The present invention relates to a vacuum deposition device that vaporizes a deposition material in a vacuum atmosphere and deposits the vaporized deposition material on a deposition target.
In a vacuum deposition device, an evaporation section and deposition target are disposed in a vacuum chamber, and a deposition material is vaporized and is deposited on the deposition target in a state where pressure in the vacuum chamber is reduced. In this case, the evaporation section is heated and the deposition material stored in the evaporation section is molten and evaporated, or the deposition material is vaporized by sublimation or the like and the vaporized deposition material is accumulated and deposited on a surface of the deposition target.
In such vacuum deposition, the mean free path of the deposition material vaporized from the evaporation section is extremely long, and the vaporized deposition material travels rectilinearly in the vacuum chamber. However, the whole deposition material does not travel to the deposition target. In other words, the whole deposition material does not adhere to a surface of the deposition target, and hence the use efficiency of the deposition material can decrease or the deposition rate can decrease.
Therefore, the following vacuum deposition device is disclosed (for example, Patent literature 1):
In order to produce a light emission layer and carrier transportation layer and the like of an organic electroluminescence (EL) element, a plurality of deposition materials are required to be co-deposited. In this case, a method of using a plurality of evaporation sections and depositing a plurality of vaporized materials on a deposition target in a mixed state of the materials is also disclosed (for example, Patent literature 2). Also in this case, the space having the plurality of evaporation sections and the deposition target is surrounded with a tubular body, so that the decrease in use efficiency of the deposition materials and decrease in deposition rate are reduced.
When a plurality of vaporized materials are co-deposited as discussed above, the deposition rate of each deposition material is required to be controlled so as to deposit the plurality of deposition materials on the surface of the deposition target at a determined mixing ratio. Therefore, a film thickness meter is disposed near each deposition material, the deposition rate of each deposition material is measured, the heating temperature of the heater of each evaporation section is feedback-controlled, and the deposition rate of each deposition material is adjusted so as to correspond to the determined mixing ratio.
In the above-mentioned method, however, vaporized deposition materials are mixed by reflection or re-evaporation on the inner surface of a tubular body. Therefore, to a film thickness meter for measuring the thickness of a deposition film of a certain deposition material, another deposition material that is not concerned can adhere. There is a possibility of disturbing correct measurement of the deposition rate by the film thickness meter and correct feedback control in a heater and fluctuating the deposition rate. Especially, when the mixing ratio of the deposition material whose film thickness is to be measured to all the deposition materials is low, namely several percentages or lower, the influence of the adhesion of another deposition material whose film thickness is not to be measured can become remarkable and correct film thickness measurement can become difficult.
The present invention addresses such a problem. The present invention provides a vacuum deposition device that can inhibit a deposition material other than the deposition material whose film thickness is to be measured from adhering to the film thickness meter during deposition of the deposition material and can improve the measurement accuracy of the thickness of the deposition film.
A vacuum deposition device of the present invention includes, in a vacuum chamber, a plurality of evaporation sections, a deposition target, a tubular body surrounding a space between the plurality of evaporation sections and the deposition target, and a film thickness meter. In the vacuum deposition device, a deposition material vaporized from the plurality of evaporation sections passes through the tubular body, reaches a surface of the deposition target, and is deposited on the surface. Between the film thickness meter and at least one of the plurality of evaporation sections, a guide tube is disposed which guides the deposition material vaporized from the evaporation section to the film thickness meter. An opening surface of the guide tube on the evaporation section side is disposed at substantially the same level as that of the opening surface of the evaporation section or inside the evaporation section.
In the present invention, preferably, the guide tube is extended to the inside of the evaporation section, and the length of a part of the guide tube inside the evaporation section is two or more times the square root of the area of the opening surface of the evaporation section.
In the present invention, at least one of the plurality of evaporation sections includes a lid body disposed at substantially the same level as that of the opening surface of the evaporation section or inside the evaporation section so as to block the opening of the evaporation section. The lid body includes the following elements:
Preferably, an opening area controlling means for allowing the opening area of the orifice for deposition to be adjusted is disposed on the lid body.
