V trench dry etch

Abstract

Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.

Description

FIELD

Embodiments of the invention relate to forming V-shaped trenches in substrates.

BACKGROUND

Integrated circuits are made possible by processes which produce intricately patterned material layers on substrate surfaces. Producing patterned material on a substrate requires controlled methods for removal of exposed material. Chemical etching is used for a variety of purposes including transferring a pattern in photoresist into underlying layers, thinning layers or thinning lateral dimensions of features already present on the surface. Often it is desirable to have an etch process which removes one material faster than another helping e.g. a pattern transfer process proceed. Such an etch process is referred to as a selective etch process. As a result of the diversity of materials, circuits and processes, selective etch processes have been developed with a selectivity towards a variety of materials.

Dry etch processes are often desirable for selectively removing material from semiconductor substrates. The desirability stems from the ability to gently remove material from miniature structures with minimal physical disturbance. Dry etch processes also allow the etch rate to be abruptly stopped by removing the gas phase reagents. Some dry-etch processes involve the exposure of a substrate to remote plasma by-products formed from one or more precursors. For example, remote plasma excitation of ammonia and nitrogen trifluoride enables silicon oxide to be selectively removed from a patterned substrate when the plasma effluents are flowed into the substrate processing region.

Methods are needed to broaden the utility of dry-etch processes.

SUMMARY

Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.

Embodiments of the invention include methods of etching a patterned substrate. The methods include placing the patterned substrate in a substrate processing region of a substrate processing chamber. The patterned substrate includes a horizontal Si(100) facet disposed between two adjacent silicon oxide portions. The methods further include flowing a halogen-containing precursor into a remote plasma region while forming a remote plasma in the remote plasma region to produce plasma effluents. The halogen-containing precursor includes one or both of chlorine and bromine. The methods further include flowing the plasma effluents into the substrate processing region through through-holes in a showerhead. The methods further include selectively etching the remaining silicon portion to form two Si(111) faces which intersect to form a V-shaped trench. The patterned substrate is not exposed to external atmosphere between placing the patterned substrate into the substrate processing region and selectively etching the remaining silicon portion. The substrate processing region is plasma-free and fluorine-free during the selectively etching operation.

Embodiments of the invention include methods of etching a patterned substrate. The methods include placing the patterned substrate in a substrate processing region of a substrate processing chamber. The patterned substrate includes a flat silicon facet disposed between two adjacent silicon-containing portions. The flat silicon facet is covered with a native oxide. The methods further include flowing a first halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to remove the native oxide and initiate a trench in the flat silicon facet to form a remaining silicon portion. The first halogen-containing precursor includes one or more of fluorine, chlorine and bromine. The methods further include flowing a second halogen-containing precursor into a remote plasma region while forming a remote plasma having a remote plasma power in the remote plasma region to produce plasma effluents. The second halogen-containing precursor comprises one or both of chlorine and bromine. The methods further include flowing the plasma effluents into the substrate processing region through through-holes in a showerhead. The methods further include selectively etching the remaining silicon portion to form two opposing silicon facets which form a substantially V-shaped trench. The patterned substrate is not exposed to external atmosphere between placing the patterned substrate into the substrate processing region and selectively etching the remaining silicon portion. Any local plasma power applied to the substrate processing region during the selectively etching operation is less than 15% of the remote plasma power and the substrate processing region and the remote plasma region are each devoid of fluorine during the selectively etching operation.

Embodiments of the invention include methods of etching a patterned substrate. The methods include placing the patterned substrate in a substrate processing region of a substrate processing chamber. The patterned substrate includes a silicon portion disposed between two adjacent masking portions. The methods further include flowing a halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to initiate a trench in the silicon portion to form a remaining silicon portion. The methods further include flowing molecular chlorine or molecular bromine into a remote plasma region while forming a remote plasma in the remote plasma region to produce plasma effluents. The methods further include flowing the plasma effluents into the substrate processing region through through-holes in a showerhead. The methods further include selectively etching the remaining silicon portion to form a “V”-shaped trench in the remaining silicon portion.

Additional embodiments and features are set forth in part in the description that follows, and in part will become apparent to those skilled in the art upon examination of the specification or may be learned by the practice of the embodiments. The features and advantages of the embodiments may be realized and attained by means of the instrumentalities, combinations, and methods described in the specification.

DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the embodiments may be realized by reference to the remaining portions of the specification and the drawings.

FIG. 1 is a flow chart of a gas-phase selective etch process according to embodiments.

FIGS. 2A, 2B, 2C and 2D are schematics of a trench during a gas-phase selective etch process according to embodiments.

FIG. 3A shows a schematic cross-sectional view of a substrate processing chamber according to embodiments.

FIG. 3B shows a schematic cross-sectional view of a portion of a substrate processing chamber according to embodiments.

