Embodiments of the present disclosure relate to a vapor deposition mask, a vapor deposition mask with a frame, a vapor deposition mask preparation body, a method of manufacturing a vapor deposition mask, a method of manufacturing an organic semiconductor element, a method of manufacturing an organic EL display, and a method of forming a pattern.
Formation of a vapor deposition pattern using a vapor deposition mask is typically performed by bringing a vapor deposition mask having an opening corresponding to a pattern to be fabricated by vapor deposition and a vapor deposition target into intimate contact with each other and depositing a vapor deposition material emitted from a vapor deposition material source on the vapor deposition target through the opening.
As the vapor deposition mask used for formation of a vapor deposition pattern described above, for example, a vapor deposition mask is known that includes a resin mask having a resin mask opening corresponding to a pattern to be fabricated by vapor deposition and a metal mask having a metal mask opening (referred to also as a slit) stacked on one another (Patent Document 1, for example).
Japanese Patent No. 5288072
A primary object of embodiments of the present disclosure is to provide a vapor deposition mask including a resin mask and a frame-equipped vapor deposition mask including the vapor deposition mask fixed to a frame that can form a more precise vapor deposition pattern, to provide a vapor deposition mask preparation body used for manufacturing the vapor deposition mask and a method of manufacturing the vapor deposition mask, and to provide a method of manufacturing an organic semiconductor element that can accurately manufacture the organic semiconductor element and a method of manufacturing an organic EL display that can accurately manufacture the organic EL display.
A vapor deposition mask according to an embodiment of the present disclosure is a vapor deposition mask in which a metal layer is provided on a resin mask, in which the resin mask has an opening required to form a vapor deposition pattern, the resin mask contains a resin material, the metal layer contains a metal material, and provided that a glass transition temperature (Tg) of the resin material plus 100° C. is an upper limit temperature, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, an integrated value of a linear expansion curve for the resin mask over a range from a temperature of 25° C. to the upper limit temperature divided by an integrated value of a linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature falls within a range from 0.55 to 1.45 inclusive.
The resin material may be a cured polyimide resin.
The metal material may be an iron alloy.
A frame-equipped vapor deposition mask according to an embodiment of the present disclosure includes a vapor deposition mask fixed to a frame, and incorporates the vapor deposition mask described above.
A vapor deposition mask preparation body according to an embodiment of the present disclosure is a vapor deposition mask preparation body from which a vapor deposition mask in which a metal layer is provided on a resin mask is derived, in which a metal layer is provided on a resin plate, the resin plate contains a resin material, the metal layer contains a metal material, and provided that a glass transition temperature (Tg) of the resin material plus 100° C. is an upper limit temperature, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, an integrated value of a linear expansion curve for the resin plate over a range from a temperature of 25° C. to the upper limit temperature divided by an integrated value of a linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature falls within a range from 0.55 to 1.45 inclusive.
In the vapor deposition mask preparation body described above, the resin material may be a cured polyimide resin.
In the vapor deposition mask preparation body described above, the metal material may be an iron alloy.
A method of manufacturing a vapor deposition mask according to an embodiment of the present disclosure is a method of manufacturing a vapor deposition mask in which a metal layer is provided on a resin mask, including: a step of providing a metal layer containing a metal material on a resin plate containing a resin material; and a step of forming an opening required to form a vapor deposition pattern in the resin plate, in which the metal layer is provided on the resin plate in such a manner that, provided that a glass transition temperature (Tg) of the resin material plus 100° C. is an upper limit temperature, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, an integrated value of a linear expansion curve for the resin mask over a range from a temperature of 25° C. to the upper limit temperature divided by an integrated value of a linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature falls within a range from 0.55 to 1.45 inclusive.
In the method of manufacturing a vapor deposition mask described above, as the resin plate, a resin plate including a cured polyimide resin may be used.
A method of manufacturing an organic semiconductor element according to an embodiment of the present disclosure uses the vapor deposition mask described above or the frame-equipped vapor deposition mask described above.
A method of manufacturing an organic EL display according to an embodiment of the present disclosure uses the organic semiconductor element manufactured in the manufacturing method described above.
A method of forming a pattern according to an embodiment of the present disclosure uses the vapor deposition mask described above or the frame-equipped vapor deposition mask described above.
With the vapor deposition mask or the frame-equipped vapor deposition mask according to an embodiment of the present disclosure, a vapor deposition pattern can be accurately formed. With the vapor deposition mask preparation body or the method of manufacturing a vapor deposition mask according to an embodiment of the present disclosure, a vapor deposition mask that allows precise formation of a vapor deposition pattern can be manufactured. With the method of manufacturing an organic semiconductor element, an organic semiconductor element can be accurately manufactured. With the method of manufacturing an organic EL display according to an embodiment of the present disclosure, an organic EL display can be accurately manufactured.
In the following, embodiments of the present invention will be described with reference to the drawings and the like. Embodiments of the present invention can be implemented in many different forms and should not be construed as being limited to the description of the embodiments illustrated below. In the drawings, for the sake of clarification of the description, components may be exaggerated in width, thickness, shape or the like. However, these are just examples and not intended to limit the interpretation of the embodiments of the present invention. In addition, in this specification and the drawings, the same elements as those that have been described earlier with reference to another drawing already described may be denoted by the same reference symbols, and detailed descriptions thereof may be omitted as required. In addition, although terms such as above or below will be used for the sake of convenience of description, the vertical direction may be reversed. The same holds true for the horizontal direction.
<<Vapor Deposition Mask>>
A vapor deposition mask 100 according to an embodiment of the present disclosure includes a metal layer 10 provided on a resin mask 20, and the resin mask 20 has an opening 25 required to form a vapor deposition pattern (see
With a vapor deposition mask according to an embodiment of the present disclosure, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, provided that the glass transition temperature (Tg) of the resin material contained in the resin mask 20 plus 100° C. is an upper limit temperature, the integrated value of the linear expansion curve for the resin mask over a range from a temperature of 25° C. to the upper limit temperature divided by the integrated value of the linear expansion curve for the metal layer 10 over the range from the temperature of 25° C. to the upper limit temperature is defined to fall within a range from 0.55 to 1.45 inclusive.
