Zinc nitride compound and method for producing same

Abstract

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Description

TECHNICAL FIELD

The present invention relates to a zinc nitride compound and a method for producing the same.

BACKGROUND ART

GaN is widely used in LED light sources. However, GaN has a wide band gap and therefore cannot emit light in the visible range by itself. InN has too narrow a band gap, due to which it cannot emit light in the visible range. Ga is a high-cost element, and In is a scarce element. Various zinc nitride compounds have been proposed; however, for example, ZnSnN₂ is difficult to produce in the form of a p-type semiconductor, and Ca₂ZnN₂ is an indirect band gap semiconductor. The problem with these zinc nitride compounds is that, for example, they are unsuitable for use in light-emitting devices or high-efficiency solar cells (Non Patent Literature 1).

CITATION LIST

Non Patent Literature

Non Patent Literature 1; J. Solid State Chem. 88, 528-533 (1990)

SUMMARY OF INVENTION

Technical Problem

It is an object of the present invention to solve the above problem and provide a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors.

Solution to Problem

The present disclosure provides the following inventions to solve the above problem.

(1) A zinc nitride compound represented by the chemical formula CaZn₂N₂.

(2) A zinc nitride compound represented by the chemical formula X¹₂ZnN₂ wherein X¹ is Be or Mg.

(3) A zinc nitride compound represented by the chemical formula Zn₃LaN₃.

(4) A zinc nitride compound represented by the chemical formula ZnTiN₂.

(5) A zinc nitride compound represented by the chemical formula ZnX²N₂ wherein X² is Zr or Hf.

(6) A zinc nitride compound represented by the chemical formula Zn₂X³N₃ wherein X³ is V, Nb, or Ta.

(7) A zinc nitride compound represented by the chemical formula Zn₃WN₄.

(8) The zinc nitride compound according to any one of (1) to (7), being a compound semiconductor.

(9) The zinc nitride compound according to (1) or (3), being a direct band gap compound semiconductor.

(10) A compound semiconductor represented by the chemical formula CaM¹_2xZn_2(1-x)N₂ wherein M¹ is Mg or Cd and 0≤x≤1 or M²_xxCa_1-xZn₂N₂ wherein M² is Sr or Ba and 0≤x≤1, the compound semiconductor having a band gap of 0.4 eV to 3.2 eV.

(11) An electronic device including an active layer including the compound semiconductor according to any one of (8) to (10).

(12) The electronic device according to (11), wherein the electronic device emits light in the visible range under current injection.

(13) The electronic device according to (11), wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

(14) A method for producing the zinc nitride compound according to any one of (1) to (7), including synthesizing the zinc nitride compound at a high pressure of 1 GPa or more.

Advantageous Effects of Invention

The zinc nitride compound of the present invention can be provided as a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A and FIG. 1B show the basic electronic properties of zinc nitride compounds according to the present invention.

FIG. 2A shows the crystal structure of the zinc nitride compound represented by the chemical formula CaZn₂N₂.

FIG. 2B shows the calculated phase diagram of the Ca—Zn—N system.

FIG. 2C shows the band structure (conduction band and valence band) of the zinc nitride compound represented by CaZn₂N₂.

FIG. 2D shows the phase diagram of the Ca—Zn—N system in the chemical potential space.

FIGS. 3A-3E show the crystal structures of typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn₂N₂.

FIGS. 4A-4G show the calculated phase diagrams of the systems such as the Mg—Zn—N system for the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn₂N₂.

FIGS. 5A-5G show the band structures (conduction bands and valence bands) of the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn₂N₂.

FIG. 6A and FIG. 6B show X-ray diffraction patterns of synthesis products obtained in Example 1 and Comparative Example 1.

FIGS. 7A-7C show absorption spectra of the synthesis products obtained in Example 1 and Comparative Example 1.

FIG. 8 shows X-ray diffraction patterns of a synthesis product obtained in Example 2.

FIG. 9A and FIG. 9B show photoluminescence spectra of the synthesis product obtained in Example 2.

FIG. 10 shows X-ray diffraction patterns of a purified powder product obtained in Example 2.

DESCRIPTION OF EMBODIMENTS

The zinc nitride compound of the present invention can be represented by any one of the following chemical formulae.

A) A zinc nitride compound represented by the chemical formula CaZn₂N₂.

