SINOPOWER SEMICONDUCTOR INC.

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Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
Double gate trench power transistor and manufacturing method thereof
- Patent number 10,128,368
- Issue date Nov 13, 2018
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power semiconductor device
- Patent number 9,991,378
- Issue date Jun 5, 2018
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched power semiconductor element
- Patent number 9,799,743
- Issue date Oct 24, 2017
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power transistor
- Patent number 9,722,071
- Issue date Aug 1, 2017
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having low on-state resistance
- Patent number 9,368,621
- Issue date Jun 14, 2016
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with electrostatic discharge structure
- Patent number 9,166,037
- Issue date Oct 20, 2015
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power device and semiconductor structure thereof
- Patent number 8,963,235
- Issue date Feb 24, 2015
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power device and manufacturing method thereof
- Patent number 8,860,134
- Issue date Oct 14, 2014
- Sinopower Semiconductor, Inc.
- Po-Hsien Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method power semiconductor device
- Patent number 8,709,895
- Issue date Apr 29, 2014
- Sinopower Semiconductor Inc.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode semiconductor device with trench gate and manufactur...
- Patent number 8,680,609
- Issue date Mar 25, 2014
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self-aligned contact opening in MOSFET
- Patent number 8,643,094
- Issue date Feb 4, 2014
- Sinopower Semiconductor, Inc.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT
- Patent number 8,564,097
- Issue date Oct 22, 2013
- Sinopower Semiconductor, Inc.
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench type power transistor device
- Patent number 8,536,646
- Issue date Sep 17, 2013
- Sinopower Semiconductor Inc.
- Teng-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with low parasitic transistor and method of making the...
- Patent number 8,441,067
- Issue date May 14, 2013
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device integrated with converter and package structur...
- Patent number 8,426,914
- Issue date Apr 23, 2013
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having shielding electrode for improving...
- Patent number 8,334,566
- Issue date Dec 18, 2012
- Sinopower Semiconductor Inc.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide-semiconductor device
- Patent number 8,319,284
- Issue date Nov 27, 2012
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having extra capacitor structure
- Patent number 8,258,555
- Issue date Sep 4, 2012
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,217,454
- Issue date Jul 10, 2012
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having low gate input resistance
- Patent number 8,178,923
- Issue date May 15, 2012
- Sinopower Semiconductor Inc.
- Wei-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRENCH POWER SEMICONDUCTOR DEVICE
- Publication number 20170365708
- Publication date Dec 21, 2017
- SINOPOWER SEMICONDUCTOR, INC.
- PO-HSIEN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POWER TRANSISTOR
- Publication number 20170213906
- Publication date Jul 27, 2017
- SINOPOWER SEMICONDUCTOR, INC.
- PO-HSIEN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE TRENCH POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20170200822
- Publication date Jul 13, 2017
- SINOPOWER SEMICONDUCTOR, INC.
- PO-HSIEN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING LOW ON-STATE RESISTANCE
- Publication number 20160149034
- Publication date May 26, 2016
- SINOPOWER SEMICONDUCTOR, INC.
- PO-HSIEN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH TYPE POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20130069143
- Publication date Mar 21, 2013
- SINOPOWER SEMICONDUCTOR INC.
- Teng-Hao Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a self-aligned contact opening in MOSFET
- Publication number 20130049104
- Publication date Feb 28, 2013
- SINOPOWER SEMICONDUCTOR, INC
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AR...
- Publication number 20130001699
- Publication date Jan 3, 2013
- SINOPOWER SEMICONDUCTOR, INC.
- Sung-Shan Tai
- H01 - BASIC ELECTRIC ELEMENTS

SINOPOWER SEMICONDUCTOR INC.

Organization

Patents Grantslast 30 patents

Double gate trench power transistor and manufacturing method thereof

Trench power semiconductor device

Trenched power semiconductor element

Trench power transistor

Power semiconductor device having low on-state resistance

Power semiconductor device with electrostatic discharge structure

Trench power device and semiconductor structure thereof

Trench power device and manufacturing method thereof

Manufacturing method power semiconductor device

Depletion mode semiconductor device with trench gate and manufactur...

Method of forming a self-aligned contact opening in MOSFET

Reverse conducting IGBT

Trench type power transistor device

Power device with low parasitic transistor and method of making the...

Semiconductor device integrated with converter and package structur...

Semiconductor power device having shielding electrode for improving...

Laterally diffused metal-oxide-semiconductor device

Semiconductor device having extra capacitor structure

Semiconductor device

Power semiconductor device having low gate input resistance

Patents Applicationslast 30 patents

TRENCH POWER SEMICONDUCTOR DEVICE

TRENCH POWER TRANSISTOR

DOUBLE GATE TRENCH POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE HAVING LOW ON-STATE RESISTANCE

TRENCH TYPE POWER TRANSISTOR DEVICE AND METHOD OF FABRICATING THE SAME

Method of forming a self-aligned contact opening in MOSFET

TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AR...

Trademarklast 30 trademarks