In summary, the vapor deposition mask according to the embodiment of the present disclosure includes the metal layer 10 provided on the resin mask 20, and satisfies the following conditions.
Condition 1: the resin mask has an opening required to form a vapor deposition pattern.
Condition 2: the resin mask contains a resin material.
Condition 3: the metal layer contains a metal material.
Condition 4: in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, provided that the glass transition temperature (Tg) of the resin material contained in the resin mask plus 100° C. is an upper limit temperature, the integrated value of the linear expansion curve for the resin mask over a range from a temperature of 25° C. to the upper limit temperature divided by the integrated value of the linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature is defined to fall within a range from 0.55 to 1.45 inclusive.
In the graph showing a relationship between the linear expansion curves in
0.55≤(total area of A region and C region)/(total area of B region and C region)≤1.45 Formula (1)
On the other hand, in the graph showing a relationship between the linear expansion curves in
0.55≤(total area of B region and C region)/(total area of A region and C region)≤1.45 Formula (2)
In the graph showing a relationship between the linear expansion curves in
0.55≤((total area of A region and B region)/area of B region)≤1.45 Formula (3)
However, in the graph showing a relationship between the linear expansion curves in
On the other hand, in the graph showing a relationship between the linear expansion curves in
0.55≤(area of B region/(total area of A region and B region))≤1.45 Formula (4)
However, in the graph showing a relationship between the linear expansion curves in
(Method of Creating Linear Expansion Curve)
The vapor deposition mask is separated into the resin mask and the metal layer, which are cut to provide samples having a width of 5 mm and a length of 18 mm (a resin mask sample and a metal layer sample). The resin mask sample is obtained by removing the metal layer from the vapor deposition mask by etching. The metal layer sample is obtained by removing the resin mask from the vapor deposition mask by etching. As for the resin mask, a part that has no opening is cut. If the metal layer is small and cannot be cut into a sample having a width of 5 mm and a length of 18 mm, a metal layer that is made of the same metal material and has the same thickness as the metal layer of the vapor deposition mask is prepared, and the prepared metal layer is cut into a metal layer sample having a width of 5 mm and a length of 18 mm.
For each of the cut resin mask sample and metal layer sample, a CTE curve (linear expansion curve) with respect to 25° C. is created according to a linear expansion rate testing method in conformity with JIS-K-7197(1991). In the linear expansion rate test, the resin mask sample and the metal layer sample are held by a metal jig at the opposite edge parts thereof, which have a width of 1.5 mm, so that the actual sample length is 15 mm. The humidity the atmosphere during the measurement is controlled to be 55±2% RH.
The linear expansion rate test is performed twice for each sample. The CTE curve (linear expansion curve) with respect to 25° C. is created based on the second measurement data, which is obtained after the operation of the testing device and the condition of the sample have sufficiently settled down.
In this way, a CTE curve from 25° C. to a predetermined temperature is obtained.
The device used is TMA (EXSTAR6000, Seiko Instruments Inc.).
The vertical axis of the graph of the CTE curve indicates linear expansion rate, which is calculated as ΔL/L×100 (ΔL is the sample length at an arbitrary temperature minus the sample length at 25° C., and L is the sample length at 25° C.). That is, the linear expansion rate (%) at 25° C. is 0.
(Calculation of Integrated Value)
For each of the resin mask sample and the metal layer sample, the integrated value of the CTE curve over the region from 25° C. to the upper limit temperature is calculated, and the ratio between the integrated values for the resin mask sample and the metal layer sample is determined by dividing the integrated value for the CTE curve of the resin mask sample by the integrated value for the CTE curve of the metal layer sample. The vapor deposition mask according to the embodiment of the present disclosure satisfies a condition that the ratio determined in this manner falls within a range from 0.55 to 1.45 inclusive.
The glass transition temperature (Tg) referred to in this specification means a temperature that is defined in JIS-K-7121 (2012) and is determined by measurement of a variation in calorie by differential scanning calorimetry (DSC) (DSC method).
The resin mask 20 may contain only one kind of resin material or contain two or more kinds of resin materials. When the resin mask 20 contains two or more kinds of resin materials, the highest glass transition temperature (Tg) of the glass transition temperatures (Tg) of the resin materials detected by DSC (differential scanning calorimetry) is used for prescribing the upper limit temperature.
With the vapor deposition mask according to the embodiment of the present disclosure that satisfies the conditions 1 to 4 described above, in particular, the condition 4 described above, occurrence of a variation in dimension or position of the opening 25 formed in the resin mask 20 can be inhibited. Therefore, with the vapor deposition mask according to the embodiment of the present disclosure, a vapor deposition pattern can be accurately formed.
More specifically, by configuring the vapor deposition mask so as to satisfy the condition 4 described above, the difference in amount of shrinkage between the resin mask 20 and the metal layer 10 can be reduced. This allows occurrence of a variation in dimension or position of the opening 25 formed in the resin mask 20 to be inhibited.
For example, when the resin mask 20 having the opening 25 is obtained by applying a coating liquid containing a resin material that is cured by heat, heating the coating liquid at a temperature higher than the setting temperature of the resin material, and forming the opening 25 in the resulting resin plate (resin layer), if the resin material is selected so that the integrated value for the linear expansion curve of the resin mask over the range from 25° C. to the upper limit temperature divided by the integrated value for the linear expansion curve of the metal layer 10 over the range from 25° C. to the upper limit temperature falls within the range from 0.55 to 1.45 inclusive, the amount of shrinkage of the resin mask when the temperature is lowered from the temperature higher than the setting temperature to almost room temperature can be brought close to the amount of shrinkage of the metal layer 10. By reducing the difference in amount of shrinkage between the resin mask and the metal layer 10, the difference in internal stress between the resin mask 20 and the metal layer 10 can be reduced. This allows occurrence of a variation in dimension or position of the opening 25 in the resin mask 20 to be inhibited.
