SiCrystal GmbH

Organization

Organizations

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide substrate and method of growing SiC single crystal...
- Patent number 11,781,245
- Issue date Oct 10, 2023
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate and method of growing SiC single crystal...
- Patent number 11,624,124
- Issue date Apr 11, 2023
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for efficient manufacturing of a plurality of high-quality s...
- Patent number 11,560,643
- Issue date Jan 24, 2023
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chamfered silicon carbide substrate and method of chamfering
- Patent number 11,515,140
- Issue date Nov 29, 2022
- SICRYSTAL GMBH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Grant
System for horizontal growth of high-quality semiconductor single c...
- Patent number 11,479,875
- Issue date Oct 25, 2022
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method and growth arrangement for producing a bulk SiC s...
- Patent number 11,261,536
- Issue date Mar 1, 2022
- SICRYSTAL GMBH
- Bernhard Ecker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide substrate and method of growing SiC single crystal...
- Patent number 11,236,438
- Issue date Feb 1, 2022
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chamfered silicon carbide substrate and method of chamfering
- Patent number 11,041,254
- Issue date Jun 22, 2021
- SICRYSTAL GMBH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a vanadium-doped silicon carbide volume monocr...
- Patent number 9,732,438
- Issue date Aug 15, 2017
- SiCrystal AG
- Ralf Mueller
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystalline SiC substrate with a non-homogeneous lattice plane...
- Patent number 9,590,046
- Issue date Mar 7, 2017
- SiCrystal Aktiengesellschaft
- Thomas Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Physical vapor transport growth system for simultaneously growing m...
- Patent number 9,376,764
- Issue date Jun 28, 2016
- SiCrystal AG
- Thomas Ludwig Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for a bulk SiC single crystal with a large facet...
- Patent number 8,865,324
- Issue date Oct 21, 2014
- SiCrystal AG
- Thomas Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for an SiC volume monocrystal with a non-homogene...
- Patent number 8,758,510
- Issue date Jun 24, 2014
- SiCrystal Aktiengesellschaft
- Thomas Straubinger
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for an SiC volume monocrystal with a homogeneous...
- Patent number 8,747,982
- Issue date Jun 10, 2014
- SiCrystal Aktiengesellschaft
- Thomas Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for a low-dislocation bulk AlN single crystal and...
- Patent number 8,303,924
- Issue date Nov 6, 2012
- SiCrystal AG
- Ralph-Uwe Barz
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

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Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...
- Publication number 20240318352
- Publication date Sep 26, 2024
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System And Method Of Growing At Least One Single Crystal
- Publication number 20240309546
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Philipp SCHUH
- C30 - CRYSTAL GROWTH
Information Patent Application
Sublimation System and Method of Growing at Least One Single Crysta...
- Publication number 20240309545
- Publication date Sep 19, 2024
- SiCrystal GmbH
- Ralf MÜLLER
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263346
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...
- Publication number 20240263347
- Publication date Aug 8, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCRE...
- Publication number 20230416939
- Publication date Dec 28, 2023
- SiCrystal GmbH
- Bernhard ECKER
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Crystal Structure Orientation in Semiconductor Semi-Finished Produc...
- Publication number 20230349071
- Publication date Nov 2, 2023
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
Monocrystalline SIC Substrates Having an Asymmetrical Geometry and...
- Publication number 20230317780
- Publication date Oct 5, 2023
- SICRYSTAL GMBH
- Kuniyoshi OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20230193508
- Publication date Jun 22, 2023
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
System For Efficient Manufacturing Of A Plurality Of High-Quality S...
- Publication number 20230120928
- Publication date Apr 20, 2023
- SiCrystal GmbH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20230078982
- Publication date Mar 16, 2023
- SiCrystal GmbH
- Bernhard Ecker
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20220090296
- Publication date Mar 24, 2022
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC CRYSTALLINE SUBSTRATES WITH AN OPTIMAL ORIENTATION OF LATTICE P...
- Publication number 20220025545
- Publication date Jan 27, 2022
- SiCrystal GmbH
- Michael Vogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC CRYSTALS WITH AN OPTIMAL ORIENTATION OF LATTICE PLANES FOR FISS...
- Publication number 20220025546
- Publication date Jan 27, 2022
- SiCrystal GmbH
- Michael Vogel
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20210148006
- Publication date May 20, 2021
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
System For Horizontal Growth Of High-Quality Semiconductor Single C...
- Publication number 20210002787
- Publication date Jan 7, 2021
- SiCrystal GmbH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Application
System For Efficient Manufacturing Of A Plurality Of High-Quality S...
- Publication number 20210002785
- Publication date Jan 7, 2021
- SiCrystal GmbH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...
- Publication number 20200071847
- Publication date Mar 5, 2020
- SiCrystal GmbH
- Michael VOGEL
- C30 - CRYSTAL GROWTH
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20190348272
- Publication date Nov 14, 2019
- SiCrystal GmbH
- Bernhard Ecker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
- Publication number 20190345635
- Publication date Nov 14, 2019
- SiCrystal GmbH
- Michael Vogel
- B24 - GRINDING POLISHING
Information Patent Application
METHOD FOR PRODUCING A VANADIUM-DOPED SILICON CARBIDE VOLUME MONOCR...
- Publication number 20160068994
- Publication date Mar 10, 2016
- SiCRYSTAL AG
- RALF MUELLER
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE...
- Publication number 20140225127
- Publication date Aug 14, 2014
- SICRYSTAL AKTIENGESELLSCHAFT
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
Physical Vapor Transport Growth System For Simultaneously Growing M...
- Publication number 20130305983
- Publication date Nov 21, 2013
- SICRYSTAL AG
- Thomas Ludwig Straubinger
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS...
- Publication number 20130171402
- Publication date Jul 4, 2013
- SiCRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENE...
- Publication number 20130171403
- Publication date Jul 4, 2013
- SiCRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE
- Publication number 20120308759
- Publication date Dec 6, 2012
- SICRYSTAL AG
- Ralph-Uwe Barz
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET...
- Publication number 20110300323
- Publication date Dec 8, 2011
- SICRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THER...
- Publication number 20110086213
- Publication date Apr 14, 2011
- SICRYSTAL AG
- THOMAS STRAUBINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR A LOW-DISLOCATION BULK ALN SINGLE CRYSTAL AND...
- Publication number 20100255305
- Publication date Oct 7, 2010
- SICRYSTAL AG
- Ralph-Uwe Barz
- C30 - CRYSTAL GROWTH

