Claims
- 1. A method for manufacturing a vertical double diffused MOSFET, comprising the steps of:(a) forming an oxide film on a substrate; (b) forming a gate electrode having at least one window on said oxide film; (c) forming a nitride film as an insulation layer on said oxide film and said gate electrode; (d) forming an ion implant window through said nitride film at a center of said window; (e) implanting ions of a first conductivity type through said ion implant window to said substrate; (f) thermally diffusing said ions to form a main diffusion region and growing said oxide film inside said ion implant window to form a thick walled portion; (g) implanting ions of the first conductivity type through a mask of said thick walled portion, said gate electrode and said nitride film on said gate electrode into said substrate and thermally diffusing to form a channel diffusion region; and (h) implanting ions of a second conductivity type through a mask of said thick walled portion, said gate electrode and said nitride film on said gate electrode to said substrate and thermally diffused into form a source diffusion region.
- 2. A manufacturing method according to claim 1, wherein said step (f) is substantially one heating step.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-135282 |
May 1998 |
JP |
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CROSS REFERENCE TO RELATED APPLICATION
This application is a divisional application of U.S. application Ser. No. 09/313,137, filed on May 17, 1999 now U.S. Pat. No. 6,229,178.
US Referenced Citations (7)
Foreign Referenced Citations (1)
Number |
Date |
Country |
62-162361 |
Jul 1987 |
JP |