When the conditions 1 to 3 are satisfied but the condition 4 described above is not satisfied, in particular, when the integrated value for the linear expansion curve of the resin mask over the range from 25° C. to the upper limit temperature divided by the integrated value for the linear expansion curve of the metal layer over the range from 25° C. to the upper limit temperature is smaller than 0.55, the resin mask 20 slackens, or in other words, the resin mask 20 becomes creased, and such slack or creases tend to cause a variation in dimension, position or the like of the opening 25 formed in the resin mask 20. On the other hand, when the integrated value for the linear expansion curve of the resin mask over the range from 25° C. to the upper limit temperature divided by the integrated value for the linear expansion curve of the metal layer over the range from 25° C. to the upper limit temperature is greater than 1.45, an excessive tension is applied to the resin mask 20, or in other words, the resin mask 20 is pulled, and a variation in dimension, position or the like of the opening 25 formed in the resin mask 20 is likely to occur. Such slack or creases of the resin mask or the excessive tension on the resin mask can occur in various situations in which the vapor deposition mask is used. For example, when a vapor deposition pattern is formed with the vapor deposition mask, a variation in dimension or position of the opening 25 can occur.
A reason why the integrated values for the linear expansion curves for the resin mask and the metal layer are calculated over the range from 25° C. to the upper limit temperature (the glass transition temperature (Tg) of the resin material plus 100° C.) is that, even though the integrated value for the linear expansion curve of the resin mask over the range from 25° C. to the glass transition temperature (Tg) of the resin material divided by the integrated value for the linear expansion curve of the metal layer 10 over the range from 25° C. to the glass transition temperature (Tg) of the resin material falls within the range from 0.55 to 1.45 inclusive, if the integrated value for the linear expansion curve of the resin mask over the range from 25° C. to the upper limit temperature divided by the integrated value for the linear expansion curve of the metal layer 10 over the range from 25° C. to the upper limit temperature does not fall within the range from 0.55 to 1.45 inclusive, occurrence of a variation in dimension, position or the like of the opening 25 formed in the resin mask 20 or occurrence of creases of the resin mask cannot be sufficiently inhibited.
In order to further inhibit occurrence of creases or a variation in dimension of position of the opening 25, the integrated value for the linear expansion curve of the resin mask over the range from 25° C. to the upper limit temperature divided by the integrated value for the linear expansion curve of the metal layer 10 over the range from 25° C. to the upper limit temperature preferably falls within a range from 0.75 to 1.25 inclusive.
The resin material contained in the resin mask and the metal material contained in the metal layer are not particularly limited, and any material that satisfies the condition 4 described above can be appropriately chosen. Examples of the metal material include stainless steel, iron-nickel alloy, aluminum alloy. The metal layer may contain only one kind of metal material or contain two or more kinds of metal materials.
Among others, iron alloy is preferably used as the metal material contained in the metal layer, because the iron alloy is less susceptible to heat deformation. The iron alloy may be Fe—36Ni alloy (invar), Fe—32Ni—5Co alloy, or Fe—29Ni—17Co alloy, for example. When selecting the resin material to be contained in the resin mask, the resin material to be contained in the resin mask can be selected by considering the compatibility between the resin material and the iron alloy that is preferred as the metal material to be contained in the metal layer so that the condition 4 described above is satisfied.
As the metal layer, a metal plate (which may be a metal steel plate, a metal foil, a metal layer or the like) obtained by rolling and plating can also be used. Alternatively, a metal plate obtained by physical vapor deposition, such as reactive sputtering, vacuum deposition, ion plating or electron beam deposition, or chemical vapor deposition, such as thermal CVD, plasma CVD or photo CVD, can also be used. The metal layer 10 may be the metal plate obtained in any of the various processes described above as it is, or may be the metal plate processed. The metal layer may have a single-layer structure or a multi-layer structure including two or more layers stacked on one another. For example, when the metal layer 10 is formed by plating, the metal layer 10 may have a multi-layer structure including a metal layer formed by electroless plating and a metal layer formed by electroplating stacked on one another (in any order), or may have a single-layer structure formed by any one of electroless plating and electroplating.
The resin material contained in the resin mask can be determined to satisfy the condition 4 described above by considering the compatibility with the metal layer and is not limited to any particular resin material. For example, the resin material may be polyimide resin, polyamide resin, polyamide-imide resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, diallyl phthalate resin, polyurethane resin, silicone resin, acrylic resin, polyvinyl acetal resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene-vinyl acetate copolymer, ethylene-vinyl alcohol copolymer, ethylene-methacrylate copolymer, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, or ionomer resin. The resin material may be a thermoplastic resin or a cured thermosetting resin. Among others, a resin mask 20 containing a cured polyimide resin is particularly preferable because of the high accuracy of dimensions and the small variation in position of the opening 25 in the resin mask 20, provided that the conditions 1 to 4 described above are satisfied.
Next, the resin mask 20 and the metal layer 10 forming the vapor deposition mask according to the embodiment of the present disclosure will be described with regard to examples.
<Resin Mask>
As shown in
Although the thickness of the resin mask 20 is not particularly limited, the thickness of the resin mask 20 is preferably equal to or less than 25 μm, or more preferably less than 10 μm, from the viewpoint of inhibiting a shadow. Although there is no preferable range of the lower limit value of the thickness, if the thickness of the resin mask 20 is less than 3 μm, a defect, such as a pin hole, tends to occur, and the risk of deformation or the like increases. In particular, if the thickness of the resin mask 20 is equal to or greater than 3 μm and smaller than 10 μm, or more preferably, equal to or greater than 4 μm and equal to or smaller than 8 μm, the influence of a shadow can be more effectively prevented when a pattern is formed with a resolution higher than 400 ppi. The resin mask 20 and the metal layer 10 described later may be directly bonded to each other or may be bonded with an adhesive layer interposed therebetween. When the resin mask 20 and the metal layer 10 are bonded with an adhesive layer interposed therebetween, the overall thickness of the resin mask 20 and the adhesive layer preferably falls within the preferably thickness range described above. Note that the “shadow” refers to a phenomenon in which some of the vapor deposition material emitted from the vapor deposition material source collides with a cut face of the metal layer 10 or an inner wall face of the opening in the resin mask and therefore fails to reach the vapor deposition target, and therefore a non-deposited part having a deposition thickness smaller than an intended deposition thickness occurs.