Preferably, an opening area controlling means for allowing the opening area of the orifice for film thickness measurement to be adjusted is disposed on the lid body.
In the present invention, preferably, a heating mechanism is disposed in at least one of the lid body and the guide tube, and a temperature adjusting mechanism for controlling the heating mechanism is provided.
The vacuum deposition device of the present invention can inhibit a deposition material other than the deposition material whose film thickness is to be measured from adhering to the film thickness meter during deposition of the deposition material, and hence can improve the measurement accuracy of the thickness of the deposition film.
An exemplary embodiment of the present invention is described hereinafter.
A tubular body 3 is disposed in the vacuum chamber 1. The tubular body 3 is formed of a closed-end square cylinder or circular cylinder, and an opening is formed as a tubular body opening 3a in the upper surface of the tubular body 3. A deposition target 4 of a substrate shape is disposed above the tubular body opening 3a such that the lower surface of the deposition target 4 faces the tubular body opening 3a. The deposition target 4 is not limited especially, and can be formed of a glass substrate or the like.
A tubular body heater 36 is wound on the outer periphery of the tubular body 3. The tubular body 3 can be heated by heating the tubular body heater 36 by power fed from a power supply 21 for tubular body heater that is connected to the tubular body heater 36. The power supply 21 for tubular body heater is disposed outside the vacuum chamber 1.
The tubular body 3 includes a temperature measuring means 12 for tubular body such as a thermocouple capable of measuring a temperature. The temperature measuring means 12 for tubular body is electrically connected to a tubular body temperature controller 26 that is disposed outside the vacuum chamber 1. The tubular body temperature controller 26 is connected to the power supply 21 for tubular body heater. By this configuration, based on the temperature measured by the temperature measuring means 12 for tubular body, the heat amount of the tubular body heater 36 can be varied by control of the electric power fed to it, and the temperature of the tubular body 3 can be adjusted.
The bottom 3c of the tubular body 3 includes a plurality of bottom holes 3b, and an evaporation section 2 is engaged and mounted in each bottom hole 3b. The upper surface of the evaporation section 2 includes an evaporation section opening 2a, and the evaporation section opening 2a is disposed at the same level as that of the bottom 3c.
In the example of
An evaporation section heater 35 is built in each evaporation section 2. Each evaporation section 2 can be heated by heating each evaporation section heater 35 by power fed from each power supply 20 for evaporation section heater that is connected to the evaporation section heater 35. Here, one power supply 20 for evaporation section heater is disposed for each evaporation section 2, and all power supplies 20 are disposed outside the vacuum chamber 1.
Each evaporation section 2 includes a temperature measuring means 11 for evaporation section such as a thermocouple capable of measuring a temperature. Each temperature measuring means 11 for evaporation section is electrically connected to each evaporation section temperature controller 25 that is disposed outside the vacuum chamber 1. Each evaporation section temperature controller 25 is connected to each power supply 20 for evaporation section heater. One evaporation section temperature controller 25 and one power supply 20 for evaporation section heater are disposed for each evaporation section 2. By this configuration, based on the temperature measured by the temperature measuring means 11 for evaporation section, the heat amount of each evaporation section heater 35 can be varied by control of the electric power fed to it, and the temperature of each evaporation section 2 can be adjusted.
A deposition material 9 is stored in each evaporation section 2. The deposition material 9 may be stored in a separately formed heating container such as a crucible.
