Vertical DMOS transistors

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H01L29/7802

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7802Vertical DMOS transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 12,266,531
- Issue date Apr 1, 2025
- Mitsubishi Electric Corporation
- Junya Miwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide vertical conduction MOSFET device for power applica...
- Patent number 12,255,233
- Issue date Mar 18, 2025
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection structures for semiconductor devices with sensor arrange...
- Patent number 12,237,412
- Issue date Feb 25, 2025
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction MOSFET device
- Patent number 12,230,672
- Issue date Feb 18, 2025
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Tian Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having increased forward biased safe operating area using so...
- Patent number 12,230,686
- Issue date Feb 18, 2025
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar SiC MOSFET with retrograde implanted channel
- Patent number 12,230,675
- Issue date Feb 18, 2025
- HITACHI ENERGY LTD
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,224,313
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Yuhki Fujino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 12,218,215
- Issue date Feb 4, 2025
- TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Shunsuke Asaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,178
- Issue date Jan 14, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device having a titled body contact area a...
- Patent number 12,166,080
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Power transistor cell and power transistor having field shielding c...
- Patent number 12,159,900
- Issue date Dec 3, 2024
- Robert Bosch GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor package
- Patent number 12,154,900
- Issue date Nov 26, 2024
- Rohm Co., Ltd.
- Kentaro Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 12,132,084
- Issue date Oct 29, 2024
- Fuji Electric Co., Ltd.
- Yohei Kagoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with undulating channel
- Patent number 12,125,884
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kevin Kyuheon Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having vertically parallel p-n layers fo...
- Patent number 12,119,376
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhanced SiC power semiconductor device and method of manufa...
- Patent number 12,113,131
- Issue date Oct 8, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,127
- Issue date Oct 1, 2024
- Kabushiki Kaisha Toshiba
- Hiroshi Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with improved ruggedness
- Patent number 12,087,854
- Issue date Sep 10, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,074,201
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved temperature uniformity
- Patent number 12,074,198
- Issue date Aug 27, 2024
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gradient doping epitaxy in superjunction to improve breakdown voltage
- Patent number 12,074,196
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, in...
- Patent number 12,062,691
- Issue date Aug 13, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Transistor semiconductor die with increased active area
- Patent number 12,057,389
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal film on surface between passivation...
- Patent number 12,057,416
- Issue date Aug 6, 2024
- Sumitomo Electric Industries, Ltd.
- Mitsuhiko Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module and fabrication method of the same, graphite plate, an...
- Patent number 12,046,532
- Issue date Jul 23, 2024
- Rohm Co., Ltd.
- Maiko Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor device, and manufacturing me...
- Patent number 12,040,363
- Issue date Jul 16, 2024
- Rohm Co., Ltd.
- Takuji Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device and method for forming a superjunct...
- Patent number 12,034,040
- Issue date Jul 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching object and etching device
- Patent number 12,033,869
- Issue date Jul 9, 2024
- FLOSFIA INC.
- Isao Takahashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Vertical Semiconductor Devices with Deep Well Region for Radiation...
- Publication number 20250070044
- Publication date Feb 27, 2025
- SCDevice LLC
- David Lee Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...
- Publication number 20250043460
- Publication date Feb 6, 2025
- STMicroelectronics International N.V.
- Cateno Marco CAMALLERI
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...
- Publication number 20250040197
- Publication date Jan 30, 2025
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR MODULE, POWER CONVE...
- Publication number 20250022949
- Publication date Jan 16, 2025
- LX Semicon Co., Ltd.
- Seungwook SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE INCLUDING A TRANSFER FOIL WITH POROUS SILICON C...
- Publication number 20250022707
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Matteo Piccin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250015126
- Publication date Jan 9, 2025
- Infineon Technologies Austria AG
- Tobias Nardmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20250006785
- Publication date Jan 2, 2025
- Hitachi Energy Ltd
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING FORWARD BIASED SAFE OPERATING AREA USING DIFFERENT THRES...
- Publication number 20240429298
- Publication date Dec 26, 2024
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE POWER SEMICONDUCTOR DEVICE
- Publication number 20240405119
- Publication date Dec 5, 2024
- DB HiTek Co., Ltd.
- Seung Hyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED DRAIN
- Publication number 20240395868
- Publication date Nov 28, 2024
- NEXPERIA B.V.
- Shih-Hsuan Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES
- Publication number 20240395924
- Publication date Nov 28, 2024
- STMicroelectronics International N.V.
- Salvatore CASCINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20240387721
- Publication date Nov 21, 2024
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS
- Publication number 20240387620
- Publication date Nov 21, 2024
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379844
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Chia-Lung HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240379843
- Publication date Nov 14, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP SEMICONDUCTOR DEVICE WITH SENSOR ELEMENT
- Publication number 20240379667
- Publication date Nov 14, 2024
- Wolfspeed, Inc.
- Joohyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVITY-CONTROLLED POWER SEMICONDUCTOR DEVICE
- Publication number 20240379779
- Publication date Nov 14, 2024
- Board of Regents, The University of Texas System
- Qin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...
- Publication number 20240371928
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240339499
- Publication date Oct 10, 2024
- Sumitomo Electric Industries, Ltd.
- Kosuke UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339507
- Publication date Oct 10, 2024
- Infineon Technologies Austria AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MODULE AND FABRICATION METHOD OF THE SAME, GRAPHITE PLATE, AN...
- Publication number 20240332122
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Maiko HATANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING OBJECT AND ETCHING DEVICE
- Publication number 20240321592
- Publication date Sep 26, 2024
- FLOSFIA INC.
- Isao TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20240321953
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240321967
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Shunsuke ASABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...
- Publication number 20240321970
- Publication date Sep 26, 2024
- ROHM CO., LTD.
- Takuji MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20240313083
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240313089
- Publication date Sep 19, 2024
- Fuji Electric Co., Ltd.
- Ryo TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET DEVICE AND METHOD OF MANUFACTURING VERTICAL MOSFET...
- Publication number 20240313103
- Publication date Sep 19, 2024
- Beijing Superstring Academy of Memory Technology
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240313104
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Masaru Furukawa
- H01 - BASIC ELECTRIC ELEMENTS

