JIANGSU ADVANCED MEMORY SEMICONDUCTOR CO., LTD.

Organization

  • Hsinchu County, TW

Patents Grantslast 30 patents

Patents Applicationslast 30 patents

  • Information Patent Application

    METHOD OF FABRICATING DIODE STRUCTURE

    • Publication number 20220278219
    • Publication date Sep 1, 2022
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Chieh-Fang CHEN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF MANUFACTURING PHASE CHANGE MEMORY AND PHASE CHANGE MEMORY

    • Publication number 20210376237
    • Publication date Dec 2, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Chung-Hon LAM
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF MANUFACTURING PHASE CHANGE MEMORY

    • Publication number 20210376238
    • Publication date Dec 2, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Chung-Hon LAM
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    METHOD OF FABRICATING DIODE STRUCTURE

    • Publication number 20210376110
    • Publication date Dec 2, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Chieh-Fang CHEN
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    DIODE STRUCTURE AND METHOD OF FABRICATING THE SAME

    • Publication number 20210376186
    • Publication date Dec 2, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Kuo-Feng LO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    MEMORY DEVICE AND OPERATION METHOD

    • Publication number 20210357317
    • Publication date Nov 18, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Chien Chuan WANG
    • G06 - COMPUTING CALCULATING COUNTING
  • Information Patent Application

    MEMORY DRIVING DEVICE

    • Publication number 20210312980
    • Publication date Oct 7, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Jui-Jen WU
    • G11 - INFORMATION STORAGE
  • Information Patent Application

    MIXED MODE MEMORY

    • Publication number 20210280249
    • Publication date Sep 9, 2021
    • JIANGSU ADVANCED MEMORY TECHNOLOGY CO., LTD.
    • Yu-Cheng LIAO
    • G11 - INFORMATION STORAGE
  • Information Patent Application

    MEMORY DRIVE DEVICE

    • Publication number 20210272628
    • Publication date Sep 2, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Jui-Jen WU
    • G11 - INFORMATION STORAGE
  • Information Patent Application

    MEMORY CELL MANUFACTURING METHOD

    • Publication number 20210057489
    • Publication date Feb 25, 2021
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Yu-Cheng LIAO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    PHASE CHANGE MEMORY AND METHOD OF FABRICATING THE SAME

    • Publication number 20200373483
    • Publication date Nov 26, 2020
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Sheng-Hung CHENG
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    MEMORY CELL AND MANUFACTURING METHOD THEREOF AND MEMORY DEVICE

    • Publication number 20200328254
    • Publication date Oct 15, 2020
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Yu-Cheng LIAO
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Application

    MEMORY TEST ARRAY AND TEST METHOD THEREOF

    • Publication number 20200312421
    • Publication date Oct 1, 2020
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Hsiung-Shih CHANG
    • G11 - INFORMATION STORAGE
  • Information Patent Application

    PHASE CHANGE MEMORY AND METHOD OF FABRICATING THE SAME

    • Publication number 20200303638
    • Publication date Sep 24, 2020
    • Jiangsu Advanced Memory Technology Co., Ltd.
    • Sheng-Hung CHENG
    • H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks