Claims
- 1. A vapor deposition apparatus comprising:
- a vacuum chamber for receiving an active gas, an inert gas or a mixture of said active gas and said inert gas;
- a reactor disposed within said vacuum chamber for receiving a gaseous raw material;
- a heating means attached to said reactor for heating said received gaseous raw material up to a temperature of producing a gaseous thin-film forming substance;
- a nozzle attached to an upper end of said reactor, and having a cross sectional area smaller than that of an interior space of said reactor for blowing out said produced gaseous thin-film forming substance into said vacuum chamber, said cross sectional area of said nozzle being determined in such a manner as to bring about a pressure difference between said interior space and said vacuum chamber, which pressure difference makes said blown-out gaseous thin-film forming substance a state of cluster;
- a counter electrode situated in said vacuum chamber, holding a substrate oppositely to said reactor, and maintained at an electric potential equal or negative to that of said reactor and said nozzle;
- a grid in the form of a net placed between said reactor and said counter electrode, and having openings large enough to pass said gaseous thin-film forming substance;
- an electric source means electrically connected to both said counter electrode and said reactor for maintaining said grid at an electric potential positive to those of both said counter electrode and said reactor; and
- a filament placed in said vacuum chamber at a position between said reactor and said grid for emitting thermoelectrons necessary to ionize said gaseous thin-film forming substance and said active gas, said inert gas or said mixture.
- 2. A vapor deposition apparatus according to claim 1, in which said gaseous raw material is silane, tetrachlorosilane plus hydrogen, silane plus oxygen, a metal halide, triisopropyl aluminium, nickel carbonyl or trimethyl gallium plus arsine.
- 3. A vapor deposition apparatus according to claim 1, in which said substrate is made of a material with poor thermal stability.
- 4. A vapor deposition apparatus according to claim 3, in which said material is an organic plastic.
- 5. A vapor deposition apparatus according to claim 1, in which a high frequency electromagnetic field is applied between said grid and said counter electrode.
Priority Claims (2)
Number |
Date |
Country |
Kind |
61-238435 |
Oct 1986 |
JPX |
|
62-175656 |
Jul 1987 |
JPX |
|
CROSS-REFERENCE TO RELATED APPLICATION
The present application is a continuation-in-part of application Ser. No. 102,857 field on Sept. 30, 1987, now abandoned.
Foreign Referenced Citations (5)
Number |
Date |
Country |
50-84472 |
Feb 1975 |
JPX |
50-84474 |
Sep 1975 |
JPX |
52-78777 |
Jul 1977 |
JPX |
59-89763 |
May 1984 |
JPX |
59-157279 |
Sep 1984 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Bunshah, Deposition Technologies for Films and Coatings, Noyes Publications, Park Ridge, N.J., U.S.A. .COPYRGT.1982, p. 258. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
102857 |
Sep 1987 |
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