The present disclosure relates generally to a waveguide interface and printed circuit board launch transducer assembly for microwave and millimeter wave radio frequency technologies. More specifically, the present disclosure relates to a waveguide interface including a printed circuit board with an integrated launch transducer that may utilized with surface mounted millimeter wave semiconductor integrated circuits.
As the semiconductor industry continues to increase circuit complexity and density by reduction of process node geometries, operating signal frequencies continue to increase. It is now possible to obtain semiconductors that operate well into the millimeter wave region of radio spectrum (30 GHz to 300 GHz). Traditionally, the types of semiconductors used have been in the category of “III-V” types, indicating that the semiconductor compounds have been derived from periodic table elements in the third and fifth columns, such as gallium arsenide (GaAs) and indium phosphide (InP). In recent years, less expensive semiconductor processes that arise from column IV of the periodic table, such as silicon (Si) and germanium (Ge) have been produced in silicon CMOS (complementary metal oxide semiconductor) and silicon germanium (SiGe) compounds. The result has been to extend the operating frequency of low-cost silicon semiconductors well into the 60 to 80 GHz range of frequencies. The availability of low-cost semiconductor technology has put pressure on millimeter wave manufactures to bring the overall costs down for the electromechanical support mechanisms that enable these semiconductor devices.
Commercial waveguide structures enable low-loss energy transfer at millimeter wave frequencies, with the additional benefit of standardization of size and mechanical coupling flange designs. The standardized sizes and coupling flanges enable interoperability between different devices and different manufactures, providing maximal flexibility for millimeter wave system design.
One method for interfacing semiconductor devices within a mechanical waveguide has been to couple energy from an orthogonal planar printed circuit launch probe with associated lossy energy transfer. Energy is coupled in and out of semiconductor devices by providing a printed circuit board with a stub or paddle energy launch attached as an additional substrate on the printed circuit board. The stub or paddle launch is orthogonal to the waveguide cavity, also requiring a split-cavity type of assembly method, creating additional expense.
In prior waveguide interface devices, a semiconductor die (non-packaged) is utilized, which requires wire bonding from the die pads to the printed circuit board. Wire bonding is an expensive process and is prone to errors and yield problems. Wafer level chip scale packaging (WLCSP) is emerging as a high-efficiency packaging technique for millimeter wave semiconductor integrated circuits. WLCSP allows the device to be processed directly onto the printed circuit board assembly using standard surface mount technologies, which provides cost savings. However, standard launch transducer technologies utilized in the art, which require an additional substrate on the printed circuit board assembly or attempt to launch millimeter wave energy orthogonally to a waveguide aperture, are either not compatible or inefficient with WLCSP packaging techniques.
A waveguide assembly includes a support block and a waveguide interface coupled to an end portion of the support block and extending from the support block. The waveguide interface has a slot and one or more holes positioned to receive attachment devices to secure the waveguide interface to a waveguide flange. A printed circuit board assembly includes a plurality of layers, at least one of the plurality of layers formed of a dielectric material and having an extended portion extending beyond the other layers in the plurality of layers, wherein the extended portion is configured to be inserted into the slot in the waveguide interface when the printed circuit board assembly is positioned on the support block. A first metallic layer is located on at least a portion of the extended portion of the dielectric layer. The first metallic layer and the dielectric layer are configured to form a launch transducer comprising one or more transmission lines and at least one transducer element coupled to the one or more transmission lines. The transducer element is configured to propagate millimeter wave frequency signals and is configured to be located in the slot in the interface when the printed circuit board assembly is positioned on the support block.
A printed circuit board assembly comprising a plurality of layers. At least one of the plurality of layers is formed of a dielectric material and has an extended portion extending beyond the other layers in the plurality of layers. A first metallic layer is located on at least a portion of the extended portion of the dielectric layer. The first metallic layer and the dielectric layer are configured to form a launch transducer comprising one or more transmission lines and at least one transducer element coupled to the one or more transmission lines. The transducer element is configured to propagate millimeter wave frequency signals.
A method of forming a printed circuit board assembly includes providing a plurality of layers, at least one of the plurality of layers formed of a dielectric material. The plurality of layers is milled such that the at least one of the plurality of layers formed of a dielectric material has an extended portion extending beyond the other layers in the plurality of layers. A first metallic layer is deposited on at least a portion of the at least one of plurality of layers formed of the dielectric material. The first metallic layer and the dielectric layer are configured to form a launch transducer comprising one or more transmission lines and one or more transducer elements coupled to the one or more transmission lines. The transducer element is configured to propagate millimeter wave frequency signals.
