Global Power Technologies Group, Inc.

Organization

Lake Forest, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 10,879,388
- Issue date Dec 29, 2020
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 10,505,035
- Issue date Dec 10, 2019
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 9,780,206
- Issue date Oct 3, 2017
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor devices having nitrogen-doped interface
- Patent number 9,613,810
- Issue date Apr 4, 2017
- Global Power Technologies Group, Inc.
- Michael MacMillan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor devices having nitrogen-doped interface
- Patent number 9,590,067
- Issue date Mar 7, 2017
- Global Power Technologies Group, Inc.
- Michael MacMillan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective interface in silicon carbide semiconductor devices
- Patent number 9,276,069
- Issue date Mar 1, 2016
- Global Power Technologies Group, Inc.
- Utpal K. Chakrabarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor devices
- Patent number 9,219,122
- Issue date Dec 22, 2015
- Global Power Technologies Group, Inc.
- Michael MacMillan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of Reducing the Electrical and Thermal Resistance of SIC Su...
- Publication number 20210119042
- Publication date Apr 22, 2021
- Global Power Technologies Group, Inc.
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Reducing the Electrical and Thermal Resistance of SIC Su...
- Publication number 20200111904
- Publication date Apr 9, 2020
- Global Power Technologies Group, Inc.
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE BASED ON WIDEBAND GAP SEMICONDUCTOR MATERIALS
- Publication number 20180019309
- Publication date Jan 18, 2018
- Global Power Technologies Group, Inc.
- Rahul Radhakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED AND STEPPED EPITAXY FOR CONSTRUCTING POWER CIRCUITS AND DEVICES
- Publication number 20180019335
- Publication date Jan 18, 2018
- Global Power Technologies Group, Inc.
- Rahul Radhakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES HAVING NITROGEN-DOPED INTERFACE
- Publication number 20170032965
- Publication date Feb 2, 2017
- Global Power Technologies Group, Inc.
- Michael MacMillan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES
- Publication number 20160172481
- Publication date Jun 16, 2016
- Global Power Technologies Group, Inc.
- Michael MacMillan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION EDGE TERMINATION FOR POWER DEVICES
- Publication number 20160126308
- Publication date May 5, 2016
- Global Power Technologies Group, Inc.
- Rahul Radhakrishnan
- H01 - BASIC ELECTRIC ELEMENTS

Global Power Technologies Group, Inc.

Organization

Patents Grantslast 30 patents

Methods of reducing the electrical and thermal resistance of SiC su...

Methods of reducing the electrical and thermal resistance of SiC su...

Methods of reducing the electrical and thermal resistance of SiC su...

Silicon carbide semiconductor devices having nitrogen-doped interface

Silicon carbide semiconductor devices having nitrogen-doped interface

Protective interface in silicon carbide semiconductor devices

Silicon carbide semiconductor devices

Patents Applicationslast 30 patents

Methods of Reducing the Electrical and Thermal Resistance of SIC Su...

Methods of Reducing the Electrical and Thermal Resistance of SIC Su...

SEMICONDUCTOR DEVICE BASED ON WIDEBAND GAP SEMICONDUCTOR MATERIALS

GRADED AND STEPPED EPITAXY FOR CONSTRUCTING POWER CIRCUITS AND DEVICES

SILICON CARBIDE SEMICONDUCTOR DEVICES HAVING NITROGEN-DOPED INTERFACE

SILICON CARBIDE SEMICONDUCTOR DEVICES

SUPER-JUNCTION EDGE TERMINATION FOR POWER DEVICES

Trademarklast 30 trademarks