These and other features, aspects, and advantages of the present invention will become better understood when the following detailed description is read with reference to the accompanying drawings in which like characters represent like parts throughout the drawings, wherein:
In the embodiment illustrated in
The source of radiation 12 may be positioned near a collimator 14, which may be configured to shape a stream of radiation 16 that is emitted by the source of radiation 12. The stream of radiation 16 passes into the imaging volume containing the subject to be imaged, such as a human patient 18. The stream of radiation 16 may be generally fan-shaped or cone-shaped, depending on the configuration of the detector array, discussed below, as well as the desired method of data acquisition. A portion 20 of radiation passes through or around the subject and impacts a detector array, represented generally at reference numeral 22. Detector elements of the array produce electrical signals that represent the intensity of the incident X-ray beam. These signals are acquired and processed to reconstruct an image of the features within the subject.
The radiation source 12 is controlled by a system controller 24, which furnishes both power, and control signals for CT examination sequences. Moreover, the detector 22 is coupled to the system controller 24, which commands acquisition of the signals generated in the detector 22. The system controller 24 may also execute various signal processing and filtration functions, such as for initial adjustment of dynamic ranges, interleaving of digital projection data, and so forth. In general, system controller 24 commands operation of the imaging system to execute examination protocols and to process acquired data. In the present context, system controller 24 also includes signal processing circuitry, typically based upon a general purpose or application-specific digital computer, associated memory circuitry for storing programs and routines executed by the computer, as well as configuration parameters and projection data, interface circuits, and so forth.
In the embodiment illustrated in
Additionally, as will be appreciated by those skilled in the art, the source of radiation 12 may be controlled by an X-ray controller 30 disposed within the system controller 24. Particularly, the X-ray controller 30 is configured to provide power and timing signals to the X-ray source 12.
Further, the system controller 24 is also illustrated as including a data acquisition system 34. In this exemplary embodiment, the detector 22 is coupled to the system controller 24, and more particularly to the data acquisition system 34. The data acquisition system 34 receives data collected by readout electronics of the detector 22. The data acquisition system 34 typically receives sampled analog signals from the detector 22 and converts the data to digital signals for subsequent processing by a computer 36.
The computer 36 typically is coupled to or incorporates the system controller 24. The data collected by the data acquisition system 34 may be transmitted to the computer 36 for subsequent processing and reconstruction. The computer 36 may include or communicate with a memory 38 that can store data processed by the computer 36 or data to be processed by the computer 36. It should be understood that any type of memory configured to store a large amount of data might be utilized by such an exemplary system 10. Moreover, the memory 38 may be located at the acquisition system or may include remote components, such as network accessible memory media, for storing data, processing parameters, and/or routines for implementing the techniques described below.
The computer 36 may also be adapted to control features such as scanning operations and data acquisition that may be enabled by the system controller 24. Furthermore, the computer 36 may be configured to receive commands and scanning parameters from an operator via an operator workstation 40, which is typically equipped with a keyboard and other input devices (not shown). An operator may thereby control the system 10 via the input devices. Thus, the operator may observe the reconstructed image and other data relevant to the system from computer 36, initiate imaging, and so forth.
A display 42 coupled to the operator workstation 40 may be utilized to observe the reconstructed images. Additionally, the scanned image may also be printed by a printer 44, which may be coupled to the operator workstation 40. The display 42 and printer 44 may also be connected to the computer 36, either directly or via the operator workstation 40. The operator workstation 40 may also be coupled to a picture archiving and communications system (PACS) 46. It should be noted that PACS 46 might be coupled to a remote system 48, such as radiology department information system (RIS), hospital information system (HIS) or to an internal or external network, so that others at different locations may gain access to the projection data.
It should be further noted that the computer 36 and operator workstation 40 may be coupled to other output devices, which may include standard or special purpose computer monitors and associated processing circuitry. One or more operator workstations 40 may be further linked in the system for outputting system parameters, requesting examinations, viewing images, and so forth. In general, displays, printers, workstations, and similar devices supplied within the system may be local to the data acquisition components, or may be remote from these components, such as elsewhere within an institution or hospital, or in an entirely different location, linked to the image acquisition system via one or more configurable networks, such as the Internet, a virtual private network or the like.