This exemplary technology provides a number of advantages including providing a printed circuit board assembly including an integrated launch transducer device that is compatible with wafer level chip scale packaging techniques for millimeter wave semiconductor integrated circuits. The printed circuit board assembly with the integrated transducer device may be employed in waveguide interfaces employed at high operating frequencies. The printed circuit board assembly with integrated transducer device allows for wafer level chip scale packaging of the semiconductor integrated circuits employed with the launch transducer with nominal impact on the overall performance, which eliminates the need for expensive wire bonding.
Referring to
As described below, the waveguide assembly 10 may be utilized for electromagnetic transmission and electromagnetic reception. Both the transmission context and the reception context equally apply due to the Lorentz electromagnetic reciprocity theorem. This exemplary technology provides a number of advantages including providing a waveguide assembly, including a waveguide interface that may be utilized at high operating frequencies. The waveguide assembly of the present technology incorporates, in one example, a printed circuit board assembly with an integrated launch transducer with nominal impact on the overall performance of the waveguide assembly. The printed circuit board assembly with the integrated launch transducer allows for incorporating semiconductor integrated circuits using surface mount technologies, which significantly reduces the overall cost of the waveguide assembly.
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Waveguide interface 12(2) includes a support block 24(2) and an interface 26(2) that are molded in an injection molding process as a single, monolithic structure, although other types of molding techniques may be utilized. The waveguide interface 12(2), by way of example only, may be constructed of an injection moldable metal alloy such as Xyloy™ M950, although other types of moldable metal alloys may be utilized to form the waveguide interface 12(2). The outer shape of the waveguide interface 12(2) has been customized to allow for removal from a mold to enable the generation of the single monolithic structure, as discussed below. Specifically, the waveguide interface 12(2) includes a plurality of draft angles as discussed below. The draft angles, discussed more specifically below, provide for removal of the waveguide interface 12(2) without significant impact to the overall performance on the waveguide interface 12(2) in the waveguide assembly 10. In particular, by way of example only, the propagation of millimeter wave energy into the opening of a waveguide flange connected to the waveguide interface 12(2) is altered by less than one percent, which does not impact the overall operating frequency range. Further, the waveguide cutoff frequency is altered by less than one percent. Although various exemplary dimensions are described below, it is to be understood that the dimensions may be varied.
Support block 24(2) includes a top surface 100 configured to support a printed circuit board assembly (not shown), such as printed circuit board assembly 14 or printed circuit board assembly 140, by way of example. By way of example, the printed circuit board assembly may be attached to the top surface 100 of the support block 24(2) using an adhesive. The top surface 100 has side edges 102 that are tapered with a draft angle of approximately a 4 degree angle as illustrated in
The support block 24(2) includes sides 106 and end 108 that taper downward from the top surface 100 with a draft angle of approximately 4 degrees, such that the support block 24(2) has a width of approximately 0.315 inches at a lower end edge 110. The support block 24(2) further includes a tapered bottom surface 112 at a draft angle of approximately 4 degrees as shown in
In this example, with the modified design with the draft angles and dimensions noted above, the support block 24(2) and the interface 26(2) can be molded as a single, monolithic device. The support block 24(2) extends from the interface 26(2) in a plane orthogonal to the interface 26(2). The interface 26(2) is a circular interface configured to be coupled to a waveguide flange (not shown), such as waveguide flange 22, which by way of example may be a standard waveguide flange known in the art. The interface 26(2) includes a slot 34(2) configured to receive a portion of a printed circuit board assembly, including a launch transducer. In use, the slot 34(2) and an inserted printed circuit board assembly form a short waveguide segment within the waveguide interface 12(2) in the same manner as described with respect to the waveguide interface 12(1) above.
In this example, the slot 34(2) has width of approximately 0.400 inches and a height of approximately 0.080 inches at the front opening as illustrated in
The interface 26(2) includes outer edges 118 with a draft angle of approximately 2 degrees from a front end 119A to a rear end 119B of the outer edge 118 as shown in
The interface 26(2) also includes interface guide pins 122 located on a rear surface of the interface 26(2) that provide alignment between the interface 26(2) and a waveguide flange, although the interface 26(2) may have other devices in other locations to facilitate alignment between the interface 26(2) and a standard waveguide flange. In this example, the interface guide pins 122 have a tapered shape with a draft angle of approximately 2 degrees from a front end 123A to a rear end of the interface guide pins 122 as shown in
Referring now to
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The cut out area 42, which includes the cut out bottom surface 44 and cut out side surfaces 46A and 46B, is metallized using standard printed circuit plating techniques. The cut out area 40 is copper and gold plated to maintain a continuous electrical ground plane, although other conductive materials may be utilized. Printed circuit board assembly 14 further includes a top ground plane area 48, a side ground plane area 50, a front ground plane area 52, and a bottom ground plane area 54 that are metallized using standard printed circuit plating techniques, such that the top ground plane area 48, the side ground plane area 50, the front ground plane area 52, and the bottom ground plane area 54 are electrically contiguous. The top ground plane area 48, the side ground plane area 50, the front ground plane area 52, and the bottom ground plane area 54 are copper and gold plated, although other conductive materials may be utilized. The top ground plane area 48 is further electrically contiguous with the cutout side surfaces 46A and 46B and the cut out bottom surface 44 of the cut out area 42. The front ground plane area 52 provides an electrical ground plane in the local interface region of the interface plate 26(1) or interface 26(2) and waveguide flange 22.