The cross-sectional shape of the opening 25 is also not particularly limited. The opposite edge faces of the opening 25 in the resin mask may be substantially parallel to each other. However, as shown in
<Metal Layer>
As shown in
With the vapor deposition mask 100 shown in
With the vapor deposition mask 100 shown in
The ratio of the area of the metal layer 10 overlapping with the resin mask 20 to the area of the face of the resin mask 20 closer to the metal layer 10 (which does not include the area of the inner wall face of the opening) is not particularly limited, and can be any value as far as the metal layer 10 is provided on the resin mask 20 and the conditions 1 to 4 described above are satisfied. Note that the ratio of the metal layer 10 overlapping with the resin mask is calculated with respect to the area of the face of the metal layer 10 closer to the resin mask. Note that the “metal layer 10 overlapping with the resin mask” does not mean only the metal layer 10 that is in direct contact with the resin mask but also mean the metal layer 10 that overlaps with the resin mask 20 without a direct contact.
For example, comparing vapor deposition masks that have the same ratio of the area of the metal layer 10 overlapping with the resin mask 20 to the area of the face of the resin mask 20 closer to the metal layer 10 and differ in whether to satisfy the condition 4 described above, the vapor deposition mask that satisfies the condition 4 described above has a smaller difference in internal stress between the resin mask 20 and the metal layer 10 and is superior in inhibition of a variation in dimension or position of the opening 25 that can occur in the resin mask 20, regardless of the ratio of the area of the metal layer 10.
With the preferable vapor deposition mask 100 according to the present disclosure, the ratio of the area of the face of the metal layer 10 overlapping with the resin mask 20 to the area of the face of the resin mask 20 closer to the metal layer 10 (referred to as the ratio of the metal layer, hereinafter) is as follows.
(1) Implementation in Which the Metal Layer 10 has a Plurality of Through-Holes 15 (see
The ratio of the metal layer 10 according to this implementation preferably equal to or higher than 20% and equal to or lower than 70%, and more preferably equal to or higher than 25% and equal to or lower than 65%.
(2) Implementation in Which the Metal Layer 10 has One Through-Hole 15 (See
The ratio of the metal layer 10 according to this implementation preferably equal to or higher than 5% and equal to or lower than 40%, and more preferably equal to or higher than 10% and equal to or lower than 30%.
(3) Implementation in Which a Plurality of Metal Layers 10 is Provided on Parts of the Resin Mask 20 (See
The ratio of the metal layer 10 according to this implementation preferably equal to or higher than 0.5% and equal to or lower than 50%, and more preferably equal to or higher than 5% and equal to or lower than 40%.
By setting the ratio of the metal layer 10 to fall within the preferable range described above, the accuracy of the dimensions of the opening 25 of the resin mask 20 can be increased, and the variation in position of the opening 25 can be reduced.
In the following, arrangements of the metal layer 10 will be described with reference to vapor deposition masks according to first to third implementations. Note that the vapor deposition masks 100 according to the implementations described below satisfy the conditions 1 to 4 described above. Therefore, occurrence of a variation in dimension or position of the opening 25 in the resin mask 20 can be inhibited. A precise vapor deposition pattern can be formed with these vapor deposition masks.
(Vapor Deposition Mask According to First Implementation)
As shown in
According to the vapor deposition mask 100 of the first implementation, vapor deposition patterns for a plurality of products can be formed at the same time with one vapor deposition mask 100. The “opening” in the vapor deposition mask referred to in this specification means an opening required to form a vapor deposition pattern. In other words, the “opening” means a pattern to be fabricated with the vapor deposition mask 100. For example, if the vapor deposition mask is used to form an organic layer of an organic EL display, the shape of the opening corresponds to the shape of the organic layer. Furthermore, the “screen” refers to a set of openings 25 for one product. If the product is an organic EL display, the “screen” is a set of organic layers required for one organic EL display. That is, the “screen” refers to a set of openings 25 to form the organic layers of one organic EL display. In the vapor deposition mask 100 according to the first implementation, in order to form vapor deposition patterns including a plurality of screens at the same time, a plurality of “screens” is arranged at a predetermined distance in the resin mask 20. That is, the resin mask 20 has a plurality of screens of openings 25 formed therein.
In the vapor deposition mask 100 shown in
With the vapor deposition mask 100 according to the first implementation, even if the size of the openings 25 in a screen or the pitch of the openings 25 in a screen is reduced, for example, even if the size of the openings 25 or the pitch of the openings 25 is extremely small in order to form a screen having a resolution higher than 400 ppi, an interference from the metal layer 10 can be prevented, and a precise image can be formed. Note that if there is the metal layer 10 between the openings 25 in a screen, as the pitch of the openings 25 in one screen decreases, the metal layer between the openings 25 comes to interfere with the formation of the vapor deposition pattern on the vapor deposition target, and it becomes difficult to accurately form a vapor deposition pattern. In other words, if there is the metal layer 10 between the openings 25 in a screen, once the vapor deposition mask is provided with a frame, the metal layer 10 causes a shadow and makes it difficult to form a precise screen.