The deposition material 9 may be made of any material, for example an organic material for forming organic electroluminescence. In the embodiment of
The film thickness meters 10 (10x and 10y) used in the vacuum deposition device A of the present invention are not especially limited as long as they can measure the thickness of the deposition film. For example, a quartz oscillator type film thickness meter may be used. The quartz oscillator type film thickness meter can automatically measure the thickness of the deposition film that is adhesively deposited on a surface of a quartz oscillator. In the present invention, a plurality of film thickness meters 10 (film thickness meters 10x and 10y in
The vacuum deposition device A of the present invention includes a guide tube 7. The guide tube 7 includes a space as a ventilation channel 7a inside it and includes openings at both ends thereof. As shown in
When one opening end of the guide tube 7 is disposed inside the evaporation section 2 as shown in
The other opening end (upper side) of the guide tube 7 is guided out of the tubular body 3 through a through hole 3d that is formed in a side wall surface of the tubular body 3, and is extended to a proximity of the film thickness meter 10 (10y) that is disposed outside the tubular body 3. The opening end on the upper side of the guide tube 7 may be in contact with the film thickness meter 10y. When the opening end on the upper side of the guide tube 7 and the film thickness meter 10y are not in contact with each other, preferably, the distance between them is 300 mm or less.
As discussed above, by providing the guide tube 7, the deposition material 9 (9y) vaporized from the evaporation section 2 (2y) travels from the one opening end of the guide tube 7 into the ventilation channel 7a inside the guide tube 7, passes through the ventilation channel 7a, travels out of the other opening end of the guide tube 7, and arrives at the film thickness meter 10y.
In the embodiments of
In the vacuum deposition device A of the present invention, a lid body 6 may be disposed on the guide tube 7 as shown in the embodiment of
The lid body 6 is formed in a plate shape, can be positioned on the upper surface of the evaporation section opening 2a, and blocks the evaporation section opening. Furthermore, the lid body 6 includes two holes: an orifice 17 for deposition and an orifice 16 for film thickness measurement. When the lid body 6 is disposed on the evaporation section 2 as discussed above, the orifice 17 for deposition and the orifice 16 for film thickness measurement are positioned at substantially the same level as that of the opening surface of the evaporation section 2.
The orifice 17 for deposition is a hole for guiding, into the tubular body 3, the deposition material 9y vaporized from the evaporation section 2y having the lid body 6. The shape of the orifice 17 for deposition is not especially limited. For example, the shape may be a circuit, and the diameter thereof is preferably 0.5 to 50 mm. The number of orifices 17 for deposition formed in the lid body 6 may be only one, or two or more.
The orifice 16 for film thickness measurement is a hole for guiding the deposition material 9y vaporized from the evaporation section 2y having the lid body 6 to the film thickness meter 10y that is disposed outside the tubular body 3. The shape of the orifice 16 for film thickness measurement is not especially limited. For example, the shape may be a circuit, and the diameter thereof is preferably 0.5 to 50 mm.
When the lid body 6 is disposed as discussed above, the guide tube 7 is disposed between the orifice 16 for film thickness measurement and the film thickness meter 10 as shown in
The lid body 6 may be positioned inside the evaporation section 2 as shown in
Furthermore, preferably, the diameter of the cross section of the guide tube 7 is larger than the diameter of the orifice 16 for film thickness measurement. In this case, the deposition material 9y having passed through the orifice 16 for film thickness measurement can be inhibited from leaking out of the guide tube 7, the error of film thickness measurement can be reduced to increase the measurement accuracy.
By the embodiments of
Next, a method of depositing a deposition material 9 to a deposition target 4 in the vacuum deposition device A of the present invention is described. In this description, as shown in
First, each deposition material 9 is stored in each heating container disposed in each evaporation section 2. For example, the first deposition material 9x may be stored in the first evaporation section 2x and the second deposition material 9y may be stored in the second evaporation section 2y, and vice versa. Next, the vacuum pump 50 is operated to decompress the inside of the vacuum chamber 1 into the vacuum state.
Then, by power fed from the power supply 20 for evaporation section heater and the power supply 21 for tubular body heater, the evaporation section heater 35 and tubular body heater 36 are heated, and each evaporation section 2 and the tubular body 3 are heated. At this time, the tubular body 3 is heated at a temperature at which all deposition materials 9, namely both the first deposition material 9x and the second deposition material 9y, are vaporized and are not decomposed. By such heating, each deposition material 9 is gradually evaporated through sublimation or melting, and thus the vaporization of each deposition material 9 starts.