Referring now to
Low-frequency signal and power connections are supplied to the communication device 18(1) via a plurality of wire bonds 56 from corresponding wire bond pads 58, although other interconnection technologies besides wire bond pads 58 may be utilized. High-frequency millimeter wave connections are provided between the communication device 18(1) and the adjacently positioned launch transducer 20(1) with low-inductance wire or ribbon bonds 60(1), although other connection technologies may be utilized. The printed circuit assembly 14 includes a width defined by edges 62A and 62B.
Referring now to
Low-frequency signal and power connections from the printed circuit assembly 14 are provided to the communication device 18(2) via a plurality of wire bonds 56 from corresponding wire bond pads 58, although other interconnection technologies may be utilized. High-frequency millimeter wave connections are communicated between the communication device 18(2) and the launch transducer 20(2) with low-inductance wire or ribbon bonds 60(2), although other connection technologies may be utilized.
Referring again to
The communication device 18(1) is a highly integrated millimeter wave radio transmitter that is attached to the printed circuit assembly 14, although the communication device may alternatively be a highly integrated millimeter wave radio receiver, such as communication device 18(2) shown in
Referring again to
The top metallization pattern of the transmitter launch transducer 20(1) is composed of a first pair of transmission line sections 68A and 68B. The first pair of transmission line sections 68A and 68B are implemented over a ground plane 70 on the bottom side of the low-loss substrate 66. The first pair of transmission line sections 68A and 68B couple energy from the communication device 18(1) via bond wires 60(1), as shown in
The second pair of transmission line sections 72A and 72B are located over a clear substrate section (with no ground plane on the bottom side of the low-loss substrate 66 in this section) and provide energy from the first pair of transmission lines 68A and 68B to a pair of corresponding transducer elements 74A and 74B. The second pair of transmission line sections 72A and 72B are implemented to match the input impedance of the transducer elements 74A and 74B.
The transducer elements 74A and 74B are configured to provide substantial energy propagation in a direction parallel to the low-loss substrate 66 and away from the second pair of transmission line sections 72A and 72B, thereby forming an end-fire propagation pattern into an opening in the waveguide flange opening. The launch transducer 20(1) has a width dimension, Yt, that is matched to be inserted into the standard waveguide flange opening having the “b” dimension described below. In one example, Yt is 1.80 mm and the value of Xt is 2.87 mm, although other values for these dimensions are contemplated. Although an exemplary configuration for the launch transducer 20(1) is illustrated and described, alternative configurations may be utilized. By way of example, in another embodiment, launch transducer 20(1) may include a variation of a dipole with a parasitic element as illustrated in
Referring again
In this example, the top metallization pattern includes a transmission line center conductor 78 that traverses a length over a ground plane 80, which is located on the bottom side of the low-loss substrate 76. Beyond the position of ground plane 80, the transmission line center conductor 78 continues and is positioned over a bottom side transmission line 82. The transmission line center conductor 78 and the bottom side transmission line 82 together are coupled to transducer elements 84A, 84B, 84C, and 84D. The transducer elements 84A and 84B and 84C and 84D, respectively, form dual element dipoles and are configured to provide a directional propagation pattern in a direction parallel to the low-loss substrate 76 and away from the transmission line center conductor 78 and the bottom side transmission line 82, thereby forming an end-fire propagation pattern into a waveguide flange opening, as discussed below.
The unbalanced input circuit configuration is composed of a ground connection 86 and the transmission line center conductor 78. The ground connection 86 is electrically connected through the low-loss substrate 76 and facilitated by metalized plating through holes (also known as vias) 88A and 88B, thereby forming a low-inductance connection to the ground plane 80 on the bottom side of the low-loss substrate 76. In one example, the diameter of via holes 88A and 88B is 127 micrometers (μm) with gold metallization formed on the inner walls, although other dimensions and material selections are contemplated.