FIG. 3C shows a bottom view of a showerhead according to embodiments.

FIG. 4 shows a top view of an exemplary substrate processing system according to embodiments.

In the appended figures, similar components and/or features may have the same reference label. Further, various components of the same type may be distinguished by following the reference label by a dash and a second label that distinguishes among the similar components. If only the first reference label is used in the specification, the description is applicable to any one of the similar components having the same first reference label irrespective of the second reference label.

DETAILED DESCRIPTION

Methods of producing V-shaped trenches in crystalline substrates are described. The methods involve processing a patterned substrate with etch masking materials defining each side of exposed silicon (100). The exposed silicon (100) is exposed to remotely-excited halogen-containing precursor including chlorine or bromine. The plasma effluents formed from the halogen-containing precursor preferentially remove silicon from all exposed facets other than silicon (111). Etching the crystalline substrates with the plasma effluents produce at least two silicon (111) facets between two adjacent masking elements. Forming the silicon (111) facets may be accelerated by pretreating the crystalline substrates using a halogen-containing precursor locally excited in a biased plasma to initiate the generation of the trench.

Gas-phase (or “dry”) etch processes have been developed to either isotropically or anisotropically remove material from a patterned substrate. Isotropic dry etch processes remove all material at an even rate regardless of where the material is located. Anisotropic dry etch processes have a preferred direction generally defined by a plasma bias voltage. The dry etch processes described herein do not adhere to either of these two descriptions. Once a trench is generated in a Si(100) facet, there exist exposed Si(111), Si(110), Si(100) and other facets on an patterned substrate. The dry etches described herein have been found to preferentially etch into all facets except Si(111) presumably because Si(111) is more stable and/or possesses a surface bonding structure which is less conducive to etchant reactants. The etch processes presented herein generate and then develop a desirably regular Si(111) facet with few lattice dislocations or other defects. A quality Si(111) facet may be conducive to a variety of subsequent operations such as epitaxial growth of another crystal thereon. Beginning from a horizontal Si(100) facet allows the formation of a symmetric V-shaped trench having Si(111) facets angled at about 54.7° from the horizontal and about 70.6° from one another. The “V”-shaped trench exhibits an angle of between 69° and 72° in embodiments.

In order to better understand and appreciate embodiments of the invention, reference is now made to FIG. 1 which is a method of forming a trench 101 and to FIGS. 2A, 2B, 2C and 2D which are cross-sectional views of the trench during method 101 according to embodiments. Prior to the first operation, a structure is formed in a patterned substrate. Two adjacent masking portions 210-1 (e.g. silicon oxide) are shown on either side of single-crystal silicon 201. Single-crystal silicon 201 is flush with the dashed line prior to the start of method 101 and the exposed portion at the dashed line is a Si(100) facet. Single-crystal silicon 201 may be described herein as “between” the two adjacent masking portions 210-1 even in cases like FIG. 2A which shows the two adjacent masking portions 210-1 at a slightly higher level (away from the substrate). The silicon portion 201 may have a horizontal Si(100) facet prior to the start of the methods presented herein. “Top” and “Up” will be used herein to describe portions/directions perpendicularly distal from the substrate plane and further away from the center of mass of the substrate in the perpendicular direction. “Vertical” will be used to describe items aligned in the “Up” direction towards the “Top”. The meaning of “Horizontal” will now be understood to mean in a plane parallel to the plane of the substrate. The patterned substrate is then placed in a substrate processing region in operation 110.

Chlorine (Cl₂) is flowed into a remote plasma system and through the through-holes of a showerhead into the substrate processing region (operation 120). The chlorine may also be directly introduced into the substrate processing region since remote excitation is not necessary for this part of gas-phase selective etch process 101. The Cl₂ is excited in a local plasma formed in the substrate processing region. The remote plasma system is positioned next to the substrate processing region and fluidly coupled through the showerhead. The local plasma may be a capacitively-coupled plasma (CCP) conducive to biasing the plasma relative to the patterned substrate which accelerates ions from the plasma into the patterned substrate to enhance reaction. More generally, a halogen-containing precursor is flowed into the remote plasma region and on into the substrate processing region. The halogen of this halogen-containing precursor may be selected with less specificity than the halogen-containing precursor described in later operations with reference to remote excitation. The halogen-containing precursor may include at least one precursor selected from F, ClF₃, F₂, SF₆, CF₄, NF₃, XeF₂, HF, Cl₂, XeCl₂, BCl₃, HCl, HBr, Br₂ and BBr₃. The halogen-containing precursor may be devoid of oxygen and/or devoid of carbon in embodiments. Some of single-crystal silicon 201 is selectively removed to form single-crystal silicon 201-1 shown in the cross-sectional view of FIG. 2A. Operation 130 not only removes some of single-crystal silicon 201 between the two adjacent masking portions 210, but also may be helpful at removing any native oxide which may be initially present on single-crystal silicon 201. Substrate processing region and/or remote plasma region may be devoid of oxygen during operation 130 to avoid forming silicon oxide in embodiments. Operation 120 may further include flowing a hydrogen-containing precursor (e.g. including at least one of molecular hydrogen (H₂) and ammonia (NH₃) in embodiments) into the substrate processing region directly and/or by way of the remote plasma region according to embodiments.