Next, with reference to
In
As described above, the through-hole 15 in the metal layer may be located to overlap with only one screen or located to overlap with the whole of two or more screens as shown in
Next, with reference to the configuration shown in
A lateral pitch (P3) and a longitudinal pitch (P4) of screens are also not particularly limited. However, when each through-hole 15 in the metal layer is located to overlap with the whole of one screen as shown in
Note that, if one through-hole 15 in the metal layer is located to overlap with the whole of two or more screens as shown in
<Vapor Deposition Mask According to Second Implementation>
Next, a vapor deposition mask according to a second implementation will be described. As shown in
In the vapor deposition mask according to the second implementation, the metal layer 10 may further have another through-hole that does not overlap with any openings required to form a vapor deposition pattern. In the vapor deposition mask according to the second implementation, the resin mask 20 may have an opening that is not required to form a vapor deposition pattern at a location where the opening does not overlap with the through-hole 15 in the metal layer that overlaps with all the openings required to form a vapor deposition pattern.
In the vapor deposition mask 100 according to the second implementation, the metal layer 10 having one through-hole 15 is provided on the resin mask 20 having a plurality of openings 25, and all the openings 25 required to form a vapor deposition pattern are arranged at locations where the openings 25 overlap with the one through-hole 15 in the metal layer. In the vapor deposition mask 100 according to the second implementation configured in this way, the metal layer 10 does not exist between the openings 25, and therefore, the interference from the metal layer 10 described above with regard to the vapor deposition mask according to the first implementation does not occur, and a vapor deposition pattern can be accurately formed according to the dimensions of the openings 25 formed in the resin mask 20.
With the vapor deposition mask according to the second implementation, even if the thickness of the metal layer 10 is increased, there is little influence of shadows. Therefore, the thickness of the metal layer 10 can be increased until adequate durability and ease of handling are achieved. That is, the durability and the ease of handling can be improved while allowing formation of a precise vapor deposition pattern.
The resin mask 20 of the vapor deposition mask according to the second implementation is made of a resin and has a plurality of openings 25 required to form a vapor deposition pattern formed at locations where the openings 25 overlap with the one through-hole 15 in the metal layer as shown in
The “screen” in the vapor deposition mask 100 according to the second implementation refers to a set of openings 25 for one product. If the product is an organic EL display, the “screen” is a set of organic layers required for one organic EL display. That is, the “screen” is a set of openings 25 to form the organic layers of one organic EL display. The vapor deposition mask according to the second implementation may include only one screen or include a plurality of screens. When the vapor deposition mask includes a plurality of screens, the openings 25 in different screens are preferably arranged at a predetermined distance (see
The metal layer 10 of the vapor deposition mask 100 according to the second implementation has one through-hole 15. In the vapor deposition mask 100 according to the second implementation, in the front view of the metal layer 10, the one through-hole 15 overlaps with all the openings 25 required to form a vapor deposition pattern. In other words, the one through-hole 15 in the metal layer is arranged at a location where the through-hole 15 allows a view of all the openings 25 in the resin mask 20 that are required to form a vapor deposition pattern.
The metal part of the metal layer 10, that is, the part of the metal layer 10 other than the one through-hole 15, may be provided along the outer edge of the vapor deposition mask 100 as shown in
A lateral width (W1) and a longitudinal width (W2) of the metal part forming the wall of the one through-hole 15 in the metal layer 10 shown in
<Vapor Deposition Mask According to Third Implementation>
In a vapor deposition mask according to a third implementation, as shown in
In the vapor deposition mask according to the third implementation, the location where the metal layer 10 is provided and the two-dimensional shape of the metal layer in planar view are not particularly limited. That is, the two-dimensional shape of the metal layer 10 can be appropriately designed according to the location where the metal layer is provided.
For example, as shown in
In the configuration shown in
Alternatively, as shown in
For example, as shown in
By arranging band-shaped metal layers 10 in parallel to the long sides or short sides of the resin mask 20 as described above, a deformation, such as a stretch or a shrinkage, of the resin mask 20 in the length direction of the band-shaped metal layers 10 can be effectively inhibited, and occurrence of creases can be inhibited when the vapor deposition mask 100 is fixed to the frame. Therefore, when the resin mask 20 has long sides and short sides, the metal layer 10 is preferably arranged in parallel to the long sides, which more significantly varies in length because of stretch or shrinkage.
The metal layer 10 does not necessarily have to be located on the circumferential part of the resin mask 20.
If the metal layers 10 are also arranged in the non-circumferential part of the resin mask 20 or, more specifically, in locations where the metal layers 10 do not overlap with the part of the resin mask 20 that does not overlap with the frame, the metal layers 10 are not only used for fixing to the frame but can also effectively inhibit a possible deformation, such as a stretch or a shrinkage, of the resin mask 20. In addition, if the metal layers 10 have the shape of a band, when the vapor deposition mask is fixed to the frame, a stress that can occur in the resin mask 20 can be appropriately relieved compared with the case where the metal layer surrounds the openings 25 formed in the resin mask 20, and as a result, a deformation, such as a stretch or a shrinkage, can be effectively inhibited.
The dotted lines shown in
As shown in
As shown in
The thickness of the metal layer 10 is not particularly limited. However, in order to more effectively prevent occurrence of a shadow, the thickness is preferably equal to or smaller than 100 μm, more preferably equal to or smaller than 50 μm, or most preferably equal to or smaller than 35 μm. If the metal layer 10 has such a thickness, the risk of breakage or deformation can be reduced, and the ease of handling can be improved.
In the configuration shown in
The cross-sectional shape of the metal layer 10 is also not particularly limited. However, as shown in
The method of providing the metal layer 10 on the resin mask is not particularly limited, and the resin mask 20 and the metal layer 10 may be bonded to each other with various kinds of adhesives, or a resin mask having adhesion may be used. The metal layer 10 can be formed in various methods described later with regard to a method of manufacturing a vapor deposition mask according to an embodiment of the present disclosure, such as etching or plating. Alternatively, a laminated body including a resin plate (including a resin layer) to form the resin mask and a metal plate to form the metal layer may be prepared, and the laminated body may be processed to form the resin mask 20 and the metal layer 10. The resin mask 20 and the metal layer 10 may have the same size or different sizes. Note that, considering that the vapor deposition mask may optionally be fixed to a frame, it is preferable that the resin mask 20 is smaller than the metal layer 10 so that the outer peripheral part of the metal layer 10 is exposed, since the metal layer 10 can be easily fixed to the frame.
