M-MOS Semiconductor Sdn. Bhd.

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Patents Grantslast 30 patents

Information Patent Grant
High density trench MOSFET with reduced on-resistance
- Patent number 7,687,851
- Issue date Mar 30, 2010
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density hybrid MOSFET device
- Patent number 7,592,650
- Issue date Sep 22, 2009
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming sub-100nm narrow trenches in semiconductor substr...
- Publication number 20070238251
- Publication date Oct 11, 2007
- M-MOS Semiconductor Sdn. Bhd.
- Chu Yaw Liau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched MOSFETS with improved ESD protection capability
- Publication number 20070176239
- Publication date Aug 2, 2007
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched MOSFET termination with tungsten plug structures
- Publication number 20070004116
- Publication date Jan 4, 2007
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched MOSFET device with contact trenches filled with tungsten p...
- Publication number 20060273385
- Publication date Dec 7, 2006
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Trademarklast 30 trademarks