SEMI SOLUTIONS LLC

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Los Gatos, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Fluctuation resistant FinFET
- Patent number 9,847,404
- Issue date Dec 19, 2017
- SemiWise Limited
- Robert J. Strain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced variation MOSFET using a drain-extension-last process
- Patent number 9,379,214
- Issue date Jun 28, 2016
- Semi Solutions LLC.
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for improved leakage current of silicon on ins...
- Patent number 8,247,840
- Issue date Aug 21, 2012
- Semi Solutions, LLC
- Ashok Kumar Kapoor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for MOSFET drain-source leakage reduction
- Patent number 8,207,784
- Issue date Jun 26, 2012
- Semi Solutions, LLC
- Yannis Tsividis
- G05 - CONTROLLING REGULATING
Information Patent Grant
Method for reducing leakage current and increasing drive current in...
- Patent number 8,048,732
- Issue date Nov 1, 2011
- Semi Solutions, LLC
- Ashok Kumar Kapoor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method and apparatus for dynamic threshold voltage control of MOS t...
- Patent number 7,898,297
- Issue date Mar 1, 2011
- Semi Solution, LLC
- Ashok Kumar Kapoor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Apparatus for using a well current source to effect a dynamic thres...
- Patent number 7,863,689
- Issue date Jan 4, 2011
- Semi Solutions, LLC
- Robert Strain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of an apparatus for increasing stability of M...
- Patent number 7,691,702
- Issue date Apr 6, 2010
- Semi Solutions, LLC
- Ashok Kumar Kapoor
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for improving drive-strength and leakage of de...
- Patent number 7,683,433
- Issue date Mar 23, 2010
- Semi Solution, LLC
- Ashok Kumar Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for reducing gate leakage in deep sub-micron M...
- Patent number 7,651,905
- Issue date Jan 26, 2010
- Semi Solutions, LLC
- Ashok Kumar Kapoor
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for improving drive-strength and leakage of de...
- Patent number 7,586,155
- Issue date Sep 8, 2009
- Semi Solutions LLC.
- Ashok Kumar Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for increasing stability of MOS memory cells
- Patent number 7,375,402
- Issue date May 20, 2008
- Semi Solutions, LLC
- Ashok Kumar Kapoor
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for improving drive-strength and leakage of de...
- Patent number 7,224,205
- Issue date May 29, 2007
- Semi Solutions, LLC
- Ashok Kumar Kapoor
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Reduced Variation MOSFET Using a Drain-Extension-Last Process
- Publication number 20160260816
- Publication date Sep 8, 2016
- SEMI SOLUTIONS LLC
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Variation MOSFET Using a Drain-Extension-Last Process
- Publication number 20150236117
- Publication date Aug 20, 2015
- SEMI SOLUTIONS LLC
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluctuation Resistant FinFET
- Publication number 20150008490
- Publication date Jan 8, 2015
- SEMI SOLUTIONS LLC
- Robert J. Strain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Random Doping Fluctuation Resistant FinFET
- Publication number 20140103437
- Publication date Apr 17, 2014
- GOLD STANDARD SIMULATIONS LTD.
- Ashok K. Kapoor
- H01 - BASIC ELECTRIC ELEMENTS

SEMI SOLUTIONS LLC

Organization

Patents Grantslast 30 patents

Fluctuation resistant FinFET

Reduced variation MOSFET using a drain-extension-last process

Apparatus and method for improved leakage current of silicon on ins...

Method and apparatus for MOSFET drain-source leakage reduction

Method for reducing leakage current and increasing drive current in...

Method and apparatus for dynamic threshold voltage control of MOS t...

Apparatus for using a well current source to effect a dynamic thres...

Method of manufacture of an apparatus for increasing stability of M...

Apparatus and method for improving drive-strength and leakage of de...

Apparatus and method for reducing gate leakage in deep sub-micron M...

Apparatus and method for improving drive-strength and leakage of de...

Method and apparatus for increasing stability of MOS memory cells

Apparatus and method for improving drive-strength and leakage of de...

Patents Applicationslast 30 patents

Reduced Variation MOSFET Using a Drain-Extension-Last Process

Reduced Variation MOSFET Using a Drain-Extension-Last Process

Fluctuation Resistant FinFET

Random Doping Fluctuation Resistant FinFET

Trademarklast 30 trademarks