The first deposition material 9x vaporized from the first evaporation section 2x that includes no lid body 6 travels directly toward the tubular body opening 3a, or travels toward it while being reflected on the inner wall surface of the tubular body 3. Finally, the first deposition material 9x arrives at and adheres to the lower surface of the deposition target 4, and is deposited on the deposition target 4 to produce a deposition film. The tubular body 3 is heated at the temperature at which the deposition materials 9x and 9y are vaporized, so that the deposition materials 9x and 9y can be inhibited from adhering to the inner wall surface of the tubular body 3.
While, the second deposition material 9y vaporized from the second evaporation section 2y that includes the lid body 6 passes through one of the orifice 17 for deposition and orifice 16 for film thickness measurement which are disposed in the lid body 6. The deposition material 9y having passed through the orifice 17 for deposition comes into the tubular body 3, and a deposition film is produced on the deposition target 4 similarly to the above description. The deposition material 9y having passed through the orifice 16 for film thickness measurement comes into the ventilation channel 7a of the guide tube 7, passes through the ventilation channel 7a, arrives at the film thickness meter 10y, and is deposited on the film thickness meter 10y.
Also in the vacuum deposition devices A of the embodiments of
There is a relationship between the thickness of the deposition film produced on the film thickness meter 10y and that of the deposition film produced on the deposition target 4, so that the thickness of the deposition film produced on the deposition target 4 can be indirectly detected based on the thickness value measured by the film thickness meter 10y. Therefore, when the thickness of the deposition film per unit time is measured by the film thickness meter 10y, a deposition rate is calculated. The deposition rate can be therefore varied based on the measurement result of the film thickness. In order to vary the deposition rate, the electric power to be supplied to the temperature measuring means 11 for evaporation section is adjusted.
In the vacuum deposition device A of the present invention, the guide tube 7 is disposed between one evaporation section 2 (2y) and one film thickness meter 10 (10y), so that the deposition material 9 (9x) vaporized from the other evaporation section 2 (2x) is inhibited from adhering to the film thickness meter 10y. Thus, the deposition material 9 (9x) stored in the other evaporation section 2 (2x), which is not a measuring object, is inhibited from adhering to the film thickness meter 10 (10y). The thickness of the deposition material 9 (9y) vaporized from the evaporation section 2 (2y) can be therefore more accurately measured. Therefore, feedback control to the evaporation section heater 35 based on the measurement result of the film thickness meter 10y can be more accurately performed, and fluctuation in deposition rate can be inhibited. Thus, the measurement accuracy by the film thickness meter 10y is improved, so that the thickness of the deposition film produced on the deposition target 4 can be more accurately controlled.
Furthermore, a deposition film more than a necessary amount is inhibited from adhering to the film thickness meter 10y. For example, when a quartz oscillator type film thickness meter is used as the film thickness meter 10y, reduction and deviation of the oscillating frequency or oscillating strength of the quartz oscillator can be minimized. Therefore, the lifetime of the quartz oscillator can be extended, advantageously. The adhesion amount of the deposition material 9y to the film thickness meter 10y can be finely adjusted, so that an effort to appropriately adjust the positional relationship between the evaporation section and the film thickness meter in response to the deposition rate to finely adjust the adhesion amount can be omitted.
Especially, when the lid body 6 is disposed in the evaporation section 2 and the orifice 16 for film thickness measurement is connected to the film thickness meter 10 through guide tube 7, the deposition material 9 vaporized from the other evaporation section 2 can be further inhibited from adhering to the film thickness meter 10. Therefore, comparing with the vacuum deposition device A including no lid body 6, the vaporized deposition material 9 can be more accurately guided to the film thickness meter 10 and deposition target 4, adhesion to an undesired place is reduced, and hence the above-mentioned effect becomes remarkable.
Next, another embodiment of the vacuum deposition device A of the present invention is described. For example, the orifice 17 for deposition may include an opening area controlling means 15. By the opening area controlling means 15, the opening area of the orifice 17 for deposition can be optionally adjusted, and the flow rate of the deposition material 9 vaporized from the evaporation section 2 can be controlled.