As noted above, an exemplary imaging system utilized in a present embodiment may be a CT scanning system 50, as depicted in greater detail in
In typical operation, the X-ray source 12 projects an X-ray beam from the focal point 62 and toward detector array 22. The collimator 14 (see
Thus, as the X-ray source 12 and the detector 22 rotate, the detector 22 collects data related to the attenuated X-ray beams. Data collected from the detector 22 then undergoes pre-processing and calibration to condition the data to represent the line integrals of the attenuation coefficients of the scanned objects. The processed data, commonly called projections, may then be filtered and back projected to formulate an image of the scanned area. A formulated image may incorporate, in certain modes, projection data for less or more than 360 degrees of rotation of the gantry 54.
Once reconstructed, the image produced by the system of
In one embodiment, an X-ray detector 22 is configured to detect the stream of incident radiation and to generate one or more signals responsive to the stream of radiation. It should be noted that each detector element of a detector is commonly referred to as a “pixel”. In a conventional sense, then, the pixel generally represents the smallest area unit that can be resolved by the detector. The radiation, such as radiation 20, impacting the detector 22 may have high flux rates for incident photons of radiation 20. High flux rates may result in pile-up and polarization, which may lead to detector saturation. If the detector operates in or near the saturation flux, the output signal may have same value with different objects. The detector saturation not only causes the contrast information to be lost in the saturation region, but also induces artifacts in non-saturated regions. Therefore, there is a need for a detector 22 that does not saturate at high flux rates.
As will be described in detail below with regard to
It should be noted that the terms electrode assembly and electrode pixels may be used interchangeably. Further, the terms count rate referring to counts per second and flux rate referring to counts per sec per unit area may be used interchangeably throughout the application. Also, it should be noted that the term “central readout electrode” does not indicate the physical location of the central readout electrode in the electrode assembly. In other words, the central readout electrode does not necessarily have to be central to the electrode assembly or pixels but may be disposed adjacent to the bias control portions. However, the central readout electrode may be disposed proximate to the bias control portions so as to dynamically change the active area of the electrode assembly. Additionally, the bias control portions do not necessarily have to enclose the area of the central readout electrode.
As will be described in detail below with regard to
In certain embodiments, the electrode assembly may include a central readout electrode in combination with one or more bias control portions. The bias control portions may be disposed adjacent to the central readout electrode to enclose the central readout electrode. The readout electrode will typically be connected to the readout electronics 88. Further, the number of bias control portions employed in an electrode assembly of a detector may vary depending on the values of incident flux rate dynamic range. For example, the number of bias control portions employed in the electrode assembly may be in a range of from about 1 to about 5. For example, for the flux rates in a range of from about 50 Mcps to about 100 Mcps, the number of bias control portions employed in the electrode assembly may be in a range of from about 1 to about 5. Although, described herein are the embodiments where the number of bias control portions is 5 and under, however, the number of bias control portions is not limited to 5. The number of bias control portions may depend on parameters, such as the flux rates. Other than the values of the flux rates, the number of control portions employed in an electrode assembly may also depend on the limitations posed by the fabrication techniques being employed to make the electrode assembly. In one embodiment, the electrode assembly may be fabricated using techniques such as low temperature soldering. Additionally, the number of bias control portions may also be chosen based upon the routing and available for the electrode assembly. For example, as will be described in detail below with regard to
In one embodiment, the central readout electrode may be in the shape of a circle, a square, a rectangle, a polygon, or a combination of two or more thereof. In one embodiment, the bias control portions are in a shape of a ring, an annular disc, an ellipse, a bar, a square, a rectangle, or a combination of two or more thereof. As will be described in detail below with regard to
Accordingly, the active area of the electrode assembly may be dynamically changed depending on the flux rate. The active area of the electrode assembly may be adjusted by controlling voltages of the bias control portions relative to the voltage of the central readout electrode. In certain embodiments, the active area of the electrode assembly may be same as the area of the central readout electrode at high flux rate values. Accordingly, the active area is centered about the readout electrode, thereby resulting in decreased charge sharing between adjacent pixels when the readout electrode is remote from the pixel boundary and enclosed by a bias control portion. In certain embodiments, the adjustable active area is indirectly proportional to an input flux rate above a predetermined threshold flux rate so as to keep the count rate constant above the predetermined threshold. In one embodiment, the electrode assembly may include an anode. In this embodiment, the active area of the anode may be controlled depending on the flux rate of incident electrons.
