1. Field of the Invention
The present invention relates to a method for modifying wettability of a surface of an inorganic material. More specifically, the invention relates to a method for modifying wettability of a surface of an inorganic material by an X-ray irradiation to the surface of the inorganic material.
2. Background of the Related Art
Controlling and modifying the wettability on solid surface are important in many industrial applications. In particular the dynamic tuning of the wettability to superhydrophobicity (contact angle (CA)>150°) or superhydrophilicity (CA<10°) by external stimuli is a subject of keen interest because of its potential applications to many intelligent devices such as biosensors, microfluidic devices, and intelligent membranes.
Various external stimuli such as pH, light irradiation, electric field, and temperature have been reported for dynamic tuning of wettability. Among them, light irradiation as remote stimulus is especially attractive because of individually addressable switching, remote controllability, and easy selectivity of wavelength.
Owing to their good chemical and mechanical stabilities, inorganic materials can be applied, if their wettability triggered by UV/visible irradiation, to a variety of applications such as Si-based μ-TAS (micro-total-analytical system), Al2O3-modified microcantilevers (MCLs), and smart windows. However smooth surfaces of inorganic materials except for ZnO, TiO2, and WO3 usually show limited variation of wettability by UV/visible irradiation. Nanostructures with rough surfaces are, therefore, introduced to enhance the wettability variation.
However the fabrication of nanostructures is often accompanied by complex processes and shows poor reproducibility. Furthermore it is not easy to fabricate nanostructures on complex structures. A challenging demand is, therefore, to find a new light irradiation that enables to universally improve the wettability variation on smooth surfaces of inorganic materials.
Accordingly, the present invention has been made in an effort to solve the problems occurring in the prior art. It is an object of the invention to provide a method for modifying wettability of a surface of an inorganic material by an X-ray irradiation to the surface of the inorganic material.
To achieve the above object, according to an aspect of the invention, there is provided a method for modifying wettability of a surface of an inorganic material, the method comprising the steps of: preparing an inorganic material with a surface; and charging the surface of the inorganic material with surface charges obtained from photoelectron-emission by an X-ray irradiation to the surface of the inorganic material.
Preferably, the method further comprises discharging the surface charges from the surface so as to recover the wettability of the surface of the inorganic material after the X-ray irradiation.
Preferably, discharging the surface charges is performed by immersion of the surface of the inorganic material in deionized water.
Preferably, the X-ray irradiation is a synchrotron hard X-ray irradiation in the range of 10 to 60 keV.
Preferably, the X-ray irradiation induces surface potential V(t) given by the following relation:
V(t)≈V(∞)[1−exp(−t/τ)] (1)
where t is an X-ray irradiation time, V(∞) is an infinity potential and τ is a time constant.
Preferably, the X-ray irradiation induces wetting behavior given by the following equation:
where, θ and θo are wetted and static contact angles, respectively, t is an X-ray irradiation time, ∈i and ∈o are dielectric permittivities of the inorganic material and vacuum, respectively, d is the thickness of the inorganic material, and γlv is initial value of the liquid-vapor surface tension before X-ray irradiation.
Preferably, a relation between the wettability and the X-ray irradiation is given by the following:
cos θ∝[1−exp(−t/τ)]2 (3)
where θ is a wetted contact angle, t is an X-ray irradiation time, and τ is a time constant.
Preferably, the inorganic material is selected from the group consisting of oxides, sulphides, nitrides, semiconductors, and steels.
Preferably, the inorganic material is selected from the group consisting of ZnO, p-Si, Sapphire, SrTiO3, TiN, ZnS, and stainless steel.
Preferably, a transition of the wettability is reversible.
In this invention, we first report that hard X-ray irradiation induces wettability modifications in a variety of inorganic materials. We observe that the smooth surfaces of all tested inorganic materials change to superhydrophilic wettability by X-ray irradiation. We reveal that the superhydrophilic transition is due to the accumulation of positive surface charges on the surface by photoelectron-emission. The wettability quickly recovers to the initial state within several minutes of immersion in deionized water by discharging mechanism. The X-ray induced wettability modification is reversible.
A variety of inorganic materials such as ZnO, ZnS, p-Si, Al2O3, SrTiO3, TiN, stainless steel etc. have been tested in this invention. Synchrotron hard X-ray (10-60 keV) in Pohang Light Source (PLS) 7B2 beamline was used to induce the wettability modification. The wettability was evaluated from the contact angle of water droplet. Electrostatic force microscopy (EFM) (XE-100, USA) was used to measure the surface potential.
The X-ray induced superhydrophilicity of inorganic materials is attributed to surface charging during the irradiation. In general positive surface charges are accumulated on X-ray irradiated surface by photoelectron-emission. The surface potential induced by X-ray irradiation, V(t), shows an exponential evolution with irradiation time, as follows:
V(t)≈V(∞)[1−exp(−t/τ)] (1)
where t is the X-ray irradiation time, V(∞) is the infinity potential, and τ is the time constant. The wetting behavior induced by surface charging is given by the well-known Young-Lippmann equation:
where θ and θo are the wetted and static contact angles, respectively, t is the X-ray irradiation time, ∈i and ∈o are the dielectric permittivities of the inorganic material and vacuum, respectively, d is the thickness of the inorganic material, and γlv is the initial value of the liquid-vapor surface tension before X-ray irradiation. From Eqs. (1) and (2), we derive a simple relation between the wettability and X-ray irradiation time as follows:
cos θ∝[1−exp(−t/τ)]2 (3)
where θ is the wetted contact angle, t is the X-ray irradiation time, and τ is the time constant.
This relation shows that the wettability exponentially changes with the irradiation time. Indeed, as shown in the contact angle (CA) behavior on ZnO surface [
The recovery rate at ambient air condition is relatively slow, as shown in
The surface charging and discharging in X-ray induced modification are confirmed through a surface potential measurement by dc-EFM.
The wettability transition is reversible. We irradiated ZnO surface with X-ray for 20 min and immersed it in ambient condition for 80 min repeatedly. As shown in
In conclusion, the present invention can provide a wettability modification by hard X-ray irradiation to a variety of inorganic materials. According to the present invention, the surfaces of all the tested inorganic materials show X-ray induced superhydrophilicity. The transition that follows an exponential evolution with the irradiation time is due to the accumulation of positive surface charges on the surface. The wettability quickly recovers to the initial state within several minutes of immersion in deionized water by discharging mechanism. The wettability transition is reversible and rapid. The present invention suggest that X-ray irradiation as a remote stimulus might be a useful wettability modification protocol for a variety of applications such as microfluidic device, smart windows, etc.
Number | Date | Country | Kind |
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10-2008-0119055 | Nov 2008 | KR | national |
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20100128847 A1 | May 2010 | US |