At this point in the method, the trench has been started but the facets are not well defined and, in fact, many different crystal facets are exposed on the walls of the trench. The next operation is tailored to preferentially remove all facets other than Si(111). In some embodiments, operations 120 and 130 are not used and on operations 110, 140-170 are performed, however, the overall etch time needs to be increased. Chlorine (Cl₂) is once again flowed into the remote plasma (operation 140). A remote plasma is formed from the chlorine and plasma effluents are formed and passed through the through-holes in the showerhead into the substrate processing region. The remote plasma is formed by applying a remote plasma power to the remote plasma region. The remote plasma may be a capacitively-coupled plasma (CCP) with the showerhead serving as one of the plate electrodes.

More generally, a second halogen-containing precursor is flowed into the remote plasma region. The halogen of this second halogen-containing precursor may comprise one or both of chlorine and bromine according to embodiments. A remote plasma is formed from the second halogen-containing precursor in the remote plasma region to form plasma effluents in operation 140. In operation 150, the plasma effluents are flowed into the substrate processing region housing the patterned substrate. The patterned substrate is selectively etched with the plasma effluents (operation 160) to preferentially remove all facets other than Si(111) in the remaining silicon portion between the two masking portions 210-1. Some of single-crystal silicon 201-1 is selectively removed to form single-crystal silicon 201-2 shown in the cross-sectional view of FIG. 2B. The patterned substrate is then removed from the substrate processing region in operation 170.

Fluorine may be more aggressive and less apt to preserve the integrity of the growing Si(111) facets according to embodiments. Accordingly, the substrate processing region and the remote plasma region may be fluorine-free during operations 140-160 in embodiments. The halogen-containing precursor may include at least one precursor selected from Cl₂, XeCl₂, BCl₃, HCl, HBr, Br₂ and BBr₃. The remote plasma region, the substrate processing region and the halogen-containing precursor may be devoid of oxygen and/or devoid of carbon, in embodiments, during operations 140-160. For example, substrate processing region and/or remote plasma region may be devoid of oxygen during operation 160 to avoid forming silicon oxide in embodiments. Similar to operation 120, operation 140 may further include flowing a hydrogen-containing precursor (e.g. including at least one of molecular hydrogen (H₂) and ammonia (NH₃) in embodiments) into the remote plasma region according to embodiments. Adding a hydrogen-containing precursor may speed up the process considerably.

FIGS. 2A-2B show two adjacent masking portions 210-1 (e.g. silicon oxide) formed effectively on a flat silicon (Si(100)) facet. Single-crystal silicon 201 is flush with the dashed line prior to the start of method 101, a trench is begun in operation 130 to leave a remaining silicon portion 201-1 in FIG. 2A and Si(111) facets are formed in V-trench silicon 201-2. At least one of two faces of the “V” are Si(111) facets according to embodiments. The “V” shape may not be atomically perfect, however, a distance between the lowest point in the substantially V-shaped trench and the line where two planes of the two opposing silicon facets (e.g. Si(111) facets) would intersect is less than 20 Å according to embodiments. Remaining silicon portion 201-1 and V-trench silicon 201-2 will be described as between the two adjacent masking portions 210-1 herein. FIGS. 2C-2D show two adjacent masking portions 210-2 which extend into the substrate and may be left in a completed device. Two adjacent masking portions 210-2 will still be referred to as mask elements herein. Method of forming a trench 101 is effective at forming a V-shaped trench in either configuration.

The patterned substrate may be transferred from one substrate processing region to another between operations 130 and 160 especially if fluorine is used for operation 130 and chlorine or bromine is used for operation 160. An air-tight seal may be maintained between the external atmosphere outside the substrate processing mainframe and the interior of the substrate processing mainframe any potential transfer, a trait which may also be referred to as transferring “without breaking vacuum”. In alternative embodiments, the patterned substrate stays in the same substrate processing region for both of operations 130 and operations 160.

In operation 120, the method includes applying power to a halogen-containing precursor in the local plasma regions (directly in the substrate processing region) to process the substrate. The plasma may be generated using known techniques (e.g., RF, capacitively-coupled, inductively coupled). A bias voltage is helpful to initiate growth of the trench and capacitively-coupled plasmas lend themselves to this purpose. The local plasma power may be applied to the substrate processing region at a level between 50 W and 1.5 kW, between 100 W and 1000 W or between 200 W and 500 W according to embodiments. The remote plasma power may be applied using inductive coils, in embodiments, in which case the remote plasma will be referred to as an inductively-coupled plasma (ICP) or may be applied using capacitive plates, in which case the remote plasma will be referred to as a capacitive-coupled plasma (CCP).

