4D-S Pty. Ltd.

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PERTH, AU

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Patents Grantslast 30 patents

Information Patent Grant
Resistive memory device having a conductive barrier layer
- Patent number 10,833,262
- Issue date Nov 10, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having ohmic contacts
- Patent number 10,734,576
- Issue date Aug 4, 2020
- 4D-S, Ltd.
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having a retention layer
- Patent number 10,381,558
- Issue date Aug 13, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having a template layer
- Patent number 10,319,907
- Issue date Jun 11, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction oxide non-volatile memory device
- Patent number 10,003,020
- Issue date Jun 19, 2018
- 4D-S Pty, Ltd
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for fabricating self-aligned resistive/magnetic...
- Patent number 9,711,714
- Issue date Jul 18, 2017
- 4D-S Ltd.
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide heterojunction memory devices and methods...
- Patent number 9,634,247
- Issue date Apr 25, 2017
- 4D-S Ltd.
- Dongmin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction oxide non-volatile memory device
- Patent number 9,520,559
- Issue date Dec 13, 2016
- 4D-S Pty, Ltd
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Heterojunction oxide non-volatile memory devices
- Patent number 9,293,201
- Issue date Mar 22, 2016
- 4D-S Pty, Ltd
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and circuits for bulk erase of resistive memory
- Patent number 9,058,876
- Issue date Jun 16, 2015
- 4D-S, Ltd.
- Lee Cleveland
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for fabricating self-aligned memory cell
- Patent number 8,884,401
- Issue date Nov 11, 2014
- 4D-S Pty, Ltd
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for utilizing Perovskite material for charge stor...
- Patent number 8,709,891
- Issue date Apr 29, 2014
- 4D-S Ltd.
- Zhida Lan
- G11 - INFORMATION STORAGE
Information Patent Grant
Heterojunction oxide non-volatile memory device
- Patent number 8,698,120
- Issue date Apr 15, 2014
- 4D-S Pty Ltd.
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for fabricating self-aligned memory cell
- Patent number 8,466,032
- Issue date Jun 18, 2013
- 4D-S, Ltd.
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual hexagonal shaped plasma source
- Patent number 8,454,810
- Issue date Jun 4, 2013
- 4D-S Pty Ltd.
- Makoto Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Systems and methods for fabricating self-aligned memory cell
- Patent number 8,395,199
- Issue date Mar 12, 2013
- 4D-S Pty Ltd.
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction oxide non-volatile memory device
- Patent number 8,378,345
- Issue date Feb 19, 2013
- 4D-S Pty, Ltd
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for fabricating self-aligned memory cell
- Patent number 8,367,513
- Issue date Feb 5, 2013
- 4D-S Pty Ltd.
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for magnetron deposition
- Patent number 8,308,915
- Issue date Nov 13, 2012
- 4D-S Pty Ltd.
- Makoto Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Voltage excited piezoelectric resistance memory cell system
- Patent number 7,985,960
- Issue date Jul 26, 2011
- 4D-S Pty Ltd.
- Gilbert Springer
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for fabricating self-aligned memory cell
- Patent number 7,932,548
- Issue date Apr 26, 2011
- 4D-S Pty Ltd.
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for plasma etching
- Patent number 7,425,504
- Issue date Sep 16, 2008
- 4D-S Pty Ltd.
- Makoto Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20210050516
- Publication date Feb 18, 2021
- 4D-S, LTD
- Seshubabu Desu
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS
- Publication number 20190288197
- Publication date Sep 19, 2019
- 4D-S, LTD
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
- Publication number 20190288196
- Publication date Sep 19, 2019
- 4D-S, Ltd.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC...
- Publication number 20170244025
- Publication date Aug 24, 2017
- 4D-S, LTD
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE
- Publication number 20160118581
- Publication date Apr 28, 2016
- 4D-S, PTY, LTD
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND CIRCUITS FOR BULK ERASE OF RESISTIVE MEMORY
- Publication number 20140376299
- Publication date Dec 25, 2014
- 4D-S, LTD
- Lee Cleveland
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY METAL OXIDE HETEROJUNCTION MEMORY DEVICES AND METHODS...
- Publication number 20140206138
- Publication date Jul 24, 2014
- 4DS, Inc.
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICES
- Publication number 20140169070
- Publication date Jun 19, 2014
- 4DS, Inc.
- Dongmin Chen
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY METAL OXIDE HETEROJUNCTION MEMORY DEVICES AND METHODS...
- Publication number 20140117298
- Publication date May 1, 2014
- 4DS, Inc.
- Dongmin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STOR...
- Publication number 20130279236
- Publication date Oct 24, 2013
- 4D-S, LTD
- Zhida Lan
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL
- Publication number 20130248812
- Publication date Sep 26, 2013
- 4D-S PTY, LTD
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Hexagonal Shaped Plasma Source
- Publication number 20130233701
- Publication date Sep 12, 2013
- 4D-S, LTD
- Makoto Nagashima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC...
- Publication number 20130224888
- Publication date Aug 29, 2013
- 4D-S PTY, LTD
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL
- Publication number 20130109150
- Publication date May 2, 2013
- 4D-S PTY, LTD
- Makoto Nagashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE
- Publication number 20120205611
- Publication date Aug 16, 2012
- 4D-S PTY, LTD
- Dongmin CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE
- Publication number 20120199804
- Publication date Aug 9, 2012
- 4D-S PTY, LTD
- Dongmin CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STOR...
- Publication number 20120195097
- Publication date Aug 2, 2012
- 4D-S Pty. Ltd.
- Zhida LAN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STOR...
- Publication number 20120195098
- Publication date Aug 2, 2012
- 4D-S PTY. LTD.
- Zhida LAN
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL
- Publication number 20120122290
- Publication date May 17, 2012
- 4D-S Pty. Ltd.
- Makoto NAGASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM
- Publication number 20100276655
- Publication date Nov 4, 2010
- 4D-S PTY. LTD.
- Gilbert Springer
- G11 - INFORMATION STORAGE
Information Patent Application
CONCENTRIC HOLLOW CATHODE MAGNETRON SPUTTER SOURCE
- Publication number 20090188790
- Publication date Jul 30, 2009
- 4D-S Pty. Ltd.
- DANIEL BRORS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Trademarklast 30 trademarks

