LATTICE POWER (JIANGXI) CORPORATION

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Nanchang, Jiang Xi, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing gallium nitride-based film chip
- Patent number 9,224,597
- Issue date Dec 29, 2015
- Lattice Power (Jiangxi) Corporation
- Hanmin Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating InGaN-based multi-quantum well layers
- Patent number 8,461,029
- Issue date Jun 11, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating InGaAlN light emitting device on a combined...
- Patent number 8,435,816
- Issue date May 7, 2013
- Lattice Power (Jiangxi) Corporation
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a p-type semiconductor structure
- Patent number 8,431,936
- Issue date Apr 30, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a low-resistivity ohmic contact to a p-type...
- Patent number 8,431,475
- Issue date Apr 30, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for obtaining high-quality boundary for semiconductor device...
- Patent number 8,426,325
- Issue date Apr 23, 2013
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaAIN light-emitting device and manufacturing method thereof
- Patent number 8,384,100
- Issue date Feb 26, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating InGaAIN light-emitting diodes with a metal s...
- Patent number 8,383,438
- Issue date Feb 26, 2013
- Lattice Power (Jiangxi) Corporation
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with metal support substrate
- Patent number 8,361,880
- Issue date Jan 29, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting devices for generating arbitrary color
- Patent number 8,354,665
- Issue date Jan 15, 2013
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating robust light-emitting diodes
- Patent number 8,222,063
- Issue date Jul 17, 2012
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride light-emitting device with ultra-high reverse break...
- Patent number 8,053,757
- Issue date Nov 8, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-power light-emitting diode arrays
- Patent number 8,044,416
- Issue date Oct 25, 2011
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with a highly reflective ohmic-...
- Patent number 7,977,663
- Issue date Jul 12, 2011
- Lattice Power (Jiangxi) Corporation
- Yingwen Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with double-sided passivation
- Patent number 7,943,942
- Issue date May 17, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and method for making same
- Patent number 7,919,784
- Issue date Apr 5, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high-quality semiconductor light-emitting de...
- Patent number 7,902,556
- Issue date Mar 8, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication InGaAIN film and light-emitting device on a s...
- Patent number 7,888,779
- Issue date Feb 15, 2011
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating highly reflective ohmic contact in light-emi...
- Patent number 7,829,359
- Issue date Nov 9, 2010
- Lattice Power (Jiangxi) Corporation
- Yingwen Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating metal substrates with high-quality surfaces
- Patent number 7,758,695
- Issue date Jul 20, 2010
- Lattice Power (Jiangxi) Corporation
- Chuanbing Xiong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
InGaAIN light-emitting device containing carbon-based substrate and...
- Patent number 7,741,632
- Issue date Jun 22, 2010
- Lattice Power (Jiangxi) Corporation
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with electrode for N-polar InGa...
- Patent number 7,705,348
- Issue date Apr 27, 2010
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 7,692,205
- Issue date Apr 6, 2010
- Lattice Power (Jiangxi) Corporation
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing indium gallium aluminium nitride thin film...
- Patent number 7,615,420
- Issue date Nov 10, 2009
- Lattice Power (Jiangxi) Corporation
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE-BASED FILM CHIP
- Publication number 20140147987
- Publication date May 29, 2014
- Shineon (Beijing) Technology Co., Ltd
- Hanmin Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS
- Publication number 20120295422
- Publication date Nov 22, 2012
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICES FOR GENERATING ARBITRARY COLOR
- Publication number 20120037883
- Publication date Feb 16, 2012
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILAN...
- Publication number 20110298005
- Publication date Dec 8, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICE...
- Publication number 20110281422
- Publication date Nov 17, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM
- Publication number 20110253972
- Publication date Oct 20, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER
- Publication number 20110147704
- Publication date Jun 23, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER
- Publication number 20110147705
- Publication date Jun 23, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING INGAAIN LIGHT EMITTING DEVICE ON A COMBINED...
- Publication number 20110143467
- Publication date Jun 16, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL S...
- Publication number 20110140080
- Publication date Jun 16, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOU...
- Publication number 20110140081
- Publication date Jun 16, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS
- Publication number 20110133158
- Publication date Jun 9, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER
- Publication number 20110133159
- Publication date Jun 9, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES
- Publication number 20110049540
- Publication date Mar 3, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-...
- Publication number 20110031472
- Publication date Feb 10, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Yingwen Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAK...
- Publication number 20110006319
- Publication date Jan 13, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION
- Publication number 20110001120
- Publication date Jan 6, 2011
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE...
- Publication number 20100219394
- Publication date Sep 2, 2010
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING HIGHLY REFLECTIVE OHMIC CONTACT IN LIGHT-EMI...
- Publication number 20100207096
- Publication date Aug 19, 2010
- LATTICE POWER (JIANGXI) CORPORATION
- Yingwen Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS
- Publication number 20100176404
- Publication date Jul 15, 2010
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A S...
- Publication number 20090050927
- Publication date Feb 26, 2009
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090026473
- Publication date Jan 29, 2009
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE
- Publication number 20080315212
- Publication date Dec 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND...
- Publication number 20080265265
- Publication date Oct 30, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Chuanbing Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICE...
- Publication number 20080261403
- Publication date Oct 23, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film...
- Publication number 20080248633
- Publication date Oct 9, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device
- Publication number 20080246048
- Publication date Oct 9, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...
- Publication number 20080230792
- Publication date Sep 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...
- Publication number 20080230799
- Publication date Sep 25, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Light-Emitting Device With Metal Support Substrate
- Publication number 20080224154
- Publication date Sep 18, 2008
- LATTICE POWER (JIANGXI) CORPORATION
- Fengyi Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks

Information Trademark
77070621 - LATTICEPOWER
- Serial number 77070621
- Registration number 3595338
- Filing date Dec 22, 2006
- Lattice Power (Jiangxi) Corporation
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

LATTICE POWER (JIANGXI) CORPORATION

Organization

Patents Grantslast 30 patents

Method for manufacturing gallium nitride-based film chip

Method for fabricating InGaN-based multi-quantum well layers

Method for fabricating InGaAlN light emitting device on a combined...

Method for fabricating a p-type semiconductor structure

Method for fabricating a low-resistivity ohmic contact to a p-type...

Method for obtaining high-quality boundary for semiconductor device...

InGaAIN light-emitting device and manufacturing method thereof

Method for fabricating InGaAIN light-emitting diodes with a metal s...

Semiconductor light-emitting device with metal support substrate

Semiconductor light-emitting devices for generating arbitrary color

Method for fabricating robust light-emitting diodes

Gallium nitride light-emitting device with ultra-high reverse break...

Method for fabricating high-power light-emitting diode arrays

Semiconductor light-emitting device with a highly reflective ohmic-...

Semiconductor light-emitting device with double-sided passivation

Semiconductor light-emitting device and method for making same

Method for fabricating high-quality semiconductor light-emitting de...

Method of fabrication InGaAIN film and light-emitting device on a s...

Method for fabricating highly reflective ohmic contact in light-emi...

Method for fabricating metal substrates with high-quality surfaces

InGaAIN light-emitting device containing carbon-based substrate and...

Semiconductor light-emitting device with electrode for N-polar InGa...

Semiconductor light-emitting device

Method for manufacturing indium gallium aluminium nitride thin film...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING GALLIUM NITRIDE-BASED FILM CHIP

METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS

SEMICONDUCTOR LIGHT-EMITTING DEVICES FOR GENERATING ARBITRARY COLOR

METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILAN...

METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICE...

LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION LAYER

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SILICONE PROTECTIVE LAYER

METHOD FOR FABRICATING INGAAIN LIGHT EMITTING DEVICE ON A COMBINED...

METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL S...

METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOU...

METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PASSIVATION IN P-TYPE LAYER

METHOD FOR FABRICATING ROBUST LIGHT-EMITTING DIODES

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-...

GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAK...

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH DOUBLE-SIDED PASSIVATION

METHOD FOR FABRICATING A LOW-RESISTIVITY OHMIC CONTACT TO A P-TYPE...

METHOD FOR FABRICATING HIGHLY REFLECTIVE OHMIC CONTACT IN LIGHT-EMI...

METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS

METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A S...

InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE

InGaAlN LIGHT-EMITTING DEVICE CONTAINING CARBON-BASED SUBSTRATE AND...

METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICE...

Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film...

Semiconductor Light-Emitting Device

Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...

Semiconductor Light-Emitting Device with Electrode for N-Polar Inga...

Semiconductor Light-Emitting Device With Metal Support Substrate

Trademarklast 30 trademarks

77070621 - LATTICEPOWER