The method includes applying power to the halogen-containing precursor in the remote plasma regions to generate the plasma effluents. As would be appreciated by one of ordinary skill in the art, the plasma may include a number of charged and neutral species including radicals and ions. The plasma may be generated using known techniques (e.g., RF, capacitively coupled, inductively coupled). In an embodiment, the remote plasma power may be applied to the remote plasma region at a level between 100 W and 2 kW. The remote plasma power may be applied using inductive coils, in embodiments, in which case the remote plasma will be referred to as an inductively-coupled plasma (ICP) or may be applied using capacitive plates, in which case the remote plasma will be referred to as a capacitive-coupled plasma (CCP). During the remote plasma and the flowing of plasma effluents through the showerhead into the substrate processing region, the process may tolerate a relatively small amount of plasma in the substrate processing region. The small plasma power in the substrate processing region may be less than 10%, less than 5% or less than 3% of the remote plasma power according to embodiments.

The pressure in all remote plasma regions and all substrate processing regions described herein may be between about 0.01 Torr and 30 Torr or between about 0.1 Torr and 15 Torr in embodiments. The remote plasma region is disposed remote from the substrate processing region and may be separated from the substrate processing region by an ion suppressor and/or showerhead. The substrate processing region may be plasma-free during operation 160 to increase selectivity according to embodiments.

Generally speaking, the patterned substrate will comprise a single-crystal silicon portion and a masking portion which may include two elements on either side of a trench as view cross-sectionally. The masking portion, at the very least, will have a materially different stoichiometry from the silicon portion. The silicon portion may consist essentially of or consist only of silicon aside from unavoidable dopants or contaminants. The masking portion may contain atomic constituents other than silicon (i.e. not present in the silicon portion) according to embodiments. The masking portion may possess no silicon in embodiments. The masking portion may be a silicon-containing portion, in embodiments, and may be silicon oxide, silicon nitride or silicon oxynitride. For the sake of definition, atomic concentration and presence are defined herein in roughly the first eighty Angstroms of the exposed portions, coinciding with the detection zone for X-ray photoelectron spectroscopy (XPS).

For both local plasmas and remote plasmas described herein, the flows of the precursors into the plasma regions may further include one or more relatively inert gases such as He, N₂, Ar. The inert gas can be used to improve plasma stability, ease plasma initiation, and improve process uniformity. Argon is helpful, as an additive, to promote the formation of a stable plasma. Process uniformity is generally increased when helium is included. These additives are present in embodiments throughout this specification. Flow rates and ratios of the different gases may be used to control etch rates and etch selectivity.

In embodiments, an ion suppressor (which may be the showerhead) may be used to provide radical and/or neutral species for gas-phase etching using plasma effluents. The ion suppressor may also be referred to as an ion suppression element. In embodiments, for example, the ion suppressor is used to filter etching plasma effluents en route from the remote plasma region to the substrate processing region. The ion suppressor may be used to provide a reactive gas having a higher concentration of radicals than ions. Plasma effluents pass through the ion suppressor disposed between the remote plasma region and the substrate processing region. The ion suppressor functions to dramatically reduce or substantially eliminate ionic species traveling from the plasma generation region to the substrate. The ion suppressors described herein are simply one way to achieve a low electron temperature in the substrate processing region during the gas-phase etch processes described herein.

In embodiments, an electron beam is passed through the substrate processing region in a plane parallel to the substrate to reduce the electron temperature of the plasma effluents. A simpler showerhead may be used if an electron beam is applied in this manner. The electron beam may be passed as a laminar sheet disposed above the substrate in embodiments. The electron beam provides a source of neutralizing negative charge and provides a more active means for reducing the flow of positively charged ions towards the substrate and increasing the etch selectivity in embodiments. The flow of plasma effluents and various parameters governing the operation of the electron beam may be adjusted to lower the electron temperature measured in the substrate processing region.

The electron temperature may be measured using a Langmuir probe in the substrate processing region during excitation of a plasma in the remote plasma. In aluminum removal embodiments, the electron temperature may be less than 0.5 eV, less than 0.45 eV, less than 0.4 eV, or less than 0.35 eV. These extremely low values for the electron temperature are enabled by the presence of the electron beam, showerhead and/or the ion suppressor. Uncharged neutral and radical species may pass through the electron beam and/or the openings in the ion suppressor to react at the substrate. Such a process using radicals and other neutral species can reduce plasma damage compared to conventional plasma etch processes that include sputtering and bombardment. Embodiments of the present invention are also advantageous over conventional wet etch processes where surface tension of liquids can cause bending and peeling of small features.

