SiCED Electronics Development GmbH

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Erlangen, DE

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Patents Grantslast 30 patents

Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,803,160
- Issue date Aug 12, 2014
- SiCED Electronics Development GmbH & Co. KG
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,097,524
- Issue date Jan 17, 2012
- Norstel AB
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC-PN power diode
- Patent number 7,646,026
- Issue date Jan 12, 2010
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising a highly doped conductive channe...
- Patent number 7,615,802
- Issue date Nov 10, 2009
- SiCED Electronics Development GmbH & Co. KG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 7,482,068
- Issue date Jan 27, 2009
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a switch element and an edge element
- Patent number 7,071,503
- Issue date Jul 4, 2006
- SiCED Electronics Development GmbH & Co. KG
- Karl Dohnke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device made from silicon carbide with a Schottky cont...
- Patent number 6,936,850
- Issue date Aug 30, 2005
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device for switching at a high operating voltage
- Patent number 6,822,842
- Issue date Nov 23, 2004
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for contacting a semiconductor configuration
- Patent number 6,815,351
- Issue date Nov 9, 2004
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for mounting a substrate and method for producing an insert...
- Patent number 6,740,167
- Issue date May 25, 2004
- SICED Electronics Development GmbH & Co., KG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor construction with buried island region and contact re...
- Patent number 6,693,322
- Issue date Feb 17, 2004
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field-effect transistor with more highly doped connecting...
- Patent number 6,693,314
- Issue date Feb 17, 2004
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
J-FET semiconductor configuration
- Patent number 6,653,666
- Issue date Nov 25, 2003
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with ohmic contact-connection and method for t...
- Patent number 6,468,890
- Issue date Oct 22, 2002
- SiCED Electronics Development GmbH & Co. KG
- Wolfgang Bartsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an ohmic contact
- Patent number 6,365,494
- Issue date Apr 2, 2002
- SiCED Electronics Development GmbH & Co. KG
- Roland Rupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a predetermined alpha-silicon carbid...
- Patent number 6,316,791
- Issue date Nov 13, 2001
- SiCED Electronics Development GmbH & Co. KG
- Reinhold Schörner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor configuration and use thereof
- Patent number 6,232,625
- Issue date May 15, 2001
- SiCED Electronics Development GmbH & Co. KG
- Wolfgang Bartsch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor structure based on silicon carbide material, with a p...
- Patent number 6,225,680
- Issue date May 1, 2001
- SiCED Electronics Development GmbH & Co. KG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning semiconductors with high precision, good homo...
- Patent number 6,204,135
- Issue date Mar 20, 2001
- SiCED Electronics Development GmbH & Co. KG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for limiting alternating electric currents, in particular in...
- Patent number 6,188,555
- Issue date Feb 13, 2001
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20120091471
- Publication date Apr 19, 2012
- SiCED Electronics Development GmbH
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20090114924
- Publication date May 7, 2009
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC-PN Power Diode
- Publication number 20080217627
- Publication date Sep 11, 2008
- SiCED Electronics Development GmbH
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure comprising a highly doped conductive channe...
- Publication number 20060255373
- Publication date Nov 16, 2006
- SiCED Electronics Development GmbH & Co. KG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure with a switch element and an edge element
- Publication number 20050062112
- Publication date Mar 24, 2005
- SiCED Electronics Development GmbH & Co., KG
- Karl Dohnke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for contacting a semiconductor configuration
- Publication number 20030146437
- Publication date Aug 7, 2003
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS

SiCED Electronics Development GmbH

Organization

Patents Grantslast 30 patents

Lightly doped silicon carbide wafer and use thereof in high power d...

Lightly doped silicon carbide wafer and use thereof in high power d...

SiC-PN power diode

Semiconductor structure comprising a highly doped conductive channe...

Lightly doped silicon carbide wafer and use thereof in high power d...

Semiconductor structure with a switch element and an edge element

Semiconductor device made from silicon carbide with a Schottky cont...

Switching device for switching at a high operating voltage

Method for contacting a semiconductor configuration

Device for mounting a substrate and method for producing an insert...

Semiconductor construction with buried island region and contact re...

Junction field-effect transistor with more highly doped connecting...

J-FET semiconductor configuration

Semiconductor device with ohmic contact-connection and method for t...

Method for producing an ohmic contact

Semiconductor structure having a predetermined alpha-silicon carbid...

Semiconductor configuration and use thereof

Semiconductor structure based on silicon carbide material, with a p...

Method for patterning semiconductors with high precision, good homo...

Device for limiting alternating electric currents, in particular in...

Patents Applicationslast 30 patents

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

SiC-PN Power Diode

Semiconductor structure comprising a highly doped conductive channe...

Semiconductor structure with a switch element and an edge element

Method for contacting a semiconductor configuration

Trademarklast 30 trademarks