Referring now to
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The top layers 143(1) and 143(2) each include an extended portion 144(1) and 144(2), respectively, formed by milling and undercutting the additional layers in the plurality of layers 140(1) and 140(2). The extended portions 144(1) and 144(2) are configured to be located in the waveguide segment 36 of the waveguide interface 26(2), as shown in
Referring now more specifically to
The launch transducer element 200(1) includes matching balanced transmission line terminals that may be coupled to and efficiently accept high-frequency energy from the communication device 180 based on a coupling as shown in
The top layer 143(1) provides a low-loss substrate for the launch transducer element 200(1), which has a top metallization pattern and a bottom metallization pattern. The top metallization pattern of the launch transducer element 200(1) comprises a first pair of transmission line sections 148A and 148B. The first pair of transmission line sections 148A and 148B are implemented over a ground plane 158 as shown in
The second pair of transmission line sections 152A and 152B are located over the extended portion 144(1) of the top layer 143(1), which provides a clear substrate section (with no ground plane on the bottom side of the low-loss top layer 143(1) in this section as shown in
The transducer elements 154A and 154B are configured to provide substantial energy propagation in a direction parallel to the low-loss dielectric top layer 143(1) and away from the second pair of transmission line sections 152A and 152B, thereby forming an end-fire propagation pattern into an opening in the waveguide flange opening. The launch transducer element 200(1) has a width dimension, Yt, that is matched to be inserted into the standard waveguide flange opening having the “b” dimension described above with respect to
Referring now more specifically to
The launch transducer element 200(2) is implemented with matching unbalanced transmission line terminals to efficiently deliver high-frequency energy to the communication device 180, by way of example only. The launch transducer element 200(2) is located precisely at the midpoint between the width edges of the printed circuit assembly 140(2). The launch transducer 200(2) has a width that is precisely matched to the opening of the waveguide flange dimension, as discussed above with respect to
The top layer 143(2) provides a low-loss substrate for the launch transducer element 200(2), which has a top metallization pattern and a bottom metallization pattern. In this example, the top metallization pattern, which is printed or etched onto the top layer 143(2) using a conductive material, includes a transmission line center conductor 156 that traverses a length over a ground plane 158 as shown in
The unbalanced input circuit configuration is composed of a ground connection and the transmission line center conductor 156. The ground connection is electrically connected from the communication device 180, which acts as a receiver, through the low-loss top layer 143(2) and facilitated by metalized plating through holes (also known as vias), thereby forming a low-inductance connection to the ground plane 158 on the bottom side of the low-loss top layer 143(2).
Referring now to
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Printed circuit board assembly 140(1) further includes a connector 160 that is a multi-pin connector that provides the lower-frequency electrical signals and power connections to the communication device 180, although other types of connectors suitable to provide the lower-frequency electrical signals and power connections to the communication device 180 may be utilized. The connector 160 is located on the printed circuit assembly 140(1) and is located at the rear of the waveguide interface when assembled, as shown in
Referring now more specifically to
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The top layers 143(3)-143(6) each include an extended portion 144(3)-144(6), respectively, formed by milling and undercutting the additional layers in the plurality of layers. The extended portions 144(1)-144(6) are configured to be located in the waveguide segment 36 of the waveguide interface 26(2), as shown in
Referring now more specifically to
The launch transducer elements 200(3), and 200(5) include matching balanced transmission line terminals that may be coupled to and efficiently accept high-frequency energy from the communication device 180 based on a coupling as shown in
The top layers 143(3), 143(5) provide a low-loss substrate for the launch transducer elements 200(3), 200(5) which have a top metallization pattern and a bottom metallization pattern. The top metallization pattern of the launch transducer elements 200(3), 200(5) comprises a first pair of transmission line sections 148A and 148B. The first pair of transmission line sections 148A and 148B are implemented over a ground plane on the bottom side of the top dielectric layers 143(3), 143(5). The first pair of transmission line sections 148A and 148B couple energy from the communication device 180 to a second pair of transmission line sections 152A and 152B. The first pair of transmission line sections 148A and 148B are implemented to match the output impedance of the communication device 180 in a balanced configuration.
The second pair of transmission line sections 152A and 152B are located over the extended portions 144(3), 144(5) of the top layers 143(3), 144(5), which provides a clear substrate section (with no ground plane on the bottom side of the low-loss top layers 143(3), 143(5) in this section) and provide energy from the first pair of transmission lines 148A and 148B to a pair of corresponding transducer elements 154A and 154B. The second pair of transmission line sections 152A and 152B are implemented to match the input impedance of the transducer elements 154A and 1544B.