As noted above, the plurality of bias control portions may be coupled to a single/common bias logic to monitor the voltages of the individual bias control portions. The bias logic may in turn be coupled to a counter, which is configured to detect the quantity of the flux rate incident on the electrode assembly. The bias logic and the flux rate counter will be described in detail with regard to
In certain embodiments, the electrode assembly may further include readout electronics in operative association with the central readout electrode. The readout electronics is configured to produce electrical signal corresponding to the current of electrons generated within the adjustable active area of the electrode assembly. As opposed to the conventional methods, in the present technique, only one readout circuitry may be required for each pixel because the signals are centrally collected from the readout electrode as opposed to the conventional techniques of measuring the signals from the readout electrode as well as from each of the bias control portions. However, as described in detail below with regard to
Further, the detector 22 may employ a plurality of these electrode assemblies/pixels, which may be arranged in an array. The electrode pixels may be arranged in the form of one or more of a row, column, or grid to form an array. Further, in certain embodiments, two or more electrode pixels of a row may be electrically coupled to each other. In these embodiments, the two or more electrode pixels of the row may employ a common bias logic for controlling the voltage, thereby reducing the number of electronic components in the detector 22. In these embodiments, the two or more electrode pixels may be under common control. In other words, the two or more electrode pixels may be controlled regionally as opposed to individual control of each of the individual electrode pixels. The regional control may reduce the number of electronic components.
Referring now to
In certain embodiments, the voltages VB1, VB2 and VB3 of the bias control portions 72, 74 and 76, respectively may be adjusted relative to the voltage VR of the readout electrode 70 to control the active area of the electrode assembly 68 based on the input flux rate at detector 22 (see
At low flux rates in a range of from about 0 Mcps to about 30 Mcps, the voltages VB1, VB2, VB3 of the bias control portions 72, 74, 76 may be maintained at a relatively low voltage as compared to the voltage VR of the read out electrode 70. In this embodiment, the active area of the electrode assembly 68 may be the entire area A1 78 of the electrode assembly 68. In this embodiment where the electrode assembly 68 includes an anode, the incident electrons may be focused over the entire area A1 78 of the electrode assembly 68. The difference in the voltage VR of the readout electrode 70 and those of the bias control portions 72, 74, 76 (VB1, VB2, VB3) may be in a range of from about 30 volts to about 100 volts to have the area 78 of the electrode assembly 68 acts as an active area.
Subsequently, as the incident flux rate increases the area of the electrode assembly 68 may be reduced. For example, in one embodiment, when the incident flux rate on the electrode assembly 68 is in a range of from about 30 Mcps to about 100 Mcps, the area of the electrode assembly 68 may be reduced to area A2 80, thereby making the area lying within the bias control portion 74 as the active area. In one embodiment, the area of the electrode assembly 68 may be reduced to A2 80 by maintaining the voltage VB1 of the bias control portion 72 about the same as the voltage VR of the readout electrode 70.
As the incident flux increases further in a range of from about 100 Mcps to about 300 Mcps, the active area of the electrode assembly 68 may be further reduced to A3 82. In this embodiment, the collection area for the incident flux rate may be confined to the area lying within the bias control portion 76. The voltage VB2 of the bias control portion 74 may be maintained about the same as the voltage VR of the readout electrode 70, thereby making the active area as the area confined within the bias control portion 76.
