with a pocket or a lightly doped drain selectively formed at the side of the gate

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CPC
H01L29/66492

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66492with a pocket or a lightly doped drain selectively formed at the side of the gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming ultra-shallow junction
- Patent number 12,165,876
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and methods of forming same
- Patent number 12,132,107
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device including LDD region and manufactur...
- Patent number 12,125,909
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Jongsung Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,125,908
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ling Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,094,877
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jen-Chih Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory and forming method thereof
- Patent number 12,082,405
- Issue date Sep 3, 2024
- United Microelectronics Corp.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure and related inverter
- Patent number 12,074,205
- Issue date Aug 27, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,046,674
- Issue date Jul 23, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 12,021,143
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method of fabricating the same
- Patent number 12,015,068
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Bo-Wen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DEPFET transistor and method of manufacturing a DEPFET transistor
- Patent number 12,015,082
- Issue date Jun 18, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-rotation gate-edge diode leakage reduction for MOS transistors
- Patent number 12,009,423
- Issue date Jun 11, 2024
- Texas Instruments Incorporated
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-last ferroelectric field effect transistor and manufacturing m...
- Patent number 11,996,454
- Issue date May 28, 2024
- Xiangtan University
- Min Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturized transistor structure with controlled dimensions of sou...
- Patent number 11,972,983
- Issue date Apr 30, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturized transistor structure with controlled dimensions of sou...
- Patent number 11,973,120
- Issue date Apr 30, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor element, ternary inverter apparatus comprising same, and...
- Patent number 11,908,863
- Issue date Feb 20, 2024
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices with asymmetrical floating gates
- Patent number 11,901,425
- Issue date Feb 13, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shyue Seng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device with three-dimensional half flash structure and...
- Patent number 11,888,074
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with implant screen
- Patent number 11,881,528
- Issue date Jan 23, 2024
- Micron Technology, Inc.
- Michael A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,876,096
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel stop and well dopant migration control implant for reduced...
- Patent number 11,869,956
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with doped region
- Patent number 11,855,176
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,855,183
- Issue date Dec 26, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Wei Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming programmable memory
- Patent number 11,832,444
- Issue date Nov 28, 2023
- United Microelectronics Corp.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type strained channel in a fin field effect transistor (FinFET) d...
- Patent number 11,817,499
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,817,500
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and related apparatus for integrating electronic memory in a...
- Patent number 11,817,488
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...
- Publication number 20240405125
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jack G. Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING PROGRAMMABLE MEMORY
- Publication number 20240397712
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Hsueh-Chun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240387681
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE
- Publication number 20240379789
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CIRCUIT
- Publication number 20240371950
- Publication date Nov 7, 2024
- ETRON TECHNOLOGY, INC.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240371870
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jen-Chih Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240355936
- Publication date Oct 24, 2024
- United Microelectronics Corp.
- Boon Keat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPFET TRANSISTOR
- Publication number 20240322038
- Publication date Sep 26, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Alexander Bähr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS
- Publication number 20240304723
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240234413
- Publication date Jul 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Natsumi IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ELEMENT, TERNARY INVERTER APPARATUS COMPRISING SAME, AND...
- Publication number 20240162230
- Publication date May 16, 2024
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SONOS MEMORY
- Publication number 20240145583
- Publication date May 2, 2024
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tianquan SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash Memory Device with Three-Dimensional Half Structure and Metho...
- Publication number 20240136444
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136352
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Natsumi IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NATIVE NMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240105844
- Publication date Mar 28, 2024
- RICHTEK TECHNOLOGY CORPORATION
- Ying-Shiou Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MV DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20240096992
- Publication date Mar 21, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qiwei WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND RELATED APPARATUS FOR INTEGRATING ELECTRONIC MEMORY IN A...
- Publication number 20240021692
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tung Ying Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230420560
- Publication date Dec 28, 2023
- Vanguard International Semiconductor Corporation
- Yu-Hao HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230411495
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Ching-Chung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230411489
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Wen-Wen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230402457
- Publication date Dec 14, 2023
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230387112
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jen-Chih Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING GATE-ALL-AROUND (GAA) STRUCTURE
- Publication number 20230387249
- Publication date Nov 30, 2023
- Peking University
- Ming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230378357
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS
- Publication number 20230378296
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...
- Publication number 20230378359
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230378315
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Myoungsoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHODS THEREOF
- Publication number 20230369450
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anhao CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE
- Publication number 20230352583
- Publication date Nov 2, 2023
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS

with a pocket or a lightly doped drain selectively formed at the side of the gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for forming ultra-shallow junction

Gate structure and methods thereof

Semiconductor device with diffusion suppression and LDD implants an...

Semiconductor structure and methods of forming same

Asymmetric semiconductor device including LDD region and manufactur...

Semiconductor device and method

Threshold adjustment for quantum dot array devices with metal sourc...

Semiconductor device and method

Programmable memory and forming method thereof

Transistor structure and related inverter

DEPFET transistor and method of manufacturing a DEPFET transistor

P-type strained channel in a fin field effect transistor (FinFET) d...

Gate structure and method of fabricating the same

DEPFET transistor and method of manufacturing a DEPFET transistor

Two-rotation gate-edge diode leakage reduction for MOS transistors

Gate-last ferroelectric field effect transistor and manufacturing m...

Miniaturized transistor structure with controlled dimensions of sou...

Miniaturized transistor structure with controlled dimensions of sou...

Transistor element, ternary inverter apparatus comprising same, and...

Non-volatile memory devices with asymmetrical floating gates

Flash memory device with three-dimensional half flash structure and...

Transistor with implant screen

Field effect transistors with reduced gate fringe area and method o...

Channel stop and well dopant migration control implant for reduced...

FinFET structure with doped region

Method for manufacturing semiconductor device

Method for forming programmable memory

P-type strained channel in a fin field effect transistor (FinFET) d...

Method of manufacturing a semiconductor device and a semiconductor...

Method and related apparatus for integrating electronic memory in a...

Patents Applicationslast 30 patents

BURIED CHANNEL SEMICONDUCTOR DEVICE INCLUDING ENERGY BARRIER MODULA...

METHOD FOR FORMING PROGRAMMABLE MEMORY

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE

SEMICONDUCTOR CIRCUIT

Semiconductor Device and Method

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

DEPFET TRANSISTOR

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR ELEMENT, TERNARY INVERTER APPARATUS COMPRISING SAME, AND...

METHOD FOR MANUFACTURING SONOS MEMORY

Flash Memory Device with Three-Dimensional Half Structure and Metho...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NATIVE NMOS DEVICE AND MANUFACTURING METHOD THEREOF

MV DEVICE AND METHOD FOR MANUFACTURING SAME

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

METHOD AND RELATED APPARATUS FOR INTEGRATING ELECTRONIC MEMORY IN A...

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

Semiconductor Device and Method

METHOD FOR FABRICATING GATE-ALL-AROUND (GAA) STRUCTURE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS

P-Type Strained Channel in a Fin Field Effect Transistor (FinFET) D...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

GATE STRUCTURE AND METHODS THEREOF

ENHANCED MOSFET WITH SUPERIOR RF PERFORMANCE