Founder Microelectronics International Co., Ltd.

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Shenzhen, CN

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Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device and method of fabricating the same and c...
- Patent number 9,490,315
- Issue date Nov 8, 2016
- Peking University Founder Group Co., Ltd.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage LDMOS integrated device
- Patent number 9,236,469
- Issue date Jan 12, 2016
- Peking University Founder Group Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing laterally diffused metal oxide semiconduct...
- Patent number 9,190,280
- Issue date Nov 17, 2015
- Peking University Founder Group Co., Ltd.
- Zhengfeng Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating GOI silicon wafer, GOI silicon wafer and GOI...
- Patent number 9,136,127
- Issue date Sep 15, 2015
- Peking University Founder Group Co., Ltd.
- Wanli Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing insulated gate bipolar transistor IGBT
- Patent number 9,018,049
- Issue date Apr 28, 2015
- Peking University Founder Group Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing oxide layer
- Patent number 8,975,194
- Issue date Mar 10, 2015
- Peking University Founder Group Co., Ltd.
- Jinyuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing double-layer polysilicon gate
- Patent number 8,722,483
- Issue date May 13, 2014
- Peking University Founder Group Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME AND C...
- Publication number 20150214295
- Publication date Jul 30, 2015
- PEKING UNIVERSITY FOUNDER GROUP CO., LTD.
- Li LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FABRICATING METHOD AND TRANSISTOR
- Publication number 20150130025
- Publication date May 14, 2015
- PEKING UNIVERSITY FOUNDER GROUP CO., LTD.
- Guangran PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150037969
- Publication date Feb 5, 2015
- Founder Microelectronics International Co., Ltd.
- Zhengfeng WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Insulated Gate Bipolar Transistor IGBT
- Publication number 20150031174
- Publication date Jan 29, 2015
- Founder Microelectronics International Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150021735
- Publication date Jan 22, 2015
- Founder Microelectronics International Co., Ltd.
- Zhengfeng WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating GOI Silicon Wafer, GOI Silicon Wafer and GOI...
- Publication number 20140209906
- Publication date Jul 31, 2014
- Founder Microelectronics International Co., Ltd.
- Wanli Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEVICE AND METHOD FOR FABRICATING THE INTEGRATED DEVICE
- Publication number 20140167158
- Publication date Jun 19, 2014
- Founder Microelectronics International Co., Ltd.
- Guangran PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE LDMOS INTEGRATED DEVICE
- Publication number 20140145262
- Publication date May 29, 2014
- Founder Microelectronics International Co., Ltd.
- Guangran Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING OXIDE LAYER
- Publication number 20140134850
- Publication date May 15, 2014
- Founder Microelectronics International Co., Ltd.
- Jinyuan CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Chip and Methods for Producing the Same
- Publication number 20130187254
- Publication date Jul 25, 2013
- Founder Microelectronics International Co., Ltd.
- Wanli MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING DOUBLE-LAYER POLYSILICON GATE
- Publication number 20130183821
- Publication date Jul 18, 2013
- Founder Microelectronics International Co., Ltd.
- Guangran PAN
- H01 - BASIC ELECTRIC ELEMENTS

Founder Microelectronics International Co., Ltd.

Organization

Patents Grantslast 30 patents

Power semiconductor device and method of fabricating the same and c...

High-voltage LDMOS integrated device

Method for manufacturing laterally diffused metal oxide semiconduct...

Method of fabricating GOI silicon wafer, GOI silicon wafer and GOI...

Method for manufacturing insulated gate bipolar transistor IGBT

Method for manufacturing oxide layer

Method for manufacturing double-layer polysilicon gate

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME AND C...

TRANSISTOR FABRICATING METHOD AND TRANSISTOR

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Method for Manufacturing Insulated Gate Bipolar Transistor IGBT

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Method of Fabricating GOI Silicon Wafer, GOI Silicon Wafer and GOI...

INTEGRATED DEVICE AND METHOD FOR FABRICATING THE INTEGRATED DEVICE

HIGH-VOLTAGE LDMOS INTEGRATED DEVICE

METHOD FOR MANUFACTURING OXIDE LAYER

Semiconductor Chip and Methods for Producing the Same

METHOD FOR MANUFACTURING DOUBLE-LAYER POLYSILICON GATE

Trademarklast 30 trademarks