Claims
- 1. A memory device comprising:
- an array of memory cells, said memory cells arranged in rows and columns;
- address input means, for receiving row address signals and column address signals;
- row decode means, for selecting a row in said array responsive to a row address signal received by said address input means;
- column decode means, for selecting a column in said selected row responsive to a column address signal received by said address input means;
- random input means, for writing data to said memory cell selected by said column decode means;
- random output means, for presenting the contents of said memory cell selected by said column decode means;
- a register comprised of a plurality of memory cells;
- means for transferring the contents of the memory cells in said selected row of said array into the memory cells of said register;
- serial output means, connected to a selected memory cell in said register, for presenting the contents of said selected memory cell in said register;
- transfer control means, responsive to a transfer control signal, for selectively enabling and disabling said transferring means so that, when said transferring means is disabled, data may be written to and read from any of said memory cells in said array independently from the presentation of data by said serial output means;
- serial selecting means for selecting a memory cell in said register to be connected to said serial output means, responsive to said address input means receiving a column address signal after said transferring means is enabled; and
- means, responsive to a serial clock signal, for shifting to the serial output means the contents of another memory cell in said register so that, upon a series of said serial clock signals, the contents of a series of memory cells in said register will be presented by said serial output means;
- wherein said serial selecting means comprises:
- a plurality of taps, each of said taps connected to a preselected memory cell in said register;
- an output circuit, connected to said serial output means; and
- decode means, responsive to said address input means receiving a column address signal after said transferring means is enabled, for connecting said output circuit to the tap corresponding to said column address signal.
- 2. The memory device of claim 1, wherein said column address signal comprises a plurality of digital signals;
- and wherein said tap corresponds to fewer than all of said plurality of digital signals comprising said column address signal.
- 3. The memory device of claim 1, wherein said memory cells in said register are serially connected with respect to one another;
- and wherein said register is connected to said shifting means so that, responsive to said serial clock signal, the contents of each memory cell in said register is shifted to the next memory cell in said register serially connected thereto.
- 4. The memory device of claim 3, further comprising:
- serial input means, connected to a memory cell in said register, for writing data into said memory cell connected thereto;
- and wherein said transferring means also is for transferring the contents of said memory cells in said register to a like number of memory cells in said array.
- 5. The memory device of claim 4, wherein said serial input means writes data into said memory cell connected thereto concurrently with the presentation of data by said serial output means.
- 6. The memory device of claim 4, further comprising:
- means for sensing the contents of the memory cells in said selected row;
- wherein said transferring means, responsive to said transfer control means, transfers the sensed contents of said memory cells in said selected row to said memory cells in said register after said sensing means has sensed the contents of the memory cells in said selected row;
- and further comprising:
- transfer direction control means, responsive to a transfer direction signal, for controlling said transferring means so that said transferring means either transfers the contents of the memory cells in said selected row to said memory cells in said register, or transfers the contents of said memory cells in said register to said memory cells in said selected row, depending upon the transfer direction signal.
Parent Case Info
This application contains subject matter disclosed in U.S. Patent application Ser. No. 567,040, now U.S. Pat. No. 4,639,890 issued Jan. 27, 1987, Ser. No. 567,111, now U.S. Pat. No. 4,663,735 issued May 5, 1987, Ser. No. 566,860, now U.S. Pat. No. 4,688,197 issued Aug. 18, 1987, Ser. No. 567,039 now U.S. Pat. No. 4,689,741 issued Aug. 25, 1987 and Ser. No. 567,038, all filed Dec. 30, 1983 and assigned to Texas Instruments, Inc.
US Referenced Citations (5)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0124827 |
Oct 1977 |
JPX |