Vertical DMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing silicon carbide semiconductor device

Silicon carbide vertical conduction MOSFET device for power applica...

Protection structures for semiconductor devices with sensor arrange...

Super junction MOSFET device

Device having increased forward biased safe operating area using so...

Planar SiC MOSFET with retrograde implanted channel

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device

Semiconductor transistor device having a titled body contact area a...

Method for producing wafers with modification lines of defined orie...

Power transistor cell and power transistor having field shielding c...

Semiconductor device and semiconductor package

Super junction power device and method of making the same

Silicon carbide semiconductor device and method of manufacturing si...

MOSFET device with undulating channel

Power semiconductor device having vertically parallel p-n layers fo...

Strain enhanced SiC power semiconductor device and method of manufa...

Semiconductor device

Vertical semiconductor device with improved ruggedness

Semiconductor substrate, semiconductor device, and manufacturing me...

Semiconductor device with improved temperature uniformity

Gradient doping epitaxy in superjunction to improve breakdown voltage

Semiconductor device, semiconductor device manufacturing method, in...

Transistor semiconductor die with increased active area

Semiconductor device with metal film on surface between passivation...

Power module and fabrication method of the same, graphite plate, an...

Semiconductor substrate, semiconductor device, and manufacturing me...

Superjunction transistor device and method for forming a superjunct...

Method of etching object and etching device

Patents Applicationslast 30 patents

Vertical Semiconductor Devices with Deep Well Region for Radiation...

MANUFACTURING PROCESS FOR SILICON CARBIDE POWER DEVICES WITH VARIAB...

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) AND MET...

POWER SEMICONDUCTOR DEVICE, POWER SEMICONDUCTOR MODULE, POWER CONVE...

COMPOSITE SUBSTRATE INCLUDING A TRANSFER FOIL WITH POROUS SILICON C...

Power Semiconductor Device and Method of Producing a Power Semicond...

POWER SEMICONDUCTOR DEVICE

INCREASING FORWARD BIASED SAFE OPERATING AREA USING DIFFERENT THRES...

Semiconductor Device with Compensation Structure

SILICON CARBIDE POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH ENHANCED DRAIN

POWER ELECTRONIC DEVICE WITH IMPROVED ELECTRICAL PERFORMANCES

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

WIDE BANDGAP SEMICONDUCTOR DEVICE WITH SENSOR ELEMENT

CONDUCTIVITY-CONTROLLED POWER SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

POWER MODULE AND FABRICATION METHOD OF THE SAME, GRAPHITE PLATE, AN...

METHOD OF ETCHING OBJECT AND ETCHING DEVICE

SUPERJUNCTION TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING ME...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

VERTICAL MOSFET DEVICE AND METHOD OF MANUFACTURING VERTICAL MOSFET...

SEMICONDUCTOR DEVICE