B) A zinc nitride compound represented by the chemical formula X¹₂ZnN₂ wherein X¹ is Be or Mg.

C) A zinc nitride compound represented by the chemical formula Zn₃LaN₃.

D) A zinc nitride compound represented by the chemical formula ZnTiN₂.

E) A zinc nitride compound represented by the chemical formula ZnX²N₂ wherein X² is Zr or Hf.

F) A zinc nitride compound represented by the chemical formula Zn₂X³N₃ wherein X³ is V, Nb, or Ta.

G) A zinc nitride compound represented by the chemical formula Zn₃WN₄.

The zinc nitride compounds A) to G) according to the present invention are novel compounds which are not included in Inorganic Crystal Structure Database (ICSD). The basic electronic properties of the zinc nitride compounds A) to G) according to the present invention are shown in FIG. 1A-B. FIG. 1A shows the band gaps (● represents a direct band gap, while ◯ represents an indirect band gap), and FIG. 1B shows the effective masses of holes and electrons. The zinc nitride compounds according to the present invention are compound semiconductors. In particular, the zinc nitride compound A) or C) according to the present invention which is represented by the chemical formula CaZn₂N₂ or Zn₃LaN₃ is a direct band gap compound semiconductor and suitable for use, for example, in light-emitting devices and thin-film solar cells.

The space groups to which the zinc nitride compounds according to the present invention belong are as follows.

The zinc nitride compound A) belongs to the space group P·3m1.

The zinc nitride compound B) belongs to the space group I4/mmm.

The zinc nitride compound C) belongs to the space group P6₃/m.

The zinc nitride compound D) belongs to the space group Pna2₁.

The zinc nitride compound E) belongs to the space group P3m1.

The zinc nitride compound F) belongs to the space group Cmc2₁.

The zinc nitride compound G) belongs to the space group Pmn2₁.

Hereinafter, the zinc nitride compound A) represented by the chemical formula CaZn₂N₂, which is suitable as a direct band gap compound semiconductor, will be described as a representative of the zinc nitride compounds of the present invention. Understanding of the other zinc nitride compounds denoted by B) to G) can also be gained from the entire contents of the detailed description.

In FIG. 2A-D, FIG. 2A shows the crystal structure of the zinc nitride compound A) represented by the chemical formula CaZn₂N₂, FIG. 2B shows the calculated phase diagram of the Ca—Zn—N system, FIG. 2C shows the band structure (conduction band and valence band) of the zinc nitride compound represented by CaZn₂N₂, and FIG. 2D shows the phase diagram of the Ca—Zn—N system in the chemical potential space. As seen from FIG. 2D, CaZn₂N₂ is stable at a high nitrogen chemical potential, namely at a high nitrogen partial pressure.

The zinc nitride compound A) represented by the chemical formula CaZn₂N₂ has a band gap of 1.9 eV. The band gap can be controlled by incorporation of Mg, Sr, Ba, or Cd, which results in a compound semiconductor represented by the chemical formula CaM¹_2xZn_2(1-x)N₂ wherein M¹ is Mg or Cd and 0≤x≤1 or M²_xCa_1-xZn₂N₂ wherein M² is Sr or Ba and 0≤x≤1 and having a band gap of 0.4 eV to 3.2 eV. CaZn₂N₂ can be an n-type semiconductor even when undoped, since nitrogen holes serving as shallow donors are likely to be generated in CaZn₂N₂. However, it is preferable to form an n-type semiconductor by doping into CaZn₂N₂. Furthermore, for example, a higher nitrogen partial pressure reduces carrier compensation by nitrogen holes, thus allowing the formation of a p-type semiconductor by doping into CaZn₂N₂.

The zinc nitride compound A) represented by the chemical formula CaZn₂N₂ is preferably synthesized at a high pressure of 1 GPa or more. In this case, the starting compounds, preferably Ca₃N₂ and 2Zn₃N₂, are introduced into a high-pressure synthesis apparatus and reacted typically at 800 to 1500° C. and 1 to 10 GPa for about 30 minutes to 5 hours.