The substrate processing region may be described herein as “plasma-free” during the etch processes described herein which involve remote plasma. “Plasma-free” does not necessarily mean the region is devoid of plasma. Ionized species and free electrons created within the plasma region may travel through pores (apertures) in the partition (showerhead) at exceedingly small concentrations. The borders of the plasma in the chamber plasma region are hard to define and may encroach upon the substrate processing region through the apertures in the showerhead. Furthermore, a low intensity plasma may be created in the substrate processing region without eliminating desirable features of the etch processes described herein. All causes for a plasma having much lower intensity ion density than the chamber plasma region during the creation of the excited plasma effluents do not deviate from the scope of “plasma-free” as used herein.

FIG. 3A shows a cross-sectional view of an exemplary substrate processing chamber 1001 with a partitioned plasma generation region within the processing chamber. During film etching, a process gas may be flowed into chamber plasma region 1015 through a gas inlet assembly 1005. A remote plasma system (RPS) 1002 may optionally be included in the system, and may process a first gas which then travels through gas inlet assembly 1005. The process gas may be excited within RPS 1002 prior to entering chamber plasma region 1015. Accordingly, the chlorine-containing precursor as discussed above, for example, may pass through RPS 1002 or bypass the RPS unit in embodiments.

A cooling plate 1003, faceplate 1017, ion suppressor 1023, showerhead 1025, and a substrate support 1065 (also known as a pedestal), having a substrate 1055 disposed thereon, are shown and may each be included according to embodiments. Pedestal 1065 may have a heat exchange channel through which a heat exchange fluid flows to control the temperature of the substrate. This configuration may allow the substrate 1055 temperature to be cooled or heated to maintain relatively low temperatures, such as between −20° C. to 200° C. A temperature of the patterned substrate may be between 0° and 200° during all etching operations described herein according to embodiments. Pedestal 1065 may also be resistively heated to relatively high temperatures, such as between 100° C. and 1100° C., using an embedded heater element.

Exemplary configurations may include having the gas inlet assembly 1005 open into a gas supply region 1058 partitioned from the chamber plasma region 1015 by faceplate 1017 so that the gases/species flow through the holes in the faceplate 1017 into the chamber plasma region 1015. Structural and operational features may be selected to prevent significant backflow of plasma from the chamber plasma region 1015 back into the supply region 1058, gas inlet assembly 1005, and fluid supply system 1010. The structural features may include the selection of dimensions and cross-sectional geometries of the apertures in faceplate 1017 to deactivate back-streaming plasma. The operational features may include maintaining a pressure difference between the gas supply region 1058 and chamber plasma region 1015 that maintains a unidirectional flow of plasma through the showerhead 1025. The faceplate 1017, or a conductive top portion of the chamber, and showerhead 1025 are shown with an insulating ring 1020 located between the features, which allows an AC potential to be applied to the faceplate 1017 relative to showerhead 1025 and/or ion suppressor 1023. The insulating ring 1020 may be positioned between the faceplate 1017 and the showerhead 1025 and/or ion suppressor 1023 enabling a capacitively coupled plasma (CCP) to be formed in the first plasma region.

The plurality of holes in the ion suppressor 1023 may be configured to control the passage of the activated gas, i.e., the ionic, radical, and/or neutral species, through the ion suppressor 1023. For example, the aspect ratio of the holes, or the hole diameter to length, and/or the geometry of the holes may be controlled so that the flow of ionically-charged species in the activated gas passing through the ion suppressor 1023 is reduced. The holes in the ion suppressor 1023 may include a tapered portion that faces chamber plasma region 1015, and a cylindrical portion that faces the showerhead 1025. The cylindrical portion may be shaped and dimensioned to control the flow of ionic species passing to the showerhead 1025. An adjustable electrical bias may also be applied to the ion suppressor 1023 as an additional means to control the flow of ionic species through the suppressor. The ion suppression element 1023 may function to reduce or eliminate the amount of ionically charged species traveling from the plasma generation region to the substrate. Uncharged neutral and radical species may still pass through the openings in the ion suppressor to react with the substrate.

Plasma power can be of a variety of frequencies or a combination of multiple frequencies. In the exemplary processing system the plasma may be provided by RF power delivered to faceplate 1017 relative to ion suppressor 1023 and/or showerhead 1025. The RF power may be between about 10 watts and about 5000 watts, between about 100 watts and about 2000 watts, between about 200 watts and about 1500 watts, or between about 200 watts and about 1000 watts in embodiments. The RF frequency applied in the exemplary processing system may be low RF frequencies less than about 200 kHz, high RF frequencies between about 10 MHz and about 15 MHz, or microwave frequencies greater than or about 1 GHz in embodiments. The plasma power may be capacitively-coupled (CCP) or inductively-coupled (ICP) into the remote plasma region.

