Claims
- 1. A wafer holding plate used in a wafer grinding apparatus, comprising:
a substrate having a wafer adhering surface to which a semiconductor wafer is adhered by an adhesive, wherein the wafer adhering surface includes a groove pattern, and wherein the groove pattern includes grooves having curved edges.
- 2. The plate according to claim 1, wherein the grooves of the groove pattern each have curved bottom surfaces.
- 3. The plate according to claim 1, wherein the substrate is formed from a body made of ceramic silicide or ceramic carbide, wherein the body has a density of 2.7 g/cm3 or greater.
- 4. The plate according to claim 1, wherein the substrate is formed from a body made of sintered silicon carbide, wherein the body has a density of 2.7 g/cm3 or greater and a thermal conductivity of 30 W/mK or greater.
- 5. The plate according to claim 1, wherein the groove pattern includes grooves having a width of 50 μm to 500 μm.
- 6. The plate according to claim 5, wherein the groove pattern occupies 1% to 20% of the wafer adhering surface.
- 7. The plate according to claim 1, wherein the wafer adhering surface includes a mirror-like surface portion having a surface roughness Ra of 0.1 μm or less.
- 8. A method for manufacturing a wafer holding plate used in a wafer grinding apparatus, the method comprising the steps of:
grinding a surface of a substrate to which a semiconductor wafer is adhered by an adhesive; masking the ground surface with a predetermined pattern; and blasting the wafer adhering surface with particles to form a groove pattern.
- 9. The method according to claim 8, wherein the blasting includes sandblasting.
- 10. The method according to claim 9, wherein the substrate is formed from a dense, sintered silicon carbide body, and wherein the sandblasting uses GC type abrasive grains.
- 11. The method according to claim 10, wherein the masking includes applying a photosensitive resin to the substrate, exposing the resin to light, and developing the resin.
- 12. The method according to claim 10, wherein the masking includes adhering a patterned film having slits to the substrate.
- 13. A method for manufacturing a wafer holding plate used in a wafer grinding apparatus, the method comprising a step of blasting a wafer adhering surface of a substrate with particles to form grooves and to simultaneously round edges of the grooves, wherein a semiconductor wafer is adhered to the completed wafer adhering surface with adhesive.
- 14. The method according to claim 13, wherein the blasting includes sandblasting.
- 15. The method according to claim 14, wherein the substrate is formed from a dense, sintered silicon carbide body, and wherein the sandblasting uses GC type abrasive grains.
- 16. The method according to claim 13, wherein the blasting includes blasting abrasive grains from a nozzle against the wafer adhering surface to form a rounded bottom surface for each of the grooves at a first portion located directly below the nozzle and curved edges of each of the grooves at a second portion located adjacent to the first portion.
- 17. The method according to claim 13, further comprising the step of masking the wafer adhering surface with a predetermined pattern prior to the blasting.
- 18. The method according to claim 17, wherein the masking includes applying a photosensitive resin to the substrate, exposing the resin to light, and developing the resin.
- 19. The method according to claim 17, wherein the masking includes adhering a patterned film having slits to the substrate.
Priority Claims (2)
Number |
Date |
Country |
Kind |
11-083830 |
Mar 1999 |
JP |
|
11-083831 |
Mar 1999 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional of application Ser. No. 09/532,532, filed Mar. 21, 2000, pending.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09532532 |
Mar 2000 |
US |
Child |
10236395 |
Sep 2002 |
US |