The resulting high-pressure synthesis product can be purified by removing zinc from the product. It is preferable to put a powder of the resulting high-pressure synthesis product and I₂, for example, into a glass vessel and place the glass vessel in an atmosphere of an inert gas such as argon or nitrogen at about 15 to 30° C., preferably at room temperature, for about 5 to 10 minutes, thereby converting zinc to zinc iodide (ZnI₂). The zinc iodide produced is then dissolved in a solvent such as dimethyl ether, and the solution is removed. The purpose of using an inert atmosphere is to inhibit oxidation of Zn²⁺ and I⁻.

The zinc nitride compound of the present invention can be obtained not only by the above high-pressure synthesis but also by depositing the compound as a thin film on a substrate using a physical vapor deposition process such as sputtering, pulsed laser deposition, or vacuum deposition or a chemical vapor deposition process such as organometallic chemical vapor deposition. The substrate can be selected as appropriate depending on the intended purpose and, for example, an oxide substrate may be used.

CaZn₂N₂ is particularly useful in that it is composed of elements abundant on the earth, it has a direct band gap, and its charge carriers have a small effective mass (the effective mass of electrons is 0.17 m₀, and the effective mass of holes is 0.91 m₀). The direct band gap of 1.9 eV of CaZn₂N₂ corresponds to the red region of visible light, and thus CaZn₂N₂ can be expected to show a high theoretical conversion efficiency when used as a light absorbing layer of a solar cell. An electronic device having an active layer made of CaZn₂N₂ is useful as an electronic device (light-emitting device) that emits light in the visible range under current injection or as an electronic device (solar cell or light sensor) that generates a photovoltage or a photocurrent by absorbing visible light.

FIGS. 3A to 3E show the crystal structures of the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn₂N₂ just as FIG. 2A shows the crystal structure of the zinc nitride compound A).

FIGS. 4A to 4G show the calculated phase diagrams of the systems such as the Mg—Zn—N system for the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn₂N₂ just as FIG. 2B shows the calculated phase diagram for the zinc nitride compound A).

FIGS. 5A to 5G show the band structures (conduction bands and valence bands) of the typical zinc nitride compounds of the present invention other than the zinc nitride compound A) represented by the chemical formula CaZn₂N₂ just as FIG. 2C shows the band structure of the zinc nitride compound A).

INDUSTRIAL APPLICABILITY

The present invention can provide a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors.

EXAMPLES

Hereinafter, the present invention will be described in more detail with Examples.

Example 1

Synthesis of Zinc Nitride Compound Represented by CaZn₂N₂

Starting compounds, Ca₃N₂ and Zn₃N₂ mixed in a molar ratio Ca₃N₂:Zn₃N₂ of 1:2, were introduced into a high-pressure synthesis apparatus, which was maintained at 2.5 GPa and 1100° C. for 1 hour. The high-pressure synthesis apparatus used is a belt-type high-pressure synthesis apparatus which has a high-pressure cell as a sample holder, whose pressure control range is from 2 to 5.5 GPa, and whose temperature control range is from room temperature to 1600° C.

X-ray diffraction patterns of the resulting high-pressure synthesis product are shown in FIG. 6A. About 69 wt % of the product consisted of CaZn₂N₂, and the rest consisted of Zn. As for the lattice parameters of CaZn₂N₂, the lattice parameters a and c were respectively 3.463150(44) Å and 6.01055(11) Å which differ by 0.3% from the theoretical lattice parameters a and c of 3.454 Å and 5.990 Å.

Absorption spectra of CaZn₂N₂ as obtained through diffuse reflectance spectroscopy and calculation using the Kubelka-Munk equation are shown in FIGS. 7A to 7C, together with absorption spectra of Ca₂ZnN₂ of Comparative Example 1. It is seen that the absorption of CaZn₂N₂ sharply rises. CaZn₂N₂ had a direct band gap of 1.9 eV (calculated value=1.83 eV).

X-ray diffraction patterns of the resulting reaction product are shown in FIG. 6B. The resulting product was Ca₂ZnN₂. As for the lattice parameters of Ca₂ZnN₂, the lattice parameter a was 3.583646(65) Å which differs by 0.2% from the theoretical lattice parameter a of 3.575 Å, and the lattice parameter c was 12.663346(26) Å which differs by 0.4% from the theoretical lattice parameter c of 12.607 Å.

