Mitsubishi Materials Silicon Corporation

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method for cleaning polysilicon
- Patent number 7,067,428
- Issue date Jun 27, 2006
- Mitsubishi Materials Silicon Corp.
- Kenji Hori
- B08 - CLEANING
Information Patent Grant
Method for analyzing impurities in a silicon substrate and apparatu...
- Patent number 6,995,834
- Issue date Feb 7, 2006
- Mitsubishi Materials Silicon Corp.
- Mohammad B. Shabani
- G01 - MEASURING TESTING
Information Patent Grant
Evaluation method for polycrystalline silicon
- Patent number 6,916,657
- Issue date Jul 12, 2005
- Mitsubishi Materials Silicon Corporation
- Kenji Hori
- G01 - MEASURING TESTING
Information Patent Grant
Method of purging CVD apparatus and method for judging maintenance...
- Patent number 6,887,721
- Issue date May 3, 2005
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Hasegawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial wafer
- Patent number 6,818,197
- Issue date Nov 16, 2004
- Mitsubishi Materials Silicon Corporation
- Kazuhiro Ikezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically separated wafer and method of the same
- Patent number 6,815,774
- Issue date Nov 9, 2004
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Oi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing method and semiconductor manufacturing...
- Patent number 6,794,204
- Issue date Sep 21, 2004
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Hasegawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor manufacturing apparatus having a moisture measuring d...
- Patent number 6,776,805
- Issue date Aug 17, 2004
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Hasegawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for evaluating the quality of a semiconductor substrate
- Patent number 6,693,286
- Issue date Feb 17, 2004
- Mitsubishi Materials Silicon Corporation
- Takeshi Hasegawa
- G01 - MEASURING TESTING
Information Patent Grant
Silicon wafer, and heat treatment method of the same and the heat-t...
- Patent number 6,682,597
- Issue date Jan 27, 2004
- Mitsubishi Materials Silicon Corporation
- Hiroshi Koya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer, and manufacturing method and heat treatment method o...
- Patent number 6,663,708
- Issue date Dec 16, 2003
- Mitsubishi Materials Silicon Corporation
- Etsuro Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal-pulling apparatus for pulling and growing a monocrystalline...
- Patent number 6,648,967
- Issue date Nov 18, 2003
- Mitsubishi Materials Silicon Corporation
- Volker R. Todt
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Dielectric isolated wafer and its production method
- Patent number 6,562,692
- Issue date May 13, 2003
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Oi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate, method of manufacture thereof, and semiconductor dev...
- Patent number 6,558,990
- Issue date May 6, 2003
- Mitsubishi Materials Silicon Corporation
- Masaru Takamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and a method for manufacturing the same
- Patent number 6,547,875
- Issue date Apr 15, 2003
- Mitsubishi Materials Silicon Corporation
- Ken Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for evaluating the quality of a semiconductor...
- Patent number 6,534,774
- Issue date Mar 18, 2003
- Mitsubishi Materials Silicon Corporation
- Takeshi Hasegawa
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor substrate, field effect transistor, method of forming...
- Patent number 6,525,338
- Issue date Feb 25, 2003
- Mitsubishi Materials Corporation
- Kazuki Mizushima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD apparatus equipped with moisture monitoring
- Patent number 6,491,758
- Issue date Dec 10, 2002
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Hasegawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Wafer holder
- Patent number 6,474,987
- Issue date Nov 5, 2002
- Mitsubishi Materials Silicon Corporation
- Tetsuya Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Dielectrically separated wafer and method of manufacturing the same
- Patent number 6,472,289
- Issue date Oct 29, 2002
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Oi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for simulating the shape of the solid-liquid interface betwe...
- Patent number 6,451,107
- Issue date Sep 17, 2002
- Mitsubishi Materials Silicon Corporation
- Kounosuke Kitamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of removing defects of single crystal material and single cr...
- Patent number 6,447,600
- Issue date Sep 10, 2002
- Mitsubishi Materials Silicon Corporation
- Jun Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer, and heat treatment method of the same and the heat-t...
- Patent number 6,428,619
- Issue date Aug 6, 2002
- Mitsubishi Materials Silicon Corporation
- Hiroshi Koya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal shield device and crystal-pulling apparatus using the same
- Patent number 6,379,460
- Issue date Apr 30, 2002
- Mitsubishi Materials Silicon Corporation
- Kazuhiro Harada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer
- Patent number 6,348,261
- Issue date Feb 19, 2002
- Mitsubishi Materials Silicon Corporation
- Yoshio Murakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
Washing solution of semiconductor substrate and washing method usin...
- Patent number 6,296,714
- Issue date Oct 2, 2001
- Mitsubishi Materials Silicon Corporation
- Chizuko Matsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor single-crystal growth system
- Patent number 6,261,364
- Issue date Jul 17, 2001
- Mitsubishi Materials Corporation
- Yoshiaki Arai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Treatment method for semiconductor substrates
- Patent number 6,146,467
- Issue date Nov 14, 2000
- Mitsubishi Materials Silicon Corporation
- Kazushige Takaishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for feeding a gas for epitaxial growth
- Patent number 6,123,767
- Issue date Sep 26, 2000
- Mitsubishi Materials Silicon Corporation
- Yoshiharu Toyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon crystal, and device and method for manufacturing same
- Patent number 6,096,128
- Issue date Aug 1, 2000
- Toshiba Ceramics Co., Ltd.
- Hideo Nakanishi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor manufacturing method and semiconductor manufacturing...
- Publication number 20040092043
- Publication date May 13, 2004
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Hasegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Anisotropic etching method and apparatus
- Publication number 20030124853
- Publication date Jul 3, 2003
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Oi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Linearity measuring apparatus for wafer orientation flat
- Publication number 20020189118
- Publication date Dec 19, 2002
- Mitsubishi Materials Silicon Corporation
- Cindy Kohanek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for cleaning polysilicon
- Publication number 20020168880
- Publication date Nov 14, 2002
- Mitsubishi Materials Silicon Corporation
- Kenji Hori
- B08 - CLEANING
Information Patent Application
Method for analyzing impurities in a silicon substrate and apparatu...
- Publication number 20020101576
- Publication date Aug 1, 2002
- Mitsubishi Materials Silicon Corporation
- Mohammad B. Shabani
- G01 - MEASURING TESTING
Information Patent Application
Method of purging CVD apparatus and method for judging maintenance...
- Publication number 20020061605
- Publication date May 23, 2002
- Mitsubishi Materials Silicon Corporation and Nippon Sanso Corporation
- Hiroyuki Hasegawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Dielectrically separated wafer and method of manufacturing the same
- Publication number 20020045329
- Publication date Apr 18, 2002
- Mitsubishi Materials Silicon Corporation
- Hiroyuki Oi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for evaluating the quality of a semiconductor...
- Publication number 20020045283
- Publication date Apr 18, 2002
- Mitsubishi Materials Silicon Corporation
- Takeshi Hasegawa
- G01 - MEASURING TESTING
Information Patent Application
Method for simulating the shape of the solid-liquid interface betwe...
- Publication number 20010042504
- Publication date Nov 22, 2001
- Mitsubishi Materials Silicon Corporation
- Kounosuke Kitamura
- C30 - CRYSTAL GROWTH