The transducer elements 154A and 154B are configured to provide substantial energy propagation in a direction parallel to the low-loss dielectric top layers 143(3), 143(5) and away from the second pair of transmission line sections 152A and 152B, thereby forming an end-fire propagation pattern into an opening in the waveguide flange opening. The launch transducer elements 200(3), 200(5) have a width dimension, Yt, that is matched to be inserted into the standard waveguide flange opening having the “b” dimension described above with respect to
Referring now more specifically to
Referring now more specifically to
The launch transducer elements 200(4), 200(6) are implemented with matching unbalanced transmission line terminals to efficiently deliver high-frequency energy to the communication device 180, by way of example only. The launch transducer elements 200(4), 200(6) are located precisely at the midpoint between the width edges of the printed circuit assemblies 140(4), 140(6). The launch transducer elements 200(4), 200(6) have a width that is precisely matched to the opening of the waveguide flange dimension, as discussed above with respect to
The top layers 143(4), 143(6) provide a low-loss substrate for the launch transducer elements 200(4), 200(6), which have a top metallization pattern and a bottom metallization pattern. In this example, the top metallization pattern, which is printed or etched onto the top layers 143(4), 143(6) using a conductive material, includes a transmission line center conductor 256 that traverses a length over a ground plane located on the bottom side of the low-loss top layers 143(4), 143(6). Beyond the position of the ground plane, the transmission line center conductor 256 continues and is positioned over a bottom side transmission line 258. The transmission line center conductor 256 and the bottom side transmission line 258 together are coupled to transducer elements that form a dual element dipole that is configured to provide a directional propagation pattern in a direction parallel to the low-loss top layers 143(4), 143(6) of the printed circuit board assemblies 140(4), 140(6) and away from the transmission line center conductor 256 and the bottom side transmission line 258, thereby forming an end-fire propagation pattern into a waveguide flange opening, as discussed below.
The unbalanced input circuit configuration is composed of a ground connection and the transmission line center conductor 256. The ground connection is electrically connected from the communication device 180, which acts as a receiver, through the low-loss top layers 143(4), 143(6) and facilitated by metalized plating through holes (also known as vias), thereby forming a low-inductance connection to the ground plane on the bottom side of the low-loss top layers 143(4), 143(6).
Referring now more specifically to
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The printed circuit board assemblies 140(3)140(6) further include a connector 160 that is a multi-pin connector that provides the lower-frequency electrical signals and power connections to the communication device 180 or the additional communication devices 280(1)-280(n), although other types of connectors suitable to provide the lower-frequency electrical signals and power connections to the communication devices may be utilized. The connector 160 is located on the printed circuit assemblies 140(3)-140(6) and is located at the rear of the waveguide interface when assembled, as shown in
Referring now to
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The printed circuit board assembly 140(5) is positioned such that the transducer element 200(5) extends into the rectangular slot 34(3) located through the interface plate waveguide flange 26(3), as shown in
Referring again to
As shown in
An example of the operation of the waveguide assembly 10, including either waveguide interface 12(1) or waveguide interface 12(2) will now be described with respect to
Critical to the high efficiency and operation of the waveguide interfaces 12(1) and 12(2) is to facilitate propagation of millimeter wave energy into standard waveguide flange opening 90 and also restrict energy losses as the conducted electrical energy moves from the communications device 18(1) through the high frequency wire bonds 60(1) to the first pair of transmission lines 68A and 68B. The short waveguide segment 36 is defined between the rectangular slot 34(1) of interface plate 26(1), or interface 26(2), and the upper ground plane surface 48 of the printed circuit board assembly 14. The printed circuit board assembly 14 also has contiguous copper plating at side ground plane area 50 and front ground plane area 52, which form the lower portion of the short waveguide segment 36.
The waveguide cutoff frequency is the frequency at which all frequencies below the cutoff frequency are substantially attenuated. Equation [1], derived from the Helmholtz equation for electromagnetic waves, provides the waveguide cutoff frequency for rectangular waveguide with an internal H-field “a” dimension and internal E-field “b” dimension.
In equation [1], ωc is radian frequency, c is the speed of light, a is the H-field rectangular waveguide dimension, b is the E-field rectangular waveguide dimension, and n and m represent the waveguide mode numbers. The dominant waveguide mode is used to determine waveguide cutoff and is known in the art as transverse electric mode 1,0 (TE1,0) where n=1 and m=0. With n=1 and m=0, the only variable remaining is the waveguide H-field “a” dimension.