A precursor, for example a chlorine-containing precursor, may be flowed into substrate processing region 1033 by embodiments of the showerhead described herein. Excited species derived from the process gas in chamber plasma region 1015 may travel through apertures in the ion suppressor 1023, and/or showerhead 1025 and react with an additional precursor flowing into substrate processing region 1033 from a separate portion of the showerhead. Alternatively, if all precursor species are being excited in chamber plasma region 1015, no additional precursors may be flowed through the separate portion of the showerhead. Little or no plasma may be present in substrate processing region 1033 during the remote plasma etch process. Excited derivatives of the precursors may combine in the region above the substrate and/or on the substrate to etch structures or remove species from the substrate.

The processing gases may be excited in chamber plasma region 1015 and may be passed through the showerhead 1025 to substrate processing region 1033 in the excited state. While a plasma may be generated in substrate processing region 1033, a plasma may alternatively not be generated in the processing region. In one example, the only excitation of the processing gas or precursors may be from exciting the processing gases in chamber plasma region 1015 to react with one another in substrate processing region 1033. As previously discussed, this may be to protect the structures patterned on substrate 1055.

FIG. 3B shows a detailed view of the features affecting the processing gas distribution through faceplate 1017. The gas distribution assemblies such as showerhead 1025 for use in the processing chamber section 1001 may be referred to as dual channel showerheads (DCSH) and are additionally detailed in the embodiments described in FIG. 3A as well as FIG. 3C herein. The dual channel showerhead may provide for etching processes that allow for separation of etchants outside of the processing region 1033 to provide limited interaction with chamber components and each other prior to being delivered into the processing region.

The showerhead 1025 may comprise an upper plate 1014 and a lower plate 1016. The plates may be coupled with one another to define a volume 1018 between the plates. The coupling of the plates may be so as to provide first fluid channels 1019 through the upper and lower plates, and second fluid channels 1021 through the lower plate 1016. The formed channels may be configured to provide fluid access from the volume 1018 through the lower plate 1016 via second fluid channels 1021 alone, and the first fluid channels 1019 may be fluidly isolated from the volume 1018 between the plates and the second fluid channels 1021. The volume 1018 may be fluidly accessible through a side of the gas distribution assembly 1025. Although the exemplary system of FIGS. 3A-3C includes a dual-channel showerhead, it is understood that alternative distribution assemblies may be utilized that maintain first and second precursors fluidly isolated prior to substrate processing region 1033. For example, a perforated plate and tubes underneath the plate may be utilized, although other configurations may operate with reduced efficiency or not provide as uniform processing as the dual-channel showerhead as described.

In the embodiment shown, showerhead 1025 may distribute via first fluid channels 1019 process gases which contain plasma effluents upon excitation by a plasma in chamber plasma region 1015. In embodiments, the process gas introduced into RPS 1002 and/or chamber plasma region 1015 may contain chlorine, e.g., Cl₂. The process gas may also include a carrier gas such as helium, argon, nitrogen (N₂), etc. Plasma effluents may include ionized or neutral derivatives of the process gas and may also be referred to herein as a radical-chlorine precursor referring to the atomic constituent of the process gas introduced.

FIG. 3C is a bottom view of a showerhead 1025 for use with a processing chamber in embodiments. Showerhead 1025 corresponds with the showerhead shown in FIG. 3A. Through-holes 1031, which show a view of first fluid channels 1019, may have a plurality of shapes and configurations to control and affect the flow of precursors through the showerhead 1025. Small holes 1027, which show a view of second fluid channels 1021, may be distributed substantially evenly over the surface of the showerhead, even amongst the through-holes 1031, which may help to provide more even mixing of the precursors as they exit the showerhead than other configurations.

The chamber plasma region 1015 or a region in an RPS may be referred to as a remote plasma region. In embodiments, the radical-chlorine precursor is created in the remote plasma region and travels into the substrate processing region where it may or may not combine with additional precursors. In embodiments, the additional precursors are excited only by the radical-chlorine precursor. Plasma power may essentially be applied only to the remote plasma region in embodiments to ensure that the radical-chlorine precursor provides the dominant excitation. Cl₂ or another chlorine-containing precursor may be flowed into chamber plasma region 1015 at rates between about 5 sccm and about 500 sccm, between about 10 sccm and about 150 sccm, or between about 25 sccm and about 125 sccm in embodiments.

Combined flow rates of precursors into the chamber may account for 0.05% to about 20% by volume of the overall gas mixture; the remainder being carrier gases. The chlorine-containing precursor may be flowed into the remote plasma region, but the plasma effluents may have the same volumetric flow ratio in embodiments. In the case of the chlorine-containing precursor, a purge or carrier gas may be first initiated into the remote plasma region before the chlorine-containing gas to stabilize the pressure within the remote plasma region. Substrate processing region 1033 can be maintained at a variety of pressures during the flow of precursors, any carrier gases, and plasma effluents into substrate processing region 1033. The pressure may be maintained between 0.1 mTorr and 100 Torr, between 1 Torr and 20 Torr or between 1 Torr and 5 Torr in embodiments.

