Claims
- 1. A method of treating a wafer coated with a low-k material comprising:a. placing the wafer in a first compartment containing a first processing environment; b. isolating the wafer between the first compartment and a second compartment in a transfer cavity having a small transfer volume containing a portion of the first processing environment; c. opening the transfer cavity to the second compartment containing a second processing environment with the transfer cavity closed to the first compartment; d. monitoring a chemical composition of the second processing environment in the second compartment; and e. adjusting the chemical composition of the second processing environment in the second compartment when the chemical composition reaches a threshold value.
- 2. The method of claim 1, further comprising the step of purging the transfer volume prior to the step of opening the transfer cavity to the second compartment with the transfer cavity closed to the first compartment.
- 3. The method of claim 2, wherein the step of purging the transfer cavity comprises the additional steps of:a. drawing a vacuum on the transfer cavity; and b. backfilling the transfer cavity.
- 4. The method of claim 3, wherein small transfer volume is 10% or less than the volume of the second processing environment.
- 5. The method of claim 3, wherein small transfer volume is less than five times the volume occupied by the wafer.
- 6. The method of claim 1, wherein the chemical composition of the second processing environment in the second compartment is monitored with an infrared sensor that monitors the concentration of ammonia.
- 7. The method of claim 1, further comprising providing convection to the second processing environment after opening the transfer cavity to the second compartment containing the second processing environment.
RELATED APPLICATION(S)
This Patent Application claims priority under 35 U.S.C. 119(e) of the co-pending U.S. Provisional Patent Application, Ser. No. 60/188,605, filed Mar. 9, 2000, and entitled “AGING CHAMBER FOR LOW-K CHEMICAL”. The Provisional Patent Application, Ser. No. 60/188,605, filed Mar. 9, 2000, and entitled “AGING CHAMBER FOR LOW-K CHEMICAL” is also hereby incorporated by reference.
US Referenced Citations (13)
Non-Patent Literature Citations (1)
Entry |
Hitchman, Chemical Vapor Deposition Principles and Applications, Academic Press, N.Y. pp 110-129, 1993. |
Provisional Applications (1)
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Number |
Date |
Country |
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60/188605 |
Mar 2000 |
US |