In one example, for the standard waveguide flange 22, the “a” dimension is 3.76 mm which yields a cutoff frequency of 39.9 GHz, well below the intended operating frequency range of standard waveguide flange 22, which is 50 to 75 GHz. However, it is desired to substantially attenuate the transduction of energy over the operating frequency range of the waveguide interface in the short waveguide segment 36.
The H-field dimension of short waveguide segment 36 is shown as the “a′” dimension. In one example, the “a′” dimension is approximately 0.98 mm (980 μm). Setting a in equation [1] to 0.98 mm with dominant mode (n=1 and m=0) yields a cutoff frequency of 153 GHz, well above the intended operating range of the waveguide interface. There will be slight variations of the cutoff frequency as the dimension “a′” varies as a function of the thickness of the printed circuit board assembly 14 and the effective dimension “a′” varies due to the dielectric loading properties and thickness variation of launch transducer 20(1). However, with all variations taken into account, the minimum waveguide cutoff frequency for either the transmitter waveguide interface or the receiver waveguide interface is greater than 120 GHz. By establishing short segment waveguide 36 cutoff frequency well above the operating frequency range of the waveguide interface, maximum energy is provided to the standard waveguide opening 90.
Accordingly, this exemplary technology provides a number of advantages including providing a waveguide assembly including a waveguide interface that may be utilized at high operating frequencies. The waveguide assembly of the present technology incorporates, in one example, a printed circuit board assembly that includes an integrated launch transducer element that can interact with integrated circuits applied to the printed circuit board assembly using surface mount technologies. This avoids costly wire bonding between the printed circuit board assembly and the integrated circuit employed.
Having thus described the basic concept of the disclosed technology, it will be rather apparent to those skilled in the art that the foregoing detailed disclosure is intended to be presented by way of example only, and is not limiting. Various alterations, improvements, and modifications will occur and are intended to those skilled in the art, though not expressly stated herein. These alterations, improvements, and modifications are intended to be suggested hereby, and are within the spirit and scope of the disclosed technology. Additionally, the recited order of processing elements or sequences, or the use of numbers, letters, or other designations therefore, is not intended to limit the claimed processes to any order except as may be specified in the claims. Accordingly, the invention is limited only by the following claims and equivalents thereto.
Number | Name | Date | Kind |
---|---|---|---|
3265995 | Hamasaki | Aug 1966 | A |
4458222 | Herstein et al. | Jul 1984 | A |
4684952 | Munson et al. | Aug 1987 | A |
4752680 | Larsson | Jun 1988 | A |
4754239 | Sedivec | Jun 1988 | A |
4939726 | Flammer et al. | Jul 1990 | A |
5007052 | Flammer | Apr 1991 | A |
5079768 | Flammer | Jan 1992 | A |
5103210 | Rode et al. | Apr 1992 | A |
5115433 | Baran et al. | May 1992 | A |
5130987 | Flammer | Jul 1992 | A |
5198786 | Russell et al. | Mar 1993 | A |
5218189 | Hutchison | Jun 1993 | A |
5235300 | Chan et al. | Aug 1993 | A |
5276345 | Siegel et al. | Jan 1994 | A |
5347287 | Speciale | Sep 1994 | A |
5444223 | Blama | Aug 1995 | A |
5465398 | Flammer | Nov 1995 | A |
5479400 | Dilworth et al. | Dec 1995 | A |
5486830 | Axline, Jr. et al. | Jan 1996 | A |
5488608 | Flammer, III | Jan 1996 | A |
5515369 | Flammer, III et al. | May 1996 | A |
5570084 | Ritter et al. | Oct 1996 | A |
5726630 | Marsh et al. | Mar 1998 | A |
5754948 | Metze | May 1998 | A |
5767802 | Kosowsky et al. | Jun 1998 | A |
5784543 | Marchand | Jul 1998 | A |
5864061 | Dilz, Jr. | Jan 1999 | A |
5903239 | Takahashi et al. | May 1999 | A |
5903566 | Flammer, III | May 1999 | A |
5960029 | Kim et al. | Sep 1999 | A |
6027027 | Smithgall | Feb 2000 | A |
6028560 | Pfizenmaier et al. | Feb 2000 | A |
6037894 | Pfizenmaier et al. | Mar 2000 | A |
6104333 | Wood, Jr. | Aug 2000 | A |
6236366 | Yamamoto et al. | May 2001 | B1 |
6236761 | Marchand | May 2001 | B1 |
6366245 | Schmidt et al. | Apr 2002 | B1 |
6424315 | Glenn et al. | Jul 2002 | B1 |
6427922 | Marchand | Aug 2002 | B1 |
6476756 | Landt | Nov 2002 | B2 |
6509836 | Ingram | Jan 2003 | B1 |
6542083 | Richley et al. | Apr 2003 | B1 |
6545646 | Marchand | Apr 2003 | B2 |
6547140 | Marchand | Apr 2003 | B2 |
6600428 | O'Toole et al. | Jul 2003 | B1 |
6696879 | O'Toole et al. | Feb 2004 | B1 |
6708881 | Hartmann | Mar 2004 | B2 |
6721289 | O'Toole et al. | Apr 2004 | B1 |
6735183 | O'Toole et al. | May 2004 | B2 |
6771981 | Zalewski et al. | Aug 2004 | B1 |
6820897 | Breed et al. | Nov 2004 | B2 |
6836472 | O'Toole et al. | Dec 2004 | B2 |
6867983 | Liu et al. | Mar 2005 | B2 |
6874639 | Lawandy | Apr 2005 | B2 |
6891391 | Hiroki | May 2005 | B2 |
6972714 | Baharav et al. | Dec 2005 | B1 |
6987429 | Shih et al. | Jan 2006 | B2 |
7289065 | Prieto-Burgos et al. | Oct 2007 | B2 |
7295161 | Gaucher et al. | Nov 2007 | B2 |
RE40253 | Kim et al. | Apr 2008 | E |
7372408 | Gaucher et al. | May 2008 | B2 |
7373107 | Wesolowski | May 2008 | B1 |
RE40385 | Bang et al. | Jun 2008 | E |
7443906 | Bang et al. | Oct 2008 | B1 |
RE41531 | Wood, Jr. | Aug 2010 | E |
9088058 | Pettus et al. | Jul 2015 | B2 |
20020140557 | Dukler et al. | Oct 2002 | A1 |
20030002029 | Dukler et al. | Jan 2003 | A1 |
20030035131 | Dukler et al. | Feb 2003 | A1 |
20030137446 | Vavik | Jul 2003 | A1 |
20040159708 | Yogev et al. | Aug 2004 | A1 |
20040169847 | Dukler | Sep 2004 | A1 |
20040211840 | Yogev et al. | Oct 2004 | A1 |
20040217171 | Devos et al. | Nov 2004 | A1 |
20060109176 | Lee et al. | May 2006 | A1 |
20070103380 | Weste | May 2007 | A1 |
20070229182 | Gaucher et al. | Oct 2007 | A1 |
20080218413 | Li et al. | Nov 2008 | A1 |
20160013534 | Pettus | Jan 2016 | A1 |
Number | Date | Country |
---|---|---|
4127892 | Feb 1993 | DE |
19725492 | Aug 1998 | DE |
102004045707 | Mar 2006 | DE |
0766410 | Apr 1997 | EP |
0884799 | Dec 1998 | EP |
1357395 | Oct 2003 | EP |
60-230701 | Nov 1985 | JP |
06-038304 | May 1994 | JP |
2005-536144 | Nov 2005 | JP |
2006279199 | Oct 2006 | JP |
20060010867 | Feb 2006 | KR |
200065691 | Nov 2000 | WO |
2004004083 | Jan 2004 | WO |
2006007002 | Jan 2006 | WO |
2006102749 | Oct 2006 | WO |
Entry |
---|
Office Action for Korean Application No. 10-2012-7006846, dated Nov. 5, 2016, pp. 1-9. |
Leong, Kevin et al., “A 340-380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging”, IEEE Microwave and Wireless Components Letters, vol. 19, No. 6, Jun. 2009. |
European Search Report for EP Application No. 10810601.4, dated Nov. 10, 2017, pp. 1-9. |
Zhang, W. et al., “3D Beamforming for Wireless Data Centers,” Hotnets '11, Cambridge, MA, Nov. 14-15, 2011. |
International Search Report and Written Opinion for International Patent Application No. PCT/US2010/046028 (dated Apr. 25, 2011). |
Abele, P. et al, “Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer,” 11th GAAS Symposium, 2003. |
Agarwal, B et al. “A Transferred-Substrate HBT Wide-Band Differential Amplifier to 50 GHz,” IEEE Microwave and Guided Wave Letters, vol. 8, No. 7, Jul. 1998. |
Al-Fares et al. “A Scalable, Commodity Data Center Network Architecture,” SIGCOMM '08, Seattle, WA, Aug. 17-22, 2008. |
Aoki, S. et al., “A Flip Chip Bonding Technology Using Gold Pillars for Millimeter-Wave Applications,” IEEE MTT-S Digest, 1997. |
Bodo, P., “Low Cost Interconnect, Packaging and Sub-System Integration Technologies for Millimetrere-wave Applications,” Temadag Framtidens Radar Front-End Jönköping, Mar. 9, 2005. |