As the opening area controlling means 15, for example, a throttle mechanism 111 can be employed as shown in
The throttle blade members 62 are attached on the lid body 6 by inserting a support pin 60 into one corner of each throttle blade member 62, and each throttle blade member 62 is rotatable about the support pin 60.
The throttle blade members 62 can be rotated in response to an electric signal from the outside. Specifically, each throttle blade member 62 rotates about the support pin 60 along the upper surface of the lid body 6 toward the orifice 17 for deposition. Each throttle blade member 62 may rotate clockwise or counterclockwise, but preferably rotates so as to take the shortest distance (in the arrow direction in
As the opening area controlling means 15, for example, a rotating mechanism 101 may be employed as shown in
The plate member 64 is attached on the lid body 6 by inserting a support pin 60 to penetrate the plate member 64 from the surface. The plate member 64 can rotate about the support pin 60 along the upper surface of the lid body 6 (e.g. in the arrow direction in
The rotation of the plate member 64 allows the opening of the orifice 17 for deposition to be partially blocked, and the opening area is adjusted in response to the blocking degree. The plate member 64 can be returned to the original position, so that the opening of the orifice 17 for deposition can be opened or closed.
As another opening area controlling means 15, for example, a sliding mechanism 121 may be employed as shown in
When the plate member 64 slides along the rail members 63 in response to an electric signal sent from the outside, the opening of the orifice 17 for deposition is partially blocked, and the opening area is adjusted in response to the blocking degree. Since the plate member 64 can reciprocate between the ends of the pair of rail members 63, the sliding mechanism 121 can open or close the opening of the orifice 17 for deposition.
The vacuum deposition device A of the present invention may include various opening area controlling means 15 discussed above, so that an effort to separately form a plurality of lid bodies 6 for different opening areas of the orifice 17 for deposition can be omitted.
Furthermore, all opening area controlling means 15 can control the opening area of the orifice 17 for deposition to a desired value. Therefore, when the deposition rate of the deposition material 9 vaporized from the evaporation section 2 is intended to be varied, the deposition rate can be easily varied by varying the opening area. The opening area can be adjusted also during co-deposition, so that the deposition rate can be varied by adjusting the opening area even during deposition.
In the vacuum deposition device A of the present invention, the opening area controlling means 15 can be disposed also in the orifice 16 for film thickness measurement. Also in this case, by the opening area controlling means 15, the opening area of the orifice 16 for film thickness measurement can be optionally adjusted, and the flow rate of the deposition material 9 vaporized from the evaporation section 2 can be controlled.
As the opening area controlling means 15 to be disposed in the orifice 16 for film thickness measurement, as shown in
When the opening area controlling means 15 is disposed also in the orifice 16 for film thickness measurement, the opening area of the orifice 16 for film thickness measurement can be easily adjusted, and the flow rate and deposition rate of the deposition material 9 arriving at the film thickness meter 10 can be controlled.
The opening area controlling means 15 may be disposed in only one of the orifice 17 for deposition and orifice 16 for film thickness measurement, or may be in both of them. When the opening area controlling means 15 is disposed in both of the orifice 17 for deposition and orifice 16 for film thickness measurement, the orifice 17 and orifice 16 are opened or closed independently.
A lid body heater 37 is employed as the heating mechanism 40 disposed in the lid body 6, and is attached on the surface of the lid body 6. The lid body heater 37 is connected to a power supply 22 for lid body heater that is disposed outside the vacuum chamber. The lid body heater 37 generates heat by power fed from the power supply 22 for lid body heater, and thus heats the lid body 6.