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Trademarklast 30 trademarks

Information Trademark
79317613 - SICRYSTAL
- Serial number 79317613
- Registration number 6799670
- Filing date Feb 2, 2021
- SiCrystal GmbH
- 1 - Chemicals used in industry, science and photography, as well as in agriculture, horticulture and forestry

SiCrystal GmbH

Organization

Patents Grantslast 30 patents

Silicon carbide substrate and method of growing SiC single crystal...

Silicon carbide substrate and method of growing SiC single crystal...

System for efficient manufacturing of a plurality of high-quality s...

Chamfered silicon carbide substrate and method of chamfering

System for horizontal growth of high-quality semiconductor single c...

Production method and growth arrangement for producing a bulk SiC s...

Silicon carbide substrate and method of growing SiC single crystal...

Chamfered silicon carbide substrate and method of chamfering

Method for producing a vanadium-doped silicon carbide volume monocr...

Monocrystalline SiC substrate with a non-homogeneous lattice plane...

Physical vapor transport growth system for simultaneously growing m...

Production method for a bulk SiC single crystal with a large facet...

Production method for an SiC volume monocrystal with a non-homogene...

Production method for an SiC volume monocrystal with a homogeneous...

Production method for a low-dislocation bulk AlN single crystal and...

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE...

Sublimation System And Method Of Growing At Least One Single Crystal

Sublimation System and Method of Growing at Least One Single Crysta...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTA...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCRE...

Crystal Structure Orientation in Semiconductor Semi-Finished Produc...

Monocrystalline SIC Substrates Having an Asymmetrical Geometry and...

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

System For Efficient Manufacturing Of A Plurality Of High-Quality S...

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

SIC CRYSTALLINE SUBSTRATES WITH AN OPTIMAL ORIENTATION OF LATTICE P...

SIC CRYSTALS WITH AN OPTIMAL ORIENTATION OF LATTICE PLANES FOR FISS...

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

System For Horizontal Growth Of High-Quality Semiconductor Single C...

System For Efficient Manufacturing Of A Plurality Of High-Quality S...

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL...

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

METHOD FOR PRODUCING A VANADIUM-DOPED SILICON CARBIDE VOLUME MONOCR...

MONOCRYSTALLINE SIC SUBSTRATE WITH A NON-HOMOGENEOUS LATTICE PLANE...

Physical Vapor Transport Growth System For Simultaneously Growing M...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A HOMOGENEOUS...

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL WITH A NON-HOMOGENE...

LOW-DISLOCATION MONOCRYSTALLINE ALN SUBSTRATE

PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL WITH A LARGE FACET...

METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THER...

PRODUCTION METHOD FOR A LOW-DISLOCATION BULK ALN SINGLE CRYSTAL AND...

Trademarklast 30 trademarks

79317613 - SICRYSTAL