose of around 0.5E14 and an energy of around 55 keV may be used when implanting As and for an NMOSFET pocket, a dose of around 1E14 and an energy of around 9 keV may be used when implanting B.
In various examples, the angle used for the pocket implant may be increased (e.g. in addition to the other measures described above). The angle a used for the pocket implant 208 is indicated by arrow 212 in
In various examples, one further modification to the fabrication process may be made through the use of dual implants rather than quad implants (as are commonly used). This change from quad to dual implants (for both the LDD implants and pocket implants) improves control and reduces variability but does not in itself affect the junction leakage current. Using dual implants rather than quad implants poses certain restrictions on the layout of transistors on a chip (and at a larger scale the entire wafer) as all the transistor gates must be aligned parallel to the same axis (i.e. parallel to each other and without any which are perpendicular to other gates).
In various examples, the operating voltage of the MOSFET may be reduced from the conventional operating voltage of 1.1V to 0.85V to further reduce gate leakage.
Any range or device value given herein may be extended or altered without losing the effect sought, as will be apparent to the skilled person.
It will be understood that the benefits and advantages described above may relate to one embodiment or may relate to several embodiments. The embodiments are not limited to those that solve any or all of the stated problems or those that have any or all of the stated benefits and advantages.
Any reference to an item refers to one or more of those items. The term ‘comprising’ is used herein to mean including the method blocks or elements identified, but that such blocks or elements do not comprise an exclusive list and a method or apparatus may contain additional blocks or elements.
The steps of the methods described herein may be carried out in any suitable order, or simultaneously where appropriate. Additionally, individual blocks may be deleted from any of the methods without departing from the spirit and scope of the subject matter described herein. Aspects of any of the examples described above may be combined with aspects of any of the other examples described to form further examples without losing the effect sought.
It will be understood that the above description of a preferred embodiment is given by way of example only and that various modifications may be made by those skilled in the art. Although various embodiments have been described above with a certain degree of particularity, or with reference to one or more individual embodiments, those skilled in the art could make numerous alterations to the disclosed embodiments without departing from the spirit or scope of this invention.
Number | Date | Country | Kind |
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1405181.7 | Mar 2014 | GB | national |