Avogy, Inc.

Organization

San Jose, CA, US

Organizations

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
AC-DC converter with adjustable output
- Patent number 9,531,256
- Issue date Dec 27, 2016
- Avogy, Inc.
- Hemal N. Shah
- G05 - CONTROLLING REGULATING
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,525,039
- Issue date Dec 20, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN ohmic source contacts for vertical power devices
- Patent number 9,508,838
- Issue date Nov 29, 2016
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for planar regrowth in GaN electronic devices
- Patent number 9,502,544
- Issue date Nov 22, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a GaN P-i-N diode using implantation
- Patent number 9,484,470
- Issue date Nov 1, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral GaN JFET with vertical drift region
- Patent number 9,472,684
- Issue date Oct 18, 2016
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power supply
- Patent number D762573
- Issue date Aug 2, 2016
- Avogy, Inc.
- Yves Béhar
- D13 - Equipment for production, distribution, or transformation of energy
Information Patent Grant
Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...
- Patent number 9,397,186
- Issue date Jul 19, 2016
- Avogy, Inc.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical GaN JFET with low gate-drain capacitance and high gate-sou...
- Patent number 9,391,179
- Issue date Jul 12, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AC-DC converter for wide range output voltage and high switching fr...
- Patent number 9,369,059
- Issue date Jun 14, 2016
- Avogy, Inc.
- Sitthipong Angkititrakul
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 9,368,582
- Issue date Jun 14, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for interleaved boost converter with co-packaged...
- Patent number 9,324,809
- Issue date Apr 26, 2016
- Avogy, Inc.
- Hemal N. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for co-packaging vertical gallium nitride power d...
- Patent number 9,324,645
- Issue date Apr 26, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN power device with solderable back metal
- Patent number 9,324,607
- Issue date Apr 26, 2016
- Avogy, Inc.
- Patrick James Lazlo Hyland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 9,318,619
- Issue date Apr 19, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride self-aligned vertical MESFET
- Patent number 9,269,793
- Issue date Feb 23, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride power device with breakdown voltage control
- Patent number 9,257,500
- Issue date Feb 9, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET utilizing a regrown gate
- Patent number 9,184,305
- Issue date Nov 10, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 9,171,937
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating floating guard rings in GaN mater...
- Patent number 9,171,751
- Issue date Oct 27, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride P-i-N diode using implantation
- Patent number 9,171,900
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...
- Patent number 9,171,923
- Issue date Oct 27, 2015
- Avogy, Inc.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,159,784
- Issue date Oct 13, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS

Please log in for detailed analytics

Patents Applicationslast 30 patents

Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20170133481
- Publication date May 11, 2017
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR INTEGRATED POWER SUPPLY WITH ACCESSORY FUNCTIONS
- Publication number 20160241148
- Publication date Aug 18, 2016
- AVOGY, INC.
- Isik Kizilyalli
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD AND SYSTEM FOR BRIDGELESS AC-DC CONVERTER
- Publication number 20160190954
- Publication date Jun 30, 2016
- AVOGY, INC.
- Alberto Doronzo
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20160190276
- Publication date Jun 30, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR POWER PROVISIONING
- Publication number 20160072317
- Publication date Mar 10, 2016
- AVOGY, INC.
- Mikhail Guz
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...
- Publication number 20160013045
- Publication date Jan 14, 2016
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20160005835
- Publication date Jan 7, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
- Publication number 20150364612
- Publication date Dec 17, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR VARIABLE OUTPUT POWER SUPPLY
- Publication number 20150357919
- Publication date Dec 10, 2015
- AVOGY, INC.
- Antoin Russell
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PRO...
- Publication number 20150340449
- Publication date Nov 26, 2015
- AVOGY, INC.
- Ozgur Aktas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES
- Publication number 20150340476
- Publication date Nov 26, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN POWER DEVICE WITH SOLDERABLE BACK METAL
- Publication number 20150340271
- Publication date Nov 26, 2015
- AVOGY, INC.
- Patrick James Lazlo Hyland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AC-DC CONVERTER FOR WIDE RANGE OUTPUT VOLTAGE AND HIGH SWITCHING FR...
- Publication number 20150326140
- Publication date Nov 12, 2015
- AVOGY, INC.
- Sitthipong Angkititrakul
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTER
- Publication number 20150263639
- Publication date Sep 17, 2015
- AVOGY, INC.
- Antoin Russell
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
RESONANT CONVERTER AND CONTROL
- Publication number 20150263628
- Publication date Sep 17, 2015
- AVOGY, INC.
- Antoin Russell
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTER
- Publication number 20150263640
- Publication date Sep 17, 2015
- AVOGY, INC.
- Antoin Russell
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20150255582
- Publication date Sep 10, 2015
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20150243758
- Publication date Aug 27, 2015
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS
- Publication number 20150206768
- Publication date Jul 23, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20150200268
- Publication date Jul 16, 2015
- AVOGY, INC.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICS
- Publication number 20150188521
- Publication date Jul 2, 2015
- AVOGY, INC.
- Hemal N. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET
- Publication number 20150179772
- Publication date Jun 25, 2015
- AVOGY, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20150179733
- Publication date Jun 25, 2015
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS

Please log in for detailed analytics

Trademarklast 30 trademarks

Information Trademark
86286590 - ZOLT
- Serial number 86286590
- Filing date May 20, 2014
- Avogy, Inc.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments
Information Trademark
85661149 - TRUE GAN
- Serial number 85661149
- Registration number 5041302
- Filing date Jun 25, 2012
- Avogy, Inc.
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

Avogy, Inc.

Organization

Patents Grantslast 30 patents

AC-DC converter with adjustable output

Method of fabricating a merged P-N junction and schottky diode with...

InGaN ohmic source contacts for vertical power devices

Method and system for planar regrowth in GaN electronic devices

Method of fabricating a GaN P-i-N diode using implantation

Lateral GaN JFET with vertical drift region

GaN-based Schottky barrier diode with algan surface layer

Power supply

Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...

Vertical GaN JFET with low gate-drain capacitance and high gate-sou...

AC-DC converter for wide range output voltage and high switching fr...

High power gallium nitride electronics using miscut substrates

Edge termination by ion implantation in gallium nitride

Method and system for interleaved boost converter with co-packaged...

Method and system for co-packaging vertical gallium nitride power d...

GaN power device with solderable back metal

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Vertical gallium nitride JFET with gate and source electrodes on re...

Method and system for doping control in gallium nitride based devices

Method and system for a gallium nitride self-aligned vertical MESFET

Vertical gallium nitride power device with breakdown voltage control

Method and system for floating guard rings in gallium nitride mater...

Schottky diode with buried layer in GaN materials

Method and system for a GAN vertical JFET utilizing a regrown gate

Monolithically integrated vertical JFET and Schottky diode

Method and system for fabricating floating guard rings in GaN mater...

Method of fabricating a gallium nitride P-i-N diode using implantation

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Patents Applicationslast 30 patents

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

METHOD AND SYSTEM FOR INTEGRATED POWER SUPPLY WITH ACCESSORY FUNCTIONS

METHOD AND SYSTEM FOR BRIDGELESS AC-DC CONVERTER

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR POWER PROVISIONING

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...

METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

METHOD AND SYSTEM FOR VARIABLE OUTPUT POWER SUPPLY

GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PRO...

METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES

GAN POWER DEVICE WITH SOLDERABLE BACK METAL

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

AC-DC CONVERTER FOR WIDE RANGE OUTPUT VOLTAGE AND HIGH SWITCHING FR...

ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTER

RESONANT CONVERTER AND CONTROL

ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTER

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICS

METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

Trademarklast 30 trademarks

86286590 - ZOLT

85661149 - TRUE GAN