Boustedt, K., “GHz Flip Chip—An Overview,” Ericsson Microwave Systems AB, Core Unit Research Center Microwave and High Speed Electronics, 2005. |
Brauner, T., “A Differential Active Patch Antenna Element for Array Applications,” IEEE Microwave and Wireless Components Letters, vol. 13, No. 4, Apr. 2003. |
Clos, C., “A Study of Non-Blocking Switching Networks,” The Bell System Technical Journal, Oct. 30, 1952. |
Cui, Y. et al., “Wireless Data Center Networking,” IEEE Wireless Communications, Dec. 2011. |
Cui, Y. et al., “Channel Allocation in Wireless Data Center Networks,” IEEE INFOCOM Technical Paper, 2011. |
Deal, W. et al., “Integrated-Antenna Push-Pull Power Amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 47, No. 8, Aug. 1999. |
Gilleo, K., “Chip Scale or Flip Scale—the Wrong Question?”, Cookson Electronics, 1998. |
Halperin, D. et al., “Augmenting Data Center Networks with Multi-Gigabit Wireless Links,” SIGCOMM '11 Toronto, Ontario, Canada, Aug. 15-19, 2011. |
Hang, C. et al., “High-Efficiency Push-Pull Power Amplifier Integrated with Quasi-Yagi Antenna,” IEEE Transactions on Microwave Theory and Techniques, vol. 49, No. 6, Jun. 2001. |
Higginbotham, S., “Forget Ethernet, Researchers Want Data Centers to Go Wireless,” Internet article, Dec. 20, 2011. |
Jentzsch, A. et al., “Theory and Measurements of Flip-Chip Interconnects for Frequencies up to 100 GHz,” IEEE Transactions on Microwave Theory and Techniques, vol. 49, No. 5, May 2001. |
Karnfelt, C. et al, “Flip Chip Assembly of a 40-60 GHz GaAs Microstrip Amplifier,” 12th GAAS® Symposium—Amsterdam, 2004. |
Katayama Y. et al., “Wireless Data Center Networking with Steered-Beam mmWave Links,” IEEE WCNC 2011—Service and Application, 2011. |
Graham-Rowe, D., “Bouncing Data Would Speed Up Data Centers,” MIT Published Article, http://www.technologyreview.com/communications/39367/?ref=rss, Dec. 20, 2011. |
Owano, N., “Bouncing Signals Off Ceiling Can Rev Up Data Centers,” PhysOrg.com, Published Dec. 21, 2011. |
Pfeiffer, U., et al., “A 60GHz Radio Chipset Fully-Integrated in a Low-Cost Packaging Technology,” 2006 Electronic Components and Technology Conference, 2006. |
Pfeiffer, U., et al., “A Chip-Scale Packaging Technology for 60-GHz Wireless Chip Sets,” IEEE Transactions on Microwave Theory and Techniques, vol. 54, No. 8, Aug. 2006. |
Pfeiffer, U., et al., “Equivalent Circuit Model Extraction of Flip-Chip Ball Interconnects Based on Direct Probing Techniques,” IEEE Microwave and Wireless Components Letters, vol. 15, No. 9, Sep. 2005. |
Pfeiffer, U., “Low-loss Contact Pad with Tuned Impedance for Operation at Millimeter Wave Frequencies,” IEEE SPI 2005, 2005. |
Ramachandran, K. et al., “60 GHz Data-Center Networking: Wireless Worry Less?” WINLAB, Rutgers University and NEC Laboratories America, NJ, Jul. 14, 2008. |
Schrank, H. et al., “Analysis of the Radiation Resistance and Gain of a Full-Wave Dipole,” IEEE Antennas and Propagation Magazine, vol. 36, No. 5, Oct. 1994. |
Shin, J. et al., “On the Feasibility of Completely Wireless Data Centers,” Department of Computer Science, Cornell University and Microsoft Research, May 3, 2011. |
Staiculescu, D. et al., “Flip Chip vs. Wirebond,” Printed Circuit Design, Jun. 2012. |
Barroso, L. et al., “The Datacenter as a Computer, An Introduction to the Design of Warehouse Scale Machines”, 2009. |
Vardhan, H. et al., “Wireless Data Center with Millimeter Wave Network,” IEEE Globecom 2010 Proceedings, 2010. |
Viallon, C. et al., “Microwave Differential Structures Optimization: Application to a Double Balanced SiGe Active Down-Converter Design,” IEEE International Workshop on Radio-Frequency Integration Technology, Singapore, Nov. 30-Dec. 2, 2005. |
Number | Date | Country | |
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20190207283 A1 | Jul 2019 | US |