Embodiments of the dry etch systems may be incorporated into larger fabrication systems for producing integrated circuit chips. FIG. 4 shows one such processing system (mainframe) 1101 of deposition, etching, baking, and curing chambers in embodiments. In the figure, a pair of front opening unified pods (load lock chambers 1102) supply substrates of a variety of sizes that are received by robotic arms 1104 and placed into a low pressure holding area 1106 before being placed into one of the substrate processing chambers 1108a-f. A second robotic arm 1110 may be used to transport the substrate wafers from the holding area 1106 to the substrate processing chambers 1108a-f and back. Each substrate processing chamber 1108a-f, can be outfitted to perform a number of substrate processing operations including the dry etch processes described herein in addition to cyclical layer deposition (CLD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, degas, orientation, and other substrate processes.

Low pressure holding area 1106 is typically used as a transfer area between robotic arms 1104 and second robotic arm 1110. There may be two substrate transfer levels in low pressure holding area 1106. The lower level may be used to transfer substrates towards the substrate processing chambers 1108 and the upper level may be used to transfer substrates toward the pair of front opening unified pods 1102. The substrate processing chambers 1108a-f may be configured for depositing, annealing, curing and/or etching a film on the substrate wafer. In one configuration, all three pairs of chambers, e.g., 1108a-f, may be configured to etch a film on the substrate.

In the preceding description, for the purposes of explanation, numerous details have been set forth to provide an understanding of various embodiments of the present invention. It will be apparent to one skilled in the art, however, that certain embodiments may be practiced without some of these details, or with additional details.

As used herein “substrate” may be a support substrate with or without layers formed thereon. The patterned substrate may be an insulator or a semiconductor of a variety of doping concentrations and profiles and may, for example, be a semiconductor substrate of the type used in the manufacture of integrated circuits. Exposed “silicon” or “polysilicon” of the patterned substrate is predominantly Si but may include minority concentrations of other elemental constituents such as nitrogen, oxygen, hydrogen and carbon. Exposed “silicon” or “polysilicon” may consist of or consist essentially of silicon. Exposed “silicon nitride” of the patterned substrate is predominantly silicon and nitrogen but may include minority concentrations of other elemental constituents such as oxygen, hydrogen and carbon. “Exposed silicon nitride” may consist essentially of or consist of silicon and nitrogen. Exposed “silicon oxide” of the patterned substrate is predominantly SiO₂ but may include minority concentrations of other elemental constituents such as nitrogen, hydrogen and carbon. In embodiments, silicon oxide films etched using the methods taught herein consist essentially of or consist of silicon and oxygen. Analogous definitions will be understood for “titanium”, “titanium nitride”, “tantalum”, “tantalum nitride” and the other metal-containing exposed portions recited herein.

The term “precursor” is used to refer to any process gas which takes part in a reaction to either remove material from or deposit material onto a surface. “Plasma effluents” describe gas exiting from the chamber plasma region and entering the substrate processing region. Plasma effluents are in an “excited state” wherein at least some of the gas molecules are in vibrationally-excited, dissociated and/or ionized states. A “radical precursor” is used to describe plasma effluents (a gas in an excited state which is exiting a plasma) which participate in a reaction to either remove material from or deposit material on a surface. “Radical-chlorine” are radical precursors which contain chlorine but may contain other elemental constituents. Other halogens follow similar definitions. The phrase “inert gas” refers to any gas which does not form chemical bonds when etching or being incorporated into a film. Exemplary inert gases include noble gases but may include other gases so long as no chemical bonds are formed when (typically) trace amounts are trapped in a film.

The terms “gap” and “trench” are used throughout with no implication that the etched geometry has a large horizontal aspect ratio. Viewed from above the surface, trenches may appear circular, oval, polygonal, rectangular, or a variety of other shapes. A trench may be in the shape of a moat around an island of material. The term “via” is used to refer to a low aspect ratio trench (as viewed from above) which may or may not be filled with metal to form a vertical electrical connection. As used herein, an isotropic or a conformal etch process refers to a generally uniform removal of material on a surface in the same shape as the surface, i.e., the surface of the etched layer and the pre-etch surface are generally parallel. A person having ordinary skill in the art will recognize that the etched interface likely cannot be 100% conformal and thus the term “generally” allows for acceptable tolerances.

Having disclosed several embodiments, it will be recognized by those of skill in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the disclosed embodiments. Additionally, a number of well-known processes and elements have not been described to avoid unnecessarily obscuring the present invention. Accordingly, the above description should not be taken as limiting the scope of the invention.

