Number | Name | Date | Kind |
---|---|---|---|
4670768 | Sunami et al. | Jun 1987 | |
4673962 | Chatterjee et al. | Jun 1987 | |
4910564 | Inoue | Mar 1990 | |
4914051 | Huie et al. | Apr 1990 | |
4951102 | Beitman et al. | Aug 1990 | |
4970173 | Robb | Nov 1990 | |
4983535 | Blanchard | Jan 1991 | |
5010386 | Groover, III | Apr 1991 | |
5072276 | Malhi et al. | Dec 1991 | |
5140388 | Bartelink | Aug 1992 |
Number | Date | Country |
---|---|---|
0091548 | Feb 1983 | EPX |
56-83965 | Jul 1981 | JPX |
61-144875 | Jul 1986 | JPX |
61-292371 | Dec 1986 | JPX |
0155660 | Jun 1988 | JPX |
216741 | Jul 1988 | JPX |
63-213969 | Sep 1988 | JPX |
282628 | Sep 1988 | JPX |
1-9662 | Jan 1989 | JPX |
Entry |
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"Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition"; B. S. Meyerson; Appl. Phys. Lett. 48(12), Mar. 24, 1986; IBM T. J. Watson Research Center. |