Further, at even higher flux rates in a range of from about 300 Mcps to about 1000 Mcps, the active area of the electrode assembly 68 may be further decreased. In this embodiment, the voltage VB3 of the bias control portion 76 may be maintained about the same as the voltage VR of the readout electrode 70, thereby making the active area as the area A4 84 confined within the central readout electrode 70. It should be appreciated by those skilled in the art that material availability generally limits the flux rates experienced by the electrode assembly, such as the electrode assembly 68. However, the electrode assembly 68 may be able to experience higher flux rates with the advancement in the materials being employed in the electrode assembly 68.
Turning now to
Further, the bias logic 86 may be in operative associated with a flux rate counter 100, which may serve as an input for the bias logic as indicated by arrow 102.
The flux rate counter 100 may detect the value of the incident flux rate. This information about the flux rate may then flow down from the flux rate counter 100 to the bias logic 86, where it is fed as an input. Depending on the inputted value of the flux rate from the flux rate counter 100, the voltages of the active area of the electrode assembly 68 is then adjusted by controlling the voltages VB1, VB2 and VB3 of the bias control portions 72, 74 and 76. As describe above with regard to
In an exemplary embodiment, at low flux rate of about 0 Mcps to about 30 Mcps, the active area of the electrode assembly 68 may be equivalent to the entire area of the electrode assembly including the central readout electrode 70 and the bias control portions 72, 74 and 76. In this embodiment, the central readout electrode may be maintained at VR=0 volts, the voltages of the control portions may be at a relatively lower values as compared to the voltage of the central readout electrode 70. For example, the voltage VB1=−50 volts, VB2=−40 volts, and VB3=−30 volts. At higher flux rates, the active area of the electrode assembly 68 may be reduced to the area covered within the bias control portion 74. In this embodiment, the voltages may be VR=0 volts, VB1=0 volts, VB2=−40 volts, and VB3=−30 volts. As the flux rate further increases, maintaining the voltage of the bias control portion 74 same as that of the central readout electrode 70 may further reduce the active area of the electrode assembly 68. In this embodiment, the voltages of the central readout electrode and the bias control portions may be VR=0 volts, VB1=0 volts, VB2=0 volts, and VB3=−30 volts. In this embodiment, the active area may be reduced to the area lying within the bias control portion 76. At even higher flux rates of about 100 Mcps and above, the active area of the electrode assembly 68 may be restricted to the area of the central readout electrode 70. In this embodiment, the voltages of all the three bias control portions 72, 74 and 76 may be maintained at same value as the voltage of the central readout electrode 70. In one embodiment, the voltages may be VR=0 volts, VB1=0 volts, VB2=0 volts, and VB3=0 volts.
In certain embodiments, the flux rate counter 100 may be located within an application specific integrated circuit (ASIC). In these embodiments, the ASIC may either be disposed directly under the detector 22 (see
The electronic connections 92, 94 and 96 may include lead, wires, and the like. Further, the electronic connections 92, 94, 96 and the connection 98 from the central readout electrode 70 to the readout electronics 88 may be formed by low temperature soldering, for example.
Referring now to
In the illustrated embodiment, the readout electronics 106 from the bias control portions 72, 74 and 76 may be coupled to a bias logic 114 to control the voltages of the bias control portions 72, 74 and 76 to adjust the active area of the electrode assembly 68 as described above with regard to
Whereas
Turning now to
Further, different rows 124 may be configured to receive different thresholds of flux rates. In an exemplary embodiment, the rows 124 in the centre of the array 120 may be configured to receive lower flux rate as compared to the rows 124 disposed on the outside of the array 120. In this embodiment, the active area of the electrode pixels 122 of the rows 124 disposed in the center of the array 120 may be maintained greater than the active area of the electrode pixels 122 of the rows 124 disposed on the outside of the array 120 by controlling the voltages of the bias control portion 128 of the electrode pixels 122 relative to the voltages of the central readout electrode 126.
In an alternate embodiment of
Referring now to
Referring now to
While only certain features of the invention have been illustrated and described herein, many modifications and changes will occur to those skilled in the art. It is, therefore, to be understood that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.