Where a range of values is provided, it is understood that each intervening value, to the tenth of the unit of the lower limit unless the context clearly dictates otherwise, between the upper and lower limits of that range is also specifically disclosed. Each smaller range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is encompassed. The upper and lower limits of these smaller ranges may independently be included or excluded in the range, and each range where either, neither or both limits are included in the smaller ranges is also encompassed within the invention, subject to any specifically excluded limit in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”, and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a process” includes a plurality of such processes and reference to “the dielectric material” includes reference to one or more dielectric materials and equivalents thereof known to those skilled in the art, and so forth.

Also, the words “comprise,” “comprising,” “include,” “including,” and “includes” when used in this specification and in the following claims are intended to specify the presence of stated features, integers, components, or steps, but they do not preclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims

1. A method of etching a patterned substrate, the method comprising: placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a horizontal Si(100) facet disposed between two adjacent silicon oxide portions;flowing a first halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to initiate a trench in the horizontal Si(100) facet to form a remaining silicon portion, wherein the first halogen-containing precursor comprises one or more of fluorine, chlorine and bromine;flowing a second halogen-containing precursor into a remote plasma region while forming a remote plasma in the remote plasma region by applying a remote plasma power to produce plasma effluents, wherein the second halogen-containing precursor comprises one or both of chlorine and bromine;flowing the plasma effluents into the substrate processing region through through-holes in a showerhead; andselectively etching the remaining silicon portion to form two Si(111) faces which intersect to form a V-shaped trench, wherein the patterned substrate is not exposed to external atmosphere between placing the patterned substrate into the substrate processing region and selectively etching the remaining silicon portion; and wherein the substrate processing region is plasma-free and fluorine-free during the selectively etching operation.

2. The method of claim 1 wherein any plasma power applied to the substrate processing region is less than 10% of the remote plasma power during the selectively etching operation.

3. The method of claim 2 wherein the substrate processing region is plasma-free during the selectively etching operation.

4. The method of claim 1 wherein an electron temperature within the substrate processing region is below 0.5 eV during the selectively etching operation.

5. The method of claim 1 wherein the second halogen-containing precursor comprises one or more of Cl2, XeCl2, BCl3, HCl, HBr, Br2 and BBr3.

6. The method of claim 1 wherein flowing the second halogen-containing precursor into the remote plasma region further comprises flowing a hydrogen-containing precursor into the remote plasma region.

7. A method of etching a patterned substrate, the method comprising: placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a flat silicon facet disposed between two adjacent silicon-containing portions, wherein the flat silicon facet is covered with a native oxide;flowing a first halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to remove the native oxide and initiate a trench in the flat silicon facet to form a remaining silicon portion, wherein the first halogen-containing precursor comprises one or more of fluorine, chlorine and bromine;flowing a second halogen-containing precursor into a remote plasma region while forming a remote plasma having a remote plasma power in the remote plasma region to produce plasma effluents, wherein the second halogen-containing precursor comprises one or both of chlorine and bromine;flowing the plasma effluents into the substrate processing region through through-holes in a showerhead; andselectively etching the remaining silicon portion to form two opposing silicon facets which form a substantially V-shaped trench, wherein the patterned substrate is not exposed to external atmosphere between placing the patterned substrate into the substrate processing region and selectively etching the remaining silicon portion; wherein any local plasma power applied to the substrate processing region during the selectively etching operation is less than 15% of the remote plasma power and wherein the substrate processing region and the remote plasma region are each devoid of fluorine during the selectively etching operation.

8. The method of claim 7 wherein the substrate processing region is plasma-free during the selectively etching operation.

9. The method of claim 7 wherein a distance between the lowest point in the substantially V-shaped trench and a line where two planes of the two opposing silicon facets would intersect is less than 20 Å.

10. A method of etching a patterned substrate, the method comprising: placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises a silicon portion disposed between two adjacent masking portions;flowing a halogen-containing precursor into the substrate processing region while forming a local plasma in the substrate processing region to initiate a trench in the silicon portion to form a remaining silicon portion;flowing molecular chlorine or molecular bromine into a remote plasma region while forming a remote plasma in the remote plasma region to produce plasma effluents;flowing the plasma effluents into the substrate processing region through through-holes in a showerhead; andselectively etching the remaining silicon portion to form a “V”-shaped trench in the remaining silicon portion.

11. The method of claim 10 wherein the silicon portion has a horizontal Si(100) facet.

12. The method of claim 10 wherein a temperature of the patterned substrate is between 0° and 200°.

13. The method of claim 10 wherein at least one of two faces of the “V” are Si(111) facets.

14. The method of claim 10 wherein the “V”-shaped trench exhibits an angle of between 69° and 72° within the “V”.

15. The method of claim 10 wherein the substrate processing region is fluorine-free during the operation of selectively etching the remaining silicon portion.