As the temperature adjusting mechanism 41 for adjusting the temperature of the heating mechanism 40 such as the lid body heater 37, a lid body temperature controller 27 and a temperature measuring means 13 for lid body connected to the controller 27 can be employed. The temperature measuring means 13 for lid body can be disposed on the surface of the lid body 6. As, the temperature measuring means 13, for example, a thermocouple capable of measuring a temperature can be employed. The temperature measuring means 13 for lid body is electrically connected to the lid body temperature controller 27 that is disposed outside the vacuum chamber 1. The lid body temperature controller 27 is connected to the power supply 22 for lid body heater. By this configuration, based on the temperature measured by the temperature measuring means 13 for lid body, the heat amount of the lid body heater 37 can be varied by control of the electric power fed to it, and the temperature of the lid body 6 can be adjusted.
A guide tube heater 38 is employed as the heating mechanism 40 disposed in the guide tube 7, and is attached on the outer periphery of the guide tube 7. The guide tube heater 38 is connected to a power supply 23 for guide tube heater that is disposed outside the vacuum chamber. The guide tube heater 38 generates heat by power fed from the power supply 23 for guide tube heater, and thus heats the guide tube 7.
The heating mechanism 40 disposed in the guide tube 7 also includes a temperature adjusting mechanism 41 for adjusting the temperature of the heating mechanism 40. Specifically, a guide tube temperature controller 28 and a temperature measuring means 14 for guide tube connected to the controller 28 can be employed. The temperature measuring means 14 for guide tube can be disposed on the surface of the guide tube 7. As the temperature measuring means 14 for guide tube, for example, a thermocouple capable of measuring a temperature can be employed. The temperature measuring means 14 for guide tube is electrically connected to the guide tube temperature controller 28 that is disposed outside the vacuum chamber 1. By this configuration, based on the temperature measured by the temperature measuring means 14 for guide tube, the heat amount of the guide tube heater 38 can be varied by control of the electric power fed to it, and the temperature of the guide tube 7 can be adjusted.
In the present embodiment, the heating mechanism 40 and temperature adjusting mechanism 41 may be disposed in any one of the lid body 6 and guide tube 7, or may be disposed in both of them.
Since the heating mechanism 40 and temperature adjusting mechanism 41 are disposed in the lid body 6 or guide tube 7, the deposition material 9 can be inhibited from adhering to the lid body 6 or guide tube 7. Therefore, the possibility of varying the conductance of the orifice 17 for deposition and orifice 16 for film thickness measurement is reduced, the deposition rate becomes stable, and the thickness of the deposition film can be further strictly controlled. Conventionally, the deposition material 9 is apt to adhere to the lid body 6 or guide tube 7 and the deposition rate is often difficult to be controlled, dependently on the material and shape of the lid body 6 or guide tube 7. In the present invention, due to the above-mentioned configuration, the material and shape of the lid body 6 or guide tube 7 can be made to hardly affect this control.
In the present invention, the vacuum deposition device A may include no lid body 6, or may include, in the guide tube 7, a heating mechanism 40 and temperature adjusting mechanism 41 similar to those described above.
In the vacuum deposition device A of the present invention, the lid body 6 is disposed in the second evaporation section 2y in the embodiments of
Thus, the film thickness meters 10 are disposed correspondingly to the evaporation sections 2. For example, the film thickness meter 10x is disposed for the evaporation section 2x and the film thickness meter 10y is disposed for the evaporation section 2y. Therefore, the thickness of the deposition film of the deposition material 9 vaporized from each evaporation section 2 can be measured.
(Simulation verification by the vacuum deposition device A) A simulation of the deposition rate and thickness of the deposition film produced using the vacuum deposition device A of the present invention is described hereinafter. Specifically, the deposition rate from the evaporation section 2 when tris(8-hydroxyquinolinate) aluminum complex (Alq3) is deposited as the deposition material 9 is calculated using a direct simulation Monte Carlo method. In the simulation calculation, a calculation condition is set based on the molecular weight, molecular size, and evaporation temperature of Alq3.