Absorption spectra of Ca₂ZnN₂ as obtained through diffuse reflectance spectroscopy and calculation using the Kubelka-Munk equation are shown in FIGS. 7A to 7C. Ca₂ZnN₂ had an indirect band gap of 1.6 eV (calculated value=1.65 eV) and a direct band gap of 1.9 eV (calculated value=1.92 eV).

When synthesis was attempted in the same manner as in Comparative Example 1 except for mixing the starting materials in the ratio used in Example 1, CaZn₂N₂ of the present invention was not obtained.

Example 2

Synthesis of Zinc Nitride Compound Represented by CaZn₂N₂

Starting compounds, Ca₃N₂ and Zn₃N₂ mixed in a molar ratio Ca₃N₂:Zn₃N₂ of 1:2, were introduced into a high-pressure cell and subjected to high-pressure synthesis in which a pressure of 5.0 GPa was applied at 1200° C. for 1 hour. The high-pressure synthesis apparatus used is a belt-type high-pressure synthesis apparatus which has a high-pressure cell as a sample holder, whose pressure control range is from 2 to 5.5 GPa, and whose temperature control range is from room temperature to 1600° C.

X-ray diffraction patterns of the resulting high-pressure synthesis product are shown in FIG. 8. About 80 wt % of the product consisted of CaZn₂N₂, and the rest consisted of Zn etc. As for the lattice parameters of CaZn₂N₂, the lattice parameters a and c were respectively 3.46380(11) Å and 6.00969(30) Å which differ by 0.3% from the theoretical lattice parameters a and c of 3.454 Å and 5.990 Å.

Light emission, in particular photoluminescence, from CaZn₂N₂ obtained as the high-pressure synthesis product was examined through photon excitation induced using a third-harmonic Nd:YAG pulsed laser (wavelength: 355 nm, energy density: up to 7 mJ/cm²). Red photoluminescence was clearly observed by visual inspection at 10 K. The results are shown in FIG. 9A-B. FIG. 9A shows photoluminescence spectra obtained at 10 K, 100 K, 200 K, and 300 K, and FIG. 9B shows the temperature dependence of the spectral peak position.

(Purification of CaZn₂N₂)

A powder of the obtained high-pressure synthesis product (including CaZn₂N₂ and Zn etc.) and I₂ were put into a glass vessel, which was placed in an argon atmosphere at room temperature for about 5 minutes to convert zinc into zinc iodide. The zinc iodide produced was then dissolved in dimethyl ether, and the solution was removed. CaZn₂N₂ accounted for about 87.3 wt % of the resulting powder, and zinc etc. accounted for about 12.7 wt % of the powder. X-ray diffraction patterns of the purified powder product are shown in FIG. 10. A pellet for use as a pulsed laser deposition target was able to be formed from about 1 g of the purified powder product using a cold isotropic press (CIP) machine.

Claims

1. A zinc nitride compound represented by the chemical formula X12ZnN2 wherein X1 is Be or Mg.

2. A zinc nitride compound represented by the chemical formula ZnTiN2.

3. A zinc nitride compound represented by the chemical formula Zn2X3N3 wherein X3 is V, Nb, or Ta.

4. A zinc nitride compound represented by the chemical formula Zn3WN4.

5. The zinc nitride compound according to claim 1, being a compound semiconductor.

6. The zinc nitride compound according to claim 2, being a compound semiconductor.

7. The zinc nitride compound according to claim 3, being a compound semiconductor.

8. The zinc nitride compound according to claim 4, being a compound semiconductor.

9. An electronic device comprising an active layer comprising the compound semiconductor according to claim 5.

10. An electronic device comprising an active layer comprising the compound semiconductor according to claim 6.

11. An electronic device comprising an active layer comprising the compound semiconductor according to claim 7.

12. An electronic device comprising an active layer comprising the compound semiconductor according to claim 8.

13. The electronic device according to claim 9, wherein the electronic device emits light in the visible range under current injection.

14. The electronic device according to claim 10, wherein the electronic device emits light in the visible range under current injection.

15. The electronic device according to claim 11, wherein the electronic device emits light in the visible range under current injection.

16. The electronic device according to claim 12, wherein the electronic device emits light in the visible range under current injection.

17. The electronic device according to claim 9, wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

18. The electronic device according to claim 10, wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

19. The electronic device according to claim 11, wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.

20. The electronic device according to claim 12 wherein the electronic device generates a photovoltage or a photocurrent by absorbing visible light.