A groove (not shown) extending in the longitudinal direction or lateral direction of the resin mask 20 may be formed in the resin mask 20. When heat is applied during vapor deposition, the resin mask 20 can thermally expand and cause a variation in dimension or position of the opening 25. However, if the groove is formed, the groove can accommodate the expansion of the resin mask and prevent the resin mask 20 from expanding in a predetermined direction as a whole because of accumulation of local thermal expansions of the resin mask and causing a variation in dimension or position of the opening 25. The location where the groove is formed is not limited, and the groove can be provided at any location, such as between openings 25 forming one screen, a location where the groove overlaps with the through-hole 15 in the metal layer, or a location where the groove does not overlap with the through-hole 15 in the metal layer. However, the groove is preferably provided between screens. The groove may be provided only on the face of the resin mask on the side of the metal layer 10 or only on the face of the resin mask 20 opposite to the metal layer. The groove may be provided on both faces of the resin mask 20.
A groove extending in the longitudinal direction between adjacent screens or a groove extending in the lateral direction between adjacent screens may be formed. Furthermore, a combination of such grooves may be formed.
The depth and width of the groove are not particularly limited and can be appropriately determined by considering the rigidity of the resin mask 20. The cross-sectional shape of the groove is also not particularly limited, and any shape, such as a U-shape or a V-shape, can be chosen by considering the processing method.
(Frame-Equipped Vapor Deposition Mask)
A frame-equipped vapor deposition mask 200 according to an embodiment of the present disclosure includes the vapor deposition mask 100 according to any of the implementations of the present disclosure described above that is fixed to a frame 60. Descriptions of the vapor deposition mask 100 will be omitted.
The frame-equipped vapor deposition mask 200 may include one vapor deposition mask 100 fixed to the frame 60 as shown in
For example, as shown in
Alternatively, as shown in
The frame 60 is a frame member having a substantially rectangular shape and has a through-hole that allows the openings 25 formed in the resin mask 20 of the vapor deposition mask 100 that is to be finally fixed to the frame 60 to be exposed on the side of the vapor deposition material source. The material of the frame may be a metal material, a glass material or a ceramic material, for example.
The thickness of the frame is also not particularly limited. However, from the viewpoint of rigidity or the like, the thickness of the frame preferably falls within a range from 10 mm to 100 mm inclusive, or more preferably falls within a range from 10 mm to 30 mm inclusive. The width between the inner peripheral edge face of the frame and the outer peripheral edge face of the frame is not particularly limited as far as the width allows fixing of the metal layer of the vapor deposition mask to the frame. For example, the width falls within a range from 10 mm to 300 mm inclusive or a range from 10 mm to 70 mm inclusive.
As shown in
The method of fixing the vapor deposition masks 100 to the frame 60 is also not particularly limited. The vapor deposition masks 100 can be fixed to the frame 60 by spot welding using laser light or the like, with an adhesive or a screw, or in any other method.
<<Vapor Deposition Mask Preparation Body>>
As shown in
With the vapor deposition mask preparation body 150 according to the embodiment of the present disclosure, when the opening 25 is formed in the resin plate 20A, slack, creases or the like on the resin plate 20A and an excessive tension on the resin plate 20A can be inhibited, and the opening 25 that is precise in dimension and position and can be inhibited from varying in dimension or position can be formed. That is, with the vapor deposition mask preparation body 150 according to the embodiment of the present disclosure, a vapor deposition mask that has a precise opening 25 that can be inhibited from varying in dimension or position can be obtained.
The vapor deposition mask preparation body 150 according to the embodiment of the present disclosure is the same as the vapor deposition mask according to another embodiment of the present disclosure described above except that the resin mask 20 having the opening 25 is replaced by the resin plate 20A.
The resin plate 20A may be a resin layer obtained by various coating processes or a sheet-like resin plate. The resin plate 20A constitutes the resin mask 20 in the end, so that the thickness of the resin plate 20A can be determined based on the thickness of the resin mask 20 finally formed.
<<Method of Manufacturing Vapor Deposition Mask>>
A method of manufacturing a vapor deposition mask according to an embodiment of the present disclosure is a method of manufacturing a vapor deposition mask including a resin mask 20 having an opening 25 required to form a vapor deposition pattern and a metal layer 10 provided on the resin mask 20, and includes a step of providing a resin plate 20A containing a resin material on a metal plate 10A containing a metal material (see
A method of manufacturing a vapor deposition mask according to another embodiment of the present disclosure is a method of manufacturing a vapor deposition mask including a resin mask 20 having an opening 25 required to form a vapor deposition pattern and a metal layer 10 provided on the resin mask 20, and includes a step of providing the metal layer 10 on a resin plate 20A containing a resin material and a step of forming the opening 25 required to form a vapor deposition pattern in the resin plate 20A. As for the resin plate containing a resin material and the metal layer containing a metal material used in the method of manufacturing a vapor deposition mask according to the embodiment of the present disclosure, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, provided that the glass transition temperature (Tg) of the resin material plus 100° C. is an upper limit temperature, the integrated value of the linear expansion curve for the resin plate over a range from a temperature of 25° C. to the upper limit temperature divided by the integrated value of the linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature is defined to fall within a range from 0.55 to 1.45 inclusive.
With the methods of manufacturing a vapor deposition mask according to the embodiments of the present disclosure, when the opening 25 is formed in the resin plate 20A, slack, creases or the like on the resin plate 20A and an excessive tension on the resin plate 20A can be inhibited, and the opening 25 that is precise in dimension and position and can be inhibited from varying in dimension or position can be formed. That is, with the methods of manufacturing a vapor deposition mask according to the embodiments of the present disclosure, a vapor deposition mask that has a precise opening 25 that can be inhibited from varying in dimension or position can be obtained.