Trademarklast 30 trademarks

Information Trademark
74241940 - MSIL
- Serial number 74241940
- Registration number 1821977
- Filing date Jan 31, 1992
- Mitsubishi Materials Silicon Corporation
- 9 - Scientific, nautical, surveying, photographic, cinematographic, optical, weighing, measuring, signalling, checking (supervision), life-saving and teaching apparatus and instruments

Mitsubishi Materials Silicon Corporation

Organization

Patents Grantslast 30 patents

Method for cleaning polysilicon

Method for analyzing impurities in a silicon substrate and apparatu...

Evaluation method for polycrystalline silicon

Method of purging CVD apparatus and method for judging maintenance...

Epitaxial wafer

Dielectrically separated wafer and method of the same

Semiconductor manufacturing method and semiconductor manufacturing...

Semiconductor manufacturing apparatus having a moisture measuring d...

Method for evaluating the quality of a semiconductor substrate

Silicon wafer, and heat treatment method of the same and the heat-t...

Silicon wafer, and manufacturing method and heat treatment method o...

Crystal-pulling apparatus for pulling and growing a monocrystalline...

Dielectric isolated wafer and its production method

SOI substrate, method of manufacture thereof, and semiconductor dev...

Epitaxial wafer and a method for manufacturing the same

Method and apparatus for evaluating the quality of a semiconductor...

Semiconductor substrate, field effect transistor, method of forming...

CVD apparatus equipped with moisture monitoring

Wafer holder

Dielectrically separated wafer and method of manufacturing the same

Method for simulating the shape of the solid-liquid interface betwe...

Method of removing defects of single crystal material and single cr...

Silicon wafer, and heat treatment method of the same and the heat-t...

Thermal shield device and crystal-pulling apparatus using the same

Silicon wafer

Washing solution of semiconductor substrate and washing method usin...

Semiconductor single-crystal growth system

Treatment method for semiconductor substrates

Method and apparatus for feeding a gas for epitaxial growth

Silicon crystal, and device and method for manufacturing same

Patents Applicationslast 30 patents

Semiconductor manufacturing method and semiconductor manufacturing...

Anisotropic etching method and apparatus

Linearity measuring apparatus for wafer orientation flat

Method for cleaning polysilicon

Method for analyzing impurities in a silicon substrate and apparatu...

Method of purging CVD apparatus and method for judging maintenance...

Dielectrically separated wafer and method of manufacturing the same

Method and apparatus for evaluating the quality of a semiconductor...

Method for simulating the shape of the solid-liquid interface betwe...

Trademarklast 30 trademarks

74241940 - MSIL