Information Trademark
85354179 - MOHJO
- Serial number 85354179
- Filing date Jun 23, 2011
- 4DS, Inc.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

4D-S Pty. Ltd.

Organization

Patents Grantslast 30 patents

Resistive memory device having a conductive barrier layer

Resistive memory device having ohmic contacts

Resistive memory device having a retention layer

Resistive memory device having a template layer

Heterojunction oxide non-volatile memory device

Systems and methods for fabricating self-aligned resistive/magnetic...

Complementary metal oxide heterojunction memory devices and methods...

Heterojunction oxide non-volatile memory device

Heterojunction oxide non-volatile memory devices

Methods and circuits for bulk erase of resistive memory

Systems and methods for fabricating self-aligned memory cell

Method and system for utilizing Perovskite material for charge stor...

Heterojunction oxide non-volatile memory device

Systems and methods for fabricating self-aligned memory cell

Dual hexagonal shaped plasma source

Systems and methods for fabricating self-aligned memory cell

Heterojunction oxide non-volatile memory device

Systems and methods for fabricating self-aligned memory cell

Systems and methods for magnetron deposition

Voltage excited piezoelectric resistance memory cell system

Systems and methods for fabricating self-aligned memory cell

Systems and methods for plasma etching

Patents Applicationslast 30 patents

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

RESISTIVE MEMORY DEVICE HAVING OHMIC CONTACTS

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC...

HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE

METHODS AND CIRCUITS FOR BULK ERASE OF RESISTIVE MEMORY

COMPLEMENTARY METAL OXIDE HETEROJUNCTION MEMORY DEVICES AND METHODS...

HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICES

COMPLEMENTARY METAL OXIDE HETEROJUNCTION MEMORY DEVICES AND METHODS...

METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STOR...

SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL

Dual Hexagonal Shaped Plasma Source

SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC...

SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL

HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE

HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE

METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STOR...

METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STOR...

SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL

VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM

CONCENTRIC HOLLOW CATHODE MAGNETRON SPUTTER SOURCE

Trademarklast 30 trademarks

85354179 - MOHJO