(Step of Providing Resin Plate on Metal Plate)
This step is a step of providing the resin plate 20A on the metal plate 10A containing a metal material as shown in
As for the resin plate 20A containing a resin material and the metal plate 10A containing a metal material used in the method of manufacturing a vapor deposition mask according to the embodiment of the present disclosure, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, provided that the glass transition temperature (Tg) of the resin material plus 100° C. is an upper limit temperature, the integrated value of the linear expansion curve for the resin mask over a range from a temperature of 25° C. to the upper limit temperature divided by the integrated value of the linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature is defined to fall within a range from 0.55 to 1.45 inclusive.
The resin plate 20A may be previously molded or may be formed by applying a coating liquid containing the resin material to the metal plate 10A and drying the coating liquid. Alternatively, the resin plate 20A (which may be a resin film or a resin sheet) may be bonded to the metal plate 10A with an adhesive layer or the like interposed therebetween. The coating liquid used to form the resin plate 20A contains the resin material and a medium in which the resin material is dissolved. The method of applying the coating liquid is not particularly limited and can be a well-known process, such as gravure printing, screen printing, or reverse roll coating using a gravure plate. The amount of the coating liquid applied can be appropriately determined based on the thickness of the resin mask 20 finally obtained.
The metal plate 10A may be bonded to the resin plate 20A with a cohesive layer or adhesive layer interposed therebetween.
The resin material is not particularly limited, and any resin material described above as being contained in the resin mask 20 with regard to the vapor deposition mask according to the embodiment of the present disclosure can be appropriately selected and used. For example, the resin plate 20A may include a cured thermosetting resin. The resin plate 20A including a cured thermosetting resin can be obtained by applying a coating liquid containing the thermosetting resin to the metal plate 10A and heating the coating liquid at a temperature higher than the setting temperature of the thermosetting resin. The temperature at which the thermosetting resin is cured can be appropriately determined for the particular thermosetting resin contained in the resin plate 20A. Note that when the resin plate 20A contains a plurality of thermosetting resins, the coating liquid is preferably heated at a temperature higher than the highest setting temperature of the setting temperatures of the plurality of thermosetting resins.
(Step of Providing Metal Layer)
This step is a step of processing the metal plate 10A with the resin plate 20A formed on the surface thereof to form the metal layer 10 as shown in
As an alternative to the formation of the metal layers 10 using the metal plate 10A, the metal layer 10 can also be formed by plating. An example method of forming the metal layer 10 on the resin plate 20A by plating is a method of forming the metal layer 10 on the resin plate 20A by various kinds of plating. Another example formation method is a method of forming the metal layer 10 on the resin plate 20A by forming the metal layer 10 by various kinds of plating on a support body, such as a glass substrate, bonding the formed metal layer 10 and the resin plate 20A to each other, and then peeling the metal layer 10 off the support body. Alternatively, a metal plate may be formed by various kinds of plating, and the metal plate may be processed to form the metal layer 10.
In the step of providing the metal layer described above, instead of the process of processing the metal plate 10A to form the metal layer 10, a previously prepared metal layer 10 may be provided on the resin plate 20A. For example, a previously prepared metal layer 10 may be bonded to the resin plate 20A with an adhesive or the like.
(Step of Forming Opening)
This step is a step of forming the opening 25 in the resin plate 20A containing a resin material as shown in
The metal layer 10 may be provided on the resin plate 20A after the step of forming the opening 25.
The method of forming the opening 25 is not particularly limited, and a conventionally well-known process, such as laser processing, etching, or machine processing, can be used. Note that the laser processing is preferable because the opening 25 can be more accurately formed in the resin plate 20A.
Although an example has been primarily described in which the metal layer 10 is first formed on the resin plate 20A, and the opening 25 is then formed in the resin plate 20A, the opening 25 may be first formed in the resin plate 20A, and the metal layer 10 may be then formed on the resin plate 20A (resin mask 20) having the opening 25 formed therein. For example, if the plating process described above is used, the metal layer 10 can be selectively formed on the resin mask 20 having the opening 25 formed therein without processing the metal plate 10A. Note that, considering the accuracy of the dimensions and position of the opening formed in the resin mask 20 at the time when the vapor deposition mask is fixed to the frame, the opening 25 is preferably formed after the resin plate 20A is fixed to the frame. In this case, the metal layer 10 may be formed on the resin plate 20A fixed to the frame, or the metal layer 10 may be first formed on the resin plate 20A, and the resin plate 20A with the metal layer 10 formed thereon may be then fixed to the frame. Alternatively, a stack of the resin plate 20A and the metal plate 10A may be fixed to the frame, or the metal plate 10A may be provided on the resin plate 20A fixed to the frame, and after that, the opening 25 may be formed in the resin plate 20A, and the metal layer 10 may be processed to form the metal plate 10A.
The vapor deposition mask manufactured in the method of manufacturing a vapor deposition mask according to the embodiment of the present disclosure may be the vapor deposition mask according to each implementation of the present disclosure described above.
(Vapor Deposition Method Using Vapor Deposition Mask)
The vapor deposition method used for forming a vapor deposition pattern using the vapor deposition mask according to each implementation of the present disclosure or the frame-equipped vapor deposition mask according to each implementation of the present disclosure is not particularly limited, and may be physical vapor deposition, such as reactive sputtering, vacuum deposition, ion plating, or electron beam deposition, or chemical vapor deposition, such as thermal CVD, plasma CVD, or photo CVD, for example. The vapor deposition pattern can be formed with a conventionally well-known vacuum deposition apparatus, for example.
<<Method of Manufacturing Organic Semiconductor Element>>
Next, a method of manufacturing an organic semiconductor element according to an embodiment of the present disclosure will be described. The method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure includes a vapor deposition pattern formation step of forming a vapor deposition pattern on a vapor deposition target using a vapor deposition mask, and in the vapor deposition pattern formation step, the vapor deposition mask according to any of the implementations of the present disclosure described above or the frame-equipped vapor deposition mask according to any of the implementations of the present disclosure is used.
