AMMONO SP. z o.o.

Organization

Warsaw, PL

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Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor (HEMT) made of layers of Group XI...
- Patent number 8,754,449
- Issue date Jun 17, 2014
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for epitaxy and method of preparing the same
- Patent number 8,110,848
- Issue date Feb 7, 2012
- Ammono Sp. z o.o.
- Robert Dwilinski
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming light-emitting device using nitride bulk single c...
- Patent number 7,935,550
- Issue date May 3, 2011
- Ammono Sp. z o.o.
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of obtaining bulk single crystals by seeded growth
- Patent number 7,905,957
- Issue date Mar 15, 2011
- Ammono Sp. Z.O.O.
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of preparing light emitting device
- Patent number 7,871,843
- Issue date Jan 18, 2011
- Ammono Sp. z o.o.
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for obtaining bulk mono-crystalline gallium-containing nitride
- Patent number 7,811,380
- Issue date Oct 12, 2010
- Ammono Sp. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element structure using nitride bulk single crystal...
- Patent number 7,750,355
- Issue date Jul 6, 2010
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk monocrystalline gallium nitride
- Patent number 7,744,697
- Issue date Jun 29, 2010
- Nichia Corporation
- Robert Tomasz Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phosphor single crystal substrate and method for preparing the same...
- Patent number 7,589,358
- Issue date Sep 15, 2009
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gallium-containing nitride bulk single crystal on...
- Patent number 7,422,633
- Issue date Sep 9, 2008
- Ammono SP. ZO.O
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nitride mono-crystal including substrate for epitaxy
- Patent number 7,420,261
- Issue date Sep 2, 2008
- Ammono Sp. z o.o.
- Robert Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Template type substrate and a method of preparing the same
- Patent number 7,410,539
- Issue date Aug 12, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for epitaxy and method of preparing the same
- Patent number 7,387,677
- Issue date Jun 17, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and equipment for manufacturing aluminum nitride bulk single...
- Patent number 7,374,615
- Issue date May 20, 2008
- Ammono SP. ZO.O
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining of bulk monocrystalline gallium-containing ni...
- Patent number 7,364,619
- Issue date Apr 29, 2008
- Ammono SP. ZO.O
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for obtaining a bulk single crystal using supercritical a...
- Patent number 7,335,262
- Issue date Feb 26, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for obtaining bulk mono-crystalline gallium-containing nitride
- Patent number 7,314,517
- Issue date Jan 1, 2008
- Ammono Sp. Z.O.O.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor laser device and a method for improving its p...
- Patent number 7,315,559
- Issue date Jan 1, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for obtaining bulk monocrystalline gallium-co...
- Patent number 7,252,712
- Issue date Aug 7, 2007
- Ammono Sp. z o.o.
- Robert Tomasz Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for obtaining bulk monocrystalline gallium-co...
- Patent number 7,160,388
- Issue date Jan 9, 2007
- Nichia Corporation
- Robert Tomasz Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nitride mono-crystal including substrate for epitaxy
- Patent number 7,132,730
- Issue date Nov 7, 2006
- Ammono Sp. z.o.o.
- Robert Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor laser device and manufacturing method thereof
- Patent number 7,057,211
- Issue date Jun 6, 2006
- Ammono SP. ZO.O
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk monocrystalline gallium nitride
- Patent number 6,656,615
- Issue date Dec 2, 2003
- Nichia Corporation
- Robert Tomasz Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS

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Patents Applicationslast 30 patents

Information Patent Application
METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRID...
- Publication number 20100327292
- Publication date Dec 30, 2010
- AMMONO SP. z o.o.
- Robert Tomasz Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL...
- Publication number 20090315012
- Publication date Dec 24, 2009
- AMMONO, Sp. zo.o
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride Single Crystal Seeded Growth in Supercritical Ammonia with...
- Publication number 20080156254
- Publication date Jul 3, 2008
- AMMONO SP. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-Emitting Device Structure Using Nitride Bulk Single Crystal L...
- Publication number 20080108162
- Publication date May 8, 2008
- Ammono SP.ZO.O
- Robert DWILINSKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Phosphor single crystal substrate and method for preparing the same...
- Publication number 20060054076
- Publication date Mar 16, 2006
- AMMONO SP. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for obtaining bulk mono-crystalline gallium-containing nitride
- Publication number 20060037530
- Publication date Feb 23, 2006
- AMMONO SP. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for obtaining of bulk monocrystalline gallium-containing ni...
- Publication number 20060032428
- Publication date Feb 16, 2006
- AMMONO. Sp. z.o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH

AMMONO SP. z o.o.

Organization

Patents Grantslast 30 patents

High electron mobility transistor (HEMT) made of layers of Group XI...

Substrate for epitaxy and method of preparing the same

Method of forming light-emitting device using nitride bulk single c...

Method of obtaining bulk single crystals by seeded growth

Method of preparing light emitting device

Process for obtaining bulk mono-crystalline gallium-containing nitride

Light emitting element structure using nitride bulk single crystal...

Bulk monocrystalline gallium nitride

Phosphor single crystal substrate and method for preparing the same...

Method of forming gallium-containing nitride bulk single crystal on...

Bulk nitride mono-crystal including substrate for epitaxy

Template type substrate and a method of preparing the same

Substrate for epitaxy and method of preparing the same

Method and equipment for manufacturing aluminum nitride bulk single...

Process for obtaining of bulk monocrystalline gallium-containing ni...

Apparatus for obtaining a bulk single crystal using supercritical a...

Process for obtaining bulk mono-crystalline gallium-containing nitride

Nitride semiconductor laser device and a method for improving its p...

Process and apparatus for obtaining bulk monocrystalline gallium-co...

Process and apparatus for obtaining bulk monocrystalline gallium-co...

Bulk nitride mono-crystal including substrate for epitaxy

Nitride semiconductor laser device and manufacturing method thereof

Bulk monocrystalline gallium nitride

Patents Applicationslast 30 patents

METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRID...

LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL...

Nitride Single Crystal Seeded Growth in Supercritical Ammonia with...

Light-Emitting Device Structure Using Nitride Bulk Single Crystal L...

Phosphor single crystal substrate and method for preparing the same...

Process for obtaining bulk mono-crystalline gallium-containing nitride

Process for obtaining of bulk monocrystalline gallium-containing ni...