In the vacuum deposition device A used for the simulation, the tubular body 3 has a rectangular square-cylinder shape, the width of the inner wall is 200 mm, the depth is 100 mm, the height is 200 mm, and the heating temperature of the tubular body 3 is 300° C. Two evaporation sections 2, namely the first evaporation section 2x and second evaporation section 2y, are disposed. Alq3 is stored in each of the evaporation sections 2. Each of the first evaporation section 2x and second evaporation section 2y has a cylindrical shape and includes an evaporation section opening 2a with a diameter of 30 mm. At this time, the area A of the evaporation section opening 2a is 706.5 mm2, and the value of 2√A is about 53.2 mm.
The centers of the evaporation section openings 2a of the first evaporation section 2x and second evaporation section 2y are positioned at a distance of 65 mm in the opposite directions (right and left) by 180° from the center of the bottom 3b of the tubular body 3.
First, the simulation when the lid body 6 and guide tube 7 are neither attached to the first evaporation section 2x nor the second evaporation section 2y is performed as reference. The simulation is performed under two conditions where the ratio of the deposition rate from the first evaporation section 2x to the deposition target 4 to that from the second evaporation section 2y to the deposition target 4 is 1:0.01 and 1:0.1.
The simulation (no lid body 6 and no guide tube 7) has the following result shown in
the deposition material 9x vaporized from the first evaporation section 2x arrives at the second film thickness meter 10y at a deposition rate that is 30 or more times the deposition rate of the deposition material 9y vaporized from the second evaporation section 2y.
In
The simulation is similarly performed in the following cases:
only the guide tube 7 is disposed in the second evaporation section 2y, and the opening surface of the guide tube 7 on the evaporation section 2 side is disposed at the same level as that of the opening surface of the evaporation section 2;
only the guide tube 7 is disposed in the second evaporation section 2y, and the opening surface of the guide tube 7 on the evaporation section 2 side is extended into the evaporation section 2 by 55 mm; and
both the lid body 6 and the guide tube 7 are disposed in the second evaporation section 2y, and the lid body 6 is disposed at the same level as that of the evaporation section openings 2a.
In the case where the opening surface of the guide tube 7 on the evaporation section 2 side is extended into the evaporation section 2 by 55 mm, the extension direction of the guide tube 7 into the evaporation section 2 is substantially orthogonal to the opening surface of the evaporation section 2. The length of 55 mm is longer than the value of 2√A (53.2 mm).
The lid body 6 has a circular orifice 17 for deposition with a diameter of 2 mm and a circular orifice 16 for film thickness measurement with a diameter of 2 mm. The opening surface of one end of the guide tube 7 faces the orifice 16 for film thickness measurement, and forms an angle of 60° with respect to the surface of the lid body 6 (or evaporation section opening 2a). The other end of the guide tube 7 is extended to a proximity of the second film thickness meter 10y through the through hole 3d formed in the side wall surface of the tubular body 3.
Similarly, evaluation is performed under two conditions where the ratio of the deposition rate from the first evaporation section 2 to the deposition target 4 to that from the second evaporation section 2 to the deposition target 4 is 1:0.01 and 1:0.1.
First, the case where the ratio between the deposition rates is 1:0.01 is described in detail. According to the result of the ratio between deposition rates shown in
As shown in
Here, it is assumed that the deposition rate of the deposition material from the second evaporation section 2y to deposition target 4 is 0.01 Å/s. In this case, as shown in
When both of the lid body 6 and the guide tube 7 are disposed and the diameter of the orifice 16 for film thickness measurement is varied, the deposition rate varies with the diameter. For example, when the diameter of the orifice 16 for film thickness measurement is 2 mm, the deposition rate of the deposition material 9y from the second evaporation section 2y to the second film thickness meter 10y is about 25 times that when no lid body 6 and no guide tube 7 is disposed. Thus, it is indicated that the influence of the adhesion of the deposition material 9x is small when both of the lid body 6 and the guide tube 7 are disposed.
When it is assumed that an appropriate deposition rate for performing stable control for a long time is about 0.1 Å/s, the diameter of the orifice 16 for film thickness measurement is preferably set at 2 mm according to
Number | Date | Country | Kind |
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2011-058303 | Mar 2011 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2012/056256 | 3/12/2012 | WO | 00 | 9/9/2013 |