The vapor deposition pattern formation step of forming a vapor deposition pattern in a vapor deposition process using a vapor deposition mask is not particularly limited. The vapor deposition pattern formation step includes an electrode formation step of forming an electrode on a substrate, an organic layer formation step, an opposed-electrodes formation step, a sealing layer formation step and the like. In any of these steps, the vapor deposition pattern is formed in the vapor deposition pattern formation method according to the embodiment of the present disclosure described above. For example, when the vapor deposition pattern formation method according to the embodiment of the present disclosure described above is applied to a luminescent layer formation step for red (R), green (G), and blue (B) of an organic EL device, a vapor deposition pattern for a luminescent layer of each color is formed on the substrate. The method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure is not limited to these steps but can be applied to any step in a conventionally well-known manufacturing process for an organic semiconductor element.
With the method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure described above, vapor deposition for forming the organic semiconductor element can be performed in a state where the vapor deposition mask and the vapor deposition target are in intimate contact with each other without a clearance, and the organic semiconductor element can be accurately manufactured. The organic semiconductor element manufactured in the method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure may be an organic layer, a luminescent layer, or a cathode electrode of an organic EL element, for example. In particular, the method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure can be appropriately used to manufacture a red (R) luminescent layer, a green (G) luminescent layer, and a blue (B) luminescent layer of an organic EL device, which is required to have a precise pattern.
<<Method of Manufacturing Organic EL Display>>
Next, a method of manufacturing an organic electroluminescent display (organic EL display) according to an embodiment of the present disclosure will be described. The method of manufacturing an organic EL display according to the embodiment of the present disclosure uses the organic semiconductor element manufactured in the method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure described above in the process of manufacturing the organic EL display.
The organic EL display incorporating the organic semiconductor element manufactured in the method of manufacturing an organic semiconductor element according to the embodiment of the present disclosure may be an organic EL display used in a notebook personal computer (see
Nine vapor deposition mask preparation body samples A to I in which a resin plate is provided on a metal plate were prepared. For the vapor deposition mask preparation body samples A to I, the CTE curves for the metal plate and the resin plate forming the vapor deposition mask preparation body are created in the method (method of creating a linear expansion curve) described above, and the ratio is calculated by dividing the calculated integrated value for the resin mask by the calculated integrated value for the metal layer. Table 1 shows the result of the calculation of the ratio. In the table, [Resin Plate/Metal Plate] means the integrated value of the linear expansion curve for the resin plate over a range from a temperature of 25° C. to the upper limit temperature divided by the integrated value of the linear expansion curve for the metal plate over the range from the temperature of 25° C. to the upper limit temperature in the resin plate and the metal plate forming each vapor deposition mask preparation body sample.
Each vapor deposition mask preparation body sample was fabricated in the manner described below.
(Fabrication of Vapor Deposition Mask Preparation Body Sample)
A metal plate having a thickness of 20 μm was prepared, and a polyimide resin precursor (UPIA (registered trademark) ST, UBE INDUSTRIES, LTD.) was applied to one face of the metal plate with a comma coater and then dried at 130° C. for 120 seconds and then at 160° C. for 160 seconds. After the polyimide resin precursor is dried, the polyimide resin precursor was fired under the baking conditions (baking temperature and baking time) shown in Table 1 below. In this way, vapor deposition mask preparation body samples (vapor deposition mask preparation body samples A to I) in which a resin plate having a thickness of 5 μm was formed on a metal plate were prepared. The baking was performed in a nitrogen atmosphere. The metal plate used was made of Fe—36Ni alloy (invar). The resin plate (the resin plate fired under the baking conditions shown in Table 1 below) in each vapor deposition mask preparation body sample is the cured polyimide resin.
Each vapor deposition mask preparation body sample fabricated as described above was cut into a size of 100 mm (in the width direction) by 150 mm (in the length direction). The metal plate in each cut vapor deposition mask preparation body sample was etched from the side of the metal plate in the method described in Example 1 in Japanese Patent No. 3440333, and one through-hole having a size of 70 mm (in the width direction) by 120 mm (in the length direction) was formed in a central part of the metal plate in such a manner that the through-hole penetrates through only the metal plate. For each vapor deposition mask preparation body sample in which the through-hole was formed, (1) the degree of creases occurring in the resin plate was evaluated according to the evaluation method described below. Then, an opening was formed in the resin plate in each vapor deposition mask preparation body sample in which the through-hole was formed in the method described below, and (2) the variation in position of the opening was measured.
(1) Evaluation of Creases in Resin Plate
For each vapor deposition mask preparation body sample in which the through-hole was formed, the part of the resin plate visible through the through-hole was visually checked, and creases in the resin plate were evaluated according to the evaluation criterion described below. The result of the evaluation is shown in Table 1.
[Evaluation Criterion]
A: no creases that can be observed have occurred in the resin plate.
B: little creases that can be observed have occurred in the resin plate.
C: creases that can cause trouble in use have occurred in the resin plate.
(2) Measurement of Variation in Position of Opening
For each vapor deposition mask preparation body sample evaluated for creases as described above, the surface of the resin plate on the side of the metal plate was irradiated multiple times with a YAG laser (1 J/cm2) having a wavelength of 355 nm and a rectangular pattern of a size of 30 μm by 500 μm through the through-hole formed in the metal plate, thereby forming openings in two rows by two columns in the resin plate. The gap between the long sides was 5 μm, and the gap between the short sides was 50 μm. Then, the state of the openings was observed with a microscope. One bridge part (one 50-μm gap between short sides) was cut by laser. Then, the variation in position of the openings was observed on a microscope video monitor, measured and evaluated according to the evaluation criterion described below. The result of the evaluation is shown in Table 1.
[Evaluation Criterion]
A: the variation in position of opening is equal to or smaller than 2 μm.
B: the variation in position of opening is greater than 2 μm and smaller than 4 μm.
C: the variation in position of opening is equal to or greater than 4 μm.
Number | Date | Country | Kind |
---|---|---|---|
2018-080690 | Apr 2018 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP2019/011768 | 3/20/2019 | WO | 00 |